MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A ABSOLUTE MAXIMUM RATINGS SOT-23 INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CBO Collector-Emitter oltage (IE = 0) 75 CEO Collector-Emitter oltage (I B = 0) 40 EBO Emitter-Base oltage (IC = 0) 6 I C Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A P tot Total Dissipation at T amb = 25 o C 3 mw Tstg Storage Temperature -65 to 1 T j Max. Operating Junction Temperature 1 o C o C February 2003 1/5
THERMAL DATA R thj-amb Thermal Resistance Junction-Ambient Max 357.1 Device mounted on a PCB area of 1 cm 2. o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEX Collector Cut-off CE = 60 10 na Current ( BE = -3 ) IBEX Base Cut-off Current CE = 60 20 na ( BE = -3 ) ICBO Collector Cut-off CB = 75 10 na Current (I E = 0) CB = 75 T j = 1 o C 10 µa I EBO Emitter Cut-off Current (I C = 0) EB = 3 15 na (BR)CEO (BR)CBO (BR)EBO CE(sat) BE(sat) Collector-Emitter Breakdown oltage (IB = 0) Breakdown oltage (I E = 0) Emitter-Base Breakdown oltage (I C = 0) Collector-Emitter Saturation oltage I C = 10 ma 40 I C = 10 µa 75 IE = 10 µa 6 IC = 1 ma I C = 0 ma IB = 15 ma I B = ma I C = 1 ma I B = 15 ma Saturation oltage IC = 0 ma IB = ma hfe DC Current Gain IC = 0.1 ma CE = 10 I C = 1 ma CE = 10 I C = 10 ma CE = 10 I C = 1 ma CE = 10 I C = 1 ma CE = 1 IC = 0 ma CE = 10 0.3 1 0.6 1.2 2 ft Transition Frequency IC = 20 ma CE = 20 f = 100MHz 270 MHz IE = 0 CB = 10 f = 1 MHz 4 8 pf Capacitance Emitter-Base I C = 0 EB = 0.5 f = 1MHz 20 25 pf Capacitance NF Noise Figure IC = 0.1 ma CE = 10 f = 1 KHz 4 db f = 200 Hz R G = 1 KΩ hie Input Impedance CE = 10 IC = 1 ma f = 1 KHz 2 8 KΩ CE = 10 I C = 10 ma f = 1 KHz 0.25 1.25 KΩ CCBO C EBO h re Reverse oltage Ratio CE = 10 I C = 1 ma f = 1 KHz CE = 10 I C = 10 ma f = 1 KHz 35 75 100 40 300 8 4 10-4 10-4 h fe Small Signal Current Gain CE = 10 I C = 1 ma f = 1 KHz CE = 10 I C = 10 ma f = 1 KHz 75 300 375 hoe Output Admittance CE = 10 IC = 1 ma f = 1 KHz CE = 10 I C = 10 ma f = 1 KHz Pulsed: Pulse duration = 300 µs, duty cycle 2 % 5 25 35 200 µs µs 2/5
ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit t d Delay Time I C = 1 ma I B = 15 ma 5 10 ns tr Rise Time CC = 30 12 25 ns ts Storage Time IC = 1 ma IB1 = - IB2 = 15 ma 185 225 ns tf Fall Time CC = 30 24 60 ns Pulsed: Pulse duration = 300 µs, duty cycle 2 % 3/5
SOT-23 MECHANICAL DATA DIM. mm mils MIN. TYP. MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 4/5
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