Technical. Application. Assembly. Availability. Pricing. Phone

Similar documents
TENTATIVE PP225D120. POW-R-PAK TM 225A / 1200V Half Bridge IGBT Assembly. Description:

TENTATIVE PP800D120-V01

Features: Phase A Phase B Phase C -DC_A -DC_B -DC_C

IAP200T120 SixPac 200A / 1200V 3-Phase Bridge IGBT Inverter

PP400B060-ND. H-Bridge POW-R-PAK IGBT Assembly 400 Amperes/600 Volts

IAP200B120 Integrated Advanced PowerStack 200A / 1200V Full-Bridge IGBT Inverter

IAP100T120 Integrated Advanced PowerStack 100A / 1200V Three-Phase-Bridge IGBT Inverter

PP300T060-ND. 3-Phase POW-R-PAK IGBT Assembly 300 Amperes/600 Volts

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

CM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts

MITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE

S R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters

QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts

L M 1 F O (L) 5 F O (H) DETAIL "A"

T - 4 TYP. XØ (2 PLACES) W SQ. PIN (10 PLACES) TERMINAL CODE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO VP1 RFO AMP E2 C2E1 C1

P Q SIGNAL TERMINAL 1 F O (L) 5 F O (H) V S DETAIL "A"

PM300DSA060 Intellimod Module Single Phase IGBT Inverter Output 300 Amperes/600 Volts

V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.

Y Y D T SQ PIN (10 PLS) L N TERMINAL CODE 5 : FNO 4 : VNC N 3 : CN1 2 : NC 1 : VN1 5 : FPO 4 : VPC P 3 : CP1 2 : NC 1 : VP1. FWDi IGBT C2E1.

PS11035 Intellimod Module Application Specific IPM 20 Amperes/600 Volts

AB (2 PLACES) 30 NC 31 P 33 V 34 W

PS21963-S Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts

PS11036 Intellimod Module Application Specific IPM 30 Amperes/600 Volts

Y (4 PLACES) G1W E1W G2W E2W U V W G3W E3W G4W RTC RTC RTC E4U E4W. AF JST Connector AWG Wire # SXH-001T-P ~ 22 or SXH-002T-P0.

PS21353-GP. Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts

PS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

PS21867-P. Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts

PS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

PS21265-P PS21265-AP Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

PM30CSJ060 Intellimod Module Three Phase IGBT Inverter Output 30 Amperes/600 Volts

IGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module

V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875

U (2 TYP.) T WFO VUPC IN F O GND GND OUT OT OUT OT S I

V VPI V (14 TYP.) VFO R (2 TYP.) WFO UP UFO V VPC GND GND GND GND GND GND VCC

U P V VPI VFO WFO UP UFO V VPC GND GND

U P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND

N P HEATSINK SIDE 25 UN 26 VUFB 27 UP 30 NC 31 NC 32 NC 33 NC 34 NC 35 NC 28 U(VUFS) 29 NC

PM25RSB120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts

BAP1551 Gate Drive Board

1200 V 600 A IGBT Module

Symbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

CP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts

High Power Rugged Type IGBT Module

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

Applied between V UFB -V UFS, V VFB -V VFS,V WFB -V WFS. Applied between U P,V P,W P -V PC, U N,V N,W N -V NC

PS S Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

PM75DSA120 Intellimod Module Single Phase IGBT Inverter Output 75 Amperes/1200 Volts

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)

PS21562-P. Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant

FBA42060 PFC SPM 45 Series for Single-Phase Boost PFC

Data Sheet GHIS030A120S-A2

C L DETAIL "B" TERMINAL CODE 1 (VNC) 2 VUFB 3 VVFB 4 VWFB 5 UP 6 VP 7 WP 8 VP1 9 VNC* 10 UN 11 VN 12 WN 13 VN1 HEATSINK SIDE

Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A

Data Sheet GHIS040A060S A2

FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC

FPDB40PH60B PFC SPM 3 Series for 2-Phase Bridgeless PFC

TYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I

DIM1000ACM33-TS001. IGBT Chopper Module DIM1000ACM33-TS001 FEATURES KEY PARAMETERS V CES

SUSPM TM DEC LVH200G1201_Preliminary LVH200G1201Z*_Preliminary. SUSPM X 48.5 X 30 mm. 1200V 200A 2-Pack IGBT Module. Features.

MG12300D-BN2MM Series 300A Dual IGBT

Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

FPDB30PH60 PFC SPM 3 Series for 2-Phase Bridgeless PFC

V VPC V FO V WPI W FO W UP UFO V VPI GND GND GND GND V CC OUT OUT. Dimensions Inches Millimeters L

PM50RSK060 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts

Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A

IGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd

D AB Z DETAIL "B" DETAIL "A"

Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications

VLA554-01R. IGBT Gate Driver + DC/DC Converter

Half Bridge IGBT Power Module, 600 V, 100 A

FPAB30BH60B PFC SPM 3 Series for Single-Phase Boost PFC

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A

MG200Q2YS60A(1200V/200A 2in1)

Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A

Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A

CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications

IR3101 Series 1.6A, 500V

1200V 50A IGBT Module

N 36 NU 37 W 38 V 39 U 40 P 41 U 42 V

FPAB30BH60 PFC SPM 3 Series for Single-Phase Boost PFC

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A

Integrated Power Hybrid IC for Appliance Motor Drive Applications

FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT

IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC

T C = 25 C 400 T C = 80 C 300 A

Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A

Transcription:

6121 Baker Road, Suite 108 Minnetonka, MN 55345 www.chtechnology.com Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone 1-800-274-4284 E-Mail sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

Description: The Powerex is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. The power assembly is mounted on a forced aircooled heatsink and features state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate drive power supplies, and a DC-link capacitor bank. The control board provides a simple user interface along with built-in protection features including overvoltage, undervoltage lockout, overcurrent, overtemperature, and short circuit detection. Depending on application characteristics the is suitable for operation with DC bus voltages up to 400VDC and switching frequencies above 20kHz. Schematic Features: High performance IGBT inverter bridge Integrated gate drive with fault monitoring & protection System status / troubleshooting LEDs to verify or monitor proper operation Isolated gate drive power supplies Low inductance laminated bus Output current measurement & feedback Superior short circuit detection & shoot through prevention PP200T060(-) - 1 -

Absolute Maximum Ratings, T j = 25 C unless otherwise specified General Symbol Units IGBT Junction Temperature T j -40 to +150 C Storage Temperature T stg -40 to +125 C Operating Temperature T op -25 to +85 C Voltage Applied to DC terminals V CC 400 Volts Isolation Voltage, AC 1 minute, 60Hz sinusoidal V iso 2500 Volts IGBT Inverter Collector Current (T C = 25 C) I C 200 Amperes Peak Collector Current (T j < 150 C) I CM 400 Amperes Emitter Current I E 200 Amperes Peak Emitter Current I EM 400 Amperes Maximum Collector Dissipation (T j < 150 C) P c 590 Watts Gate Drive Board Unregulated +24V Power Supply 30 Volts Regulated +15V Power Supply 18 Volts PWM Signal Input Voltage 20 Volts Fault Output Supply Voltage 30 Volts Fault Output Current 50 ma IGBT Inverter Electrical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min Typ Max Units Collector Cutoff Current I CES V CE = V CES, V GE = 0V - - 1 ma Collector Emitter Saturation Voltage V CE(sat) I C = 200A, T j = 25 C - 1.6 2.2 Volts I C = 200A, T j = 125 C - 1.6 - Volts Emitter Collector Voltage V EC I E = 200A - - 2.6 Volts t d(on) - - 120 ns Inductive Load Switching Times t r - - 100 ns t d(off) V CC = 300V I C = 200A - - 350 ns t f V GE = 15V R G = 3.1Ω - - 250 ns Diode Reverse Recovery Time t rr - - 150 ns Diode Reverse Recovery Charge Q rr - 3.8 - µc DC Link Capacitance 18000 µf PP200T060(-) - 2 -

Gate Drive Board Electrical Characteristics Characteristics Min Typ Max Units Unregulated +24V Power Supply 20 24 30 Volts Regulated +15V Power Supply 14.4 15 18 Volts PWM Input On Threshold 12 15 Volts PWM Input Off Threshold 0 2 Volts Output Overcurrent Trip 300 Amperes Overtemperature Trip 96 98 100 C Overvoltage Trip 460 Volts DC Link Voltage Feedback See Figure Below Volts Heatsink Temperature Feedback See Figure Below Volts Output Current Feedback See Figure Below Volts DC Link Feedback Heatsink Temperature Feedback Output Current Feedback 500 120 500 DC Link Voltage (Volts) 400 300 200 100 Heatsink Temperature (ºC) 100 80 60 40 20 Output Current (Amps) 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 2 3 4 5 6 7 8 9 10 0 0 1 2 3 4 5 6 7 8 9 10 Feedback Voltage (Volts) Feedback Voltage (Volts) Feedback Voltage (Volts) Thermal and Mechanical Characteristics Characteristics Symbol Test Conditions Min Typ Max Units IGBT Thermal Resistance, Junction to Case R th(j-c)q Per IGBT ½ module - 0.13 0.21 C/W FWD Thermal Resistance, Junction to Case R th(j-c)d Per FWD ½ module 0.35 C/W Contact Thermal Resistance R th(c-f) - 0.045 - C/W Heatsink Thermal Resistance R th(f-a) 1500 LFM airflow 0.040 C/W Mounting Torque, AC terminals 75 90 in-lb Mounting Torque, DC terminals 130 150 in-lb Mounting Torque, Mounting plate 130 150 in-lb Weight 21 lb PP200T060(-) - 3 -

Gate Drive Board Interface Signal Definitions Pin Signal Name Description 1 Shield Connected to circuit ground 2 PWM A- 0-15 V signal controlling the duty cycle of A- IGBT 1 Open collector output, external pull-up resistor required 3 Phase A Error LOW = No Error; Floating = Phase A overcurrent or short circuit 4 PWM A+ 0-15 V signal controlling the duty cycle of A+ IGBT 5 PWM B- 0-15 V signal controlling the duty cycle of B- IGBT 1 Open collector output, external pull-up resistor required 6 Phase B Error LOW = No Error; Floating = Phase B overcurrent or short circuit 7 PWM B+ 0-15 V signal controlling the duty cycle of B+ IGBT 8 PWM C- 0-15 V signal controlling the duty cycle of C- IGBT 1 Open collector output, external pull-up resistor required 9 Phase C Error LOW = No Error; Floating = Phase C overcurrent or short circuit 10 PWM C+ 0-15 V signal controlling the duty cycle of C+ IGBT 1 Open collector output, external pull-up resistor required 11 Overtemp LOW = No Error; Floating = heatsink overtemp 12 Not Connected 13 DC Link Voltage Analog voltage representation of DC link voltage 14 24 VDC input power 2 20 30 VDC input voltage range 15 24 VDC input power 2 20 30 VDC input voltage range 16 15 VDC input power 2 14.4 18 VDC input voltage range 17 15 VDC input power 2 14.4 18 VDC input voltage range 18 GND Ground reference for 15 and 24 VDC inputs 19 GND Ground reference for 15 and 24 VDC inputs 20 Heatsink Temperature Analog voltage representation of heatsink temperature 21 GND 3 Tied to pins 18 and 19 22 I out Phase A Analog voltage representation of phase A output current 23 GND 3 Tied to pins 18 and 19 24 I out Phase B Analog voltage representation of phase B output current 25 GND 3 Tied to pins 18 and 19 26 I out Phase C Analog voltage representation of phase C output current Notes: 1. Open collectors can be pulled up to 30 V max and sink 50mA continuous. 2. Do not connect a 15 VDC and 24 VDC source to the unit at the same time, use one or the other. 3. GND signals to be used for analog feedback signals, i.e. twisted pair with I out Phase A. Gate Drive Board Interface Connector Description Symbol Type Manufacturer Gate Drive Board Interface Header J1 0.100 x 0.100 latching header, 26 pin 3M# 3429-6002 or equivalent Recommended Mating Socket - 0.100 x 0.100 IDC socket, 26 pin 3M# 3399-7600 or equivalent Recommended Strain Relief - Plastic strain relief 3M# 3448-3026 or equivalent PP200T060(-) - 4 -

Performance Curves Effective Output Current vs. Carrier Frequency (Typical) IGBT Junction Temperature 140 130 120 110 100 90 80 70 60 50 40 40 60 80 100 120 140 160 180 200 220 240 260 280 300 I out A RMS 10kHz 5kHz 1kHz Condition Symbol Value Units Ambient Temperature T A 40 C DC Bus Voltage V CC 300 Volts Load Power Factor cos φ 0.8 IGBT Saturation Voltage V CE(sat) Typical @ T J = 125 C Volts IGBT Switching Loss E SW Typical @ T J = 125 C mj Airflow - 1500 LFM Switching Conditions 3 phase PWM, 60Hz sinusoidal output PP200T060(-) - 5 -

Mechanical Drawing PP200T060(-) - 6 -

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.