DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 21 Jan 18
FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PINNING SOT23 PIN 1 base 2 emitter 3 collector DESCRIPTION APPLICATIONS Communication and instrumentation systems. 3 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 2 Top view MSB3 Marking code: LBp Fig.1 Simplified outline (SOT23). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C re feedback capacitance I C =; V CB =6V; f=1mhz.3 pf f T transition frequency I C =15mA; V CE =6V; f m =1GHz 7 9 GHz G UM maximum unilateral power gain I C =15mA; V CE =6V; 16 db T amb =25 C; f = 1 GHz NF noise figure Γ S = Γ opt ; I C =5mA; V CE =6V; 1.5 2.5 db f=1ghz P tot total power dissipation T s =6 C; note 1 36 mw R th j-s thermal resistance from junction to soldering point 32 K/W Note 1. T s is the temperature at the soldering point of the collector pin. 21 Jan 18 2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 1 V V EBO emitter-base voltage open collector 1.5 V I C collector current (DC) 5 ma I C(AV) average collector current 5 ma P tot total power dissipation T s =6 C; note 1 36 mw T stg storage temperature 65 +15 C T j junction temperature 15 C Note 1. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 32 K/W 21 Jan 18 3
CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V (BR)CBO collector-base breakdown voltage I C =1µA; I E = 2 V V (BR)CEO collector-emitter breakdown I C =1µA; I B = 1 V voltage V (BR)EBO emitter-base breakdown voltage I E =1µA; I C = 1.5 V V BEF forward base-emitter voltage I E =25mA 1.5 V I CBO collector-base leakage current V CB =1V; I E = 1 na I EBO emitter-base leakage current V EB =1V; I C = 1 na h FE DC current gain I C =5mA; V CE = 6 V 1 15 2 I C =15mA; V CE =6V 15 AC characteristics C re feedback capacitance I C =; V CB =6V; f=1mhz.3 pf f T transition frequency I C =15mA; V CE =6V; f m =1GHz 7 9 GHz s 21 2 insertion gain I C =15mA; V CE = 6 V; f = 1 GHz 13 15 db G UM maximum unilateral power gain; note 1 I C =15mA; V CE =6V; T amb =25 C; f = 1 GHz I C =15mA; V CE =6V; T amb =25 C; f = 2 GHz NF noise figure Γ S = Γ opt ; I C =5mA; V CE =6V; f=1ghz Γ S = Γ opt ; I C =5mA; V CE =6V; f=2ghz 16 db 1 db 1.5 2.5 db 2.1 db Note 1. G UM is the maximum unilateral power gain, assuming s 12 is zero. G UM = 1 s 21 2 log ------------------------------------------------------- ( 1 s 2 11 )( 1 s 2 22 ) db 21 Jan 18 4
4 P tot (mw) MDA871 16 h FE MCD974 3 12 2 7 1 4 5 1 15 2 T s ( C) 1 2 3 4 5 I C (ma) V CE =6V. Fig.2 Power derating as a function of soldering point temperature. Fig.3 DC current gain as a function of collector current; typical values..5 C re (pf).4 MGS498 1 f T (GHz) 8 MCD975.3 6.2 4.1 2 4 8 12 V CB (V) 1 2 3 4 5 I C (ma) I C =I c =; f=1mhz. V CE =6V; f m =1GHz; T amb =25 C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. 21 Jan 18 5
2 gain (db) 16 MSG G UM G max MGS5 5 gain (db) 4 G UM MGS51 12 3 8 2 MSG 4 1 G max 1 2 3 4 I C (ma) 1 2 1 3 f (MHz) 1 4 f=1ghz; V CE =6V. G UM = maximum unilateral power gain. MSG = maximum stable gain. G max = maximum available gain. I C =5mA; V CE =6V. G UM = maximum unilateral power gain. MSG = maximum stable gain. G max = maximum available gain. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of frequency; typical values. 5 gain (db) MGR52 5 gain (db) MGS53 4 G UM 4 3 MSG 3 MSG 2 2 G UM G max 1 G max 1 1 2 1 3 f (MHz) 1 4 1 2 1 3 f (MHz) 1 4 I C =15mA; V CE =6V. G UM = maximum unilateral power gain. MSG = maximum stable gain. G max = maximum available gain. I C =3 ma; V CE =6V. G UM = maximum unilateral power gain. MSG = maximum stable gain. G max = maximum available gain. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 21 Jan 18 6
4 NF (db) MGS54 4 NF (db) (1) MGS55 3 3 (2) (1) 2 (2) (3) 2 (3) 1 (4) (5) (6) 1 1 1 1 1 I C (ma) 1 2 1 2 1 3 f (MHz) 1 4 V CE =6V. (1) f = 2 GHz. (2) f = 1.5 GHz. (3) f = 1 GHz. (4) f = 9 MHz. (5) f = 8 MHz. (6) f = 5 MHz. V CE =6V. (1) I C =3mA. (2) I C =15mA. (3) I C =5mA. Fig.1 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 21 Jan 18 7
handbook, full pagewidth unstable region source 9 +1 unstable region load 1. 135 +.5 +2 45.8.6 18 +.2 (1) (2) Γopt.5 1 2 (4) 5 +5.4.2 f=1ghz; V CE =6V; I C =5mA; Z o =5Ω. (1) G = 17 db. (2) G = 16 db. (3) G = 15 db. (4) NF = 1.6 db. (5) NF = 1.8 db. (6) NF = 2 db..2 135.5 (3) 1 9 (6) (5) 2 5 45 MGS56 1. Fig.12 Common emitter available gain, noise and stability circles; typical values. handbook, full pagewidth unstable region source 135 +.5 9 +1 +2 unstable region load 45 1..8.6 +.2 Γopt +5.4.2 18 (1).2.5 1 2 5 (5) (6) f=2ghz; V CE =6V; I C =5mA; Z o =5Ω. (1) G max =1.9dB. (2) G = 1 db. (3) G = 9 db. (4) G = 8 db. (5) NF = 2.1 db. (6) NF = 2.3 db. (7) NF = 2.5 db..2 135 (2) (3) (4).5 (7) 1 9 2 5 45 MGS57 1. Fig.13 Common emitter available gain, noise and stability circles; typical values. 21 Jan 18 8
handbook, full pagewidth 9 +1 1. 135 +.5 +2 45.8.6 +.2 +5.4 3 GHz.2 18.2.5 1 2 GHz 2 5 1 GHz.2 5 MHz 1 MHz 5 2 MHz 135.5 2 45 V CE =6V; I C =15mA; Z o =5Ω. 1 9 MGS58 1. Fig.14 Common emitter input reflection coefficient (s 11 ); typical values. handbook, full pagewidth 9 135 45 1 MHz 2 MHz 18 5 4 3 2 1 5 MHz 1 GHz 2 GHz 3 GHz 135 45 V CE =6V; I C =15mA. 9 MGS59 Fig.15 Common emitter forward transmission coefficient (s 21 ); typical values. 21 Jan 18 9
handbook, full pagewidth 9 135 45 3 GHz 18.5.4.3.2.1 2 GHz 1 GHz 5 MHz 2 MHz 1 MHz 135 45 V CE =6V; I C =15mA. 9 MGS51 Fig.16 Common emitter reverse transmission coefficient (s 12 ); typical values. handbook, full pagewidth 9 +1 1. 135 +.5 +2 45.8.6 +.2 +5.4.2 18.2.5 1 2 5.2 1 GHz 2 GHz 3 GHz 5 MHz 2 MHz 5 1 MHz 135.5 2 45 V CE =6V; I C =15mA; Z o =5Ω. 1 9 MGS511 1. Fig.17 Common emitter output reflection coefficient (s 22 ); typical values. 21 Jan 18 1
PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 1 1 2 c e 1 b p w M B L p e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. 1.1 mm.1.9 b p c D E e e 1 H E L p Q v w.48.38.15.9 3. 2.8 1.4 1.2 1.9.95 2.5 2.1.45.15.55.45.2.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE 97-2-28 99-9-13 21 Jan 18 11
DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 21 Jan 18 12
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