Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices
Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG 11. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGA61, Silicon Germanium Broadband MMIC Amplifier Revision History: 11-9-, Rev..1 Previous Version: 3-11- Page Subjects (major changes since last revision) All New Chip Version with integrated ESD protection 5 Electrical Characteristics slightly changed 7- Figures updated All Document layout change Trademarks SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev..1, 11-9-
Silicon Germanium Broadband MMIC Amplifier 1 Silicon Germanium Broadband MMIC Amplifier Feature Cascadable 5 Ω-gain block 3 db-bandwidth: DC to. GHz with 17.5 db typical gain at 1. GHz Compression point P -1dB = 7 dbm at. GHz Noise figure F 5Ω =.1 db at GHz Absolute stable 7 GHz f T - Silicon Germanium technology 1 kv HBM ESD protection (Pin-to-Pin) Pb-free (RoHS compliant) package 3 1 SOT33 Applications Driver amplifier for GSM/PCS/CDMA/UMTS Broadband amplifier for SAT-TV & LNBs Broadband amplifier for CATV Out, 3 IN, 1 GND,, Figure 1 Pin connection Description BGA61 is a broadband matched, general purpose MMIC amplifier in a Darlington configuration. It is optimized for a typical supply current of ma. The BGA61 is based on Infineon Technologies B7HF Silicon Germanium technology. Type Package Marking BGA61 SOT33 BNs Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet Rev..1, 11-9-
Electrical Characteristics Maximum Ratings Table 1 Maximum ratings Parameter Symbol Limit Value Unit Device voltage V D. V Device current I D ma Current into pin In I in.7 ma Input power 1) P in 1 dbm Total power dissipation, T S < 15 C ) P tot 5 mw Junction temperature T J 15 C Ambient temperature range T A -65... 15 C Storage temperature range T STG -65... 15 C ESD capability all pins (HBM: JESD-A11) V ESD 1 V 1) Valid for Z S = Z L =5Ω, =5V, R Bias = 135 Ω ) T S is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table Thermal resistance Parameter Symbol Value Unit Junction - soldering point 1) R thjs K/W 1) For calculation of R thja please refer to Application Note Thermal Resistance Electrical Characteristics Electrical characteristics at T A = 5 C (measured in test circuit specified in Figure ) =5V, R Bias =135Ω, Frequency = GHz, unless otherwise specified Table 3 Electrical Characteristics Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Insertion power gain S 1 1. db f =.1GHz 17.5 db f =1.GHz 16.3 db f =.GHz Noise figure (Z S =5Ω) F 5Ω 1. db f =.1GHz. db f =1.GHz.1 db f =.GHz Output power at 1 db gain P -1dB 7 dbm compression Output third order intercept point OIP 3 17 dbm Input return loss RL in 17 db Output return loss RL out 17 db Total device current I D ma Data Sheet 5 Rev..1, 11-9-
Electrical Characteristics Reference Plane = 5V In Bias-T In GND R Bias = 135Ω I D GND Top View Out Reference Plane V D Bias-T Out Caution: Device Voltage V D at Pin Out! V D = - R Bias I D BGA61_Test_Circuit.vsd Figure Test Circuit for Electrical Characteristics and S-Parameter Data Sheet 6 Rev..1, 11-9-
Measured Parameters 3 Measured Parameters Power Gain S 1, G ma = f(f) = 5V, R Bias = 135Ω, I C = ma Matching S 11, S = f(f) = 5V, R Bias = 135Ω, I C = ma 1 16 G ma S 1 5 S 1, G ma [db] 1 1 1 6 S 11, S [db] 1 15 S S 11 5 1 1 1 1 1 Frequency [GHz] 3 1 1 1 1 1 Frequency [GHz] Power Gain S 1 = f(i D ) f = parameter in GHz Output Compression Point P 1dB = f(i D ), f = GHz S 1 [db] 1 16 1 1 1 1 3 6 P 1dB [dbm] 1 16 1 1 1 6 6 6 I [ma] D 6 I [ma] D Data Sheet 7 Rev..1, 11-9-
Measured Parameters Device Current I D = f( ) R Bias = parameter in Ω Device Current I D = f(t A ) = 5V, R Bias = parameter in Ω I D [ma] 7 6 5 3 16 7 7 6 1 15 I D [ma] 5 3 1 19 1 17 1 135 15 1 16 1 3 5 6 [V] 15 6 T A [ C] Noise figure F = f(f) = 5V, R Bias = 135Ω, Z S = 5Ω T A = parameter in C 3 F [db].5 1.5 + C +5 C C 1.5.5 1 1.5.5 3 Frequency [GHz] Data Sheet Rev..1, 11-9-
Package Information Package Information ±. 1.3 3.1 MAX..1.9 ±.1 A.3 +.1 -.5 x.1 M 1.15 +.1.6 -.5.1 ±.1.1 MIN.. M A.15 +.1 -.5 1.5 ±.1 GPS565 Figure 3 Package Outline SOT33..3 Pin 1.15 1.1 Figure Tape for SOT33 Data Sheet 9 Rev..1, 11-9-