SILICON RF DEVICES. Silicon RF Devices

Similar documents
SILICON RF DEVICES. Better Performance for Radio Communication Network. Silicon RF Devices

Better Performance for Radio Communication Network

SILICON RF DEVICES. Sillicon RF Devices

Better Performance For Radio Communication Network

SILICON RF DEVICES. Sillicon RF Devices

< Silicon RF Power MOS FET (Discrete) > RD100HHF1C DESCRIPTION FEATURES APPLICATION. RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS

MITSUBISHI RF MOSFET MODULE RA01L9595M

OUTLINE DRAWING SYMBOL PARAMETER CONDITIONS RATINGS UNIT

< Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz, 6W, 12.5V DESCRIPTION FEATURES APPLICATION

<Silicon RF Power Modules > RA55H4452M RoHS Compliance, MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

OUTLINE DRAWING 6.0+/ INDEX MARK (Gate)

<Silicon RF Power Modules > RA30H1721M RoHS Compliance, MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION

< Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO


< Silicon RF Power MOS FET (Discrete) > RD16HHF1 DESCRIPTION FEATURES APPLICATION. RoHS COMPLIANT PINS 1:GATE 9.5MAX

8.0+/-0.2. (d) (4.5) INDEX MARK [Gate] SIDE VIEW

MITSUBISHI RF MOSFET MODULE RA35H1516M

<Silicon RF Power Modules > RA60H1317M RoHS Compliance, MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO

Silicon RF Power Semiconductors RA03M4547MD

<Silicon RF Power Modules > RA08H1317M RoHS Compliance, MHz 8W 12.5V, 2 Stage Amp. For PORTABLE RADIO

< Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

RoHS COMPLIANT MGF4841AL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.

SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V

OUTLINEDRAWING SYMBOL PARAMETER CONDITIONS RATINGS UNIT

RoHS COMPLIANT MGF4841CL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.

< Silicon RF Power Modules > RA60H1317M1B RoHS Compliance, MHz 60W 12.5V, 2 Stage Amp. for Digital Mobile Radio

< Silicon RF Power MOS FET (Discrete) > RD10MMS2

< Silicon RF Power MOS FET (Discrete) > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz, 6W, 12.5V DESCRIPTION FEATURES APPLICATION

07H4452M RA07H4452. Silicon RF Power Semiconductors 1/9. RoHS Compliance, MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO

RoHS COMPLIANT MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.

OUTLINE DRAWING. SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V

< Silicon RF Power Modules > RA30H4452M1A RoHS Compliance, MHz 30W 12.5V, 2 Stage Amp. For Digital Mobile Radio

OUTLINE DRAWING. SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 25 V

< Silicon RF Power MOS FET (Discrete) > RD35HUP2 RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W, 12.5V

< Silicon RF Power Modules > RA60H4452M1 RoHS Compliance, MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

<TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE

OUTLINE DRAWING Pin 1. SOURCE (COMMON) 2. OPEN 3. DRAIN 4. SOURCE (COMMON) 5. SOURCE (COMMON) 6. OPEN 7. GATE 8.

HIGH FREQUENCY DEVICES. Mitsubishi High Frequency Solutions for Communication Networks in the Information Era. High Frequency Devices

< Silicon RF Power Modules > RA30H1317M1A RoHS Compliance, MHz 30W 12.5V, 2 Stage Amp. for Digital Mobile Radio

1SS120. Silicon Epitaxial Planar Diode for High Speed Switching. Features. Ordering Information. Pin Arrangement

2SJ160, 2SJ161, 2SJ162

2SK2568. Silicon N Channel MOS FET. Application. Features. Outline. REJ03G (Previous: ADE ) Rev.3.00 Sep 07, 2005

RT8H255C PIN CONFIGURATION. FEATURE The miniaturization of a set and high-density mounting are possible. APPLICATION IGBT Gate Driver 1.1±0.

Item Symbol Ratings Unit Drain to Source voltage V DSS 300 V Gate to Source voltage V GSS ±30 V Drain current I D 88 A Drain peak current.

< Silicon RF Power Modules > RA03M8087M RoHS Compliance, MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO

< Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio

VLA QR HYBRID IC 4OUTPUT ISOLATED DC-DC CONVERTER DISCRIPTIONS OUTLINE DRAWING FEATURES APPLICATION BLOCK DIAGRAM. Regulator.

APPLICATION NOTE. Achieving Accuracy in Digital Meter Design. Introduction. Target Device. Contents. Rev.1.00 August 2003 Page 1 of 9

RT3DKAM DKA ISAHAYA ELECTRONICS CORPORATION SMALL-SIGNAL DIODE

2SB739. Silicon PNP Epitaxial. Application. Outline. Absolute Maximum Ratings. REJ03G (Previous ADE ) Rev.2.00 Aug.10.

2SC1345. Silicon NPN Epitaxial. Application. Outline. Absolute Maximum Ratings. REJ03G (Previous ADE A) Rev.3.00 Sep.10.

Preliminary VLA GTR HYBRID IC ISOLATED DC-DC CONVERTER DESCRIPTION OUTLINE DRAWING FEATURES APPLICATIONS BLOCK DIAGRAM 1 N.C.

2SB740. Silicon PNP Epitaxial. Application. Outline. Absolute Maximum Ratings. REJ03G (Previous ADE ) Rev.2.00 Aug.10.

CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >

< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION

< HVIC > M81745JFP HIGH VOLTAGE HALF BRIDGE DRIVER (for Automotive)

M52769FP DESCRIPTION FEATURES RECOMMENDED OPERATING CONDITIONS APPLICATION

page.1 IGBT Gate Drive Unit Apr.07, 09

HD74LV2G66A. 2 channel Analog Switch. Description. Features. REJ03D Z (Previous ADE C (Z)) Rev.4.00 Sep

Using the M16C/62 Analog to Digital Converter in Repeat Sweep Mode 0

VLA574-01R V I + V CC DETECT C trip V O V I - F O C S V EE TIMER & RESET LATCH DETECT. 1kΩ INTERFACE UVL 240Ω GATE SHUT DOWN BLOCK DIAGRAM DESCRIPTION

Successive approximation (capacitive coupling amplifier)

IGBT Gate Drive Unit VLA598-01R

CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Aug Planar Passivation Type

2SK2937. Silicon N Channel MOS FET High Speed Power Switching. Features. Outline. REJ03G (Previous: ADE C) Rev.5.

RA30H4452M MITSUBISHI RF MOSFET MODULE 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MHz 30W 12.

MITSUBISHI RF MOSFET MODULE RA30H1317M

MGF4951A/MGF4952A. SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

MITSUBISHI RF MOSFET MODULE RA45H4047M

M16C/26 APPLICATION NOTE. Using The M16C/26 Timer in PWM Mode. 1.0 Abstract. 2.0 Introduction

M16C/26 APPLICATION NOTE. Using Timer A in One-Shot Mode. 1.0 Abstract. 2.0 Introduction

IGBT Gate Drive Unit VLA598-11R

MITSUBISHI RF MOSFET MODULE RA07M3843M

MITSUBISHI RF MOSFET MODULE RA07H0608M

MITSUBISHI RF MOSFET MODULE RA30H1317M1. RoHS Compliance, MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

MITSUBISHI RF MOSFET MODULE

RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W

MITSUBISHI RF POWER MOS FET RD01MUS2. RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

R1RP0416D Series. 4M High Speed SRAM (256-kword 16-bit) Description. Features. Ordering Information. REJ03C Z Rev Mar.12.

MITSUBISHI RF MOSFET MODULE RA33H1516M1

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

Pulse period. Pulse low width. Pulse high width. Pulse high width. Pulse high width Pulse period

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W

MITSUBISHI RF MOSFET MODULE

PS22A78-E Transfer-Mold Type Insulated Type

Silicon Planar Zener Diode for Bidirectional Surge Absorption

RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W

MITSUBISHI RF MOSFET MODULE

Old Company Name in Catalogs and Other Documents

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING 24.0+/-0.6

RKV502KJ. Variable Capacitance Diode for VHF tuner. Features. Ordering Information. Pin Arrangement. REJ03G Rev.1.

VLA542-01R. 3,7,9,10 pin : Non connection DESCRIPTION FEATURES APPLICATIONS BLOCK DIAGRAM HYBRID IC. Hybrid IC for driving IGBT modules

Old Company Name in Catalogs and Other Documents

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OUTLINE DRAWING 24.0+/-0.6

< HVIC > M81748FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER

FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE

Transcription:

SILICON RF DEVICES Silicon RF Devices

Better Performance for Radio Communication Network Mitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio, Professional Mobile Radios, Amateur Radios, Car Phones for GSM/AMPS and TELEMATICS for automotive. Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network. LINE UP Silicon RF Devices FET Hybrid IC SELECTION MAP HIGH OUTPUT POWER Si MOS FET (DISCRETE) Output Power [W] 00 RD00HHF RD0HHF RD0HVF RDHVF RD2MVP/RD2MVS RD6HHF 0 RD0HUF2 RD5HUF2 RD5HVF.6V Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET (Discrete) v Operation High Output Power Si MOS FET Module 9.6v Operation High Output Power Si MOS FET Module v Operation High Output Power Si MOS FET Module RDHUF RDHUF RD0MMS2 MAP For SELECTION 2 2 2 RDHMS2 RDHMF RDHMS2 RD20HMF PRODUCT LIST 5 5 6 : V Operation : V Operation :.6V Operation 5 RD06HHF RD06HVF RD00HHS RD0MUS2B RD09MUP2 RD02LUS2 RD02MUSB RD0MUS2B RD00HVS RD05MMP RD04HMS2 0 5 5 0 00 900 GHz Frequency [MHz] : Under Development

HIGH OUTPUT POWER Si MOS FET MODULE Output Power [W] 80 RA80H45M RAHMA/RAHM RAH84M/4M/42M : V Operation : 9.6V Operation RAHM/84M/4M/42M : V Operation RAH4M/42M RAH68M RAH8994M RA5H56M/RAH56M RAHM/RAHM RAHM/4M/42M/4M/52M RAH2M RAH22M RAH08M RA20H808M RA20H8994M 20 RAHM RAHM/4M/42M RAH889MB RA0NM/4M/42M RA0M08M RA0HM/4M/42M 0 RA08NM RA08HM RA0MM/4M/42M RA0H08M RA0MM RA0M22M RA0M84M RA02M808MD RA0M808M RA06H8285M RA0M9595M (8V) RA0M8894M RA0M5MD/4MD/4MD 68 88 5 5 28 20 806 80 889 94 Frequency [MHz] : New Product 2

PRODUCT LIST.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number Structure RD02LUS2 25 8.6 Ta=25 C : Gate Protection Diode : Under Development Max.ratings VDSS [V] Pch [W] f [MHz] V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number RD0MUS2B RD02MUSB RD05MMP RD0MUS2B RD09MUP2 RD0MMS2 RD2MVP RD2MVS Structure Ta=25 C : Gate Protection Diode : Under Development Max.ratings VDSS [V] 25 25 Pch [W].6 2.9 8 62 25 f [MHz] 52 5/ 94 5~5 4~52 80 5 5 V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE) Type Number RD00HHS RD00HVS RD04HMS2 RD06HHF RD06HVF RD5HVF RD6HHF RD20HMF RDHVF RDHUF RDHMS2 RD5HUF2 RDHMF RDHMS2 RDHUF RD0HHF RD0HVF RD0HUF2 RD00HHF Structure Max.ratings VDSS [V] Pch [W].. 2.8 2.8 48 56.8.4 5 5 66 66 25 0 0 6.5 f [MHz] 5 5~5 80~ 890~9 5 5/ 900 5 5~5 4~5 900 5~5 4~5 900 5~5 4~5 900 5/ 5~5 4~5 Pin [W] 0.2 Pin [W] 0.0 / 0. 0. 0.4 0.8 0.5 Pin [W] 0.004 0.005 0.2 0.2 0.2 0.5 0. 0.6/ 0.4 5 5 4 5.5 0.5 6/0 4 5.5 Po (min) [W] 2.typ. Po (min) [W].6typ. 2/2 5.5 6. 8 2typ. 0.5 Po (min) [W] 0. 0.5 5.5typ. 6typ. 5typ. 6 6 5/5 6 20 typ. 4typ. typ. typ. 4typ. 84typ. 5typ. 5typ. 0 0/ 84typ. 5typ. 00 nd (min) [%] 0typ. nd (min) [%] 0typ. / 4 58 58 58typ. nd (min) [%] typ. 62typ. 5typ. / 2typ. typ. typ. 2typ. typ. 4typ. 64typ. typ. / 4typ. 64typ. Package SOT-89 Package SOT-89 SLP PMM SLP PMM SLP PMM SLP Package SOT-89 SOT-89 SLP TO-220S TO-220S TO-220S TO-220S Ceramic (Small) Ceramic (Small) Ceramic (Small) HPM00 HPM00 Ceramic (Large) HPM004 Ceramic (Large) Ceramic (Large) Ceramic (Large) HPM002 Ceramic (Large) Ta=25 C : Gate Protection Diode : Under Development

SOT-89 SLP TO-220S PMM HPM Ceramic (Small) Ceramic (Large) Type Name Definition of Silicon RF Devices HIGH OUTPUT POWER Si MOS FET (Discrete Devices) RD 0 M U S 2B Si MOS FET (Discrete) Output Power (W) Operation Voltage (V) Symbol HIGH OUTPUT POWER Si MOS FET MODULE M N H Voltage V 9.6V V RA 0 M 42 M Frequency Range (MHz) Symbol Frequency Range H MHz V 5MHz U MHz M 800MHz Symbol S F P Segment Mold Flange Power Mold Mini Serial Number Module Operation Voltage (V) Frequency Range (MHz) Frequency Unit Output Power (W) Symbol M N H Voltage V 9.6V V Symbol (Example) 42 Frequency Range (Example) 4~ MHz 5~ 5MHz Symbol M G Unit MHz GHz Note: Type number show the outline of products. For detail specification, Please confirm a formal specification. 4

PRODUCT LIST V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C *: When Po=2.5W *2: When Po=6.W 9.6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE RA0NM RA0N4M RA0N42M RA08NM Ta=25 C Type Number RA02M808MD RA0M5MD RA0M4MD RA0M4MD RA0M808M RA0M8894M RA0M9595M RA0M08M RA0MM RA0M22M RA0MM RA0M84M RA0M4M RA0M42M Type Number Max.ratings Max.ratings f [MHz] min 806 0 4 806 889 952 66 5 25 8 0 4 f [MHz] min 0 4 5 max 869 0 4 80 94 954 88 5 20 0 4 max 0 5 HS H54 8 9.6 9.6 9.6 9.6 Pin [W] 0.0 0.0 0.0 0.0 0.0 Pin [W] Po (min) [W].2.2.2.2.6.6 6.5 Po (min) [W].5.5.5 8 nd (min) [%] * 4* 2 4* 2 4* 2 2 2 - nd (min) [%] 4 4 4 Package H54 H54 H54 H54 Package H5 5

V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE Ta=25 C : New Product All Products Here Are RoHS Compliant RA06H8285M RA0H08M RA0HM RA0H4M RA0H42M RA08HM RA08H84MD RA08H4MD RAHM RAHM RAH4M RAH42M RAH889MA RAH889MB RA20H808M RA20H8994M RAH08M RAHM RAHM RAH2M RAH22M RAHM RAH4M RAH4M RAH42M RAH52M RAH56M RA5H56M RAHMR RAH4M RAH42M RAH68M RAH8994M RAHM RAH84M RAH4M RAH42M RAHM RAHMA RAH84M RAH4M RAH42M RA80H45M.2.2.2.2.2 8 820 68 0 4 5 80 4 5 0 4 889 880 806 896 66 5 5 5 20 0 0 4 4 54 54 0 0 4 6 896 80 0 4 5 6 8 0 4 44 6 85 88 0 5 4 5 0 95 95 80 94 88 5 5 25 20 0 62 62 4 80 94 0 5 4 48 4 0.00 0.0.4m 0.m 0.2 0.00 0.0.2 2.8 2.8 6 8 6..9 20 20 (490-) (4-490) 80 5 8 5 5 25 25 42 42 5 5 5 5 8 5 5 (490-) 4 (4-490) HS (5-pins) (5-pins) HS H5 H2RS Type Number f [MHz] min max Max.ratings Pin [W] Po (min) [W] nd (min) [%] Package 6

APPLICATION VHF~800MHZ BAND V OPERATION RECOMMENDED LINE UP 5mW mw mw RD00HVS RD0MUS2B RD0MUS2B RD5HVF RD02MUSB RD0MUS2B RD0MUS2B RD0HVF 2W @5 5MHz W @5 5MHz 5W @806 80MHz 0.W W @5 5MHz RD04HMS2 RD0HUF2 0.2W 0W @5 5MHz 4 MHz 5mW mw VHF~UHF BAND V OPERATION RECOMMENDED LINE UP W RD00HVS RD0MUS2B RD5HVF RD04HMS2 RD02MUSB RD0MUS2B RDHUF RD5HUF2 2W @4 MHz W @4 MHz W @4 MHz 0.2W 5W @5 5MHz 4 MHz Precautions for the use of Mitsubishi Electric silicon RF power amplifier devices 0.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information. 02.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 0.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 04.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than deg/c under standard conditions, and less than 90deg/C under extreme conditions. 05.RA series products are designed to operate into a nominal load impedance of ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and smoking of other parts including the substrate in the module. 06.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 0.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 08.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it s original form. 09.For additional Safety first in your circuit design and notes regarding the materials, please refer the last page of this manual. 0.Please refer to the additional precautions in the formal specification sheet. MITSUBISHI ELECTRIC SEMICONDUCTORS GLOBAL WEB SITE http://www.mitsubishielectric.com/semiconductors/

PACKAGE OUTLINE SOT-89 Gate Source Drain TO-220S Gate Source Drain 2.5±0. 0.8MIN SLP 0.4±0.0 6.0±0.5.5±0. Drain Source 4.4±0..6±0. ø.0 4.9±0.5 INDEX MARK (Gate) 0.5±0.0.0 0.2± 0.9*±0..5±0. Gate 0. MAX Ceramic (Small) 0.4±0.0 0.2±.0± (0.25) 0.4 +0.0/ * The dimensions of new products are 0.5 ±0.5 2.8±0. 22.0±0. 8.0±0..6±0. + 0.0 Drain Source 6.6±0..5±0. 4.6±.± 0.8± 4-C 4.0±0.4 ø.2±0.5 2.±0..0±0.4* Gate 5.±0.5.9±0. 2.0± (0.25) (0.22).5± (0.22) 2.±0.6.2±0.4 2.MIN PMM (.6) INDEX MARK [Gate] 0.±0. 9±0.4 4.8MAX 5deg 8.0±0.2 TOP VIEW SIDE VIEW 9.±0. 2.5 2.5 9.5MAX.2±0.4.±0.6 Drain [output] Source [GND] 0.2± Ceramic (Large) 24.0±0.6 (4.5) 6.2±0.2 DETAIL A.8±0. Standoff=max 25.0±0..0±0.5.0±0. 5.0±0. 8.5±0.25.6±0.2 0.8+/ 0.5 4.5±0.5 SIDE VIEW DETAIL A.±0.4 0.5+/ 0.5 Gate [input] Source 5.6±0.2 4.2±0.2 0.95±0.2 Drain Source 4 C2 0.0±0. ø.2±0.5.±0.2.0±0.2 2.6±0.2 BOTTOM VIEW Gate 0. + 0.0 6.±0.5 4.5±0. * 0.65±0.2 * The height of terminals shows root. * The height of terminals shows root. 8

PACKAGE OUTLINE HPM00 5.56 Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) a-a SECTION 2.95 2.69 6.8.0.5 RF Input(Pin) Gate Voltage(VGG) 24. 8.00 a HPM00 (with CenterSourceElectrode) 5.56 (.) (4.4) 6.0±.0 2.±0.4 26.6±0.2 2.2±0.2 6.±.0.±.0 8.8±.0 2.9±.0 Area "A" a-a SECTION Pin SOURCE (COMMON) OPEN DRAIN SOURCE (COMMON) SOURCE (COMMON) OPEN GATE SOURCE (COMMON) SOURCE (COMMON) 8.5 6.8 (5.4).0.0±0.2 ().0. 2. +0.04 0 a..6 0.22 0.4 Drain Voltage(VDD) RF Output(Pout) 0.±0.5 (.5) 24. 8.00 0. a' a..5±0.2 6.0±0.2 0.0±0.2.5±0.2.6 0.22 (5.4).65.6 0.4 2- R.5±0. 5.8 ø.0 5.88 ø.0 RF Ground(Fin) 6.0±0.2.4±0.2 tolerance of no designation ; ±0.5 HPM002 (with CenterSourceElectrode) 5.56 Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON).0±0. 5±0.8 2.0±0.5 9.5±0.5 4.0± a-a SECTION RF Input(Pin) Gate Voltage(VGG) 2.0±0.5.+0.6/ 0.4 0.09± 2.95 2.69 6.8 2.0±.0 6.5± 4.5±.5± 24. 8.00 a 0.. a.0.6 HPM004 (with CenterSourceElectrode) 5.56 a-a SECTION Pin SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SOURCE (COMMON) 8.5 6.8.0.0. Drain Voltage(VDD) RF Output(Pout) 66.0±0.5.0±0.5 5.5±0.5 2-R2±0.5 (.4) 2.. 24. 8.00 0. a' a. 0.22.6 0.22.6 4.0±0. ø0.±0.5 2.±0..5±0.5.6 0.4 0.4.0±0.5 (9.8) 5.88 ø.0 5.88 ø.0 RF Ground(Fin) 9

H2RS 2 R2±0.5 9.4± 5± 0.±.+0.6/ 0.4 H5 4.4 ±0.5.0±0. 5±0.8 2.0±0.5 9.5±0.5 4.0± 2.0±0.5.+0.6/ 0.4 0.09± RF Input(Pin) Gate Voltage(VGG) RF Input(Pin) Gate Voltage(VGG) ± ± 0.5±.00±0.8 8.08±0.8 25.0±0.8 5.86±0.8 6± ± 49.8± Drain Voltage(VDD) RF Output(Pout) Drain Voltage(VDD) RF Output(Pout) 44± 56± 66.0±0.5.0±0.5 5.5±0.5 2 R2±0.5 22.5± 49.5± 54.0± (.4) RF Input(Pin) Gate Voltage(VGG) 4.0±0. ø0.±0.5 2.±0..5±0.5.0±0.5 (9.8) (.26) 0.6±0.2 (2.6) RF Ground(Fin) 4±0.5.±0.5 RF Ground(Fin) 8± (9.9) 46.0 4.0.8 2 R.5±0. Drain Voltage(VDD) RF Output(Pout) 0± 0.6±0.0.0 2.0 RF Ground(Fin) (6.) (2.).0 +0.6 0.4 HS H54 4±0.5.+0.8/ 0.4 (.) (4.4) 6.0±.0 2.±0.4 0.09± RF Input(Pin) Gate Voltage(VGG) 8.± 2.± 4.± 5.± (49.5) Drain Voltage(VDD) RF Output(Pout).5± 5.5±0.5.4± 2 R.6±0.2 ø0.±0.5 2.±0. ±0.5 6± (6.4) RF Ground(Fin) RF Input(Pin) Final Stage Gate Voltage(VGG2) RF Output(Pout) First Stage Gate Voltage(VGG) Drain Voltage(VDD) RF Ground(Fin) 26.6±0.2 2.2±0.2 6.±.0 0.4±.0.±.0 8.8±.0 2.9±.0 Area "A".0±0.2 (5.4) () +0.04 0 0.±0.5.0 +0.6 0.4 (.5).5±0.2 6.0±0.2 0.0±0.2 (6.).5±0.2 2- R.5±0. (5.4) 6.0±0.2.4±0.2 tolerance of no designation ; ±0.5 (2.) 0

SILICON RF DEVICES Please visit our website for further details. www.mitsubishielectric.com Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/). When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. HEAD OFFICE: TOKYO BLDG., 2--, MARUNOUCHI, CHIYODA-KU, TOKYO 00-80, JAPAN www.mitsubishielectric.com H-CX624-L KI- Printed in Japan (TOT) 20 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. New publication effective Nov. 20. Specifications subject to change without notice.

2024 © hobbydocbox.com Privacy Policy | Terms of Service | Feedback