General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. MDF7N5B N-Channel MOSFET 5V, 7.A,.35Ω Features V DS = 5V = 7.A @ V GS = V R DS(ON).35Ω @ V GS = V Applications Power Supply PFC High Current, High Speed Switching MDF7N5B N-channel MOSFET 5V D TO-F MDF Series G S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 5 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C =5 o C 7.* A T C = o C.* A Pulsed Drain Current () M 8* A Power Dissipation T C =5 o C P D W Derate above 5 o C.33 W/ o C Repetitive Avalanche Energy () E AR 3. mj Peak Diode Recovery dv/dt (3) dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS mj Junction and Storage Range T J, T stg -55~5 * Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja.5 Thermal Resistance, Junction-to-Case () R θjc 3. o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF7N5BTH -55~5 o C TO-F Tube Halogen Free Electrical Characteristics (Ta =5 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 5µA, V GS = V 5 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 5µA. -. Drain Cut-Off Current SS V DS = 5V, V GS = V - - µa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, = 3.5A -.5.35 Ω Forward Transconductance g fs V DS = 3V, = 3.5A - 8.5 - S Dynamic Characteristics Total Gate Charge Q g - 8. - Gate-Source Charge Q gs V DS = 5V, = 7.A, V GS = -.5 - V (3) Gate-Drain Charge Q gd -.7 - Input Capacitance C iss - 78 - Reverse Transfer Capacitance C rss V DS = 5V, V GS = V, f =.MHz -. - Output Capacitance C oss - 85. - Turn-On Delay Time t d(on) - 3. - Rise Time t r V GS = V, V DS = 35V, = 7.A, - 3. - Turn-Off Delay Time t d(off) R G = 5Ω (3) - 57. - Fall Time t f - 38 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 7 - A Source-Drain Diode Forward Voltage V SD I S = 7.A, V GS = V - -. V Body Diode Reverse Recovery Time t rr I F = 7.A, di/dt = A/µs - 8 - ns Body Diode Reverse Recovery Charge Q rr -.3 - µc V nc pf ns MDF7N5B N-channel MOSFET 5V Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX) =5 C. 3. I SD 7.A, di/dt A/us, V DD =5V, R g =5Ω, Starting T J =5 C. L=8.mH, I AS =7.A, V DD =5V, R g =5Ω, Starting T J =5 C,
,Drain Current [A] 8 V gs =.5V =5.V =5.5V =.V =.5V =7.V =8.V =.V =5.V 5 5 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics Notes. 5 μs Pulse Test. T C =5 R DS(ON) [Ω ]...8... V GS =.V 3 9,Drain Current [A] V GS =V Fig. On-Resistance Variation with Drain Current and Gate Voltage MDF7N5B N-channel MOSFET 5V 3.. R DS(ON), (Normalized) Drain-Source On-Resistance.5..5..5. V GS = V. = 3.5A BV DSS, (Normalized) Drain-Source Breakdown Voltage...9. V GS = V. = 5 μa. -5 5 5 T J, Junction [ o C].8-5 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with Fig. Breakdown Voltage Variation vs. * Notes ;. Vds=3V. V GS = V.5µs Pulse test (A) 5-55 5 R Reverse Drain Current [A] 5 5 V GS [V] Fig.5 Transfer Characteristics...8.. V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and 3
V GS, Gate-Source Voltage [V] 8 Note : I = 7.A D 8 8 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 35V 5V 3V Capacitance [pf] 8 8 C oss C iss C rss V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ;. V GS = V. f = MHz MDF7N5B N-channel MOSFET 5V Operation in This Area is Limited by R DS(on) µs, Drain Current [A] - - Single Pulse T J =Max rated T C =5 - s DC V DS, Drain-Source Voltage [V] ms ms Fig.9 Maximum Safe Operating Area MDF7N5B(TO-F) µs ms Z θ JC (t), Thermal Response - - D=.5...5.. single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve MDF7N5B(TO-F) 8 single Pulse R thjc = 3. /W T C = 5 7 Power (W) 8 E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation, Drain Current [A] 5 3 5 5 75 5 5 T C, Case [ ] Fig. Maximum Drain Current vs. Case
Physical Dimensions 3 Leads, TO-F Dimensions are in millimeters unless otherwise specified MDF7N5B N-channel MOSFET 5V Symbol Min Nom Max A.5.93 b.3.9 b.5.7 C.33.3 D 5.7.3 E 9..7 e.5 F.3.8 G.8.9 L. 3.7 L.79 3.7 Q.5.9 Q 3. 3.5 R 3. 3.55 5
MDF7N5B N-channel MOSFET 5V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.