Series Linear Regulator Controller

Similar documents
Adaptive Power MOSFET Driver 1

Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch

200-mA PSM Step Down Converter with Bypass Capability

Slew Rate Controlled Load Switch

Si9986. Buffered H-Bridge. Vishay Siliconix. RoHS* COMPLIANT DESCRIPTION FEATURES APPLICATIONS

Protected 1-A High-Side Load Switch

1.2 A Slew Rate Controlled Load Switch

Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay

150-mA Ultra Low-Noise LDO Regulator With Error Flag and Discharge Option

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion

Single Channel Linear Controller

Monolithic Dual SPST CMOS Analog Switch

Adaptive Power MOSFET Driver 1

N-Channel 100-V (D-S) 175 C MOSFET

RT9059A. 3A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Ordering Information. Marking Information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

RT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information

Slew Rate Controlled Load Switch

RT A, Ultra-Low Dropout Voltage Regulator. General Description. Features. Applications. Pin Configurations. Ordering Information RT9059(- )

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion

High-Voltage, Non-Isolated Buck-Boost Converter for ISDN Digital Phones

RT9041A/B. 500mA, Low Voltage, LDO Regulator with External Bias Supply. General Description. Features. Applications. Ordering Information

Half-Bridge N-Channel MOSFET Driver With Break-Before-Make

RT2517B. 1A, 6V, Ultra-Low Dropout Linear Regulator. General Description. Features. Applications. Ordering Information. Marking Information

Universal Input Switchmode Controller

Applications. Monitor TV STB Datacom

N-Channel 30-V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

Multi-Output Power-Supply Controller

46 m, Slew Rate Controlled Load Switch in udfn4 1.1 mm x 1.1 mm

N- and P-Channel 2.5-V (G-S) MOSFET

RT A, Ultra Low Dropout LDO. General Description. Features. Applications. Pin Configurations. Ordering Information RT9025-

N-Channel 20 V (D-S) MOSFET

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

P-Channel 30-V (D-S), MOSFET

High Frequency 600-mA Synchronous Buck/Boost Converter

P-Channel 2.5-V (G-S) MOSFET

Single-Stage PFC Buck Current Control LED Driver

PSM Buck Converter with Dynamic Adjustable Output and Bypass Capability

High-Voltage Switchmode Controller

Single-Stage PFC Buck Current Control LED Driver With High Voltage MOSFET Integrated

N-Channel 60-V (D-S) MOSFET

RT9041F. 500mA, Low Voltage, LDO Regulator with External Bias Supply. General Description. Features. Applications. Ordering Information

RT9008 SS. Low Dropout Linear Regulator Controller with Soft-Start. General Description. Features. Ordering Information.

Synchronous Buck Converter Controller

Dual P-Channel 2.5-V (G-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET

RT9041E. 500mA, Low Voltage, LDO Regulator with External Bias Supply. General Description. Features. Applications. Ordering Information RT9041E-

P-Channel 40 V (D-S), 175 C MOSFET

RT A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable. Features. General Description. Applications. Ordering Information

Phase-Cut Dimmable and Active PFC for LED lighting With High Voltage MOSFET Integrated

Single-Stage Buck Current Control LED Driver with High Voltage MOSFET Integrated

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

TS19702 High Power Factor Corrector LED Driver

P-Channel 20-V (D-S) MOSFET with Schottky Diode

RT2517B. 1A, 6V, Ultra-Low Dropout Linear Regulator. Features. General Description. Applications. Ordering Information. Marking Information

Dual N-Channel 30-V (D-S) MOSFET

RT2515A. 2A, Low Input Voltage, Ultra-Low Dropout Linear Regulator with Enable. General Description. Features. Applications

Complementary N- and P-Channel 40-V (D-S) MOSFET

SUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY

3-W High-Voltage Switchmode Regulator

TS3552 2A/350kHz Synchronous Buck DC/DC Converter

P-Channel 8-V (D-S) MOSFET

Power MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024

Dual Output Power Switch

Single-Stage PFC Buck Current Control LED Driver With High Voltage MOSFET Integrated

Low-Voltage Single SPDT Analog Switch

Bi-Directional P-Channel MOSFET/Power Switch

Small 1A, Low-Dropout Linear Regulator in a 2.7mm x 1.6mm Package

Power MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20

P-Channel 100 V (D-S) MOSFET

Power MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

N-Channel 240 -V (D-S) MOSFET

TS2509 3A / 500KHz PWM Buck Converter

Dual N-Channel 30 V (D-S) MOSFET

Complementary 20 V (D-S) MOSFET

TS3410 1A / 1.4MHz Synchronous Buck Converter

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 150-V (D-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

Power MOSFET FEATURES. IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120

CAN Bus Driver and Receiver

Dual N-Channel 30 V (D-S) MOSFET

Power MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N

Dual N-Channel 20-V (D-S) MOSFET

RT μA I Q, 250mA Low-Dropout Linear Regulator. General Description. Features

Ultra Low Leakage and Quiescent Current, 1 A Load Switch with Reverse Blocking

N- and P-Channel 20-V (D-S) MOSFET

RTQ2516-QT. 2A, Low Input Voltage, Ultra-Low Dropout LDO Regulator with Enable. General Description. Features. Applications. Ordering Information

RT9187C. 600mA, Ultra-Low Dropout, CMOS Regulator. General Description. Features. Applications. Ordering Information. Pin Configurations (TOP VIEW)

Not Recommended. TS19702 High Power Factor Corrector LED Driver. Description. Features. Application. Ordering Information

RT9066. Source/Sink DDR Termination Regulator. General Description. Features. Applications. Marking Information. Simplified Application Circuit

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

N-Channel 30-V (D-S) MOSFET with Sense Terminal

Dual N-Channel 30 V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

Power MOSFET FEATURES. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Transcription:

Series Linear Regulator Controller DESCRIPTION SiP21301 is a single channel series regulator controller to drive N-Channel MOSFET. It is the perfect choice for the low voltage, high current application. This controller provides the complete features, such as non-rush current on soft start-up, short circuit protection and thermal shutdown. In addition, it has under-voltage lock-out for safe operation. SiP21301 is designed to maintain regulation while delivering up to 7 A peak current, making it ideal for systems that have a high surge current upon turn-on. SiP21301 provides an adjustable output as well as fixed output voltage options 1.2 V and 1.5 V. SiP21301 is available in a lead (Pb)-free MSOP8 package for operating over temperature range (- 10 C to 100 C). FEATURES Programmable Non Rush Current on Start up (NRCS) Short Circuit Protection (SCP) Thermal Shutdown UVLO and Latch Function Fixed 1.2 V and 1.5 V Output Voltage Options N-Channel MOSFET driver MSOP8 Package APPLICATIONS Game Console Set Top Box RoHS COMPLIANT TYPICAL APPLICATION CIRCUIT V IN Q1 V OUT R2 NRCS/SC U1 V D R2 C IN 10 µf SiP21301 V G V S COUT 220 µf 5 V V CC VFB R1 C NRCS 0.1 µf C VCC 1 µf R1 SiP21301 Adjustable Version Figure 1. 1

V IN Q1 V OUT NRCS/SC U1 V D C IN 10 µf SiP21301 V G V S COUT 220 µf 5 V V CC V FB CNRCS 0.1 µf C VCC 1 µf SiP21301 - Fixed Version Figure 2. ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Supply Input Voltage (V CC ) - 0.3 to 6 Drain Voltage (V D ) - 0.3 to 6 V Enable Input Voltage (V ) - 0.3 to 6 Power Dissipation a (Pd) 666 mw Storage Temperature (T stg ) - 65 to 150 Maximum Junction Temperature 150 C Package Thermal Resistance b (θ JA ) 150 C/W Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 6.6 mw/ C above T A = 25 C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. 2

RECOMMDED OPERATING RANGE Parameter Limit Unit Supply Voltage (V CC ) 4.5 to 5.5 Drain Voltage (V D ) 0.65 to 5.5 Enable Input Voltage (V ) - 0.3 to 5.5 V Capacitor On Terminal (C NRCS ) 0.001 to 1 µf Maximum Output Voltage Range (V O ) 0.65 to 2.5 V Operating Temperature Range (T OPR ) - 10 to 100 C ELECTRICAL SPECIFICATIONS Parameter Symbol Test Conditions V CC = 5 V, V D = V IN = 3.3 V,V = 3 V, R1 = R1' = Ω, R2 = R2' = 0 Ω T A = 25 C. Unless Otherwise Specified Temp Min a Typ b Max a Unit Supply Section Supply Current I CC Room 1.0 1.7 ma Shutdown Supply Current I SD V = 0 V Room 0.1 10 µa Line Regulation ΔV O /ΔV CC V CC = 4.5 V to 5.5 V, I O = 50 ma Room 0.1 0.5 %/V Load Regulation ΔV O /ΔI O I O = 0 A to 3 A Room 0.5 10 mv Adjustable Version Only Feedback Voltage 1 V FB1 I O = 50 ma Room 0.643 0.650 0.657 I Feedback Voltage 2 V O = 50 ma, V CC = 4.5 V to 5.5 V, FB2 Full 0.634 0.650 0.666 T A = - 10 C to 100 C V R1 = R1 = 3.9 kω Output Voltage V O R2 = R2 = 3.3 kω Room 1.2 V FB Input Bias Current I FB Room 80 na Fixed Version Only Feedback Voltage 1 V FB1 I O = 50 ma Room - 1.0 0 1.0 Feedback Voltage 2 V FB2 I O = 50 ma, V CC = 4.5 V to 5.5 V, T A = - 10 C to 100 C Full - 2.5 0 2.5 Enable Section High Level Enable Input Voltage V H Room 2 V Low Level Enable Input Voltage V L Room 0.8 Enable Input Current I V = 3 V Room 7 10 µa Source Section V S Input Bias Current Room 1.2 2.4 V S Stand-by Current Room 150 Output Drive Section (Adjustable Version Only) Driver Source Current I GSO V FB = 0.6 V, V G = 2.5 V Room 2 3 4 Drive Sink Current I GSI V FB = 0.7 V, V G = 2.5 V Room 2 3 4 Output Drive Section (Fixed version Only) Driver Source current I GSO V FB = V O - 0.1 V, V G = 2.5 V Room 2 3 4 Driver Sink Current I GSI V FB = V O + 0.1 V, V G = 2.5 V Room 2 3 4 UVLO Section V CC UVLO V CCUV V CC : Sweep up Room 4.20 4.35 4.50 V V CC UVLO Hysteresis V CCHYS V CC : Sweep down Room 100 160 220 mv V D UVLO V DUV V D : Sweep up Room 0.6 x V O 0.7 x V O 0.8 x V O V % ma ma ma 3

ELECTRICAL SPECIFICATIONS Test Conditions V CC = 5 V, V D = V IN = 3.3 V,V = 3 V, R1 = R1' = Ω, R2 = R2' = 0 Ω T A = 25 C. Parameter Symbol Unless Otherwise Specified Temp Min a Typ b Max a Unit Drain Voltage Sensing Section (Adjustable Version Only) V D Input Bias Current I D Room 0 na Drain Voltage Sensing Section (Fixed Version Only) V D Input Bias Current I D V D = 3.3 V Room 100 200 µa Section NRCS Charge Current NRCS V = 0.5 V Room 14 20 26 SCP Charge Current I SCP V = 0.5 V Room 14 20 26 µa SCP Discharge Current I SCPD V = 0.5 V Room 0.3 ma SCP Threshold Voltage V SCP Room 1.2 1.3 1.4 Short Detect Voltage V OSCP Room V O x 0.3 V O x 0.35 V O x 0.4 V NRCS Stand-by Voltage V NS Room 50 mv Notes: a. The algebraic convention whereby the most negative value is a minimum and most positive is a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PIN CONFIGURATION MSOP8 Package (Top View) NRCS/SC V CC V D V G V S V FB Figure 3. PIN DESCRIPTION Pin Number Name Function 1 Non-rush current on Start-up/Short circuit protection 2 Ground pin 3 By applying less than 0.8 V to this pin, the device will be turned off Connect this pin to V CC if unused 4 V CC Input supply pin 5 V FB - Adjustable version: Connect feedback resistors to program the output voltage for the regulator Feedback input - Fixed version: Connect this pin to V S pin 6 V S Output of regulator. Connect to source of N-channel MOSFET 7 V G Connect to gate of N-Channel MOSFET 8 V D Connect to drain of N-Channel MOSFET 4

ORDERING INFORMATION Part Number Marking Temperature Range Package SiP21301LH-AD-E3 01AD SiP21301LH-12-E3 0112-10 C to 100 C MSOP8 SiP21301LH-15-E3 0115 FUNCTIONAL BLOCK DIAGRAM V CC UVLO Logic + - V D UVLO Logic UVLO 0.455 V Reference Enable - + 0.35 V x V O 0.455 V 0.65 V 0.35 V x V O NRCS 0.65 V TSD SCP UVLO Logic + + - V G V S V FB SCP SCP Thermal Shutdown TSD NRCS NRCS : Adjustable Version Only : Fixed Version Only Figure 4. 5

DETAILED OPERATION DESCRIPTION SiP21301 is the LDO controller for the low voltage, high current application. It consists of enable, device UVLO, LDO UVLO, thermal shutdown, NRCS (None Rush Current Start-up), SCP (LDO Output Short Circuit Protection), reference voltage and error amplifier. ABLE The ABLE block is to generate the enable and disable signal to turn the LDO control block on and off. If the voltage on pin is applied greater than 2.0 V, the control block are enable. If the voltage on pin applied less than 0.8 V, the control block are disabled. pin is an active high pin. When pin actives high, an internal 20 µa current source will charge up the external capacitor with out any delay. Reference Voltage The reference voltage is enabled, when the enable active high signal is applied to the pin. The reference voltage block is composed of a self-biased shunt reference circuit and generates following several references to for the control block: 1. 1.0 V for the NRCS circuit 2. 0.455 V for LDO UVLO circuit 3. 1.3 V for short circuit protection circuit 4. 0.65 V for output regulation 5. 0.35*V O for short circuit detection Thermal Shutdown SiP21301 has a thermal shutdown circuit to protection itself. When the junction temperature is around 175 C, the thermal shutdown function is activated, the output jumps into shutdown mode. Controller UVLO The function of controller UVLO is the under-voltage lockout function for SiP21301 itself. This function block consists of an input detection circuit and UVLO circuit. The input detection circuit senses the voltage on V CC pin to check for the safe operation for the rest of the control block. If the V CC voltage is lower than 3.5 V, this V CC detection circuit will make the output turn off to prevent improper operation of SiP21301. To drive an external N-Channel MOSFET without any charge pump circuit built-in as well as externally, it requires an enough voltage difference between V CC and V O to drive the external power MOSFET properly. The controller UVLO is built-in to ensure proper voltage difference between the gate and source of the external power MOSFET. The V CC need to reach 4.35 V to unlock UVLO. It has 160 mv hysteresis. LDO UVLO The LDO UVLO checks the drain voltage of the external N-Channel MOSFET independently and guarantees the V D voltage from abnormal condition. For fixed output version, the V D pin is typically connected to the input of LDO. If the V D voltage is greater than 0.7 x V O, the LDO UVLO will be unlocked. For adjustable version, an external voltage divider is required to set the UVLO voltage in the input side of LDO. 6 The typical input UVLOthreshold voltage is set to 0.7 x V O. If the V D voltage is greater than 0.455 V, the LDO UVLO will be unlocked. NRCS The NRCS circuit begins initiated when the pin active high and the voltage on pin begins to ramp up because the external capacitor is being charged up by an internal 20 µa constant current source. When controller UVLO and LDO UVLO are released with 75 µs delay, NRCS circuit completed initialization. The voltage on keeps ramping up to 1 V. Once it reaches 1 V, the voltage on starts to discharge to ground for output short circuit protection. The voltage on pin is allowed to recharge up to 1.3 V for short circuit protection after startup. During this start-up period, the voltage on is the positive input of the error amplifier in the driving circuit. SCP The SCP sense function starts to monitor the output voltage of the LDO once the input active high. After the startup, The voltage on pin is allowed to recharge up to 1.3 V for short circuit protection. If the LDO is under the output short circuit condition, which output is lower than 0.35 x V O, The external capacitor will be recharged up to 1.3 V to activate the SCP by an internal 20 µa constant current source. During this recharge period, if the output short circuit condition is maintained until the voltage on reach 1.3 V, the output will be turned of with latch mode. Error Amplifier The error amplifier is a conventional operation Transconductance amplifier (OTA). This OTA has two positive inputs and one negative input. The negative input as a feedback signal to sense the voltage of LDO output. The LDO output feedback voltage on the negative input of OTA will follow the voltage during the start up period. Once the voltage exceed the reference voltage (0.65 V) on another positive input of OTA, the feedback voltage on the negative input of the OTA will follow 0.65 V reference voltage to regulate the output voltage of LDO. Power Reset The output short circuit and input power failure will make SiP21301 go into latch shutdown mode. Toggling the from its high condition to a low condition, and then back to a high condition can reset an output short circuit latch and input power failure condition.

TYPICAL CHARACTERISTICS 0.660 1.25 0.655 V CC = 5 V 1.24 1.23 V CC = 5 V V O = 1.2 V 1.22 (V) V FB 0.650 0.645 (V) V O 1.21 1.20 1.19 1.18 0.640 1.17 1.16 0.635-40 - 15 10 35 60 85 110 135 1.15 4.5 4.7 4.9 5.1 5.3 5.5 Temperature ( C) V CC vs. Temperature V CC (V) V O vs. V CC 1.215 1.210 1.205 1.200 V CC = 5 V V O = 1.2 V 1.55 1.54 1.53 1.52 1.51 V CC = 5 V V O = 1.5 V (V) V O 1.195 1.190 V O (V) 1.50 1.49 1.185 1.180 1.48 1.47 1.46 1.175-40 - 15 10 35 60 85 110 135 Temperature ( C) V O vs. Temperature 1.45 4.5 4.7 4.9 5.1 5.3 5.5 V CC (V) V O vs. V CC 1.515 1.510 1.505 1.500 V CC = 5 V V O = 1.5 V 1.5 1.4 1.3 1.2 (V) 1.495 (ma) 1.1 V O 1.490 I CC 1.0 1.485 0.9 1.480 0.8 1.475 0.7 1.470-40 - 15 10 35 60 85 110 135 0.6-40 - 15 10 35 60 85 110 135 Temperature ( C) V O vs. Temperature Temperature ( C) I CC vs. Temperature 7

TYPICAL CHARACTERISTICS 1.2 100000 1.1 10000 (ma) I CC 1.0 ESR (mω) 1000 100 0.9 10 0.8 4.5 5.0 5.5 6.0 V CC (V) I CC vs. V CC 1 0 1 2 3 4 5 I O (A) Stable Zone (SUD40N02-08) 100000 100000 10000 10000 ESR (mω) 1000 100 ESR (mω) 1000 100 10 10 1 0 1 2 3 4 5 I O (A) Stable Zone (Si4866) 1 0 0.5 1.0 1.5 2.0 2.5 3.0 I O (A) Stable Zone (Si3460DV) 80 70 60 50 db 40 30 20 10 0 10 100 1000 10000 100000 Frequency V O = 1.2 V, Q 1 = SUD40N02 PSRR 8

TYPICAL WAVEFORMS (500 mv/div) V G (500 mv/div) (500 mv/div) 1 V 1.3 V 1 ms/div Pin ABLE Soft Start-Up 2 ms/div Pin ABLE Start-Up with Output Short V D (500 mv/div) V D (500 mv/div) 1 V 1.3 V V D = 0.7 x V O V D = 0.7 x V O 2 ms/div Power-In Soft Start-Up 2 ms/div Power-In Soft Start-Up with Output Short V CC (1 V/div) V CC (1 V/div) V G (500 mv/div) 1 V 1.3 V 1 ms/div V CC Power-In Soft Start-Up 1 ms/div V CC Power-In Soft Start-Up with Output Short 9

TYPICAL WAVEFORMS V O (50 mv/div) V IN = 1.7 V V O = 1.2 V V IN = 1.7 V V O = 1.2 V V O (50 mv/div) I OUT (2 A/div) I OUT (2 A/div) 50 µs/div V CC = 5 V, V IN = V D = 1.7 V, V = 3 V, Rising Edge of Transient Response 20 µs/div V CC = 5 V, V IN = V D = 1.7 V, V = 3 V, Falling Edge of Transient Response V G (500 mv/div) V D (500 mv/div) (500 mv/div) 20 µs/div Active Low Power Down 200 µs/div Input Power Fail V CC (1 V/div) 1.3 V 50 µs/div V CC Power Fail 1 ms/div Output Short Circuit After Start-Up maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?73952. 10

Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 1