NTGS, NVGS Power MOSFET., Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package These Devices are PbFree and are RoHS Compliant NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable Applications Power Management in Portable and BatteryPowered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards. AMPERES VOLTS R DS(on) = 5 m PChannel 5 MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS Volts GatetoSource Voltage Continuous V GS Volts Thermal Resistance JunctiontoAmbient (Note ) Total Power Dissipation @ T A = 5 C Drain Current Continuous @ T A = 5 C Pulsed Drain Current (T p S) Thermal Resistance JunctiontoAmbient (Note ) Total Power Dissipation @ T A = 5 C Drain Current Continuous @ T A = 5 C Pulsed Drain Current (T p S) Thermal Resistance JunctiontoAmbient (Note ) Total Power Dissipation @ T A = 5 C Drain Current Continuous @ T A = 5 C Pulsed Drain Current (T p S) R JA P d I D I DM R JA P d I D I DM R JA P d I D I DM.5....5.. Operating and Storage Temperature Range T J, T stg 55 to 5 Maximum Lead Temperature for Soldering Purposes for Seconds C/W Watts C/W Watts C/W Watts C T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Minimum FR or G PCB, operating to steady state.. Mounted onto a in square FR board ( in sq, oz. Cu.. thick single sided), operating to steady state.. Mounted onto a in square FR board ( in sq, oz. Cu.. thick single sided), t 5. seconds. TSOP CASE G STYLE ORDERING INFORMATION Device Package Shipping NTGSTG NVGSTG MARKING DIAGRAM & PIN ASSIGNMENT = Specific Device Code M = Date Code* = PbFree Package TSOP (PbFree) TSOP (PbFree) Drain Drain 5 Drain M Drain Source Gate (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. Semiconductor Components Industries, LLC, December, Rev. 5 Publication Order Number: NTGST/D
NTGS, NVGS ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) (Notes & 5) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = Vdc, I D = A) Zero Gate Voltage Drain Current (V GS = Vdc, V DS = Vdc, ) (V GS = Vdc, V DS = Vdc, T J = 7 C) GateBody Leakage Current (V GS = Vdc, V DS = Vdc) GateBody Leakage Current (V GS = + Vdc, V DS = Vdc) ON CHARACTERISTICS Gate Threshold Voltage (V DS = V GS, I D = 5 Adc) Static DrainSource OnState Resistance (V GS =.5 Vdc, I D =. Adc) (V GS =.7 Vdc, I D =.7 Adc) (V GS =.5 Vdc, I D =.5 Adc) Forward Transconductance (V DS = Vdc, I D =. Adc) V (BR)DSS I DSS. 5. I GSS I GSS V GS(th)..95.5 R DS(on).5..9.5.9. g FS. Vdc Adc nadc nadc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 55 pf Output Capacitance (V DS = 5. Vdc, V GS = Vdc, f =. MHz) C oss pf Reverse Transfer Capacitance C rss pf SWITCHING CHARACTERISTICS TurnOn Delay Time t d(on) 5 ns Rise Time (V DD = Vdc, I D =. Adc, t r 5 ns TurnOff Delay Time V GS =.5 Vdc, R g =. ) t d(off) 5 ns Fall Time t f 5 ns Total Gate Charge Q tot 7.5 5 nc GateSource Charge (V DS = Vdc, V GS =.5 Vdc, I D =. Adc) Q gs. nc GateDrain Charge Q gd.9 nc BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I S =.7 Adc, V GS = Vdc) V SD.. Vdc Reverse Recovery Time (I S =.7 Adc, di S /dt = A/ s) t rr ns. Indicates Pulse Test: P.W. = sec max, Duty Cycle = %. 5. Handling precautions to protect against electrostatic discharge are mandatory.
NTGS, NVGS TYPICAL ELECTRICAL CHARACTERISTICS V GS = 5 V V GS =.5 V V DS = V I D, DRAIN CURRENT (AMPS) V GS = V V GS =.5 V V GS = V V GS =.5 V V GS = V V GS =.5 V I D, DRAIN CURRENT (AMPS) T J = 55 C......... V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)..5..5..5..5.5.5.....9. I D =. A.5.5.5 5 V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnResistance vs. GatetoSource Voltage I D =. A V GS =.5 V.7 5 5 5 5 75 5 T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature 5 R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) I DSS, LEAKAGE (na)...... V GS =.5 V. 5 7. I D, DRAIN CURRENT (AMPS) V GS =.7 V V GS =.5 V Figure. OnResistance vs. Drain Current and Gate Voltage T J = C V GS = V. V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. DraintoSource Leakage Current vs. Voltage
NTGS, NVGS TYPICAL ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) V GS = V C iss C oss C rss V GS, GATETOSOURCE VOLTAGE (VOLTS) 5 Q Q QT V GS I D =. A V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 5 7 Q g, TOTAL GATE CHARGE (nc) Figure. GatetoSource and DraintoSource Voltage vs. Total Charge V GS(th), GATE THRESHOLD VOLTAGE (NORMALIZED)....9..7 I D = 5 A. 5 5 5 5 75 5 T J, JUNCTION TEMPERATURE ( C) Figure 9. Gate Threshold Voltage Variation with Temperature 5 I S, SOURCE CURRENT (AMPS) V GS = V T J = 5 C...5..7..9 V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage vs. Current
NTGS, NVGS TYPICAL ELECTRICAL CHARACTERISTICS POWER (W).... TIME (sec) Figure. Single Pulse Power. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE. Duty Cycle =.5...5.. Single Pulse. E E E E E+ SQUARE WAVE PULSE DURATION (sec) E+ E+ E+ Figure. Normalized Thermal Transient Impedance, JunctiontoAmbient 5
NTGS, NVGS PACKAGE DIMENSIONS TSOP CASE G ISSUE V E ÉÉÉ NOTE 5 e.5 A 5 D b E A c L H M DETAIL Z DETAIL Z L GAUGE PLANE C SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.5 PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. MILLIMETERS DIM MIN NOM MAX A.9.. A... b.5..5 c... D.9.. E.5.75. E..5.7 e.5.95.5 L... L.5 BSC M STYLE : PIN. DRAIN. DRAIN. GATE. SOURCE 5. DRAIN. DRAIN RECOMMENDED SOLDERING FOOTPRINT* X.. X.95.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5, Denver, Colorado 7 USA Phone: 7575 or Toll Free USA/Canada Fax: 757 or 7 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 575 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTGST/D