PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58 K Rads (Si).3Ω.6A IRHG57 V, Quad N-CHANNEL 5 TECHNOLOGY MO-36AB International Rectifier s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8 (MeV/(mg/cm 2 )). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight n ESD Rating: Class A per MIL-STD-75, Method 2 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 2V, TC = 25 C Continuous Drain Current.6 ID @ VGS = 2V, TC = C Continuous Drain Current. IDM Pulsed Drain Current 6.4 Units PD @ TC = 25 C Max. Power Dissipation.4 W Linear Derating Factor. W/ C VGS Gate-to-Source Voltage ± 2 V EAS Single Pulse Avalanche Energy 3 mj IAR Avalanche Current.6 A EAR Repetitive Avalanche Energy.4 mj dv/dt Peak Diode Recovery dv/dt ƒ 6.5 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Lead Temperature 3 (.63 in./.6 mm from case for s) C Weight.3 (Typical) g A For footnotes refer to the last page www.irf.com 7/7/5
IRHG57 Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) (Per Die) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage V VGS = V, ID =.ma BVDSS/ TJ Temperature Coefficient of Breakdown.4 V/ C Reference to 25 C, ID =.ma Voltage RDS(on) Static Drain-to-Source On-State.29 Resistance Ω VGS = 2V, ID =.A VGS(th) Gate Threshold Voltage 2. 4. V VDS = VGS, ID =.ma gfs Forward Transconductance. S VDS = 5V, IDS =.A IDSS Zero Gate Voltage Drain Current VDS = 8V, VGS= V 25 µa VDS = 8V, VGS = V, TJ =25 C IGSS Gate-to-Source Leakage Forward VGS = 2V IGSS Gate-to-Source Leakage Reverse - na VGS = -2V Qg Total Gate Charge 7 VGS =2V, ID =.6A, Qgs Gate-to-Source Charge 4.4 nc VDS = 5V Qgd Gate-to-Drain ( Miller ) Charge 3.9 td(on) Turn-On Delay Time 2 VDD = 5V, ID =.6A, tr Rise Time 6 VGS =2V, RG = 7.5Ω td(off) Turn-Off Delay Time 3 ns tf Fall Time 5 LS + LD Total Inductance Measured from Drain lead (6mm /.25in. nh from package) to Source lead (6mm /.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance 37 VGS = V, VDS = 25V Coss Output Capacitance pf f =.MHz Crss Reverse Transfer Capacitance 3.4 Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode).6 ISM Pulse Source Current (Body Diode) 6.4 A VSD Diode Forward Voltage.2 V Tj = 25 C, IS =.6A, VGS = V trr Reverse Recovery Time ns Tj = 25 C, IF =.6A, di/dt A/µs QRR Reverse Recovery Charge 38 nc VDD 25V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJA Junction-to-Ambient 9 Typical socket mount C/W Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com
IRHG57 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation (Per Die) Parameter Up to 5K Rads(Si) K Rads (Si) 2 Units Test Conditions Min Max Min Max BV DSS Drain-to-Source Breakdown Voltage V V GS = V, I D =.ma VGS(th) Gate Threshold Voltage 2. 4. 2. 4.5 VGS = V DS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - - V GS = -2 V I DSS Zero Gate Voltage Drain Current 25 µa V DS = 8V, V GS =V R DS(on) Static Drain-to-Source.226.246 Ω VGS = 2V, I D =.A On-State Resistance (TO-3) R DS(on) Static Drain-to-Source.29.3 Ω VGS = 2V, I D =.A On-State Resistance (MO-36AB) V SD Diode Forward Voltage.2.2 V V GS = V, IS =.6A. Part numbers IRHG57, IRHG53, IRHG54 2. Part number IRHG58 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area (Per Die) LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = V -5V -V -5V -2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% 6 ± 5% 33 ± 7.5% 3 ± % 35 25 84 ± 5% 35 ± % 28 ± 7.5% 8 25 - Bias VDS (V) 2 8 6 4 2-5 - Bias VGS (V) -5-2 LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area www.irf.com 3
IRHG57 I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 9.V 8.V 7.V 6.V BOTTOM 5.V 5.V 2µs PULSE WIDTH T J = 25 C.. V DS, Drain-to-Source Voltage (V) I I D,, Drain-to-Source Current Current (A) (A) D VGS TOP 5V VGS TOP 2V 5V V 2V 9.V V 8.V 9.V 7.V 8.V 6.V 7.V BOTTOM 5.V 6.V BOTTOM 5.V 5.V 5.V 2µs PULSE WIDTH 2µs PULSE T J = 5 WIDTH. T J = 5 C... V DS,, Drain-to-Source Drain-to-Source Voltage Voltage (V) DS (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J = 5 C T J = 25 C V DS = 5V 2µs PULSE WIDTH. 5. 5.5 6. 6.5 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D =.6A 2..5..5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
I D, Drain-to-Source Current (A) IRHG57 C, Capacitance (pf) 8 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 6 C iss 4 C oss 2 C rss V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) 2 6 2 8 4 I = D.6A V DS = 8V V DS = 5V V DS = 2V FOR TEST CIRCUIT SEE FIGURE 3 4 8 2 6 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V..4.6.8..2.4 V SD,Source-to-Drain Voltage (V). OPERATION IN THIS AREA LIMITED Tc = 25 C Tj = 5 C Single Pulse BY R DS (on) ms ms V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5
IRHG57.6 V DS R D I D, Drain Current (A).3..6.3 Fig a. Switching Time Test Circuit V DS 9% R G V GS V GS Pulse Width µs Duty Factor. % D.U.T. + - V DD. 25 5 75 25 5 T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms D =.5 Thermal Response (Z thja ).2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA..... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com
IRHG57 V DS R G 2V V GS I AS tp.ω 5V L DRIVER Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS tp. D.U.T + - V DD A E AS, Single Pulse Avalanche Energy (mj) 3 25 2 5 5 I D TOP.7A.A BOTTOM.6A 25 5 75 25 5 Starting T, Junction Temperature( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 5KΩ Q G 2V.2µF.3µF 2 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit www.irf.com 7
IRHG57 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25 C, L= mh, Peak IL =.6A, VGS =2V ƒ ISD.6A, di/dt 34A/µs, VDD V, TJ 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A Total Dose Irradiation with VDS Bias. 8 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A Case Outline and Dimensions MO-36AB IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 7/25 8 www.irf.com