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Description: The Powerex is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. The power assembly is mounted on a forced aircooled heatsink and features state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate drive power supplies, and a DC-link capacitor bank. The control board provides a simple user interface along with built-in protection features including overvoltage, undervoltage lockout, overcurrent, overtemperature, and short circuit detection. Depending on application characteristics the is suitable for operation with DC bus voltages up to 400VDC and switching frequencies above 20kHz. Schematic Features: High performance IGBT inverter bridge Integrated gate drive with fault monitoring & protection System status / troubleshooting LEDs to verify or monitor proper operation Isolated gate drive power supplies Low inductance laminated bus Output current measurement & feedback Superior short circuit detection & shoot through prevention PP200T060(-) - 1 -
Absolute Maximum Ratings, T j = 25 C unless otherwise specified General Symbol Units IGBT Junction Temperature T j -40 to +150 C Storage Temperature T stg -40 to +125 C Operating Temperature T op -25 to +85 C Voltage Applied to DC terminals V CC 400 Volts Isolation Voltage, AC 1 minute, 60Hz sinusoidal V iso 2500 Volts IGBT Inverter Collector Current (T C = 25 C) I C 200 Amperes Peak Collector Current (T j < 150 C) I CM 400 Amperes Emitter Current I E 200 Amperes Peak Emitter Current I EM 400 Amperes Maximum Collector Dissipation (T j < 150 C) P c 590 Watts Gate Drive Board Unregulated +24V Power Supply 30 Volts Regulated +15V Power Supply 18 Volts PWM Signal Input Voltage 20 Volts Fault Output Supply Voltage 30 Volts Fault Output Current 50 ma IGBT Inverter Electrical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min Typ Max Units Collector Cutoff Current I CES V CE = V CES, V GE = 0V - - 1 ma Collector Emitter Saturation Voltage V CE(sat) I C = 200A, T j = 25 C - 1.6 2.2 Volts I C = 200A, T j = 125 C - 1.6 - Volts Emitter Collector Voltage V EC I E = 200A - - 2.6 Volts t d(on) - - 120 ns Inductive Load Switching Times t r - - 100 ns t d(off) V CC = 300V I C = 200A - - 350 ns t f V GE = 15V R G = 3.1Ω - - 250 ns Diode Reverse Recovery Time t rr - - 150 ns Diode Reverse Recovery Charge Q rr - 3.8 - µc DC Link Capacitance 18000 µf PP200T060(-) - 2 -
Gate Drive Board Electrical Characteristics Characteristics Min Typ Max Units Unregulated +24V Power Supply 20 24 30 Volts Regulated +15V Power Supply 14.4 15 18 Volts PWM Input On Threshold 12 15 Volts PWM Input Off Threshold 0 2 Volts Output Overcurrent Trip 300 Amperes Overtemperature Trip 96 98 100 C Overvoltage Trip 460 Volts DC Link Voltage Feedback See Figure Below Volts Heatsink Temperature Feedback See Figure Below Volts Output Current Feedback See Figure Below Volts DC Link Feedback Heatsink Temperature Feedback Output Current Feedback 500 120 500 DC Link Voltage (Volts) 400 300 200 100 Heatsink Temperature (ºC) 100 80 60 40 20 Output Current (Amps) 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 2 3 4 5 6 7 8 9 10 Feedback Voltage (Volts) Feedback Voltage (Volts) Feedback Voltage (Volts) Thermal and Mechanical Characteristics Characteristics Symbol Test Conditions Min Typ Max Units IGBT Thermal Resistance, Junction to Case R th(j-c)q Per IGBT ½ module - 0.13 0.21 C/W FWD Thermal Resistance, Junction to Case R th(j-c)d Per FWD ½ module 0.35 C/W Contact Thermal Resistance R th(c-f) - 0.045 - C/W Heatsink Thermal Resistance R th(f-a) 1500 LFM airflow 0.040 C/W Mounting Torque, AC terminals 75 90 in-lb Mounting Torque, DC terminals 130 150 in-lb Mounting Torque, Mounting plate 130 150 in-lb Weight 21 lb PP200T060(-) - 3 -
Gate Drive Board Interface Signal Definitions Pin Signal Name Description 1 Shield Connected to circuit ground 2 PWM A- 0-15 V signal controlling the duty cycle of A- IGBT 1 Open collector output, external pull-up resistor required 3 Phase A Error LOW = No Error; Floating = Phase A overcurrent or short circuit 4 PWM A+ 0-15 V signal controlling the duty cycle of A+ IGBT 5 PWM B- 0-15 V signal controlling the duty cycle of B- IGBT 1 Open collector output, external pull-up resistor required 6 Phase B Error LOW = No Error; Floating = Phase B overcurrent or short circuit 7 PWM B+ 0-15 V signal controlling the duty cycle of B+ IGBT 8 PWM C- 0-15 V signal controlling the duty cycle of C- IGBT 1 Open collector output, external pull-up resistor required 9 Phase C Error LOW = No Error; Floating = Phase C overcurrent or short circuit 10 PWM C+ 0-15 V signal controlling the duty cycle of C+ IGBT 1 Open collector output, external pull-up resistor required 11 Overtemp LOW = No Error; Floating = heatsink overtemp 12 Not Connected 13 DC Link Voltage Analog voltage representation of DC link voltage 14 24 VDC input power 2 20 30 VDC input voltage range 15 24 VDC input power 2 20 30 VDC input voltage range 16 15 VDC input power 2 14.4 18 VDC input voltage range 17 15 VDC input power 2 14.4 18 VDC input voltage range 18 GND Ground reference for 15 and 24 VDC inputs 19 GND Ground reference for 15 and 24 VDC inputs 20 Heatsink Temperature Analog voltage representation of heatsink temperature 21 GND 3 Tied to pins 18 and 19 22 I out Phase A Analog voltage representation of phase A output current 23 GND 3 Tied to pins 18 and 19 24 I out Phase B Analog voltage representation of phase B output current 25 GND 3 Tied to pins 18 and 19 26 I out Phase C Analog voltage representation of phase C output current Notes: 1. Open collectors can be pulled up to 30 V max and sink 50mA continuous. 2. Do not connect a 15 VDC and 24 VDC source to the unit at the same time, use one or the other. 3. GND signals to be used for analog feedback signals, i.e. twisted pair with I out Phase A. Gate Drive Board Interface Connector Description Symbol Type Manufacturer Gate Drive Board Interface Header J1 0.100 x 0.100 latching header, 26 pin 3M# 3429-6002 or equivalent Recommended Mating Socket - 0.100 x 0.100 IDC socket, 26 pin 3M# 3399-7600 or equivalent Recommended Strain Relief - Plastic strain relief 3M# 3448-3026 or equivalent PP200T060(-) - 4 -
Performance Curves Effective Output Current vs. Carrier Frequency (Typical) IGBT Junction Temperature 140 130 120 110 100 90 80 70 60 50 40 40 60 80 100 120 140 160 180 200 220 240 260 280 300 I out A RMS 10kHz 5kHz 1kHz Condition Symbol Value Units Ambient Temperature T A 40 C DC Bus Voltage V CC 300 Volts Load Power Factor cos φ 0.8 IGBT Saturation Voltage V CE(sat) Typical @ T J = 125 C Volts IGBT Switching Loss E SW Typical @ T J = 125 C mj Airflow - 1500 LFM Switching Conditions 3 phase PWM, 60Hz sinusoidal output PP200T060(-) - 5 -
Mechanical Drawing PP200T060(-) - 6 -
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