INTEGRATED CIRCUITS DATA SHEET. TDA5332T Double mixer/oscillator for TV and VCR tuners. Preliminary specification File under Integrated Circuits, IC02

Similar documents
DATA SHEET. TDA8578 Dual common-mode rejection differential line receiver INTEGRATED CIRCUITS Dec 15

INTEGRATED CIRCUITS DATA SHEET. TDA7010T FM radio circuit. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA7021T FM radio circuit for MTS. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA7073A/AT Dual BTL power driver. Product specification File under Integrated Circuits, IC01

DATA SHEET. TSA5515T 1.3 GHz bi-directional I 2 C-bus controlled synthesizer INTEGRATED CIRCUITS

DATA SHEET. TEA0677T Dual pre-amplifier and equalizer for reverse tape decks INTEGRATED CIRCUITS

DATA SHEET. TDA8809T Radial error signal processor for compact disc players INTEGRATED CIRCUITS

DATA SHEET. TDA7053A Stereo BTL audio output amplifier with DC volume control INTEGRATED CIRCUITS Nov 09

DATA SHEET. TDA1579 TDA1579T Decoder for traffic warning (VWF) radio transmissions INTEGRATED CIRCUITS

DATA SHEET. SAA7157 Clock signal generator circuit for digital TV systems (SCGC) INTEGRATED CIRCUITS

DATA SHEET. TDA5732M Low power VHF, UHF mixer/oscillator for TV and VCR 2-band tuners. Philips Semiconductors INTEGRATED CIRCUITS.

DATA SHEET. TDA3840 TV IF amplifier and demodulator with TV signal identification INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TBA120U Sound I.F. amplifier/demodulator for TV. Product specification File under Integrated Circuits, IC02

INTEGRATED CIRCUITS DATA SHEET. TEA5591 AM/FM radio receiver circuit. Product specification File under Integrated Circuits, IC01

Class AB stereo headphone driver

DATA SHEET. TDA bit high-speed analog-to-digital converter INTEGRATED CIRCUITS Aug 26

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

INTEGRATED CIRCUITS DATA SHEET. TDA1545A Stereo continuous calibration DAC. Preliminary specification File under Integrated Circuits, IC01

DATA SHEET. TDA2546A Quasi-split-sound circuit with 5,5 MHz demodulation INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TEA5591A AM/FM radio receiver circuit. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA1521A 2 x 6 W hi-fi audio power amplifier. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA3810 Spatial, stereo and pseudo-stereo sound circuit. Product specification File under Integrated Circuits, IC02

DATA SHEET. TDA1558Q 2 x 22 W or 4 x 11 W single-ended car radio power amplifier INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA1526 Stereo-tone/volume control circuit. Product specification File under Integrated Circuits, IC01

DATA SHEET. TDA4852 Horizontal and vertical deflection controller for autosync monitors INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TEA5594 AM/FM radio receiver circuit. Product specification File under Integrated Circuits, IC01

DATA SHEET. TDA7056B 5 W mono BTL audio amplifier with DC volume control INTEGRATED CIRCUITS Aug 15

INTEGRATED CIRCUITS DATA SHEET. TDA x 1 W portable/mains-fed stereo power amplifier. Product specification File under Integrated Circuits, IC01

DATA SHEET. TEA6850 IF filter / amplifier / demodulator for FM radio receivers INTEGRATED CIRCUITS

DATA SHEET. TDA1514A 50 W high performance hi-fi amplifier INTEGRATED CIRCUITS. May Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA1029 Signal-sources switch. Product specification File under Integrated Circuits, IC01

DATA SHEET. TDA4851 Horizontal and vertical deflection controller for VGA/XGA and autosync monitors INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA1074A Dual tandem electronic potentiometer circuit. Product specification File under Integrated Circuits, IC01

DATA SHEET. TDA1516BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA8732 NICAM-728 demodulator (NIDEM) Product specification File under Integrated Circuits, IC02

DATA SHEET. TDA7052B Mono BTL audio amplifier with DC volume control INTEGRATED CIRCUITS. Product specification Supersedes data of 1996 May 28

INTEGRATED CIRCUITS DATA SHEET. TDA1596 IF amplifier/demodulator for FM radio receivers. Product specification File under Integrated Circuits, IC01

DATA SHEET. TDA1553CQ 2 22 W stereo BTL car radio power amplifier with loudspeaker protection and 3-state mode switch INTEGRATED CIRCUITS.

INTEGRATED CIRCUITS DATA SHEET. TDA8349A Multistandard IF amplifier and demodulator. Product specification File under Integrated Circuits, IC02

DATA SHEET. TDA1519A 22 W BTL or 2 x 11 W stereo car radio power amplifier INTEGRATED CIRCUITS

DATA SHEET. TDA1556Q 2 x 22 W stereo BTL differential amplifier with speaker protection and dynamic distortion detector INTEGRATED CIRCUITS

DATA SHEET. TDA8415 TV and VTR stereo/dual sound processor with integrated filters and I 2 C-bus control INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA3803A Stereo/dual TV sound decoder circuit. Product specification File under Integrated Circuits, IC02

INTEGRATED CIRCUITS DATA SHEET. TDA1552Q 2 x 22 W BTL stereo car radio power amplifier. Product specification File under Integrated Circuits, IC01

INTEGRATED CIRCUITS DATA SHEET. TDA1554Q 4 x 11 W single-ended or 2 x 22 W power amplifier. Product specification File under Integrated Circuits, IC01

DATA SHEET. TDA7057AQ 2 x 5 W stereo BTL audio output amplifier with DC volume control INTEGRATED CIRCUITS Nov 08

DATA SHEET. TSA GHz Bidirectional I 2 C-bus controlled synthesizer INTEGRATED CIRCUITS

DATA SHEET. 74LV86 Quad 2-input EXCLUSIVE-OR gate. Philips Semiconductors INTEGRATED CIRCUITS. Product specification January 1996 IC24

INTEGRATED CIRCUITS DATA SHEET. TDA9800 VIF-PLL demodulator and FM-PLL detector. Preliminary specification File under Integrated Circuits, IC02

DATA SHEET. UMA1014 Low-power frequency synthesizer for mobile radio communications INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA8395 SECAM decoder. Preliminary specification File under Integrated Circuits, IC02

DATA SHEET. TDA bit analog-to-digital converter with multiplexer and clamp INTEGRATED CIRCUITS Aug 20

INTEGRATED CIRCUITS DATA SHEET. TEA1039 Control circuit for switched-mode power supply. Product specification File under Integrated Circuits, IC02

TDA3603 Multiple voltage regulator with switch

DISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DATA SHEET. TDA8510J 26 W BTL and 2 13 W SE power amplifiers INTEGRATED CIRCUITS May 18

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ68 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DATA SHEET. TDA1543 Dual 16-bit DAC (economy version) (I 2 S input format) INTEGRATED CIRCUITS

DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. BFR94A NPN 3.5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

INTEGRATED CIRCUITS DATA SHEET. TDA1541 Dual 16-bit DAC. Product specification File under Integrated Circuits, IC01

DISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

INTEGRATED CIRCUITS DATA SHEET. TDA8425 Hi-fi stereo audio processor; I 2 C-bus. Product specification File under Integrated Circuits, IC02

DATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18

DATA SHEET. J111; J112; J113 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21

DATA SHEET. TDA8722 I 2 C-bus programmable modulator for negative video modulation and FM sound. Philips Semiconductors INTEGRATED CIRCUITS

INTEGRATED CIRCUITS DATA SHEET. TDA8424 Hi-Fi stereo audio processor; I 2 C-bus. Product specification File under Integrated Circuits, IC02

DATA SHEET. TDA1517; TDA1517P 2 6 W stereo power amplifier INTEGRATED CIRCUITS

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZV86 series Low-voltage stabistors Mar 21. Product specification Supersedes data of April 1992

TDA1302_1 2 Wed Sep 14 13:30: Data amplifier and laser supply circuit for CD player and read only optical systems TDA1302T

DISCRETE SEMICONDUCTORS DATA SHEET. BLV58 UHF linear push-pull power transistor

DATA SHEET. TDA3682 Multiple voltage regulator with power switches INTEGRATED CIRCUITS. Product specification Supersedes data of 2000 Nov 20

INTEGRATED CIRCUITS DATA SHEET. TDA7056A 3 W BTL mono audio output amplifier with DC volume control

DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

DATA SHEET. BGA2771 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.

DATA SHEET. BGA2776 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.

DATA SHEET. SEN6A39 80-COLUMN driver for dot-matrix STN LCD. data sheet (v3) 2005 Oct 20

DATA SHEET. TDA8547TS W BTL audio amplifier with output channel switching INTEGRATED CIRCUITS

DATA SHEET. TDA8571J 4 x 40 W BTL quad car radio power amplifier INTEGRATED CIRCUITS Mar 13

Dual N-channel dual gate MOSFET

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D109. BGA6489 MMIC wideband medium power amplifier. Product specification 2003 Sep 18

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2709 MMIC wideband amplifier. Preliminary specification 2002 Jan 31

INTEGRATED CIRCUITS DATA SHEET. TDA2611A 5 W audio power amplifier

SA620 Low voltage LNA, mixer and VCO 1GHz

DISCRETE SEMICONDUCTORS DATA SHEET. BLW98 UHF linear power transistor

NE/SA5234 Matched quad high-performance low-voltage operational amplifier

Quadruple filter DAC

DATA SHEET. 2N3553 Silicon planar epitaxial overlay transistor DISCRETE SEMICONDUCTORS Oct 27

IMPORTANT NOTICE. use

INTEGRATED CIRCUITS DATA SHEET. TDA3615J Multiple voltage regulator. Product specification Supersedes data of 1998 Jun 23.

SA602A Double-balanced mixer and oscillator

DISCRETE SEMICONDUCTORS DATA SHEET. BLT70 UHF power transistor. Product specification 1996 Feb 06

NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

DATA SHEET. 1N5225B to 1N5267B Voltage regulator diodes DISCRETE SEMICONDUCTORS Apr 26. Product specification Supersedes data of April 1992

DATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08

NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.

DISCRETE SEMICONDUCTORS DATA SHEET. BLV25 VHF power transistor

Symbol Parameter Conditions Min Typ Max Unit V DD supply voltage

Transcription:

INTEGRATED CIRCUITS DATA SHEET Double mixer/oscillator for TV and VCR File under Integrated Circuits, IC02 March 1989

GENERAL DESCRIPTION The is an integrated circuit that performs the mixer/oscillator functions in TV and VCR. This device gives the designer the capability to design an economical and physically small tuner which will be capable of meeting the most stringent requirements e.g. FTZ or FCC. The tuner development time can be drastically reduced by using this device. Features Balanced mixer with a common emitter input for band A Amplitude-controlled oscillator for band A Balanced mixer with common base input for band B Balanced oscillator for band B SAW filter preamplifier with an output impedance of 75 Ω in application Bandgap voltage stabilizer for oscillator stability Electronic bandswitch QUICK REFERENCE DATA PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage V P 12 V Band A frequency range depending on application f A 45 470 MHz Band B frequency range depending on application f B 160 860 MHz Band A noise factor 50 MHz NF A 7.5 db Band B noise factor 860 MHz NF B 9 db Band A input voltage 1% cross-modulation V 18-20 100 dbµv Band B input power 1% cross-modulation note 5 P I 21 dbm Band A voltage gain G VA 25 db Band B voltage gain G VB 36 db PACKAGE OUTLINE 20-lead mini-pack, plastic (SO20L; SOT163A); SOT163-1; 1996 November 29. March 1989 2

Fig.1 Block diagram. March 1989 3

PINNING Fig.2 Pinning diagram. 1 A OSC band A oscillator input 2 GND ground (0 V) 3 A OSC band A oscillator output 4 B OSC band B oscillator input 5 B OSC band B oscillator output 6 B OSC band B oscillator output 7 B OSC band B oscillator input 8 BS electronic bandswitch 9 IF OUT IF amplifier output 10 IF OUT IF amplifier output 11 IF IN IF amplifier input 12 IF IN IF amplifier input 13 MIX OUT mixer output 14 MIX OUT mixer output 15 V P positive supply voltage 16 B IN band B input 17 B IN band B input 18 A IN band A input 19 A IN band A input 20 RF GND ground for RF inputs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Supply voltage V P 0.3 14 V Switching voltage V 8 0 14 V Output current of each pin to ground I O 10 ma Maximum short-circuit time (all pins) t SC 10 s Storage temperature range T stg 55 + 150 C Operating ambient temperature range T amb 25 + 80 C Junction temperature T j +150 C THERMAL RESISTANCE From junction to ambient in free air R th j-a typ. 100 K/W HANDLING Pins 8, 9 and 10 withstand the ESD test in accordance with MIL-STD-883C category B (2000 V). March 1989 4

CHARACTERISTICS V P = 12 V; T amb =25 C; all voltages are referenced to ground (pins 2 and 20); measured in Fig.3; unless otherwise specified. PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage V 15 10 13.2 V Supply current I 15 42 55 ma Switching voltage; band A V SA 0 1.1 V band B V SB 3 5 V Switching current band A I SA 10 µa band B I SB 50 µa IF Amplifier differentially measured at 36 MHz mod. phase Input reflection coefficient note 4 S 11 0.5 2 db/ o Reverse transmission coefficient S 12 41 7 db/ o Forward transmission coefficient S 21 12 160 db/ o Output reflection coefficient S 22 9 10 db/ o Input admittance in application Y I 1.4 ms 0.9 pf Output admittance in application Z O 55 Ω 230 nh Band A mixer (including IF amplifier) measured using circuit shown in Fig.3 Frequency range f A 45 470 MHz Noise factor 50 MHz NF 7.5 9 db 225 MHz NF 9 11 db 300 MHz NF 10 12 db 470 MHz NF 11 13 db Optimum source conductance 50 MHz G 18-20 0.5 ms 225 MHz G 18-20 1.1 ms 300 MHz G 18-20 1.2 ms 470 MHz G 18-20 1.9 ms March 1989 5

Input capacitance 50 470 MHz C 18-20 2.5 pf Input voltage 1% cross-modulation; in channel; V 18-20 97 100 dbµv Input voltage 10 khz pulling; in channel; f < 300 MHz V 18-20 100 108 dbµv Voltage gain 20 log (V 9-10 /V 18 ) G V 22.5 25.0 27.5 db Band A mixer Conversion transadmittance mixer I 13 /V 18 = I 14 /V 18 C t 3.5 ms Mixer output admittance pins 13 and 14 0.1 ms Mixer output capacitance C 13-14 2 pf Band A oscillator Frequency range f A 80 520 MHz Frequency shift V P = 10% note 6; f = 330 MHz f 200 khz Frequency drift T = 25 C note 7; f = 330 MHz f 400 khz Frequency drift 5 s to 15 min after switching on; f 200 khz f = 330 MHz Band B mixer (including IF) PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT measured using circuit shown in Fig.3; measurements using hybrid; note 1 Frequency range f B 160 860 MHz Noise factor not corrected for image pins 16 and 17 160 MHz NF B 9 11 db 860 MHz NF B 9 11 db Available input power note 5; 1% cross-modulation; in channel; pins 16 and 17; 160 MHz P IB 25 21 dbm 860 MHz P IB 25 21 dbm 10 khz pulling note 5; pins 16 and 17; in channel 860 MHz 20 dbm March 1989 6

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT N + 5 1 MHz pulling notes 2 and 5; 820 MHz 42 35 dbm Voltage gain note 3; 160 MHz G VB 33 36 39 db 860 MHz G VB 33 36 39 db Band B oscillator Frequency range f B 200 900 MHz Frequency shift note 6; V P = 10% f 400 khz Frequency drift note 7; T =25 C f 800 khz Frequency drift 5 s to 15 min after switching on f 400 khz Notes to the characteristics 1. The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the circuit is 100 Ω. 2. The input level of a N + 5 1 MHz signal (just visible). 3. The gain is defined as the transducer gain (measured in Fig.3) plus the voltage transformation ratio of L6 to L7 (6:1, 16 db). 4. All S parameters are referred to a 50 Ω system. 5. The input power is defined as the power delivered by the generator on a 50 Ω load. 6. The frequency shift is defined for a variation of power supply from; a) V P = 12 V to V P = 10.8 V b) V P = 12 V to V P = 13.2 V. In both cases the frequency shift is below the specified value. 7. The frequency drift is defined for a variation of ambient temperature from; a) T amb =25 C to T amb =0 C b) T amb =25 C to T amb =50 C In both cases the frequency shift is below the specified value. March 1989 7

APPLICATION INFORMATION Proposal of VHF/UHF tuner band A = VHF I + VHF III (45 to 300 MHz) band B = UHF (470 to 900 MHz) Fig.3 Application diagram. March 1989 8

Component values of the application diagram resistors R1 = 47 kω R2 = 18 Ω R3 = 1.2 kω R4 = 4.7 kω R5 = 100 Ω R6 = 22 kω R7 = 1 kω R8 = 2.2 kω R9 = 22 kω R10 = 15 kω R11 = 47 kω capacitors C1 = 1 nf C2 = 1 nf C3 = 1 nf C4 = 1 nf C5 = 1 nf C6 = 1 nf C7 = 1 nf C8 = 15 pf (N750) C9 = 15 pf (N750) C10 = 1 nf C11 = 1 nf C12 = 1 nf C13 = 0.68 pf (SMD) C14 = 1 pf (SMD) C15 = 1 pf (SMD) C16 = 0.68 pf (SMD) C17 = 100 pf (SMD) C18 = 5.6 pf (SMD) C19 = 1 pf (NPO) C20 = 1 pf (NPO) C21 = 82 pf (N750) C22 = 1 nf C23 = 1 nf C24 = 1 nf C25 = 1 nf C26 = 1 µf (40V) C27 = 1 nf Cm = 18 pf (N750) diodes and IC D1 = BB911 D2 = BA482 D3 = BB405B IC = coils L1 = 2.5 t (φ3) L2 = 8.5 t (φ3) L3 = 1.5 t (φ3) L4 = 1.5 t (φ3) L5 = 2 5 t (note 1) L8 = 5 µh (choke coil) transformer L6 = 12t (note 1) L7 = 2 t wire size for L1 to L4 = 0.4 and for L5 to L7 = 0.1 mm. Note 1. Coil type: TOKO 7 kn; material: 113 kn, screw core (03-0093), pot core (04-0026). March 1989 9

PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c y H E v M A Z 20 11 Q A 2 A 1 (A ) 3 A pin 1 index L L p θ 1 e b p 10 w M detail X 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A 1 A 2 A 3 b p c D (1) E (1) e H (1) E L L p Q v w y Z 0.30 0.10 0.012 0.004 2.45 2.25 0.096 0.089 0.25 0.01 0.49 0.36 0.019 0.014 0.32 0.23 0.013 0.009 13.0 12.6 0.51 0.49 7.6 7.4 0.30 0.29 1.27 0.050 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 10.65 10.00 0.419 0.394 1.4 0.055 1.1 0.4 0.043 0.016 1.1 1.0 0.043 0.039 0.25 0.25 0.1 0.01 0.01 0.004 θ 0.9 0.4 o 8 o 0.035 0 0.016 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT163-1 075E04 MS-013AC 95-01-24 97-05-22 March 1989 10

SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our IC Package Databook (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. The longitudinal axis of the package footprint must be parallel to the solder flow. The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonally- opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C. March 1989 11

DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1989 12