TC7SBL66CFU, TC7SBL384CFU

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SBL66C,384CFU TC7SBL66CFU, TC7SBL384CFU Low Voltage / Low Capacitance Single Bus Switch The TC7SBL66C and TC7SBL384C are a Low Voltage / Low Capacitance CMOS single Bus Switch. The low On-resistance of the switch allows connections to be made with minimal propagation delay time. The TC7SBL66C requires the output enable () input to be set low to place the output into the high impedance state,whereas the TC7SBL384C requires the output enable ( ) input to be set high to place the output into the high impedance. All inputs are equipped with protection circuits against static discharge. Features Weight: 0.006 g (typ.) Operating voltage : = 1.65 to 3.6 V On-capacitance : C I/O = 7 pf Switch On (typ.)@ = 3 V On-resistance : R ON = 5.5 Ω (typ.) @ = 3 V, V I/O = 0 V ESD performance : Machine model ±200 V Human body model ±2000 V Power-down protection for inputs ( and, I/O) Package : USV Pin Assignment (top view) TC7SBL66CFU TC7SBL384CFU 5 4 5 4 J V J O 1 2 3 A B GND 1 2 3 A B GND 1 Start of commercial production 2008-06

Truth Table Inputs (66) Inputs (384) Function H L A port = B port L H Disconnect System Diagram TC7SBL66CFU TC7SBL384CFU A B A B 2

Absolute Maximum Ratings (Note) Characteristic Symbol Rating Unit Power supply range 0.5 to 4.6 V Control pin input voltage (,) V IN 0.5 to 4.6 V Switch terminal I/O voltage = 0 V or Switch = Off V S 0.5 to 4.6 Switch = On V S 0.5 to +0.5 V Clump diode current I IK 50 ma Switch I/O current I S 50 ma Power dissipation P D 200 mw DC /GND current I CC /I GND ±100 ma Storage temperature T stg 65 to 150 C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ranges (Note) Characteristic Symbol Rating Unit Power supply voltage 1.65 to 3.6 V Control pin input voltage (,) V IN 0 to 3.6 V Switch terminal I/O voltage = 0 V or Switch = Off V S 0 to 3.6 Switch = On V S 0 to V Operating temperature T opr 40 to 85 C Input rise and fall time dt/dv 0 to 10 ns/v Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either or GND. 3

Electrical Characteristics DC Characteristics (Ta = 40 to 85 C) Parameter Symbol Test Condition (V) Min Typ. (Note1) Max Unit Input voltage (, ) Input leakage current (, ) H level V IH 1.65 to 3.6 0.7 L level V IL 1.65 to 3.6 I IN V IN = 0 to 3.6 V 1.65 to 3.6 Power-off leakage current I OFF,, A,B = 0 to 3.6 V 0 10 μa Off-state leakage current (switch off) On resistance (Note2) I SZ R ON A, B = 0 to, = GND (66), = VCC (384) 0.3 ±1.0 V μa 1.65 to 3.6 ±1.0 μa V IS = 0 V, I IS = 30 ma (Note 1) 3.0 5.5 10 V IS = 3.0 V, I IS = 30 ma (Note 1) 3.0 10 16 V IS = 2.4V, I IS = 15 ma (Note 1) 3.0 12 18 V IS = 0 V, I IS = 24 ma (Note 1) 2.3 6 10 V IS = 2.3 V, I IS = 24 ma (Note 1) 2.3 13 20 V IS = 2.0V, I IS = 15 ma (Note 1) 2.3 15 21 V IS = 0 V, I IS = 4 ma (Note 1) 1.65 7 13 V IS = 1.65 V, I IS = 4 ma (Note 1) 1.65 18 27 Quiescent supply current I CC V IN = or GND, I OUT = 0 3.6 10 μa Note 1: All typical values are at Ta = 25 C. Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (A or B) pins. Ω AC Characteristics (Ta = 40 to 85 C) Characteristics Symbol Test Condition (V) Min Max Unit Output enable time t pzl Figure 1, Figure 2 t pzh 3.3±0.3 6 2.5 ± 0.2 7 1.8 ± 0.15 11 ns Output disable time t plz Figure 1, Figure 2 t phz 3.3±0.3 6 2.5 ± 0.2 7 1.8 ± 0.15 11 ns Capacitive Characteristics (Ta = 25 C) Characteristics Symbol Test Condition (V) Typ. Unit Control pin input capacitance C IN V IN = 0 V (Note) 3.0 4 pf Switch terminal capacitance (Switch Off) Switch terminal capacitance (Switch On) C I/O = GND (66), = (384), V IS = 0 V (Note) 3.0 3.5 pf C I/O = (66), = GND (384), V IS = 0 V (Note) 3.0 7 pf Note: This parameter is guaranteed by design. 4

R ON - V IS Characteristic (typ.) Ta=25 30 25 20 RON [Ω] 15 10 =2.3V, I IS =24mA 5 =3.0V, I IS =30mA 0 0 0.5 1 1.5 2 2.5 3 V IS [V] 5

AC Test Circuit Switch Open 2 GND Parameter Switch RL t plz, t pzl 2 Output Measure t phz, t pzh GND CL RL C L = 50 pf R L = 500 Ω Figure 1 AC Waveform t f 2.5 ns t r 2.5 ns Output Enable ((66) or (384)) 90% 50% 10% GND t plz t pzl Output (A, B) Low to Off to Low t phz 10% t pzh 50% V OH V OL Output (A, B) High to Off to High 90% 50% V OH Outputs enabled Outputs disabled Outputs enabled V OL Figure 2 t plz, t phz, t pzl, t pzh 6

Rise and Fall Times (tr / tf) of the TC7SBL66C, 384C I/O Signals The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists of the switch terminal capacitance (C I/O ) and the on-resistance (R ON ) of the input. In practice, the tr(out) and tf(out) values are also affected by the circuit s capacitance and resistance components other than those of the TC7SBL66CFU, 384CFU. The tr(out) / tf(out) values can be approximated as follows. (Figure 3 shows the test circuit.) tr(out) / tf(out) (approx) = (C I/O + C L ) (R DRIVE + R ON ) ln (((V OH V OL ) V M ) / (V OH V OL )) Calculation example: where, R DRIVE is the output impedance of the previous-stage circuit. tr(out) (approx) = ( 7 + 15 )E 12 (120 + 5.5) ln (((3.0 0) 1.5 ) / (3.0 0)) 1.9 ns Calculation conditions: = 3.0 V, C L = 15 pf, R DRIVE = 120 Ω (output impedance of the previous IC), V M = 1.5 V ( / 2) Output voltage of the previous IC = digital (i.e., high-level voltage = ; low-level voltage = GND) Previous IC R DRIVE Waveform generated without the TC7SBL66C,384C Measure CL GND R DRIVE = output impedance of the previous IC Previous IC TC7SBL66C TC7SBL384C R DRIVE A/B C I/O (Switch On) B/A Waveform generated with the TC7SBL66C,384C added Measure V OH = V M V M R ON CL V OL tr(out) tf(out) R DRIVE = output impedance of the previous IC Parameter 3.3 ± 0.3 V 2.5 ± 0.2 V 1.8 ± 0.15 V V M / 2 / 2 / 2 Figure 3 Test Circuit 7

Package Dimensions Weight: 0.006 g (typ.) 8

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