PS2805C-1, PS2805C-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER DESCRIPTION FEATURES APPLICATIONS. PIN CONNECTION (Top View)

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Transcription:

, HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER Data Sheet R08DS0074EJ0300 Rev.3.00 DESCRIPTION The and are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance. This package has shield effect to cut off ambient light. FEATURES High isolation voltage (BV = 2 500 Vr.m.s.) Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm) High collector to emitter voltage (V CEO : 80 V) AC input response Ordering number of tape product: -F3, -F3 Pb-Free product Safety standards UL approved: No. E72422 CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) BSI approved (BS EN 60065, BS EN 60950) ( only) DIN EN 60747-5-5 (VDE 0884-5) approved (Option) PIN CONNECTION (Top View) 4 3 1 2 1. Anode, Cathode 2. Cathode, Anode 3. Emitter 4. Collector 1615 1413 1211 10 9 APPLICATIONS Programmable logic controllers OA equipment Measuring instruments Hybrid IC 1 2 3 4 5 6 7 8 1. 3. 5. 7. Anode, Cathode 2. 4. 6. 8. Cathode, Anode 9. 11. 13. 15. Emitter 10. 12. 14. 16. Collector The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R08DS0074EJ0300 Rev.3.00 Page 1 of 12

PACKAGE DIMENSIONS (UNIT: mm) 2.7±0.3 4 3 10.3±0.3 16 9 1 2 1 8 2.0±0.1 1.27 0.4±0.1 0.12 M 0.1±0.1 0.15 +0.10 0.05 0.5±0.3 7.0±0.3 4.4 2.0 +0.3 0.2 0.1±0.1 0.40 +0.10 0.05 0.12 M 1.27 0.15 +0.10 0.05 0.5±0.3 7.0±0.3 4.4 PHOTOCOUPLER CONSTRUCTION Parameter Air Distance Outer Creepage Distance Inner Creepage Distance Isolation Distance Unit (MIN.) 4.5 mm 4.5 mm 2.5 mm 0.1 mm R08DS0074EJ0300 Rev.3.00 Page 2 of 12

MARKING EXAMPLE Made in Taiwan Company initial R5C Last 2 numbers of type No. : 5C Assembly Lot Week Assembled Year Assembled (Last 1 digit) Made in Japan R5C " " (Square) :Made in Japan No. 1 pin Mark R NL Country Assembled Assembly Lot N L 3 01 Week Assembled Year Assembled (Last 1 Digit) In-house Code (L: Pb-Free) Rank Code R08DS0074EJ0300 Rev.3.00 Page 3 of 12

ORDERING INFORMATION Part Number Order Number Solder Plating Specification Packing Style Safety Standards Approval Application Part Number *1 -F3 -F3-A Pb-Free Embossed Tape 3 500 pcs/reel -F3 -F3-A Embossed Tape 2 500 pcs/reel -V-F3 -V-F3-A Embossed Tape 3 500 pcs/reel -V-F3 -V-F3-A Embossed Tape 2 500 pcs/reel Standard products (UL, CSA, BSI approved) DIN EN 60747-5-5 (VDE0884-5) Approved (Option) Note: *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current (DC) I F ±30 ma/ch Power Dissipation Derating ΔP D / C 0.6 0.8 mw/ C Power Dissipation P D 60 80 mw/ch Peak Forward Current *1 I FP ±0.5 A/ch Transistor Collector to Emitter Voltage V CEO 80 V Emitter to Collector Voltage V ECO 5 V Collector Current I C 30 ma/ch Power Dissipation Derating ΔP C / C 1.2 mw/ C Power Dissipation P C 120 mw/ch Isolation Voltage *2 BV 2 500 Vr.m.s. Operating Ambient Temperature T A 55 to +100 C Storage Temperature T stg 55 to +150 C Notes: *1. PW = 100 μs, Duty Cycle = 1% *2. AC voltage for 1 minute at T A = 25 C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together (). Pins 1-8 shorted together, 9-16 shorted together (). R08DS0074EJ0300 Rev.3.00 Page 4 of 12

ELECTRICAL CHARACTERISTICS (T A = 25 C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage V F I F = ±5 ma 1.2 1.4 V Transistor Coupled Terminal Capacitance C t V = 0 V, f = 1.0 MHz 20 pf Collector to Emitter Dark Current I CEO V CE = 80 V, I F = 0 ma 100 na Current Transfer Ratio (I C /I F ) *1 CTR I F = ±5 ma, V CE = 5 V 50 400 % Collector Saturation Voltage V CE (sat) I F = ±10 ma, I C = 2 ma 0.13 0.3 V Isolation Resistance R I-O V I-O = 1.0 kv DC 10 11 Ω Isolation Capacitance C I-O V = 0 V, f = 1.0 MHz 0.4 pf Rise Time *2 t r V CC = 5 V, I C = 2 ma, R L = 100 Ω 5 μs Fall Time *2 t f 7 Turn-on Time *2 t on 10 Turn-off Time *2 t off 7 Notes: *1. CTR rank N : 50 to 400 (%) M : 100 to 400 (%) N : 50 to 400 (%) M : 100 to 400 (%) *2. Test circuit for switching time Pulse Input VCC PW = 100 μs Duty Cycle = 1/10 Input ton toff IF VOUT td ts 50 Ω RL = 100 Ω 90% Output 10% tr tf R08DS0074EJ0300 Rev.3.00 Page 5 of 12

TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise specified) Diode Power Dissipation PD (mw) 100 80 60 40 20 DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.6 mw/ C 0.8 mw/ C 0 0 25 50 75 100 125 Ambient Temperature TA ( C) Transistor Power Dissipation PC (mw) 200 160 120 80 40 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 mw/ C 0 0 25 50 75 100 125 Ambient Temperature TA ( C) Forward Current IF (ma) 100 50 10 5 1 0.5 0.1 0.05 0.7 0.8 FORWARD CURRENT vs. FORWARD VOLTAGE TA = +100 C +60 C +25 C 0.9 1.0 1.1 1.2 1.3 0 C 25 C 55 C 1.4 1.5 Collector Current IC (ma) 30 CTR = 250% 25 20 15 10 5 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IF = 10 ma 5 ma 2 ma 1 ma 0 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) Collector to Emitter Dark Current ICEO (na) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 10 000 1 000 100 10 70 V 24 V VCE = 80 V CTR = 200% CTR = 250% 1 0.1 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0 Collector Current IC (ma) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 IF = 10 ma 5 ma 1 2 ma 1 ma Ambient Temperature TA ( C) Collector Saturation Voltage VCE(sat) (V) Remark The graphs indicate nominal characteristics. R08DS0074EJ0300 Rev.3.00 Page 6 of 12

Normalized Current Transfer Ratio CTR 1.4 CTR = 250% 1.2 1.0 0.8 0.6 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 80% 0.4 Normalized to 1.0 0.2 at TA = 25 C, IF = 5 ma, VCE = 5 V 0 75 50 25 0 25 50 75 100 Ambient Temperature TA ( C) Current Transfer Ratio CTR (%) 400 300 200 100 CURRENT TRANSFER RATIO vs. FORWARD CURRENT VCE = 5 V, n = 3 Sample A B C 0 0.01 0.1 1 10 100 Forward Current IF (ma) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 IC = 2 ma, VCC = 5 V, CTR = 228% 1 000 IF = 5 ma, VCC = 5 V, CTR = 228% Switching Time t ( μ s) 10 1 tf tr td ts Switching Time t ( μ s) 100 10 tf ts tr td 0.1 10 100 1 000 10 000 Load Resistance RL (Ω) 1 1 10 100 Load Resistance RL (kω) 5 FREQUENCY RESPONSE 0 Normalized Gain Gv 5 10 15 RL = 1 kω 100 Ω 20 300 Ω IF = 5 ma, VCE = 5 V 25 0.1 1 10 100 1 000 Frequency f (khz) Remark The graphs indicate nominal characteristics. R08DS0074EJ0300 Rev.3.00 Page 7 of 12

TAPING SPECIFICATIONS (UNIT: mm) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 φ1.5 +0.1 0 1.75±0.1 7.5±0.1 16.0±0.3 7.55±0.1 2.8 MAX. 1.55±0.1 4.0±0.1 0.3 2.85±0.1 2.3±0.1 Tape Direction -F3 R5C R5C R5C R5C R5C Outline and Dimensions (Reel) 2.0±0.5 R 1.0 2.0±0.5 φ13.0±0.2 φ21.0±0.8 φ330±2.0 φ100±1.0 17.5±1.0 21.5±1.0 Packing: 3 500 pcs/reel 15.9 to 19.4 Outer edge of flange R08DS0074EJ0300 Rev.3.00 Page 8 of 12

Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 φ1.5 +0.1 0 1.75±0.1 2.8 MAX. 7.5±0.1 16.0±0.3 10.7±0.1 1.55±0.1 12.0±0.1 8.3±0.1 0.3 2.3±0.1 Tape Direction -F3 Outline and Dimensions (Reel) 2.0±0.5 R 1.0 2.0±0.5 φ13.0±0.2 φ21.0±0.8 φ330±2.0 φ100±1.0 17.5±1.0 21.5±1.0 Packing: 2 500 pcs/reel 15.9 to 19.4 Outer edge of flange R08DS0074EJ0300 Rev.3.00 Page 9 of 12

NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering Peak reflow temperature 260 C or below (package surface temperature) Time of peak reflow temperature 10 seconds or less Time of temperature higher than 220 C 60 seconds or less Time to preheat temperature from 120 to 180 C 120±30 s Number of reflows Three Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T ( C) 120 C 120±30 s (preheating) 180 C (heating) to 10 s to 60 s 260 C MAX. 220 C Time (s) (2) Wave soldering Temperature 260 C or below (molten solder temperature) Time 10 seconds or less Preheating conditions 120 C or below (package surface temperature) Number of times One (Allowed to be dipped in solder including plastic mold portion.) Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron Peak Temperature (lead part temperature) 350 C or below Time (each pins) 3 seconds or less Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead R08DS0074EJ0300 Rev.3.00 Page 10 of 12

(4) Cautions Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler s input and output or between collectoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below I F = 1 ma. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. R08DS0074EJ0300 Rev.3.00 Page 11 of 12

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Spec. Unit Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 UIORM, Pd < 5 pc UIORM Upr 705 1 128 Vpeak Vpeak Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 UIORM, Pd < 5 pc Upr 1 322 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2 Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range Tstg 55 to +150 C Operating temperature range TA 55 to +100 C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 C VIO = 500 V dc at TA MAX. at least 100 C Ris MIN. Ris MIN. 10 12 10 11 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi Tsi Isi Psi Ris MIN. 150 300 500 10 9 C ma mw Ω R08DS0074EJ0300 Rev.3.00 Page 12 of 12

Revision History, Data Sheet Description Rev. Date Page Summary 1.00 May 30, 2006 This data sheet was released as PN10611EJ01V0DS 3.00 Throughout Renesas format is applied to this data sheet. p.1 The ordering number and safety standards are revised. p.2 PHOTOCOUPLER CONSTRUCTION is added as each distance of this device. p.3 The explanation in MARKING EXAMPLE is revised. p.4 ORDERING INFORMATION is modified with the revision of the safety standards. p.5 Turn-on Time (t on ) and Turn-off Time (t off ) are added to the table in ELECTRICAL CHARACTERISTICS. p.6 The graph of DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE and TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE are revised p.7 The graph of LONG TERM CTR DEGRADATION is deleted. p.8 -F4 is deleted form Tape Direction image in TAPING SPECIFICATIONS. p.9 -F4 is deleted form Tape Direction image in TAPING SPECIFICATIONS. p.10 The note about temperature condition of the recommended soldering conditions is deleted. p.12 The values in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT are changed as follows. -- Test voltage is changed from the factor, 1.5, and the value, 1058, to 1.6 and 1128, respectively. -- Clearance distance is moved to PHOTOCOUPLER CONSTRUCTION with changing 5.0 (min.) to 4.5 (min.). All trademarks and registered trademarks are the property of their respective owners. C - 1

NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: Standard and High Quality. The recommended applications for each Renesas Electronics product depends on the product s quality grade, as indicated below. Standard : Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. High Quality : Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by California Eastern Laboratories or Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories. 12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. NOTE 1: Renesas Electronics as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. NOTE 2: Renesas Electronics product(s) means any product developed or manufactured by or for Renesas Electronics. NOTE 3: Products and product information are subject to change without notice. CEL Headquarters 4590 Patrick Henry Drive, Santa Clara, CA 95054 Phone (408) 919-2500 www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus