Applications Marine radar Satellite communications Point to point communications Military communications Broadband amplifiers High efficiency amplifiers Product Features Functional Block Diagram Frequency Range: DC - 12 GHz 44.5 dbm Nominal PSAT at 3 GHz 71.6% Maximum at 3 GHz 19.6 db Nominal Power at 3 GHz Bias: VD = 32 V, IDQ = 100 ma Technology: TQGaN on SiC Chip Dimensions: 1.01 x 1.68 x 0.10 mm 1-4 5-6 GND General Description The TriQuint TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 is designed using TriQuint s proven TQGaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2954 typically provides 44.5 dbm of saturated output power with power gain of 19.5 db at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Lead-free and RoHS compliant. Pad Configuration Pad No. Symbol 1-4 VG / RF IN 5-6 VD / RF OUT Backside Source / Ground Ordering Information Part ECCN Description TGF2954 3A001b.3.b 27 Watt GaN HEMT Datasheet: Rev A 10--14-1 of 19 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Drain to Gate Voltage (VDG) Value 100 V Drain Voltage (VD) 40 V Gate Voltage Range (VG) -10 to 0 V Drain Current (ID) 3 A Gate Current (IG) -5.04 to 8.4 ma CW Power Dissipation (PD) @ 10GHz 34.5 W CW Input Power (PIN) @ 10GHz 37 dbm Channel Temperature (TCH) 275 C Mounting Temperature ( Sec.) 3 C Storage Temperature 65 to 0 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage Range (VD) 32 V Drain Quiescent Current (IDQ) 100 ma Drain Current Under RF Drive ( ID) (1) 1.7 A Pinch-off Gate Voltage (VG) 3.5 V (Typ.) Channel Temperature (TCH) 2 C (Max.) (1) 10% pulses at 3GHz, Power Tuned Datasheet: Rev A 10--14-2 of 19 - Disclaimer: Subject to change without notice
RF Characterization Model Optimum Power Tune TGF2954 Simulation conditions unless otherwise noted: T = C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes. Parameter Typical Value Units Frequency (F) 1 3 6 10 GHz Drain Voltage (VD) 32 32 32 32 32 V Bias Current (IDQ) 50 50 50 50 50 ma Output P3dB (P3dB) 44.5 44.5 44.5 44.3 44.2 dbm @ P3dB (3dB) 64.5 64.6 57.9 52.1 44.6 % @ P3dB (G3dB) 26.8 19.6 14.6 10.8 7.5 db Parallel Output Resistance (1) (Rp) 95.7 94.3 86.8 67.2 36.5 Ω mm Parallel Output Capacitance (1) (Cp) -0.036 0.168 0.180 0.222 0.263 pf/mm Load Impedance (ZL) 19.0-j0.41 17.2+j5.12 12.8+j7.52 7.09+j6.65 3.98+j3.60 Ω Source Impedance (ZS) 2.49+j18.3 1.31+j6.14 1.05+j2.41 0.96+j0.60 0.92-j0.71 Ω Notes: 1. Large signal equivalent output network (normalized). RF Characterization Model Optimum Efficiency Tune Simulation conditions unless otherwise noted: T = C, Bond wires not included, Pulse: 100uS PW, 10%. See page 17 for reference planes. Parameter Typical Value Units Frequency (F) 1 3 6 10 GHz Drain Voltage (VD) 32 32 32 32 32 V Bias Current (IDQ) 50 50 50 50 50 ma Output P3dB (P3dB) 43.2 43.0 43.0 43.7 43.3 dbm @ P3dB (3dB) 70.4 71.6 65.5 55.5 48.0 % @ P3dB (G3dB) 28.1 21.0.7 11.2 8.4 db Parallel Output Resistance (1) (Rp) 162.4 166.7 1.4 89.8 55.5 Ω mm Parallel Output Capacitance (1) (Cp) 0.285 0.295 0.290 0.275 0.317 pf/mm Load Impedance (ZL) 29.7+j8.65 17.8+j16.5 8.06+j13.3 5.22+j8.11 2.94+j4.87 Ω Source Impedance (ZS) 2.49+j18.3 1.31+j6.14 1.05+j2.41 0.96+j0.60 0.92-j0.71 Ω Notes: 1. Large signal equivalent output network (normalized). Datasheet: Rev A 10--14-3 of 19 - Disclaimer: Subject to change without notice
Thermal and Reliability Information - Pulsed (1) TGF2954 Parameter Test Conditions Value Units Thermal Resistance, θjc 3.94 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 184 C Pulse: 100uS, 5% Median Lifetime, TM 6.84E07 Hrs Thermal Resistance, θjc 4.04 C/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 187 C Pulse: 100uS, 10% Median Lifetime, TM 5.39E07 Hrs Thermal Resistance, θjc 4.26 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 192 C Pulse: 100uS, % Median Lifetime, TM 3.18E07 Hrs Thermal Resistance, θjc 4.93 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 9 C Pulse: 100uS, 50% Median Lifetime, TM 6.99E06 Hrs Notes: 1. Assumes eutectic attach using 1mil thick 80/ AuSn mounted to a 10 mil CuMo Carrier Plate. Thermal and Reliability Information - CW (1) Parameter Test Conditions Value Units Thermal Resistance, θjc 5.16 ºC/W PD = 10.08 W, Tbaseplate = 85 C Channel Temperature, TCH 137 C CW Median Lifetime, TM 1.14E10 Hrs Thermal Resistance, θjc 5.49 C/W PD =.12 W, Tbaseplate = 85 C Channel Temperature, TCH 168 C CW Median Lifetime, TM 3.54E08 Hrs Thermal Resistance, θjc 5.85 ºC/W PD =.16 W, Tbaseplate = 85 C Channel Temperature, TCH 3 C CW Median Lifetime, TM 1.19E07 Hrs Thermal Resistance, θjc 6.27 ºC/W PD =.2 W, Tbaseplate = 85 C Channel Temperature, TCH 243 C CW Median Lifetime, TM 4.43E05 Hrs Notes: 1. Assumes eutectic attach using 1mil thick 80/ AuSn mounted to a 10 mil CuMo Carrier Plate. Datasheet: Rev A 10--14-4 of 19 - Disclaimer: Subject to change without notice
Median LifeTime Median Lifetime, T M (Hours) Median Lifetime vs. Channel Temperature 1E+18 1E+17 1E+16 1E+ 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 1E+04 50 75 100 1 0 175 0 2 0 275 Channel Temperature, T CH ( C) Datasheet: Rev A 10--14-5 of 19 - Disclaimer: Subject to change without notice
Maximum Channel Temperature - Pulsed TGF2954 260.0 Maximum Channel Temperature Carrier Plate Base fixed at 85 o C, Pdiss =.2 W 240.0 Maximum Channel Temperature ( o C) 2.0 0.0 180.0 160.0 5% Duty Cycle 10% Duty Cycle % Duty Cycle 50% Duty Cycle 140.0 1.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse Width (sec) Datasheet: Rev A 10--14-6 of 19 - Disclaimer: Subject to change without notice
Maximum Channel Temperature - CW TGF2954 0 Peak Temperature vs. Pdiss (W) for Fixed 85 C on CuMo Carrier Plate 280 Carrier Plate held at 85C Recommended Operating Limit 260 240 Peak Temperature, C 2 0 180 160 140 1 100 80 5.0 7.0 9.0 11.0 13.0.0 17.0 19.0 21.0 23.0.0 27.0 29.0 31.0 CW Power Dissipation, W Datasheet: Rev A 10--14-7 of 19 - Disclaimer: Subject to change without notice
Model Maximum Performance Bond wires not included. See page 17 for reference planes. 35 Maximum vs. Frequency Vd = 12V, Idq = 100mA Vd = 12V, Idq = 0mA Vd = 32V, Idq = 100mA Vd = 32V, Idq = 0mA [db] 10 5 0 0 5 10 Frequency [GHz] Datasheet: Rev A 10--14-8 of 19 - Disclaimer: Subject to change without notice
Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = 2.49+18.34iΩ Zs(2fo) = 19Ω Zs(3fo) = 19Ω Zl(2fo) = Ω Zl(3fo) = Ω 1GHz, Load-pull Max Power is 44.5dBm at Z = 18.973-0.406iΩ Γ = 0.1171-0.0106i Max is 33.6dB at Z = 10.9+16.37iΩ Γ = 0.1723+0.5231i Max is 70.4% at Z = 29.712+8.651iΩ Γ = 0.3533+0.11i 2 3 32.6 32.1 33.1 64.3 69.3 59.3 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 3 4 5 6 7 8 9 44.4 44.2 44 Zo = Ω Power Datasheet: Rev A 10--14-9 of 19 - Disclaimer: Subject to change without notice
Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = 1.31+6.14iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω 0.5 0.6 24.3 3GHz, Load-pull Max Power is 44.5dBm at Z = 17.21+5.124iΩ Γ = -0.1674+0.1417i Max is 24.5dB at Z = 4.292+14.705iΩ Γ = -0.3633+0.6844i Max is 71.6% at Z = 17.79+16.541iΩ Γ = -0.0166+0.393i 23.8 23.3 70.1 60.1 65.1 44.5 44.3 44.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2 Zo = Ω Power Datasheet: Rev A 10--14-10 of 19 - Disclaimer: Subject to change without notice
Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = 1.05+2.41iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω 0.5 0.6 0.7 6GHz, Load-pull 0.8 0.9 1 1.2 Max Power is 44.5dBm at Z = 12.785+7.518iΩ Γ = -0.2729+0.33i Max is 16.3dB at Z = 3.848+13.185iΩ Γ = -0.4337+0.6553i Max is 65.5% at Z = 8.055+13.7iΩ Γ = -0.3+0.5226i 1.4.2.7 64.1 14.7 59.1 54.1 44.3 44.1 43.9 0.2 Zo = Ω 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 Power 2 Datasheet: Rev A 10--14-11 of 19 - Disclaimer: Subject to change without notice
Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. 10GHz, Load-pull Zs(fo) = 0.96+0.6iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω 0.4 0.5 0.6 Max Power is 44.3dBm at Z = 7.09+6.649iΩ Γ = -0.494+0.95i Max is 11.5dB at Z = 3.889+10.282iΩ Γ = -0.5362+0.5467i Max is 55.5% at Z = 5.224+8.11iΩ Γ = -0.5432+0.4141i 11.2 10.7 51.8 46.8 41.8 10.2 44.2 44 43.8 Power Zo = Ω 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 Datasheet: Rev A 10--14-12 of 19 - Disclaimer: Subject to change without notice
Model Load Pull Contours Vds = 32V, Idq = 100mA. 3dB compression referenced to peak gain. Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes. TGF2954 Zs(fo) = 0.92-0.71iΩ Zs(2fo) = 4.5Ω Zs(3fo) = 4.5Ω Zl(2fo) = Ω Zl(3fo) = Ω 0.4 GHz, Load-pull 0.5 Max Power is 44.2dBm at Z = 3.982+3.6iΩ Γ = -0.699+0.2111i Max is 9.4dB at Z = 2.121+7.138iΩ Γ = -0.7241+0.4538i Max is 48% at Z = 2.942+4.867iΩ Γ = -0.7367+0.i 0.3 8.93 8.43 7.93 43.8 38.8 33.8 44 43.8 43.6 Zo = Ω 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Power 0.8 Datasheet: Rev A 10--14-13 of 19 - Disclaimer: Subject to change without notice
Model Power Tuned Data Bond wires not included. See page 17 for reference planes. [db] 35 34 33 32 31 29 28 27 26 TGF2954 and vs. Output Power 1GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 2.49+j18.3Ω Zl = 19.0-j0.41Ω 34 35 36 37 38 39 40 41 42 43 44 45 70 65 60 55 50 45 40 35 [%] [db] 29 28 27 26 24 23 22 21 TGF2954 and vs. Output Power 3GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 1.31+j6.14Ω Zl = 17.2+j5.12Ω 19 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 10 70 64 58 52 46 40 34 28 22 16 [%] [db] 23 22 21 19 18 17 16 14 TGF2954 and vs. Output Power 6GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 1.05+j2.41Ω Zl = 12.8+j7.52Ω 13 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 10 60 55 50 45 40 35 [%] [db] 19 18 17 16 14 13 12 11 TGF2954 and vs. Output Power 10GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned Zs = 0.96+j0.60Ω Zl = 7.09+j6.65Ω 10 32 33 34 35 36 37 38 39 40 41 42 43 44 45 10 60 55 50 45 40 35 [%] TGF2954 and vs. Output Power GHz, Vds =32V, Idq =100mA, 100uS, 10%, Power Tuned 60 14 55 13 50 12 45 [db] 11 10 9 8 7 Zs = 0.92-j0.71Ω Zl = 3.98+j3.60Ω 40 35 [%] 6 5 32 33 34 35 36 37 38 39 40 41 42 43 44 45 10 Datasheet: Rev A 10--14-14 of 19 - Disclaimer: Subject to change without notice
Model Efficiency Tuned Data Bond wires not included. See page 17 for reference planes. [db] 35 34 33 32 31 29 28 27 26 TGF2954 and vs. Output Power 1GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 2.49+j18.3Ω Zl = 29.7+j8.65Ω 32 33 34 35 36 37 38 39 40 41 42 43 44 80 74 68 62 56 50 44 38 32 26 [%] [db] 29 28 27 26 24 23 22 21 TGF2954 and vs. Output Power 3GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 1.31+j6.14Ω Zl = 17.8+j16.5Ω 32 33 34 35 36 37 38 39 40 41 42 43 44 0 80 72 64 56 48 40 32 24 16 8 [%] [db] 24 23 22 21 19 18 17 16 TGF2954 and vs. Output Power 6GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 1.05+j2.41Ω Zl = 8.06+j13.3Ω 14 32 33 34 35 36 37 38 39 40 41 42 43 44 10 70 64 58 52 46 40 34 28 22 16 [%] [db] 19 18 17 16 14 13 12 11 TGF2954 and vs. Output Power 10GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 0.96+j0.60Ω Zl = 5.22+j8.11Ω 10 32 33 34 35 36 37 38 39 40 41 42 43 44 10 60 55 50 45 40 35 [%] [db] 17 16 14 13 12 11 10 9 8 TGF2954 and vs. Output Power GHz, Vds =32V, Idq =100mA, 100uS, 10%, Efficiency Tuned Zs = 0.92-j0.71Ω Zl = 2.94+j4.87Ω 7 32 33 34 35 36 37 38 39 40 41 42 43 44 45 10 60 55 50 45 40 35 [%] Datasheet: Rev A 10--14 - of 19 - Disclaimer: Subject to change without notice
Mechanical Drawing Bond Pads Pad No. Description Dimensions 1, 2, 3, 4 Gate 0.1 x 0.1 5, 6 Drain 0.0 x 0.546 Die Backside Source / Ground 1.007 x 1.680 1. Units: millimeters 2. Thickness: 0.100 mm 3. Die xy size tolerance: ± 0.050 mm Datasheet: Rev A 10--14-16 of 19 - Disclaimer: Subject to change without notice
Reference Planes Reference Planes Model A model is available for download from Modelithics (at http://www.modelithics.com/mvp/triquint&tab=3) by approved TriQuint customers. The model is compatible with the industry s most popular design software including Agilent ADS and National Instruments/AWR applications. Once on the Modelithics web page, the user will need to register for a free license before being granted the download. Datasheet: Rev A 10--14-17 of 19 - Disclaimer: Subject to change without notice
Assembly Notes Component placement and adhesive attachment assembly notes: Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment (i.e. epoxy) not recommended. Reflow process assembly notes: Use AuSn (80/) solder and limit exposure to temperatures above 0 C to 3-4 minutes, maximum. An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use any kind of flux. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram. Force, time, and ultrasonics are critical bonding parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Disclaimer GaN/SiC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Bias-up Procedure 1. VG set to -5 V. 2. VD set to 32 V. 3. Adjust VG more positive until quiescent ID is 100 ma. 4. Apply RF signal. Bias-down Procedure 1. Turn off RF signal. 2. Turn off VD and wait 1 second to allow drain capacitor dissipation. 3. Turn off VG. Datasheet: Rev A 10--14-18 of 19 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings ESD Rating: TBD Value: TBD Test: TBD Standard: TBD Caution! ESD-Sensitive Device Solderability Compatible with gold/tin (3 C maximum reflow temperature) soldering processes. RoHs Compliance This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: info-sales@triquint.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev A 10--14-19 of 19 - Disclaimer: Subject to change without notice