NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant NPN TRANSISTOR. AMPERES VOLTS,. WATTS COLLECTOR, MAXIMUM RATINGS (T C = unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage V CEO CollectorBase Voltage V CB EmitterBase Voltage V EB 6. Base Current Continuous I B. Adc Collector Current Continuous I C. Adc Collector Current Peak I CM 5. Adc BASE SOT CASE 8E STYLE EMITTER MARKING DIAGRAM AYW N ESD Human Body Model HBM B V ESD Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Power Dissipation Total P D @ T A = (Note ) Total P D @ T A = (Note ) Thermal Resistance, JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note ) Maximum Lead Temperature for Soldering Purposes, /8 from case for 5 seconds P D..8 R JA 6 R JA 55 W C/W T L 6 C A Y W N = Assembly Location Year = Work Week = Specific Device Code = PbFree Package Device Package Shipping NJTNTG NJVNTG NJTNTG NJVNTG ORDERING INFORMATION SOT (PbFree) SOT (PbFree) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Operating and Storage Junction Temperature Range T J, T stg 55 to +5 C. Mounted on sq. (65 sq. mm) Collector pad on FR bd material.. Mounted on. sq. (7.6 sq. mm) Collector pad on FR bd material. Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: NJTN/D
NJTN, NJVNTG, NJVNTG ÎÎÎ ELECTRICAL CHARACTERISTICS (T C = unless otherwise noted) ÎÎÎ Characteristic Symbol Min Typ Max Unit ÎÎÎ OFF CHARACTERISTICS ÎÎÎ CollectorEmitter Sustaining Voltage V C = madc, I B = Adc) CEO(sus) ÎÎÎ EmitterBase Voltage V EBO E = 5 Adc, I C = Adc) 6. Collector Cutoff Current I CBO nadc (V CB = ) Emitter Cutoff Current I EBO nadc (V BE = 6. ) ÎÎÎ ON CHARACTERISTICS (Note ) CollectorEmitter Saturation Voltage V CE(sat) C =.5 Adc, I B = 5. madc). C =. Adc, I B = madc).5 C =. Adc, I B =. Adc). BaseEmitter Saturation Voltage V BE(sat) C =. Adc, I B =. Adc). BaseEmitter On Voltage V BE(on) C =. Adc, V CE =. ). DC Current Gain h FE C =.5 Adc, V CE =. ) C =. Adc, V CE =. ) 5 C =. Adc, V CE =. ) ÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎ Output Capacitance C ob (V CB =, f =. MHz) 5 pf Input Capacitance C ib (V EB = 5., f =. MHz) 7 pf CurrentGain Bandwidth Product (Note ) f T MHz C = 5 ma, V CE = V, F test =. MHz) 5. Pulse Test: Pulse Width s, Duty Cycle %.. f T = h FE f test.5 P D, POWER DISSIPATION (W)..5..5 T C T A 5 5 75 T J, TEMPERATURE ( C) Figure. Power Derating 5 5
NJTN, NJVNTG, NJVNTG TYPICAL CHARACTERISTICS h FE, DC CURRENT GAIN 6 5 5 C V CE = V h FE, DC CURRENT GAIN 7 6 5 5 C V CE = V...... Figure. DC Current Gain Figure. DC Current Gain V CE(sat), COLLECTOREMITTER.. I C /I B = 5 C V CE(sat), COLLECTOREMITTER. I C /I B = 5 5 C.... Figure. CollectorEmitter Saturation Voltage.... Figure 5. CollectorEmitter Saturation Voltage V CE(sat), COLLECTOREMITTER.... I C = A A A.5 A. A... V BE(on), EMITTERBASE VOLTAGE (V)...8.6... V CE = V. 5 C. I B, BASE CURRENT (A) Figure 6. Collector Saturation Region Figure 7. V BE(on) Voltage
NJTN, NJVNTG, NJVNTG TYPICAL CHARACTERISTICS.. V BE(sat), EMITTERBASE. I C/I B =..8.6.. 5 C V BE(sat), EMITTERBASE. I C/I B = 5..8.6.. 5 C...... Figure 8. BaseEmitter Saturation Voltage Figure 9. BaseEmitter Saturation Voltage C ibo, INPUT CAPACITANCE (pf) 5 5 5 5 5 5 T J = f test = MHz 6 C obo, OUTPUT CAPACITANCE (pf) 8 6 T J = f test = MHz 7 8 5 6 7 8 9 V EB, EMITTER BASE VOLTAGE (V) V CB, COLLECTOR BASE VOLTAGE (V) Figure. Input Capacitance Figure. Output Capacitance f Tau, CURRENT BANDWIDTH PRODUCT (MHz) 6 8 T J = f test = MHz V CE = V. ms ms.5 ms ms.... V CE, COLLECTOREMITTER VOLTAGE (V) Figure. CurrentGain Bandwidth Product Figure. Safe Operating Area
NJTN, NJVNTG, NJVNTG PACKAGE DIMENSIONS D b SOT (TO6) CASE 8E ISSUE N NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: INCH..8 () H E e A e A b E L L C MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.6.75.6.6.68 A..6.... b.6.75.89...5 b.9.6..5..6 c..9.5.9.. D 6. 6.5 6.7.9.56.6 E..5.7..8.5 e....87.9.9 e.85.9.5..7. L..8 L.5.75..6.69.78 H E 6.7 7. 7..6.76.87 STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR SOLDERING FOOTPRINT*.8.5..79..9..9 6..8..79.5.59 SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 67575 or 886 Toll Free USA/Canada Fax: 67576 or 8867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 85875 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NJTN/D