Data Sheet. VMMK GHz Variable Gain Amplifier in SMT Package. Features. Description. Specifications (6 GHz, Vdd = 5 V, Zin = Zout = 50 Ω)

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VMMK-. - 18 GHz Variable Gain Amplifier in SMT Package Data Sheet Description The VMMK- is a small and easy-to-use, broadband, variable gain amplifier operating in various frequency bands from.-18 GHz. It is housed in the Avago Technologies industry-leading and revolutionary sub-miniature chip scale package (GaAsCap wafer scale leadless package) which is small and ultra thin yet can be handled and placed with standard 42 pick and place assembly equipment. The VMMK- provides maximum gain of 12 db with a typical gain range of 2 db where the gain control is accessed from the input port by way of a large value external resistor. It can be operated from V to V power supply. It is fabricated using Avago Technologies unique.2 μm E-mode PHEMT technology which eliminates the need for negative gate biasing voltage. WLP42, 1 mm x. mm x.2 mm LY Features 1 x. mm surface mount package Ultrathin (.2 mm) Broadband frequency range:. to 18 GHz In and output match: ohm All Positive DC Voltage Supply and Control CMOS-compatible gain control voltage Specifications (6 GHz, Vdd = V, Zin = Zout = Ω) Small signal gain: 12 db typ Gain control range: 2 db typ Noise Figure =. db typ Applications 2.4,., and -6 GHz WLAN and WiMax 82.16 & 82.2 BWA systems Radar and ECM systems UWB Generic IF amplifier and VGA Pin Connections (Top View) Input LY Output Input Amp Output Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = V ESD Human Body Model = 4 V Refer to Avago Application Note A4R: Electrostatic Discharge, Damage and Control. Note: L = Device Code Y = Month Code

Electrical Specifications Table 1. Absolute Maximum Rating [1] Symbol Parameters/Condition Unit Absolute Max Vdd Supply Voltage (RF Output) [2] V 6 Vc Gain Control Voltage V 2 Id Supply Current [2] ma P in, max CW RF Input Power (RF Input) [] dbm +1 P diss Total Power Dissipation mw 42 Tch Max Channel Temperature C + θjc Thermal Resistance [4] C/W Notes 1. Operation of this device above any one of these parameters may cause permanent damage 2. Bias is assumed DC quiescent conditions. With the DC (typical bias) and RF applied to the device at board temperature Tb = 2 C 4. Thermal resistance is measured from junction to board using IR method Table 2. DC and RF Specifications [1] T A = 2 C, Frequency = 6 GHz, Vdd = V, Z in = Z out = Ω (unless otherwise specified) Symbol Parameters/Condition Unit Minimum Typical Maximum Id_Max_Gain Supply Current at Vc = 1.8 V ma 8 66 Id_Min_Gain Supply Current at Vc =.6 V ma 1 24 1 Max_Gain Gain at Vc = 1.8 V db. 12 Min_Gain Gain at Vc =.6 db - - Gain Control Range Max_Gain Min_Gain db 1. 2 NF Noise Figure at Vc = 1.8 V db. 4.2 Table. Typical Performance [2] T A = 2 C, Frequency = 6 GHz, Vdd = V, Z in = Z out = Ω (unless otherwise specified) Vc V Id ma Gain db NF db IIP [] db OP1dB dbm 1.8 8 12. 8 12-12 -1. 42-2.8.6 24-1 -. -8-18 OPsat dbm Notes 1. Measured Data obtained from G-S probing on wafer. Losses of test fixture have been de-embedded. 2. Measured Data obtained from G-S-G probing on substrate. Losses of test fixture have been de-embedded.. IIP test condition: 2-tone freq. separation = MHz, Pin = -2 dbm IRL db ORL db 2

Product Consistency Distribution Charts at 6. GHz, Vdd = V, Vc = 1.8 V unless specified otherwise LSL USL LSL USL.46..4.8.62.66. ID_MAX_1.8 @ Vdd = V, Vc = 1.8 V, Mean = 8 ma, LSL = ma, USL = 66 ma.14.18.22.26.. ID_MIN_.6 @ Vdd = V, Vc =.6 V, Mean = 24 ma, LSL = 1 ma, USL = 1 ma USL LSL 2 4 12 1 NF @ 6GHz, Mean =. db, USL = 4.2 db GAIN_MAX_1.8 @ 6 GHz, Mean = 12 db, LSL =. db USL Notes: Distribution data based on 4 Kpcs part sample size from MPV lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. -1-1 -1 - - -8 - -6 GAIN_MIN_.6 @ 6 GHz, Mean = - db, USL = - db -

VMMK- Typical Performance Data obtained using GSG probing on substrate, broadband bias-t s, losses calibrated out to the package reference plane. (T A = 2 C, Vdd = V, Z in = Z out = Ω unless noted) S21 (db) 2 - -2 - -4 4 8 12 16 2 1.8 V 1.2 V 1.1 V 1. V. V.8 V. V.6 V. V.4 V. V V S12 (db) - -4 - -6-4 8 12 16 2 1.8 V 1.2 V 1.1 V 1. V. V.8 V. V.6 V. V.4 V. V V Figure 1. Gain Range vs. Vcontrol Figure 2. Reverse Isolation vs. Vc S (db) - - -1-2 4 8 12 16 2 1.8 V 1.2 V 1.1 V 1. V. V.8 V. V.6 V. V.4 V. V V Figure. Input Return Loss vs. Vc Figure 4. Output Return Loss vs. Vc S22 (db) - - -1-2 -2 4 8 12 16 2 1.8 V 1.2 V 1.1 V 1. V. V.8 V. V.6 V. V.4 V. V V Response (db) 2 1 - - -1-2 S S22 S21 21 24 Figure. Broadband Gain and Return Losses (Vc = 1.8 V) Figure 6. Noise Figure (Vc = 1.8 V) NF (db) 4. 4... 2. NF_ ohm NFmin 4

VMMK- Typical Performance (T A = 2 C, Vdd = V, Z in = Z out = Ω unless noted) IIP (dbm) 1 Vc = 1.8 V Vc =.6 V IIP (dbm) 2 1 1 GHz 6 GHz 12 GHz 18 GHz - Figure. Input IP vs. Freq -..6. 1.2 1. 1.8 Vc (V) Figure 8. Input IP vs. Vc Psat (dbm) 14 12 8 6 4 2-2 1.8 V. V.6 V Figure. Saturated Power Gain (db) 1 - - -1 1.8 V. V.6 V -2-1 - - Pin (dbm) Figure. Gain vs. Pin at 6 GHz NF (db) 2 2 1 Vc =.6 V Vc = 1.8 V Idd (ma) 6 4 2 Vdd = V Vdd = 4 V Vdd = V Figure. Noise Figure at Min and Max Gain..6. 1.2 1. 1.8 Vc (V) Figure 12. Supply Current over Bias

VMMK- Typical Performance (T A = 2 C, Vc = 1.8 V, Z in = Z out = Ω unless noted) 1 1 V 4 V V 6 V 4 V V S21 (db) 1 NF (db) 4 4 8 12 16 2 Figure 1. Max. Gain over Vdd 2 Figure 14. Noise Figure over Vdd 1 1 V 4 V V IIP (dbm) P1dB (dbm) Figure 1. Input IP over Vdd Vdd = V Vdd = 4 V Vdd = V Figure 16. Output P1dB over Vdd 6

VMMK- Typical Performance (T A = 2 C, Vdd = V, Vc = 1.8 V, Z in = Z out = Ω unless noted) S21 (db) 1 1 1-4 C +2 C +8 C S21 (db) -4-8 -12 Figure 1. Max Gain (Vc = 1.8 V) over Temp -16-2 Figure 18. Min. Gain (Vc =.6 V) over Temp -4 C +2 C +8 C 6 2 22 - C +2 C +8 C NF (db) 4 NF (db) 1 2 1 Figure 1. Noise Figure (Vc = 1.8 V) over Temp - C +2 C +8 C 16 1 Figure 2. Noise Figure (Vc =.6 V) over Temp 1 1-4 C +2 C +8 C IIP (dbm) P1dB (dbm) Figure 21. Input IP over Temp -4 C +2 C +8 C Figure 22. Output P1dB over Temp

Typical Scattering Parameters (Data obtained using GSG probing on substrate, broadband bias-t s, losses calibrated out to the package reference plane.) Maximum Gain State T A = 2 C, V dd = V, Vc = 1.8 V, Z in = Z out = Ω Freq GHz S S21 S12 S22 db mag phase db mag phase db mag phase db mag phase.1 -.24.4-6.4 1.88.12-16.66-4.4.18.4 -..4-2.14. -8.2.8-44.1 1.. 168.68 -.14.14 -. -14.4.1 -.. -.6. -.86 14.8.1 16.24 -.6. -46.64-1..12 -. 1 -.64.261-68.2 14.8.4 14.66-4.14. -61.6-18.26. -.18 1. -12.68.2-82.8 1.8 4.8 14.61-2.6.2-6.46-18..6 -.816 2-12.16.21-6. 1.68 4.1 1. -8.416.1-2. -18.644. -44.66 2. -12.4.22 -.88 1.44 4.66 126.2 -.21.1 22.81-1.464.14-2.61-12.24.21 -.8 1.2 4. 6.62-1.1..42-1..141-6.88. -12.44.2-12.488 1. 4.8.2-4...24-16..14-6.22 4-12.86.24-14.2 12.88 4.4.488-4..4 8.62-1..1 -.68 4. -.81.28 -.4 12.6 4. 88. -46.16..41-1.4.168-8.6 -.624.262-16.6 12.464 4.1 8.8-4.1.6 4.82-14.8.18-8.1. -.41.26-16.866 12.26 4.2 6.64-44.12.6 4.6-14.61.11-6.82 6 -..21-1. 12.4 4.6 6.1-42.4..88-1.62.2-2.828 -.46.26 162.1.6.82 42.62-42.4.8 4. -1.16.22 -. 8 -.1.2 14..6.1 24.88-4.24. 48. -12.2.24-124.42-12.42.28 1.44.6..241-4.26..88 -.42.26-14.1-1.6.28 121.2.846.486 -.1-4.446. 6.64 -..282-14.6-14.866.181 4.42..42-28.8 -.4.. -.42.2 -.61 12-16.6.146 6.812.6.4-4.6 -.21. 2.424 -.2.28-18.1 1-1.6.14.686.4.2-66.8 -.4. 6.426 -..2-16.4 14-1.41.1.664.44.2-8. -42.8..82 -.2.24-166.82 1-16.8.14 84.18.1.24 -.4-4.68. -. -.4.266-16. 16-16.46. 6.22.4.1-11.4-4.8. -4.888 -.866.2-166.8 1-1.4.16.82.. -14.8 -.18.2-2.2 -.681.261-16.2 18-1.614.166 12.88.1 2.88-1.66-1.1. 18.2 -..4-18.1 1-1.2.2-21.8 8.448 2.64 1.1-44.88.6 12.2-8.66.6-1.24 2-12.1.24-41.42.61 2.88 1.864-41.. 14.41-8.14.2-162. 21 -.66.2-6.8 6.68 2.1 1.26 -..14 18.8 -.1.4-16.48 22-8.84.6-8.68. 1. 8.8-6.6.1 16.26-6.84.4-1.64 2 -.81.4 -.2 4.8 1. 68.28 -.21.22 12.8 -..441 1.6 24-6.6.4-2.66 4.8 1.6 46.8-1.2.2 12.1 -..42 164.8 2 -..26-12.2.42 1.48 24.8 -..1. -8.68.68 1.4 26 -..6-18.1 2.8 1. 1.8-28.. 6. -..22 142.46 2-4.2.6-12.26 2.12 1.28-22.4-2.8.41 1.488-1..12 14.1 28 -.4.6-16.4 1.4 1.188-4.141-26.4.4 2.14-2.41.2 144.28 2 -.41.66 16.86.621 1.4 -.446-2.82.1 86.4-16.81.144 -.46 -.1.68 18.42 -.4. -6.6-2.2..4 -..1 -. 8

Typical Scattering Parameters (Data obtained using GSG probing on substrate, broadband bias-t s, losses calibrated out to the package reference plane.) Maximum Gain State T A = 2 C, V dd = V, Vc =.6 V, Z in = Z out = Ω Freq GHz S S21 S12 S22 db mag phase db mag phase db mag phase db mag phase.1-4.84.64-2.86-12.146.24 12. -4.6.1-1.8-8.62. -2.821. -6.6.46-4.824-14.24.1 14. -.21.1-2.2-1..1-1.6. -8.22. -6.6-14.8.182 14.66-4.446. -44.24-18.24.122 -.1 1 -.81.22 -.444-1.244.1 18. -4..4-46.248-24.8. -6.41 1. -.21.6-6.6-1.24.1 124. -.12.2 4.86-2.11.44-4.2 2 -.6.18-2.22-1..16 1.86-4..4 4.16-2..42-12.614 2. -.8.24-12.81-14.8.18.12-46.4. 8.6-26.21.48 -.44 -.2.44-16.8-14.666.18 8.68-44.1.6 46. -2.68.4-6.22. -8.88.62-14.8-14.44.1.64-4.22..6-24.6.61 -.24 4-8.42. -16.46-14.186.1 8. -41.618.8 8.4-22.88.2 -.122 4. -8.2. -11.6-1.66.2 46.66-4.81..2-21.66.82 -. -.8. 18. -1.2.26.2-4.446. 1.84-2.41. -1.216. -.862.4 168.168-1.48.2 24.64-4...148-1..8 -.44 6 -.86.4 1.4-1.21.218 14. -.412. 2.4-18.46. -.26-8.2.82 18.626-12.6.2-6.12 -.2. 22.64-16.624.148-12.666 8 -.484.6 121.4-12.14.246-2.24-8.44.12 2.228-1.6.18-11.66 -.24.2 8.2 -.4.26-4.6 -.48.1.61-1.6.28-1.41-14.14.18.44 -.4.22-6. -.2.14 -. -12.64.24-146.6-14.46.18 1.1 -..1-8.81 -.16.14-6.66 -.842.26-1. 12 -.4.26 1.4 -.4.4-1.4-6.4.14-2.41 -.418.26-16.1 1-8..6.41-8.4.6-1.2 -.2.1-2. -.4.26-16.86 14 -.2.44 2.61-8.2.8-1.21 -.14. -.826 -.64.28-1.8 1-6.41.48.6 -..4 16. -4.. -1.18 -.41.2-14.141 16-6.28. 4. -.64.414.14-4.. -14.1-12.26.24-12.86 1 -.64.22 21. -.48.422 12. -.14. -16.1-12.8.24-16.4 18 -.2.28-1. -..418. -.2.1 16.81 -.2.22-164.22 1 -.4.62-26.8-8.1.8 2.6-6.18.16 1.88 -.84.1-161.6 2-4.614.88-4.2-8..6 4.14 -.41.18.8 -.14.4-16.18 21-4.22.61-6.16 -.61.2 22.4-2.21.2 1.4-8..4-1.28 22 -.6.6-86. -.62.2-1.6-1.4.2 1.8-8.161.1 1.1 2 -.41.62 -.8 -.48.2-2.48-2.422.4 121. -8.81.6 164.8 24 -.4.4-121.2-1.1.21-1.26-28.68. 1.2 -.22.8 1.184 2-2..2-1.2-14.12.188-6. -2.2.41 1.8-1.846.2 148.226 26-2.8.26-148.62-1.18.16 -. -2..4.8-2.41. 14.82 2-2.648. -16. -1.12.1-16.14-26.88.4 8.2-2.66.2-122.188 28-2.61.28-18.128-18.66.121-16.4-26.61.4. -1.6.2-8.8 2-2.84.18 16.1-1.62.1 16.8-2.4.1.41 -..2 -.1 -.14.66 148.14-1.61. 11.24-2.64..4 -.44.426-122.66

VMMK- Applications and Usage Information Table 4. VMMK- Demo Board BOM Component Value DUT VMMK- C1 pf C2 pf R1 KOhms C.1 mf C6 pf L1 2 nh Figure 2. Evaluation/Test Board (available to qualified customers upon request) Biasing and Operation The VMMK- is biased with a positive supply connected to the output pin Vd through an external user supplied bias decoupling network. Nominal current draw is ma from a V power supply. A typical biasing scheme is shown in Figure 2. Maximum gain occurs when Vc is 1.8 V and minimum gain occurs with Vc set to.6 V. Vc Vdd.1 µf.1 µf K Input pf Ohm line Input Pad Amp Ground Pad Output Pad pf Ohm line L1 pf Output Figure 24. Example demonstration circuit of VMMK- for broadband operation (RF choke value selected for best performance at 12 GHz). A layout of a typical demo board is shown in Figure 2. The demo board uses small 42 style surface mount components. Due to the broad bandwidth of the VMMK- devising a bias decoupling network to work well over the entire. to 18 GHz frequency range will be a challenge. Conical wound broad band inductors will work well but may be pricy. The demo board uses a 2.2 nh output inductor which provides good bandwidth from about a 1 GHz to beyond 6 GHz. The input and output blocking capacitors are pf. Typically a passive component company like Murata does not specify S parameters at frequencies higher than or 6 GHz for larger values of inductance making it difficult to properly simulate amplifier performance at higher frequencies. It has been observed that the Murata LQW1AN series of 42 inductors actually works quite well above their normally specified frequency. Another scheme for increasing the bandwidth would be to install two small chip inductors in series. A smaller value would favor the higher frequencies while the larger value will work better at low frequencies. Putting a few ohms of resistance in series with the inductors will also tend to smooth out the response by minimizing resonances in the bias decoupling networks. The parallel combination of the pf and.1 mf capacitors provide a low impedance in the band of operation and at lower frequencies and should be placed as close as possible to the inductor. The low frequency bypass provides good rejection of power supply noise and also provides a low impedance termination for third order low frequency mixing products that will be generated when multiple in-band signals are injected into any amplifier. The K ohm resistor at the input provides a reasonably wide bandwidth way of injecting Vc at the input to the device without adversely affecting RF performance. Figure 2. Biasing the VMMK-

S Parameter Measurements The S parameters are measured on a mm G-S-G (ground signal ground) printed circuit board substrate. Calibration is achieved with a series of through, short and open substrates from which an accurate set of S parameters is created. The test board is.16 inch thickness RO4. Grounding of the device is achieved with a single plated through hole directly under the device. The effect of this plated through hole is included in the S parameter measurements and is difficult to de-embed accurately. Since the maximum recommended printed circuit board thickness is nominally.2 inch, then the nominal effect of printed circuit board grounding can be considered to have already been included the published S parameters. Package and Assembly Note For detailed description of the device package, handling and assembly, please refer to Application Note 8. ESD Precautions Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when die are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. For more detail, refer to Avago Application Note A4R: Electrostatic Discharge Damage and Control. Ordering Information Part Number Devices Per Container Container VMMK--BLKG Antistatic Bag VMMK--TR1G Reel Package Dimension Outline D E A Dimensions Symbol Min (mm) Max (mm) E..8 D 1.4 1.8 A.22.2 Note: All dimensions are in mm Reel Orientation REEL Device Orientation USER FEED DIRECTION 4 mm LY LY LY LY 8 mm USER FEED DIRECTION CARRIER TAPE TOP VIEW Notes: L = Device Code Y = Month Code END VIEW

Tape Dimensions Note: 2 P2 Do Note: 1 Po B B E T (Max) A A P1 D1 F Note: 2 W Bo Scale :1 B B SECTION Ao R.1 (Max) Ko Scale :1 A A SECTION Ao =.±. mm Bo = 1.26±. mm Ko =. +. mm + Unit: mm Symbol Spec. K1 Po 4.±. P1 4.±. P2 2.±. Do 1.±. D1.±. E 1.±. F.±. Po 4.±. W 8.±.2 T.2±.2 Notice: 1. Sprocket hole pitch cumulative tolerance is ±.1 mm. 2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole.. Ao & Bo measured on a place. mm above the bottom of the pocket to top surface of the carrier. 4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier.. Carrier camber shall be not than 1 m per mm through a length of 2 mm. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2-212 Avago Technologies. All rights reserved. AV2-218EN - December 26, 212

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