Low-power Audio Amplifier for Telephone Applications U4083B

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Features Wide Operating Voltage Range: 2V to 16V Low Current Consumption: 2.7 ma Typically Chip Disable Input to Power Down the Integrated Circuit Low Power-down Quiescent Current Drives a Wide Range of Speaker Loads Output Power P o = 25 mw at R L = 32Ω (Speaker) Low Harmonic Distortion (.5% Typically) Wide Gain Range: db to 46 db Benefits Low Number of External Components Low Current Consumption 1. Description The integrated circuit is a low-power audio amplifier for telephone loudspeakers. It has differential speaker outputs to maximize the output swing at low supply voltages. There is no need for coupler capacitors. The has an open-loop gain of 8 db where the closed-loop gain is adjusted with two external resistors. A chip disable pin permits powering down and/or muting the input signal. Low-power Audio Amplifier for Telephone Applications Figure 1-1. Block Diagram Vi FC3 4 3 Amp1 4k 4k 6 5 VS VO1 FC2 5k 2 125k Amp2 8 VO2 5k Bias circuit 1 CD 7 GND Rev.

2. Pin Configuration Figure 2-1. Pinning SO8 CD 1 8 VO2 FC2 2 7 GND FC1 3 6 V i 4 5 VO1 Table 2-1. Pin Description Pin Symbol Function 1 CD Chip disable 2 FC2 Filtering, power supply rejection 3 FC1 Filtering, power supply rejection 4 V i Amplifier input 5 VO1 Amplifier output 1 6 Voltage supply 7 GND Ground 8 VO2 Amplifier output 2 2

3. Functional Description Including External Circuitry 3.1 Pin 1: Chip Disable Digital Input (CD) Pin 1 (chip disable) is used to power down the IC to conserve power or mute the IC or both. Input impedance at Pin 1 is typically 9 kω. Logic <.8V IC enabled (normal operation) Logic 1 > 2V IC disabled Figure 8-15 on page 12 shows the power supply current diagram. The change in differential gain from normal operation to muted operation (muting) is more than 7 db. Switching characteristics are as follows: Turn-on time t on = 12 ms to 15 ms Turn-off time t off 2 µs They are independent of, C 2 and. Voltages at Pins 2 and 3 are supplied from and, therefore, do not change when the is disabled. The outputs, V O1 (Pin 5) and V O2 (Pin 8), turn to a high impedance condition by removing the signal from the speaker. When signals are applied from an external source to the outputs (disabled), they must not exceed the range between the supply voltage,, and ground. 3.2 Pins 2 and 3: Filtering, Power Supply Rejection Power supply rejection is provided by capacitors and C 2 at Pin 3 and Pin 2, respectively. is dominant at high frequencies whereas C 2 is dominant at low frequencies (Figure 8-4 on page 8 to Figure 8-7 on page 9). The values of and C 2 depend on the conditions of each application. For example, a line-powered speakerphone (telephone amplifier) will require more filtering than a system powered by regulated power supply. The amount of rejection is a function of the capacitors and the equivalent impedance at Pin 3 and Pin 2 (see electrical characteristic equivalent resistance, R). Apart from filtering, capacitors and C 2 also influence the turn-on time of the circuit at power up, since the capacitors are charged up through the internal resistors (5 kω and 125 kω) as shown in the block diagram. Figure 8-1 on page 7 shows the turn-on time versus C 2 at = 6V, for two different values. The turn-on time is 6% longer when = 3V and 2% shorter when = 9V. The turn-off time is less than 1 µs. 3

3.3 Pin 4: Amplifier Input V i, Pin 5: Amplifier Output 1 V O1, Pin 8: Amplifier Output 2 V O2 There are two identical operational amplifiers. Amplifier 1 has an open-loop gain 8 db at 1Hz (Figure 8-2 on page 7), whereas the closed-loop gain is set by external resistors, R f and R i (Figure 8-3 on page 8). The amplifier is unity gain stable, and has a unity gain frequency of approximately 1.5 MHz. A closed-loop gain of 46 db is recommended for a frequency range of 3Hz to 34Hz (voice band). Amplifier 2 is internally set to a gain of 1. db ( db). The outputs of both amplifiers are capable of sourcing and sinking a peak current of 2 ma. Output voltage swing is between.4v and 1.3V at maximum current (Figure 8-18 on page 13 and Figure 8-19 on page 13). The output DC offset voltage between Pins 5 and 8 (V O1 V O2 ) is mainly a function of the feedback resistor, R f, because the input offset voltages of the two amplifiers neutralize each other. Bias current of Amplifier 1 which is constant with respect to V s, flows out of Pin 4 (V i ) and through R f, forcing V O1 to shift negative by an amount equal to R f I IB and V O2 positive to an equal amount. The output offset voltage specified in the electrical characteristics is measured with the feedback resistor (R f = 75 kω) shown in the typical application circuit, Figure 8-2 on page 14. It takes into account the bias current as well as internal offset voltages of the amplifiers. 3.4 Pin 6: Supply and Power Dissipation Power dissipation is shown in Figure 8-8 on page 9 to Figure 8-1 on page 1 for different loads. Distortion characteristics are given in Figure 8-11 on page 1 to Figure 8-13 on page 11. T P jmax T amb totmax = -------------------------------- R thja where T jmax = Junction temperature = 14 C T amb = Ambient temperature R thja = Thermal resistance, junction-ambient Power dissipated within the IC in a given application is found from the following equation: P tot = ( I S ) + (I RMS ) (R L I RMS 2 ) I S is obtained from Figure 8-15 on page 12. I RMS is the RMS current at the load R L. The IC's operating range is defined by a peak operating load current of ±2 ma (Figure 8-8 on page 9 to Figure 8-13 on page 11). It is further specified with respect to different loads (see Figure 8-14 on page 12). The left (ascending) portion of each of the three curves is defined by the power level at which 1% distortion occurs. The center flat portion of each curve is defined by the maximum output current capability of the integrated circuit. The right (descending) portion of each curve is defined by the maximum internal power dissipation of the IC at 25 C. At higher ambient temperatures, the maximum load power must be reduced according to the above mentioned equation. 4

3.5 Layout Considerations Normally, a snubber is not needed at the output of the IC, unlike many other audio amplifiers. However, the PC-board layout, stray capacitances, and the manner in which the speaker wires are configured may dictate otherwise. Generally, the speaker wires should be twisted tightly, and should not be more than a few cm (or inches) in length. 4. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Reference point pin 7, T amb = 25 C unless otherwise specified. Parameters Symbol Value Unit Supply voltage Pin 6 1. to +18 V Voltages Disabled Pins 1, 2, 3 and 4 Pins 5 and 8 1. to ( + 1.) 1. to ( + 1.) Output current Pins 5 and 8 ±25 ma Junction temperature T j +14 C Storage temperature range T stg 55 to +15 C Ambient temperature range T amb 2 to +7 C Power dissipation SO8: T amb = 6 C P tot 44 mw V V 5. Thermal Resistance Parameters Symbol Value Unit Junction ambient SO8 R thja 18 K/W 6. Recommended Operating Conditions Parameters Symbol Value Unit Supply voltage Pin 6 2 to 16 V Load impedance Pins 5 to 8 R L 8. to 1 Ω Load current I L ±2 ma Differential gain (5. khz bandwidth) DG to 46 db Voltage at CD Pin 1 V CD V Ambient temperature range T amb 2 to +7 C 5

7. Electrical Characteristics T amb = +25 C, reference point pin 7, unless otherwise specified Parameters Test Conditions Symbol Min. Typ. Max. Unit Amplifiers (AC Characteristics) Open-loop gain (Amplifier 1, f < 1Hz) G VOL1 8 db Closed-loop gain (Amplifier 2) = 6.V, f = 1. khz, R L = 32Ω G V2.35 +.35 db Gain bandwidth product G BW 1.5 MHz Output power Total harmonic distortion (f = 1. khz) Power supply rejection ratio Muting Amplifiers (DC Characteristics) Output DC level at V O1, V O2 R f = 75 kw Output high level Output low level Output DC offset voltage (V O1 V O2 ) = 3.V, R L = 16Ω, d < 1% = 6.V, R L = 32Ω, d < 1% = 12V, R L = 1Ω, d < 1% = 6.V, R L = 32Ω, P o = 125 mw > 3.V, R L = 8Ω, P o = 2 mw > 12V, R L = 32Ω, P o = 2 mw = 6.V, = 3.V = α, C 2 =.1 µf =.1 µf, C 2 =, f = 1. khz = 1. µf, C 2 = 5. µf, f = 1. khz P O P O P O d d d PSRR PSRR PSRR 55 25 4 5.5.5.6 12 52 mw 1. % = 6.V, 1. khz < f < 2 khz, CD = 2.V G MUTE >7 db = 3.V, R L = 16Ω = 6.V = 12V I O = 75 ma, 2.V < < 16V I O = 75 ma, 2.V < < 16V V O V O V O 1. 1.15 2.65 5.65 db 1.25 V V OH 1 V V OL.16 V = 6.V, R f = 75 kω, R L = 32Ω V O 3 +3 mv Input bias current at V i = 6.V I IB 1 2 na Equivalent resistance at Pin 3 = 6.V R 1 15 22 kω Equivalent resistance at Pin 2 = 6.V R 18 25 4 kω Chip disable Pin 1 Input voltage low Input voltage high Input resistance Power supply current = V CD = 16V = 3.V, R L = α, CD =.8V = 16V, R L = α, CD =.8V = 3.V, R L = α, CD = 2.V V IL V IH 2. R CD 5 9 I S I S I S 65.8 175 4. 5. 1 V V kω ma ma µa 6

G (db) Phase (Degrees) t on (ms) 8. Typical Temperature Performance T amb = 2 to +7 C Function Typical Change Units Input bias current at V i ±4 pa/ C Total harmonic distortion = 6.V, R L = 32 Ω, P o = 125 mw, f = 1. khz +.3 %/ C Power supply current = 3.V, R L = α, CD = V = 3.V, R L = α, CD = 2.V 2.5.3 µa/ C µa/ C Figure 8-1. Turn-on Time versus and C 2 at Power On 36 3 24 = 5 µf 18 12 1 µf 6 switching from to +6V 2 4 6 8 C 2 (µf) 1 Figure 8-2. Amplifier 1 Open-loop Gain and Phase 1 99.33 8 Phase 92.67 6 86. 4 2 Gain 79.33 72.67.1 1 1 1 66. 1 f (khz) 7

PSRR (db) PSSR (db) PSSR (db) Differential gain (db) Figure 8-3. Differential Gain versus Frequency 4 R f = 15 k 32 24 16 8 R i = 6 k Input R f = 75 k R i = 3 k C i Ri R f.1 µf Amp 1 V O1 Outputs V O2 Amp 2 1 1 1 Frequency (khz) Figure 8-4. Power Supply Rejection versus Frequency C 2 = 1 µf 6 5 4 3 > 1 µf =.1 µf C 2 C= 2 = 1 µf µf 2 = 1.1 1 1 1 f (khz) 1 Figure 8-5. Power Supply Rejection versus Frequency C 2 = 5 µf 6 > 1 µf 5 4 3 CC 1 =.1 µf C 2 = 5 µf 2 = 1.1 1 1 1 f (khz) 8

P (mw) tot PSSR (db) PSSR (db) Figure 8-6. Power Supply Rejection versus Frequency C 2 = 1 µf 6 5 > 5 µf = 1 µf 4 C 2 = 1 µf 3 =.1 µf 2 = 1.1 1 1 1 f (khz) Figure 8-7. Power Supply Rejection versus Frequency C 2 = 55 45 > 5 µf 35 25 = 1 µf C 2 = 15 =.1 µf 5.1 1 1 1 f (khz) Figure 8-8. Device Dissipation R L = 8Ω 12 1 = 12 V R L = 8 Ohm 8 6 6 V 4 2 3 V 3 6 9 12 P L (mw) 15 18 9

d ( % ) P (mw) tot P (mw) tot Figure 8-9. Device Dissipation R L = 16Ω 12 1 = 16 V 12 V 8 RL = 16 Ohm 6 6 V 4 2 3V 1 2 3 P L (mw) 4 Figure 8-1. Device Dissipation R L = 32Ω 12 1 = 16 V 12 V 8 6 R L = 32 Ohm 4 2 3V 6 V 1 2 3 4 5 6 P L (mw) Figure 8-11. Distortion versus Power f = 1 khz, Delta G V = 34 db 1 8 6 = 3 V R L = 16 Ohm = 3V R L = 8 Ohm f = 1 khz Delta-G V = 34 db = 6 V RL = 32 Ohm 4 = 16V 2 R L = 32 Ohm = 6 V R L = 16 W = 12 V RL = 32 Ohm 1 2 3 4 P O (mw) 1

d ( % ) Figure 8-12. Distortion versus Power f = 3 khz, Delta G V = 34 db 1 8 6 = 3 V R L = 16 Ohm = 3 V R L = 8 Ohm f = 3 khz Delta-G V = 34 db = 6 V R L = 32 Ohm d ( % ) 4 2 = 16 V R L = 32 Ohm Limit = 6 V R L = 16 Ohm = 12 V R L = 32 Ohm 1 2 3 4 P O (mw) Figure 8-13. Distortion versus Power f = 1 khz or 3 khz, Delta G V = 12 db 1 8 6 = 3 V R L = 16 Ohm = 3 V R L = 8 Ohm f = 1 or 3 khz Delta-G V = 12 db = 6 V R L = 32 W 4 2 = 16 V = 6 V R L = 32 Ohm Limit R L = 16 Ohm Limit = 12 V R L = 32 Ohm 1 2 3 4 P O = ( mw ) 11

Input 1mV/Div Output 2mV/Div I S (ma) P L (W) L Figure 8-14. Maximum Allowable Load Power 6 5 4 T amb = 25 C - Derate at higher temperature R L = 32 3 2 16 Ohm 1 8 Ohm 4 8 12 16 (V) 2 Figure 8-15. Power-supply Current 5 4 RL = C D = 3 2 1 C D = 4 8 12 16 (V) 2 Figure 8-16. Small Signal Response 2 µs/div 12

V OL (V) -V OH (V ) Input 8mV/Div Output 1V/Div Figure 8-17. Large Signal Response 2µs/Div Figure 8-18. V OH versus Load Current 1.3 1.2 1.1 1. 2V< <16 V.9.8 4 8 12 16 I L (ma) 2 Figure 8-19. V OL versus Load Current 2. 1.6 1.2.8.4 = 2 V = 3 V >6 V 4 8 12 16 2 I L (ma) 13

14 Figure 8-2. Application Circuit Bias circuit 4k 4k 5k 5k 125k 4 3 2 7 1 8 5 6 1nF 1R Amp1 Amp2 1nF 1R.1µF 3k Ci Ri Rf 75k C2 C1 1µF 5µF FC2 FC3 Vi VS VO1 VO2 CD GND C1B C2B R1B R2B

9. Ordering Information Extended Type Number Package Remarks -MFPY SO8, Pb-free Tube -MFPG3Y SO8, Pb-free Taped and reeled 1. Package Information Package SO8 Dimensions in mm 5. 4.85 5.2 4.8 3.7 1.4.4 1.27 3.81.25.1 3.8 6.15 5.85.2 8 5 technical drawings according to DIN specifications 1 4 15

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