TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP5/6/7 High DC Current Gain : h FE =0 @ CE =4, I C =A(Min.) Low Collector-Emitter Saturation oltage Industrial Use Absolute Maximum Ratings* T a = 5 C unless otherwise noted November 008 Symbol Parameter Ratings Units CBO Collector-Base oltage : TIP0 : TIP : TIP CEO TO-0.Base.Collector 3.Emitter Collector-Emitter oltage : TIP0 : TIP : TIP EBO Emitter-Base oltage 5 I C Collector Current (DC) A I CP Collector Current (Pulse) 4 A Base Current (DC) 50 P C Collector Dissipation (T a =5 C) W Collector Dissipation (T C =5 C) 50 W T J Junction Temperature 50 C T STG Storage Temperature - 65 ~ 50 C B Equivalent Circuit R R @ 0kW R @ 0.6kW R C E TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. TIP0/TIP/TIP Rev..0.0
Electrical Characteristics* T a =5 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units CEO (sus) Collector-Emitter Sustaining oltage : TIP0 : TIP : TIP I CEO Collector Cut-off Current : TIP0 : TIP : TIP I CBO Collector Cut-off Current : TIP0 : TIP : TIP * Pulse Test: Pulse Width 300ms, Duty Cycle % I C = 30, = 0 CE = 30, = 0 CE = 40, = 0 CE = 50, = 0 CB =, I E = 0 CB =, I E = 0 CB =, I E = 0 I EBO Emitter Cut-off Current BE = 5, I C = 0 h FE DC Current Gain CE = 4, I C = A CE = 4, I C = A CE (sat) Collector-Emitter Saturation oltage I C = A, = 8.5 BE (on) Base-Emitter On oltage CE = 4, I C = A.8 C ob Output Capacitance CB = 0, I E = 0, f = 0.MHz 0 500 pf TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor TIP0/TIP/TIP Rev..0.0
Typical Characteristics BE(sat), CE(sat)[], SATURATION OLTAGE I C [A], COLLECTOR CURRENT.0.8.6.4..0 0.8 0.6 0.4 0. 0.0 0 3 4 5 0 = 500 = 450 = 400 = 350 = 300 Figure. Static Characteristic = 50 = 00 = 50 CE [], COLLECTOR-EMITTER OLTAGE BE(sat) CE(sat) IC = 500 IB 0. 0.0 0. 0 hfe, DC CURRENT GAIN Cob[pF], CAPACITANCE 00 0 0 0.0 0. 0 0 0 Figure. DC current Gain CE = 4 f = 0. MHz 0.0 0. 0 TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor CB[], COLLECTOR-BASE OLTAGE Figure 3. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage Figure 4. Collector Output Capacitance 0 70 DC TIP 0 TIP 5mS ms PC[W], POWER DISSIPATION 50 40 30 0 0 TIP 0. 0 0 0 5 50 75 5 50 75 CE[], COLLECTOR-EMITTER OLTAGE TC[ o C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating TIP0/TIP/TIP Rev..0.0 3
Mechanical Dimensions TO0 TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor TIP0/TIP/TIP Rev..0.0 4
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