MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features V DS = 6V = 15A @ V GS = 1V R DS(ON).4Ω @ V GS = 1V Applications Power Supply PFC High Current, High Speed Switching D TO-22 MDP Series TO-22F MDF Series G S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol MDP15N6G MDF15N6G Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current T C=25 o C 15 15* A T C=1 o C 9.5 9.5* A Pulsed Drain Current (2) M 6 6* A Power Dissipation T C=25 o C P D 231.4 36.7 W Derate above 25 o C 1.85.29 W/ o C Repetitive Avalanche Energy (2) E AR 23.1 mj Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 511 mj Junction and Storage Temperature Range T J, T stg -55~15 * Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol MDP15N6G MDF15N6G Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 62.5 Thermal Resistance, Junction-to-Case (1) R θjc.54 3.4 o C/W 1
MDP15N6G / MDF15N6G N-Channel MOSFET 6V Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP15N6GTH -55~15 o C TO-22 Tube Halogen Free MDF15N6GTH -55~15 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta =25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25μA, V GS = V 6 - - Gate Threshold Voltage V GS(th) V DS = V GS, = 25μA 3. - 5. Drain Cut-Off Current SS V DS = 6V, V GS = V - - 1 μa Gate Leakage Current I GSS V GS = ±3V, V DS = V - - 1 na Drain-Source ON Resistance R DS(ON) V GS = 1V, = 7.5A -.34.4 Ω Forward Transconductance g fs V DS = 3V, = 7.5A (2) - 11.5 - S Dynamic Characteristics Total Gate Charge Q g - 49. - Gate-Source Charge Q gs V DS = 48V, = 15.A, V GS = 1V (2) - 15. - Gate-Drain Charge Q gd - 19.1 - Input Capacitance C iss - 2311 - Reverse Transfer Capacitance C rss V DS = 25V, V GS = V, f = 1.MHz - 1.8 - Output Capacitance C oss - 258 - Turn-On Delay Time t d(on) - 57 - Rise Time t r V GS = 1V, V DS = 3V, = 15.A, - 86 - Turn-Off Delay Time t d(off) R G = 25Ω (2) - 137 - Fall Time t f - 47 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 15 - A Source-Drain Diode Forward Voltage V SD I S = 15.A, V GS = V - - 1.4 V Body Diode Reverse Recovery Time t rr I F = 15.A, dl/dt = 1A/μs - 382 - ns Body Diode Reverse Recovery Charge Q rr - 4.47 - μc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 15A, di/dt 2A/us, V DD BVdss, R g =25Ω, Starting T J=25 C 4. L=7.9mH, I AS=15.A, V DD=5V, R g =25Ω, Starting T J=25 C, 2
(A) MDP15N6G / MDF15N6G N-Channel MOSFET 6V Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] R DS(ON) [Ω ] 4 3 2 V gs =5.5V =6.V =6.5V =7.V =7.5V =8.V =1.V =15.V.7.6.5 1 Notes 1. 25 μs Pulse Test 2. T C =25.4 V GS =1.V V GS =2V 5 1 15 2 V DS,Drain-Source Voltage [V].3 9 12 15 18 21 24 27 3 33 36 39 42 45,Drain Current [A] 3. 1.2 2.5 1. V GS = 1 V 2. = 7.5 A 1. V GS = V 2. = 25 μa 1.1 2. 1.5 1. 1..9.5. -5 5 1 15.8-5 5 1 15 T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=3V 1. V GS = V 2.25 s Pulse test 15 25-55 R 15 25 1 1 4 6 8 1 V GS [V] Fig.5 Transfer Characteristics..2.4.6.8 1. 1.2 1.4 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
Z θ JC (t), Thermal Response Z θ JC (t), Thermal Response, Drain Current [A], Drain Current [A] V GS, Gate-Source Voltage [V] Capacitance [pf] MDP15N6G / MDF15N6G N-Channel MOSFET 6V 1 8 Note : = 15.A 12V 3V 48V 5 4 C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 6 3 C iss 4 2 2 1 C rss Notes ; 1. V GS = V 2. f = 1 MHz 1 2 3 4 5 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 1 1 V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 1 2 1 s Operation in This Area is Limited by R DS(on) 1 s 1 1 1 ms 1 ms DC 1 ms 1 2 1 1 Operation in This Area is Limited by R DS(on) 1s 1 s 1 s 1 ms 1 ms 1 ms 1 1 DC 1-1 1-1 1-2 Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2 V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area MDP15N6G(TO-22) 1-2 Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2 V DS, Drain-Source Voltage [V] Fig.1 Maximum Safe Operating Area MDF15N6G(TO-22F) 1 D=.5 D=.5 1-1 1-2.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.54 /W 1 1-1.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3.4 /W 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve MDP15N6G(TO-22) 1-2 1-5 1-4 1-3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.12 Transient Thermal Response Curve MDF15N6G(TO-22F) 4
, Drain Current [A] Power (W) Power (W) MDP15N6G / MDF15N6G N-Channel MOSFET 6V 27 24 21 single Pulse R thjc =.54 /W T C = 25 1 8 single Pulse R thjc = 3.4 /W T C = 25 18 15 6 12 9 6 3 1E-5 1E-4 1E-3.1.1 1 1 Pulse Width (s) Fig.13 Single Pulse Maximum Power Dissipation MDP15N6G(TO-22) 4 2 1E-5 1E-4 1E-3.1.1 1 1 Pulse Width (s) Fig.14 Single Pulse Maximum Power Dissipation MDF15N6G(TO-22F) 16 14 12 1 8 6 4 2 25 5 75 1 125 15 T C, Case Temperature [ ] Fig.15 Maximum Drain Current vs. Case Temperature 5
MDP15N6G / MDF15N6G N-Channel MOSFET 6V Physical Dimensions 3 Leads, TO-22 Dimensions are in millimeters unless otherwise specified 6
MDP15N6G / MDF15N6G N-Channel MOSFET 6V Physical Dimensions 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A 4.5 4.93 b.63.91 b1 1.15 1.47 C.33.63 D 15.47 16.13 E 9.6 1.71 e 2.54 F 2.34 2.84 G 6.48 6.9 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q1 3.1 3.5 R 3. 3.55 7
MDP15N6G / MDF15N6G N-Channel MOSFET 6V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 8