Triple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding

Similar documents
Tall Dome Dual Channel Transmissive Optical Sensor with Phototransistor Outputs

Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs

Subminiature Transmissive Optical Sensor with Transistor Output

Subminiature Dual Channel Transmissive Optical Sensor with Phototransistor Outputs

Reflective Optical Sensor with Transistor Output

Transmissive Optical Sensor with Phototransistor Output

Reflective Optical Sensor with Transistor Output

Silicon NPN Phototransistor

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output

Silicon Phototransistor in 0805 Package

Ambient Light Sensor

Silicon PIN Photodiode

Silicon PIN Photodiode

Transmissive Optical Sensor with Phototransistor Output

Transmissive Optical Sensor with Phototransistor Output

Ambient Light Sensor

Ambient Light Sensor in 0805 Package

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

Silicon PIN Photodiode

Silicon PIN Photodiode

Silicon PIN Photodiode

Silicon PIN Photodiode

Ambient Light Sensor

Silicon PIN Photodiode

Silicon PIN Photodiode

Silicon Phototransistor in 0805 Package

Dual Color Emitting Diodes, 660 nm and 940 nm

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Transmissive Optical Sensor with Phototransistor Output

Silicon NPN Phototransistor

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology

Silicon PIN Photodiode

Ambient Light Sensor in 0805 Package

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

Ambient Light Sensor

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

Silicon NPN Phototransistor in, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

Silicon PIN Photodiode

Reflective Optical Sensor with Transistor Output

Silicon NPN Phototransistor

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon NPN Phototransistor

Silicon NPN Phototransistor, RoHS Compliant

Silicon NPN Phototransistor

Matched Pairs of Emitters and Detectors

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

Reflective Optical Sensor with Transistor Output

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH

Reflective Optical Sensor with Transistor Output

Silicon PIN Photodiode

Optocoupler, Phototransistor Output, Quad Channel, Half Pitch Mini-Flat Package

Silicon PIN Photodiode

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

Silicon Phototransistor in 0805 Package

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon PIN Photodiode

Infrared Emitting Diode, 950 nm, GaAs

Silicon PIN Photodiode

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Reflective Optical Sensor with Transistor Output

Ambient Light Sensor

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

Silicon NPN Phototransistor

Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package

Optocoupler, Phototransistor Output, ATEX Certified

High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH

Low Current LED in Ø 5 mm Tinted Diffused Package

Silicon PIN Photodiode

Reflective Optical Sensor with PIN Photodiode Output

Silicon NPN Phototransistor

High Intensity LED in Ø 3 mm Tinted Diffused Package

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon PIN Photodiode, RoHS Compliant

Silicon NPN Phototransistor

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Ambient Light Sensor

Silicon NPN Phototransistor

Silicon NPN Phototransistor, RoHS Compliant

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Silicon PIN Photodiode, RoHS Compliant

Universal LED in Ø 5 mm Tinted Diffused Package

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS

Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package

Optocoupler, Phototransistor Output, Low Input Current

Transcription:

TCUT63X Triple Channel Transmissive Optical Sensor With Phototransistor Outputs for Turn and Push Encoding DESCRIPTION The TCUT63X is a compact transmissive sensor that includes an infrared emitter and three phototransistor detectors, located face-to-face in a surface-mount package. The tall dome design supports an additional transistor and additional mechanical room for vertical signal encoding. FEATURES Package type: surface-mount Detector type: phototransistor Dimensions (L x W x H in mm): 5.5 x 5.85 x 7 AEC-Q qualified Gap (in mm): 3 Aperture (in mm):.3 Typical output current under test: I C =.3 ma Emitter wavelength: 95 nm Lead (Pb)-free soldering released Moisture sensitivity level (MSL): Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Automotive optical sensors Accurate position sensor for encoder Sensor for motion, speed, and direction Sensor for turn and push encoding PRODUCT SUMMARY PART NUMBER GAP WIDTH (mm) APERTURE WIDTH (mm) TYPICAL OUTPUT CURRENT UNDER TEST () (ma) DAYLIGHT BLOCKING FILTER INTEGRATED TCUT63X 3.3.3 No Note () Conditions like in table basic characteristics / coupler ORDERING INFORMATION ORDERING CODE PACKAGING VOLUME () REMARKS TCUT63X Tape and reel MOQ: pcs, pcs/reel Drypack, MSL Note () MOQ: minimum order quantity Rev.., 2-Feb-8 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCUT63X ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Junction temperature T j C Ambient temperature range T amb -4 to +5 C Storage temperature range T stg -4 to +25 C Soldering temperature In accordance with Fig. 7 T sd 26 C INPUT (EMITTER) Reverse voltage V R 5 V Forward current T amb 95 C 25 ma Forward surge current t p μs SM 2 ma Total power dissipation T amb 95 C P V 37.5 mw OUTPUT (DETECTOR) Collector emitter voltage V CEO 2 V Emitter collector voltage V ECO 7 V Collector current I C 2 ma Collector dark current T amb = 85 C, V CE = 5 V I CEO 3.3 μa Total power dissipation T amb 95 C P V 37.5 mw ABSOLUTE MAXIMUM RATINGS 4 3 P V - Power Dissipation (mw) 35 3 25 2 5 5 R thja = 46 K/W - Forward Current (ma) 25 2 5 5 R thja = 46 K/W 2 4 6 8 2 2 4 6 8 2 2246 T amb - Ambient Temperature ( C) 2246 T amb - Ambient Temperature ( C) Fig. - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Rev.., 2-Feb-8 2 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCUT63X ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector current per channel V CE = 5 V, = 5 ma I C.45.3 - ma Collector emitter saturation voltage = 5 ma, I C =.2 ma V CEsat - -.4 V INPUT (EMITTER) Forward voltage = 5 ma V F.2.4 V Reverse current V R = 5 V I R - - μa Junction capacitance V R = V, f = MHz C j - 25 - pf OUTPUT (DETECTOR) Collector emitter voltage I C I C = ma V CEO 2 - - V Emitter collector voltage I E = μa V ECO 7 - - V Collector dark current V CE = 25 V, = A, E = lx I CEO - na SWITCHING CHARACTERISTICS Rise time Fall time I C =.7 ma, V CE = 5 V, R L = Ω (see Fig. 3) I C =.7 ma, V CE = 5 V, R L = Ω (see Fig. 3) t r - 9 5 μs t f - 6 5 μs + 5 V I C adjusted by I C t p t R G = 5 Ω t p T = 2 t p = ms 2688 5 Ω Ω Channel I Channel II Oscilloscope R L MΩ C L 2 pf % 9 % % t p t d t r t on (= t d + t r ) t r t d t on Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t Storage time Fall time Turn-off time 96 698 Fig. 3 - Test Circuit for t r and t f Fig. 4 - Switching Times BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified).4 - Forward Current (ma) V F - Forward Voltage (V).35.3.25.2.5..5.8..2.4.6. -5-25 25 5 75 25 5 V F - Forward Voltage (V) T amb - Ambient Temperature ( C) Fig. 5 - Forward Current vs. Forward Voltage Fig. 6 - Forward Voltage vs. Ambient Temperature Rev.., 2-Feb-8 3 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCUT63X I C - Collector Current (ma). U CE = 5 V I C - Collector Current (ma) 2..5..5 = 5 ma = 5 ma. - Forward Current (ma) -5-25 25 5 75 25 5 T amb - Ambient Temperature ( C) Fig. 7 - Collector Current vs. Forward Current Fig. - Collector Current vs. Ambient Temperature I C - Collector Current (ma). = 25 ma = 5 ma = 5 ma = 3 ma I CEO - Collector Dark Current (na) V CE = 7 V V CE = 25 V V CE = 5 V.. 22682 V CE - Collector Emitter Voltage (V) 22685-5 - 25 25 5 75 25 5 T amb - Ambient Temperature ( C) Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. - Collector Dark Current vs. Ambient Temperature V CEsat - Coll. Emitter Saturation Voltage (V) 22683.3.25.2.5..5 I C = 2 μa = 5 ma = 5 ma -5-25 25 5 75 25 5 T amb - Ambient Tempearture ( C) Fig. 9 - Collector Emitter Saturation Voltage vs. Ambient Temperature t r / t f - Rise / Fall Time (µs) 9 8 7 R L = Ω 6 5 4 t f 3 t r 2 25 5 75 25 5 75 2 2599 I C - Collector Current (µa) Fig. 2 - Rise / Fall Time vs. Collector Current Rev.., 2-Feb-8 4 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

.7.5.4 www.vishay.com TCUT63X I C,rel - Relative Collector Current..9.8.7.6.5.4.3.2 Ch Ch2 Ch3. -.6 -.3.3.6 S h - Horizontal Displacement (mm) Fig. 3 - Relative Collector Current vs. Horizontal Displacement Horizontal Shutter (.25 mm thickness) Shutter Top view channel offset.23.23 Ch Ch2 Ch3 Origin of S h shutter horizontal.5 Fig. 6 - Top View Sensor Channel Positions and Origin of Horizontal Shutter I C,rel - Relative Collector Current..9.8.7.6.5.4.3 Ch Ch3.2 Ch2...5 2. 3. 3.5 4. 4.5 5..77 2.38 2.8 3.42 Shutter Origin of S v shutter vertical.4 2.2 } Ch, Ch3 3.4 } Ch2 3.75 5.86 S V - Vertical Displacement (mm) Fig. 4 - Relative Collector Current vs. Vertical Displacement Vertical Shutter (.25 mm thickness) Fig. 7 - Top View Sensor Channel Positions and Origin of Vertical Shutter = 5 ma + V C = 5 V REFLOW SOLDER PROFILE 3 Axis Title 74HCT4 kω V E U Q 2nd line Temperature ( C) 25 2 5 255 C 24 C 27 C Max. 2 s Max. 26 C 245 C Max. 3 s Max. s Max. ramp down 6 C/s st line 2nd line GND Fig. 5 - Application example 3887 984 5 Max. ramp up 3 C/s 5 5 2 25 3 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-2 Rev.., 2-Feb-8 5 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCUT63X FLOOR LIFE Level, according to JEDEC, J-STD-2. No time limit. PACKAGE DIMENSIONS in millimeters Material cut-outs Not indicated tolerances ±.5 mm.5.5.5.8 Technical drawings according to DIN specification..5.5.9.9.2 3 Optical axes emitter.4.4 7. ±.2 5.8 ±.2.7.3.5.9 5.9 5 Recommended Footprint Top view 5.7.7.7 A n.c. E E2.5 Cath. Col..7 n.c. n.c. n.c. E3.5 Ejector marks Note Do not connect n.c. pins to the circuit R.9 (4 x) 3.7.7 6.8 Drawing No.: 6.54-56.-4 Issue: ; 2.6.26 Rev.., 2-Feb-8 6 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TCUT63X PACKAGE DIMENSIONS in millimeters Volume/reel = pcs Reel-design is representative for different types Unreel direction Ø 33 A Empty leader 4 mm min. (empty trailer 2 mm min.) 6.4 Ø 62 Ø 3 2 22.4 Lable posted here Ø.5 B Ø.5 B-B ( 2 : ).4 A ( 2 : ) Detector dome 4 Emitter dome 8 2 B Drawing-No.: 9.8-533.-4 Issue: ; 29.6.26.75 7.5 6 7.7 Rev.., 2-Feb-8 7 Document Number: 8424 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9