N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES TrenchFET Power MOSFET 1 % R g and UIS Tested Material categorization: For definitions of compliance please see /doc?99912 APPLICATIONS Primary Side Switching Synchronous Rectification DC/DC Converters Boost Converters DC/AC Inverters G D 4 G 3 S 2 S 1 Bottom View S Ordering Information: SiJ462DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 6 V Gate-Source Voltage V GS ± 2 T C = 25 C 46.5 T Continuous Drain Current (T J = 15 C) C = 7 C 37.2 I D T A = 25 C 18.6 b, c T A = 7 C 14.9 b, c A Pulsed Drain Current (t = 1 µs) I DM 1 T C = 25 C Continuous Source-Drain Diode Current I 28.3 S T A = 25 C 4.5 b, c Single Pulse Avalanche Current I AS 2 L =.1 mh Single Pulse Avalanche Energy E AS 2 mj T C = 25 C 31.2 T Maximum Power Dissipation C = 7 C 2 P D W T A = 25 C 5 b, c T A = 7 C 3.2 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 15 C Soldering Recommendations (Peak Temperature) d, e 26 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a, b t 1 s R thja 2 25 C/W Maximum Junction-to-Case (Drain) Steady State R thjc 3 4 Notes: a. Maximum under steady state conditions is 7 C/W. b.surface mounted on 1" x 1" FR4 board. c. t = 1 s. d. See solder profile (/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. 1 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µa 6 V V DS Temperature Coefficient V DS /T J 97 I D = 25 µa V GS(th) Temperature Coefficient V GS(th) /T J - 5.1 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa 1.4 2.5 V Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V ± 1 na V DS = 6 V, V GS = V 1 Zero Gate Voltage Drain Current I DSS V DS = 6 V, V GS = V, T J = 55 C 1 µa On-State Drain Current a I D(on) V DS 5 V, V GS = 1 V 3 A V GS = 1 V, I D = 2 A.65.8 Drain-Source On-State Resistance a R DS(on) V GS = 6 V, I D = 15 A.8.1 V GS = 4.5 V, I D = 1 A.1.125 Forward Transconductance a g fs V DS = 1 V, I D = 2 A 8 S Dynamic b Input Capacitance C iss V DS = 3 V, V GS = V, f = 1 MHz 14 Output Capacitance C oss 525 Reverse Transfer Capacitance C rss 45 Total Gate Charge Q g V DS = 3 V, V GS = 6 V, I D = 1 A 12.1 18.5 V DS = 3 V, V GS = 1 V, I D = 1 A 2.8 32 9.3 14 Gate-Source Charge Q gs V DS = 3 V, V GS = 4.5 V, I D = 1 A 4.1 nc Gate-Drain Charge Q gd 2.3 Output Charge Q oss V DS = 3 V, V GS = V 23.5 36 Gate Resistance R g f = 1 MHz.8 2.3 3.7 Turn-On Delay Time t d(on) 1 2 Rise Time t r V DD = 3 V, R L = 3 1 2 Turn-Off Delay Time t d(off) I D 1 A, V GEN = 1 V, R g = 1 24 48 Fall Time t f 8 16 Turn-On Delay Time t d(on) 25 5 ns Rise Time t r V DD = 3 V, R L = 3 5 1 Turn-Off Delay Time t d(off) I D 1 A, V GEN = 4.5 V, R g = 1 17 34 Fall Time t f 9 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 C 28.3 Pulse Diode Forward Current (t p = 1 µs) I SM 1 A Body Diode Voltage V SD I S = 5 A.77 1.1 V Body Diode Reverse Recovery Time t rr 25 5 ns Body Diode Reverse Recovery Charge Q rr 16 32 nc I F = 1 A, di/dt = 1 A/µs, T J = 25 C Reverse Recovery Fall Time t a 14 ns Reverse Recovery Rise Time t b 11 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. pf Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 8 V GS = 1 V thru 5 V V GS = 4 V 1 8 I D - Drain Current (A) 6 4 I D - Drain Current (A) 6 4 T C = 25 C 2 V GS = 3 V 2 T C = 125 C V GS = 2 V..5 1. 1.5 2. 2.5 V DS - Drain-to-Source Voltage (V) Output Characteristics T C = - 55 C. 1.4 2.8 4.2 5.6 7. V GS - Gate-to-Source Voltage (V) Transfer Characteristics.2 16.17 128 C iss R DS(on) - On-Resistance (Ω).14.11.8 V GS = 4.5 V V GS = 6. V V GS = 1 V C - Capacitance (pf) 96 64 32 C rss C oss.5 2 4 6 8 1 I D - Drain Current (A) On-Resistance vs. Drain Current 12 24 36 48 6 V DS - Drain-to-Source Voltage (V) Capacitance V GS - Gate-to-Source Voltage (V) 1 8 6 4 2 I D = 1 A V DS = 2 V V DS = 3 V V DS = 4 V R DS(on) - On-Resistance (Normalized) 2. 1.7 1.4 1.1.8 I D = 2 A V GS = 1 V V GS = 4.5 V 5 1 15 2 25 Q g - Total Gate Charge (nc) Gate Charge.5-5 - 25 25 5 75 1 125 15 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1.5 I S - Source Current (A) 1 1.1.1 T J = 15 C T J = 25 C R DS(on) - On-Resistance (Ω).4.3.2.1 T J = 25 C I D = 2 A T J = 125 C.1..2.4.6.8 1. 1.2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. 2 4 6 8 1 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.5 5.2 4 V GS(th) - Variance (V) -.1 -.4 I D = 5 ma Power (W) 3 2 -.7 I D = 25 μa 1-1. - 5-25 25 5 75 1 125 15 T J - Temperature ( C) Threshold Voltage.1.1.1 1 1 Time (s) Single Pulse Power, Junction-to-Ambient 1 I DM Limited I D - Drain Current (A) 1 1 1 I D Limited Limited by R DS(on) * 1 μs 1 ms 1 ms 1 ms 1 s.1 T A = 25 C 1 s Single Pulse DC BVDSS Limited.1.1.1 1 1 1 V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 55 44 I D - Drain Current (A) 33 22 11 25 5 75 1 125 15 T C - Case Temperature ( C) Current Derating* 4 2.5 32 2. Power (W) 24 16 Power (W) 1.5 1. 8.5 25 5 75 1 125 15. 25 5 75 1 125 15 T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P D is based on T J(max.) = 15 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance.1 Duty Cycle =.5.2.1.5.2 Single Pulse.1.1.1.1.1 1 1 1 1 Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t 1 t 2 t 1 1. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 7 C/W 3. T JM -T A =P DM Z (t) thja 4. Surface Mounted 1 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.1.2.1.5.2 Single Pulse.1.1.1.1.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?62871. 6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
Package Information PowerPAK SO-8L Case Outline Revision: 27-Aug-12 1 Document Number: 693 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
Package Information DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1. 1.7 1.14.39.42.45 A1. -.127. -.5 b.33.41.48.13.16.19 b1.44.51.58.17.2.23 b2 4.8 4.9 5..189.193.197 b3.94.4 b4.47.19 c.2.25.3.8.1.12 D 5. 5.13 5.25.197.22.27 D1 4.8 4.9 5..189.193.197 D2 3.86 3.96 4.6.152.156.16 D3 1.63 1.73 1.83.64.68.72 e 1.27 BSC.5 BSC E 6.5 6.15 6.25.238.242.246 E1 4.27 4.37 4.47.168.172.176 E2 (for Al product) 2.75 2.85 2.95.18.112.116 E2 (for other product) 3.18 3.28 3.38.125.129.133 F - -.15 - -.6 L.62.72.82.24.28.32 L1.92 1.7 1.22.36.42.48 K.51.2 W.23.9 W1.41.16 W2 2.82.111 W3 2.96.117-1 - 1 ECN: C12-26-Rev. B, 27-Aug-12 DWG: 5976 Note Millimeters will gover Revision: 27-Aug-12 2 Document Number: 693 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
PAD Pattern RECOMMENDED MINIMUM PAD FOR PowerPAK SO-8L SINGLE 5. (.197) 3.63 (.143) 4.61 (.16).51 (.2) 2.31 (.91) 8.25 (.325) 6.25 (.246).595 (.23).61 (.24).71 (.28).41 (.16) 2.715 (.17).86 (.34) 1.291 (.51).82 (.32) 1.95 (.75) 1.27 (.5) 7.25 (.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 7-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91
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