KSP KSP VHF/UHF transistor NPN Epitaxial Silicon Transistor TO-9. Base. Emitter. Collector Absolute Maximum Ratings T a =5 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage 5 V V EBO Emitter-Base Voltage. V P C Collector Power Dissipation (T a =5 C) 5 mw Derate above 5 C.8 mw/ C P C Collector Power Dissipation (T C =5 C). W Derate above 5 C 8. W/ C T J Junction Temperature 5 C T STG Storage Temperature -55~5 C Rth(j-c) Thermal Resistance, Junction to Case 5 C/W Rth(j-a) Thermal Resistance, Junction to Ambient 57 C/W Electrical Characteristics T a =5 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BV CBO Collector-Base Breakdown Voltage I C =µa, I E = V BV CEO Collector-Emitter Breakdown Voltage I C =ma, I B = 5 V BV EBO Emitter-Base Breakdown Voltage I E =µa, I C =. V I CBO Collector Cut-off Current V CB =5V, I E = na I EBO Emitter Cut-off Current V EB =V, I C = na h FE DC Current Gain V CE =V, I C =ma V CE (sat) Collector-Emitter Saturation Voltage I C =ma, I B =.ma.5 V V BE (on) Base-Emitter On Voltage V CE =V, I C =ma.95 V f T Current Gain Bandwidth Product V CE =V, I C =ma, f=mhz 5 MHz C ob Output Capacitance V CB =V, I E =, f=mhz.7 pf C rb Collector Base Feedback Capacitance V CB =V, I E =, f=mhz.5.5 pf C c rbb Collector Base Time Constant V CB =V, I C =ma, f=.8mhz 9. ps * Pulse Test: PW µs, Duty Cycle % Fairchild Semiconductor Corporation Rev. A, September
Typical Characteristics KSP hfe, DC CURRENT GAIN VCE = V VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE(sat) VBE(sat) IC = IB. Figure. DC current Gain Figure. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = V f=mhz yib[ ], INPUT ADMITTANCE 8 gib -bib Figure. Current Gain Bandwidth Product Figure. Rectangular Form yob[ ], OUTPUT ADMITTANCE - - - - -5 MHz 7-5 7 8 9 yfb[ ], FORWARD TRANSFER ADMITTANCE 9 8 7 5 - - -gfb - bfb gib[ ] Figure 5. Polar Form Figure. Rectangular Form Fairchild Semiconductor Corporation Rev. A, September
Typical Characteristics (Continued) KSP 9 jbfb[ ], 8 7 5 7 MHz yfb[ ], REVERSE TRANSFER ADMITTANCE 5 -brb 7 5 - - - gfb[ ] Figure 7. Polar Form Figure 8. Rectangular Form 9 jbrb[ ], - - - - 7 MHz -5 -. -. -. -.8 -....8... yob[ ], OUTPUT ADMITTANCE 8 7 5 bob gob gfb[ ] Figure 9. Polar Form Figure. Rectangular Form jbob[ ], 8 7 MHz 8 gob[ ] Figure. Polar Form Fairchild Semiconductor Corporation Rev. A, September
Package Dimensions KSP TO-9.58 +.5.5.8MAX. ±..7TYP [.7 ±.]. ±..8 +..5.7TYP [.7 ±.]. ±. (R.9) (.5).7 ±..58 ±..8 +..5 Dimensions in Millimeters Fairchild Semiconductor Corporation Rev. A, September
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