AOWN65/AOWFN65 65V,A NChannel MOSFET General Description The AOWN65/AOWFN65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.by providing low R DS(on), C iss and C rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) % UIS Tested % R g Tested 75V@5 A < Ω Top View TO6 Bottom View Top View TO6F Bottom View D G G D G D S S G D S G D S AOWN65 AOWFN65 Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol AOWN65 AOWFN65 DrainSource Voltage 65 GateSource Voltage Continuous Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G I DM I AR E AR E AS 36 3.4 73 347 Pulsed Drain Current C T C =5 C T C = C Peak diode recovery dv/dt T C =5 C Power Dissipation B Derate above 5 o C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, /8" from case for 5 seconds Thermal Characteristics Parameter Maximum JunctiontoAmbient A,D Maximum Casetosink A Maximum JunctiontoCase V DS V GS dv/dt T J, T STG T L Symbol R θja R θcs R θjc * Drain current limited by maximum junction temperature. I D P D 6. 5 AOWN65 65.5.5 ±3 5 55 to 5 3 * 6.* 8. AOWFN65 65 4.5 S Units V V A A mj mj V/ns W W/ o C C C Units C/W C/W C/W Rev: Nov www.aosmd.com Page of 6
AOWN65 /AOWFN65 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS BV DSS / TJ I DSS DrainSource Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I D =5µA, V GS =V, T J =5 C I D =5µA, V GS =V, T J =5 C ID=5µA, VGS=V V DS =65V, V GS =V V DS =5V, T J =5 C 65 75.75 V/ o C I GSS GateBody leakage current V DS =V, V GS =±3V ± nα V GS(th) Gate Threshold Voltage V DS =5V I D =5µA 3 4 4.5 V R DS(ON) Static DrainSource OnResistance V GS =V, I D =5A.77 Ω g FS Forward Transconductance V DS =4V, I D =5A 3 S V SD Diode Forward Voltage I S =A,V GS =V.73 V I S Maximum BodyDiode Continuous Current A I SM Maximum BodyDiode Pulsed Current 36 A DYNAMIC PARAMETERS C iss Input Capacitance 95 369 645 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 8 8 54 pf C rss Reverse Transfer Capacitance 6 4 pf R g Gate resistance V GS =V, V DS =V, f=mhz.7 3.5 5.5 Ω SWITCHING PARAMETERS Q g Total Gate Charge 7.7 33 nc Q gs Gate Source Charge V GS =V, V DS =5V, I D =A 6 7.4 9 nc Q gd Gate Drain Charge 5.5.3 7 nc t D(on) TurnOn DelayTime 3 ns t r TurnOn Rise Time V GS =V, V DS =35V, I D =A, 6 ns t D(off) TurnOff DelayTime R G =5Ω 74 ns t f TurnOff Fall Time 53 ns t rr Body Diode Reverse Recovery Time I F =A,dI/dt=A/µs,V DS =V 55 3 385 ns Q rr Body Diode Reverse Recovery Charge I F =A,dI/dt=A/µs,V DS =V 4.8 6 7. µc A. The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =5 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =3.4A, V DD =5V, R G =5Ω, Starting T J =5 C V µa THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev: Nov www.aosmd.com Page of 6
AOWN65/AOWFN65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 5 V 6.5V V DS =4V 55 C I D (A) 9 6V I D (A) 5 C 6 V GS =5.5V 3 5 C 5 5 5 3 Fig : OnRegion Characteristics. 4 6 8 V GS (Volts) Figure : Transfer Characteristics.6 3 R DS(ON) (Ω).4...8.6 V GS =V Normalized OnResistance.5.5.5 V GS =V I D =5A.4 4 8 6 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage 5 5 5 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature..E BV DSS (Normalized)..9 I S (A).E.E.E.E..E3 5 C 5 C.E4.8 5 5 5 T J ( o C) Figure 5: Break Down vs. Junction Temperature.E5...4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev: Nov www.aosmd.com Page 3 of 6
AOWN65/AOWFN65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V DS =5V I D =A C iss V GS (Volts) 9 6 Capacitance (pf) C oss 3 C rss 5 5 5 3 35 4 Q g (nc) Figure 7: GateCharge Characteristics. Figure 8: Capacitance Characteristics I D (Amps).. R DS(ON) limited T J(Max) =5 C T C =5 C DC µs µs ms ms Figure 9: Maximum Forward Biased Safe Operating Figure : Maximum Forward Biased Safe Area for AOWN65 (Note F) Operating Area for AOWFN65 (Note F) I D (Amps).. R DS(ON) limited T J(Max) =5 C T C =5 C DC µs µs ms ms.s s Current rating I D (A) 8 6 4 5 5 75 5 5 T CASE ( C) Figure : Current Derating (Note B) Rev: Nov www.aosmd.com Page 4 of 6
AOWN65/AOWFN65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T c P DM.Z θjc.r θjc R θjc =.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse P D T on T...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance for AOWN65 (Note F) Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T c P DM.Z θjc.r θjc R θjc =4.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.,., single pulse..... Pulse Width (s) Figure 3: Normalized Maximum Transient Thermal Impedance for AOWFN65 (Note F) P D T on T Rev: Nov www.aosmd.com Page 5 of 6
AOWN65/AOWFN65 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms Rg 9% % t d(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev: Nov www.aosmd.com Page 6 of 6