NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (.5V V). Applications Power management Load switch Battery protection Features 3. A, V. R DS(ON) = 5 mω @ V GS = V R DS(ON) = mω @ V GS =.5 V Low gate charge Fast switching speed High performance trench technology for extremely low R DS(ON) High power and current handling capability SO- D D D D D Pin SO- S S S G 5 7 3 Absolute Maximum Ratings TA=5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note a) 3. A Pulsed Maximum Power Dissipation (Note a).5 W P D (Note b). (Note c). T J, T STG Operating and Storage Junction Temperature Range 55 to +75 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W (Note c) 5 R θjc Thermal Resistance, Junction-to-Case (Note ) 5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS97 NDS97 3 mm 5 units Fairchild Semiconductor Corporation NDS97 Rev B(W)
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 5 µa V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 5 µa, Referenced to 5 C 5 mv/ C I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V µa V DS = V, V GS = V, T J = 55 C I GSSF Gate Body Leakage, Forward V GS = V, V DS = V na I GSSR Gate Body Leakage, Reverse V GS = V, V DS = V na NDS97 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa. 3 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 5 µa, Referenced to 5 C mv/ C R DS(on) Static Drain Source V GS = V, I D = 3. A 7 5 mω On Resistance V GS =.5 V, I D =. A 99 V GS= V, I D = 3. A, T J =5 C 5 I D(on) On State Drain Current V GS = V, V DS = 5 V A g FS Forward Transconductance V DS = 5 V, I D = 3. A S Dynamic Characteristics C iss Input Capacitance V DS = 3 V, V GS = V, 73 pf C oss Output Capacitance f =. MHz pf Reverse Transfer Capacitance 3 pf C rss Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 3 V, I D = A, ns t r Turn On Rise Time V GS = V, R GEN = Ω ns t d(off) Turn Off Delay Time ns t f Turn Off Fall Time ns t rr Diode Reverse Recovery Time I F = 3. A, ns Q rr Diode Reverse Recovery Charge d if/d t = A/µs nc Q g Total Gate Charge V DS = 3 V, I D = 3. A, nc Q gs Gate Source Charge V GS = V. nc Gate Drain Charge 3.3 nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current. A Drain Source Diode Forward V SD V Voltage GS = V, I S =. A (Note ).. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a in pad of oz copper b) 5 C/W when mounted on a. in pad of oz copper c) 5 C/W when mounted on a minimum pad. Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, Duty Cycle <.% NDS97 Rev B(W)
Typical Characteristics V GS = -V -.V -.5V -.V -3.5V -3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE...... V GS =-3.V -3.5V -.V -.5V -.V -V NDS97 3 5 -V DS, DRAIN TO SOURCE VOLTAGE (V). Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage...3 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.... I D = -3A V GS = -V R DS(ON), ON-RESISTANCE (OHM).5..5. T A = 5 o C T A = 5 o C I D = -.5A. -5-5 5 5 75 5 5 75 T J, JUNCTION TEMPERATURE ( o C).5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. -I D, DRAIN CURRENT (A) V DS = -V T A = -55 o C 5 o C 5 o C -I S, REVERSE DRAIN CURRENT (A)... V GS =V T A = 5 o C 5 o C -55 o C.5.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V)...... -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure. Body Diode Forward Voltage Variation with Source Current and Temperature. NDS97 Rev B(W)
Typical Characteristics NDS97 -V GS, GATE-SOURCE VOLTAGE (V) I D = -3A V DS = -V -3V -V CAPACITANCE (pf) C OSS C ISS f = MHz V GS = V Q g, GATE CHARGE (nc) C RSS 3 5 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics... R DS(ON) LIMIT V GS = -V R θja = 5 o C/W T A = 5 o C µs ms ms ms s s DC. -V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 5 3... t, TIME (sec) R θja = 5 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =.5...5.. R θja (t) = r(t) * R θja R θja = 5 o C/W T J - T A = P * R θja (t) Duty Cycle, D = t / t..... P(pk) t t t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. NDS97 Rev B(W)
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein: Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power7 PowerTrench QFET QS A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Datasheet Identification Product Status Definition â QT Optoelectronics Quiet Series SILENT SWITCHER â SMART START SPM STAR*POWER Stealth SuperSOT -3 SuperSOT - SuperSOT - SyncFET TinyLogic TruTranslation UHC UltraFET â VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev H5