Self-Mixing Amplifier for CW Sensors

Similar documents
Driver Amplifier for 7 Tesla MRI Smart Power Amplifier

Mixer. General Considerations V RF VLO. Noise. nonlinear, R ON

Investigation of a Voltage Probe in Microstrip Technology

1 MHz to 2.7 GHz RF Gain Block AD8354

Feedback Loop Canceller Circuit

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Demo board DC365A Quick Start Guide.

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Mixer Noise. Anuranjan Jha,

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

1 MHz to 2.7 GHz RF Gain Block AD8354

A 3 8 GHz Broadband Low Power Mixer

QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 678A 40MHZ TO 900MHZ DIRECT CONVERSION QUADRATURE DEMODULATOR

Doppler Simulator for 10 GHz Doppler Radar

0.5-4GHz Low Noise Amplifier

Cascadable Silicon Bipolar MMIC Amplifier. Technical Data MSA-0686

0.5-4GHz Low Noise Amplifier

Features = +5V. = +25 C, Vdd 1. = Vdd 2

IF Digitally Controlled Variable-Gain Amplifier

SHF Communication Technologies AG

CMY210. Demonstration Board Documentation / Applications Note (V1.0) Ultra linear General purpose up/down mixer 1. DESCRIPTION

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Exercise 1: RF Stage, Mixer, and IF Filter

Low voltage LNA, mixer and VCO 1GHz

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

High Efficiency Classes of RF Amplifiers

INVENTION DISCLOSURE- ELECTRONICS SUBJECT MATTER IMPEDANCE MATCHING ANTENNA-INTEGRATED HIGH-EFFICIENCY ENERGY HARVESTING CIRCUIT

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

30 MHz to 6 GHz RF/IF Gain Block ADL5544

Schottky diode mixer for 5.8 GHz radar sensor

Case Study: Amp5. Design of a WiMAX Power Amplifier. WiMAX power amplifier. Amplifier topology. Power. Amplifier

BROADBAND DISTRIBUTED AMPLIFIER

INGAAS FAST PIN (RF) AMPLIFIED PHOTODETECTORS

techniques, and gold metalization in the fabrication of this device.

Design Of A Power Amplifier Based On Si-LDMOS For WiMAX At 3.5GHz

Automatic Tracking Filter for DDS Generator

ET Envelope Path from digits to PA

50 MHz to 4.0 GHz RF/IF Gain Block ADL5602

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

C. Mixers. frequencies? limit? specifications? Perhaps the most important component of any receiver is the mixer a non-linear microwave device.

MRF173. The RF MOSFET Line 80W, 175MHz, 28V. M/A-COM Products Released - Rev Product Image

Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications

Features OBSOLETE. DC GHz GHz GHz GHz GHz

HMC478SC70 / 478SC70E v

Selecting the Right Mixer for Your Application Using Yoni -the Advanced Search Engine (AN )

1 MHz to 8 GHz, 70 db Logarithmic Detector/Controller AD8318-EP

1GHz low voltage LNA, mixer and VCO

Termination Insensitive Mixers By Howard Hausman President/CEO, MITEQ, Inc. 100 Davids Drive Hauppauge, NY

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

A GSM Band Low-Power LNA 1. LNA Schematic

GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM0510AE 1

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

30 MHz to 6 GHz RF/IF Gain Block ADL5611

30 MHz to 6 GHz RF/IF Gain Block ADL5611

Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS

HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description

Low-Noise Amplifiers

Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units

915 MHz Power Amplifier. EE172 Final Project. Michael Bella

A Testbench for Analysis of Bias Network Effects in an RF Power Amplifier with DPD. Marius Ubostad and Morten Olavsbråten

A 3 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in 0.18µ CMOS

CHAPTER 3 CMOS LOW NOISE AMPLIFIERS

Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

A 60-GHz Digitally-Controlled Phase Modulator with Phase Error Calibration

Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation

Pin (dbm ) Ceramic Micro-X Gigamite Plastic

PARAMETER CONDITIONS TYPICAL PERFORMANCE Operating Supply Voltage 3.1V to 3.5V Supply Current V CC = 3.3V, LO applied 152mA

30 MHz to 6 GHz RF/IF Gain Block ADL5610

Double-balanced mixer and oscillator

2.Circuits Design 2.1 Proposed balun LNA topology

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B

Features. = +25 C, Vdd 1, 2, 3 = +3V

WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS VCC (IFQ) VCC (RF)

GHz Upconverter/Amplifier. Technical Data HPMX 2006 YYWW HPMX 2006 YYWW HPMX-2006

Introduction to Surface Acoustic Wave (SAW) Devices

TEL: FAX: v.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Broadband Gain & Return Vdd =

Solution: NF=6 db, B=2.1 GHz, SNR min =7dB T=290 k, P in,1db = 10.5 dbm

CA3028A, CA3028B, CA3053 Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz

SmartSpice RF Harmonic Balance Based RF Simulator. Advanced RF Circuit Simulation

The Design of A 125W L-Band GaN Power Amplifier

825MHz to 915MHz, SiGe High-Linearity Active Mixer

Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V

Academic and Research Staff. Prof. P. L. Penfield, Jr. Prof. D. H. Steinbrecher. Graduate Students

Research and Design of Envelope Tracking Amplifier for WLAN g

SHF Communication Technologies AG

Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma

Lecture 15: Introduction to Mixers

Self Calibrated Image Reject Mixer

Millimeter Signal Measurements: Techniques, Solutions and Best Practices

Symbol Parameters/conditions Min. Typ. Max. Units

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114

HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz

HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22

Design and power optimization of CMOS RF blocks operating in the moderate inversion region

Discipline Electro-Technical Calibration Issue Date Certificate Number C-0556 Valid Until Last Amended on - Page 1 of 7

Transcription:

Self-Mixing Amplifier for CW Sensors Master thesis presentation Congying Chen Supervisor: Prof. Dr.-Ing. Klaus Solbach Department of Electrical Engineering and Information Technology Microwave and RF Technology

Contents Motivation 10 MHz Single Stage Amplifier Analysis Design and Measurement of 10 GHz Self-Mixing Amplifier Conclusion Congying Chen 2

Motivation Background Nonlinear Fundamentals Mixer Fundamentals Congying Chen 3

Motivation - Background CW Sensor Traditional transmitter and receiver designs Congying Chen 4

Motivation - Background New concept Congying Chen 5

Motivation Nonlinear Fundamentals Nonlinear network analysis v a out 0 = a = v 0 out + a (0) 1 v in + a 2 v 2 in + a 3 v 3 in + K a 1 = dv dv out in v in =0 a 2 = d 2 v dv out 2 in v in =0 a 3 = d 3 v dv out 3 in v in =0 If vin =V0 cosω0 t, the output voltage is 1 2 3 3 1 2 = (a0 + a 2 V0 ) + (a1 V0 + a3 V0 )cosω 0 t + a 2 V0 cos2ω t +K 2 4 2 vout 0 Congying Chen 6

Motivation Nonlinear Fundamentals Voltage gain (retained to the third order) 1 db-compression Point G = a v 1 + 3 4 a 3 V 2 0 Congying Chen 7

Motivation Mixer Fundamentals Down conversion Conversion Loss Variation of FET Output Conductance f L IF c = f RF - f LO P = 10log P RF IF > 0dB g(t) = g 0 + 2 gncosnωlo t n=1 Congying Chen 8

Motivation Mixer Fundamentals Drain current i(t) = g(t) v = V RF [g RF 0 (t) cosω = V RF RF [g 0 t + 2 g n= 1 cosω n RF t + 2 [cosn(ω RF n= 1 g n + nω cosnω LO LO t cosω ) t + cosn(ω RF RF t] nω LO ) t]] Congying Chen 9

10 MHz Single Stage Amplifier Analysis Simulation Measurement Congying Chen 10

10 MHz Single Stage Amplifier Analysis Simulation Circuit Design Congying Chen 11

10 MHz Single Stage Amplifier Analysis Simulation Amplifier output Conductance G Congying Chen 12

10 MHz Single Stage Amplifier Analysis Simulation Mixer Characteristics Z IF Congying Chen 13

10 MHz Single Stage Amplifier Analysis Simulation Mixer Characteristics Congying Chen 14

10 MHz Single Stage Amplifier Analysis Measurement Methods of Measurement Spectrum Analyzer Oscilloscope P P Z out out IF Pout [dbm] = 10log 1mW u50rms = 50 Ω u 0 = 50 Ω -50 Ω u 50 2 Congying Chen 15

10 MHz Single Stage Amplifier Analysis Measurement Measurement with a Spectrum Analyzer Unit LO, RF and IF signal [dbm] Conversion Loss [db] RF signal IF signal LO signal 0 5 10 15 Conversion Loss IF signal Conversion Loss IF signal Conversion Loss IF signal Conversion Loss -10-34.2 24.2-26.4 16.4-23.2 13.2-21.0 11.0-15 -39.4 24.4-32.2 17.2-28.3 13.3-26.3 11.3-20 -44.9 24.9-37.3 17.3-33.3 13.3-31.3 11.3-25 -47.8 22.8-41..3 16.3-38.2 13.2-36.3 11.3-30 -52.3 22.3-46.7 16.7-43.3 13.3-41.5 11.5-40 - - -53.5 13.5-51.5 11.5 Congying Chen 16

10 MHz Single Stage Amplifier Analysis Measurement Measurement with an Oscilloscope LO Signal [dbm] RF Signal [dbm] -10 Open[mV] 50Ω [mv] Impedance[Ω] Output Power[dBm] 0 9.84 4.52 58.85-33.88 5 22.77 10.90 54.45-26.24 10 31.91 15.51 52.87-23.18 15 40.98 19.95 52.63-20.10 Congying Chen 17

10 MHz Single Stage Amplifier Analysis Measurement Measurement of the Amplifier Output Conductance (RF Input Conductance) Input Power[dBm] v_in[mv] v_out[mv] v_out_50ω [mv] Z[Ω] G[mS] -30 15 332 147 62.98 15.9-25 26 580 258 62.33 16.0-20 49 990 453 59.38 16.8-15 86 1.54 *10^3 707 59 16.9-10 155 2.03 *10^3 1.00 *10^3 51.5 19.4-5 271 2.70 *10^3 1.26 *10^3 57.14 17.5-3 336 2.77 *10^3 1.28 *10^3 58.20 17.2 Congying Chen 18

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Measurement Congying Chen 19

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Transistor Selection & Operating Point Bias network Design Congying Chen 20

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Stability Analysis (1- S K = Δ = S 11 S 11 22 2 - S22 2 S S -S 12 12 S 21 21 2 + Δ < 1 2 ) > 1 Congying Chen 21

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Input and output matching and Overall Amplifier G Congying Chen 22

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Input and output matching and Overall Amplifier Congying Chen 23

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Input and output matching and Overall Amplifier Congying Chen 24

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation Input and output matching and Overall Amplifier Congying Chen 25

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation RF Input Conductance Congying Chen 26

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation 1 db Compression Point Congying Chen 27

Design and Measurement of 10 GHz Self-Mixing Amplifier Design and Simulation IF Signal Congying Chen 28

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Implementation Congying Chen 29

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Measurement of the S Parameters Congying Chen 30

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Measurement of 1 dbm-compression Point Input Power[dBm] -10-8 -6-4 -2 0 2 Output Power[dBm] -0.49 1.51 3.51 5.40 7.17 8.50 9.50 Congying Chen 31

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Measurement of the Mixer Conversion Loss L = 100 mh C 2 = 1.5 μf C 2 > 1 2πf IF Congying Chen 32

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Mixer Products (Spectrum Analyzer) RF Signal [dbm] IF Signal [dbm] LO Signal[dBm] -2 0 2 Conversion Loss[dB] IF Signal [dbm] Conversion Loss[dB] IF Signal [dbm] Conversion Loss[dB] -10-30.79 20.79-27.00 17.00-24.50 14.50-15 -36.99 21.99-32.10 17.10-29.97 14.97-20 -40.51 20.51-38.52 18.52-35.10 15.10-25 -45.70 20.70-43.00 18.00-39.03 14.03 Congying Chen 33

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Mixer Products (Spectrum Analyzer) P RF = -10dBm Congying Chen 34

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Mixer Products (Oscilloscope) without C 2 LO Signal [dbm] RF Signal [dbm] -10 Open[mV] 50Ω[mV] Impedance[Ω] Output Power[dBm] -2 68 40 35.00-23.98 0 98 60 31.66-20.46 2 104 64 31.25-19.89 Congying Chen 35

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Mixer Products (Oscilloscope) with C 2 LO Signal [dbm] RF Signal [dbm] -10 Open[mV] 50Ω [mv] Impedance[Ω] Output Power[dBm] -2 35 20 37.50-30.00 0 52 31 33.87-26.19 2 70 42 33.33-23.55 Congying Chen 36

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Calculation of Impedance in Imagine Part Impedance[Ω] Measured without Impedance[Ω] Measured with Impedance[Ω] of C C2 C2 2 35.00 37.50 13.46 31.66 33.87 12.03 31.25 33.33 11.58 Congying Chen 37

Design and Measurement of 10 GHz Self-Mixing Amplifier Measurement Conversion Loss LO Signal[dBm] Conversion Loss[dB] -2 13.98 0 10.46 2 9.89 Congying Chen 38

Conclusion Larger LO Signal Larger Output Signal Lower Output Impedance The LO Signal depends on 1 db-compression point Feasibility of Self-Mixing Amplifier Congying Chen 39

Thank You for Your Attention