Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Similar documents
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

TVS (transient voltage suppressor) Bi-directional, 5.5 V, 0.1 pf, 0201, 0402, RoHS and halogen free compliant

Qualified for industrial apllications according to the relevant tests of JEDEC47/20/22. Pin 1

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

ESD0P2RF-02LRH ESD0P2RF-02LS

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Robust low noise broadband pre-matched RF bipolar transistor

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

BGA5L1BN6 BGA5L1BN6. 18dB High Gain Low Noise Amplifier for LTE Lowband VCC GND. Features

Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

BGA855N6 BGA855N6. Low Noise Amplifier for Lower L-Band GNSS Applications GND. Features

ESD5V0SxUS. ESD5V0S5US E rotated in reel. Type Package Configuration Marking SOT363 SOT363 SOT363 ESD5V0S4US ESD5V0S5US

The ESD5451R is available in DFP1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram

Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications

For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications

ESD9N12BA ESD9N12BA. Descriptions. Features. Applications. Order information. http//:

6V8 * ESDA6V8UD ESDA6V8UD. Descriptions. Features. Order information. Applications. http//:

1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode

5V 4 * 1 5 ESD5344D ESD5344D. Descriptions. Features. Order information. Applications. http//:

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110

ESD5651N ESD5651N. Descriptions. Features. Applications. Order information. Pin1. Pin2. 4.5V, Single Li-ion Battery Port Surge Protector

ESD5311X ESD5311X 1-Line, Bi-directional, Ultra-low Capacitance http//: Transient Voltage Suppressors Descriptions

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

EAYW ESD5425E ESD5425E. Descriptions. Features. Order information. Applications. http//:

3 * ESD5302N ESD5302N. Descriptions. Features. Applications. Order information. http//:

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.4 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

Ultra compact transient voltage supressor

PTVS20VU1UPA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 300 W Transient Voltage Suppressor

PTVS22VU1UPA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 300 W Transient Voltage Suppressor

PESD5V0L1ULD. Low capacitance unidirectional ESD protection diode

PESD5V0S2BQA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PESD5V0F1BSF. 1. Product profile. 2. Pinning information. Extremely low capacitance bidirectional ESD protection diode. 1.1 General description

ESD protection for In-vehicle networks

AUIRF1324S-7P AUTOMOTIVE GRADE

Qualified for Automotive Applications. Product Validation according to AEC-Q100/101

PESDxS1UL series. 1. Product profile. ESD protection diodes in a SOD882 package. 1.1 General description. 1.2 Features. 1.

Orderable Part Number Form Quantity IRFHM8334PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8334TRPbF

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

ESDLIN03-1BWY. Automotive single-line Transil, transient voltage suppressor (TVS) for LIN bus. Application. Description. Features

ESD protection for In-vehicle network lines in automotive enviroments CAN LIN FlexRay SENT

Power Management & Multimarket

ESD protection for In-vehicle network lines in automotive enviroments CAN LIN FlexRay SENT

CAN bus ESD protection diode

PESD24VS1ULD. 1. General description. 2. Features and benefits. 3. Application information. 4. Quick reference data

AUTOMOTIVE GRADE. Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300

PESD2IVN-U. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

AQ4022 Series 1.3pF, 15A Discrete TVS Diode

PESD5V0X1UAB. Ultra low capacitance unidirectional ESD protection diode

SP pF 24kV Bidirectional Discrete TVS

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PTVS12VZ1USK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

4-Channel EMI-Filter with ESD-Protection FEATURES VEMI45AA-HNH VEMI45AA-HNH-GS MOLDING COMPOUND FLAMMABILITY RATING

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

CBTVS2A16-1F3. Circuit breaker with transient voltage suppressor. Description. Features. Complies with the following standards:

n-channel Power MOSFET

OptiMOS 2 Power-Transistor

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

OPTIREG Linear TLE4262

100BASE-T1 / OPEN Allicance BroadR-Reach automotive Ethernet Low-Voltage Differential Signaling (LVDS) automotive USB 2.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0F1BSF. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PESD24VL1BA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PESD5V0S2BT. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

IRS SOT-23 High-Side Gate Driver IC IRS10752LPBF. Features. Description. Package Options. Applications. Typical Connection Diagram

n-channel Power MOSFET

n-channel Power MOSFET

n-channel Power MOSFET

Power Management & Multimarket

ESD051-1F4. Low clamping single line unidirectional ESD. Datasheet. Features. Application. Description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PTVS5V0Z1USKP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 5. Pinning information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

AUTOMOTIVE GRADE. Tube 50 AUIRFS4115-7P Tape and Reel Left 800 AUIRFS4115-7TRL

AUTOMOTIVE GRADE. Tube 50 AUIRFS3004-7P Tape and Reel Left 800 AUIRFS3004-7PTRL

AUIRFR4105Z AUIRFU4105Z

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PESD5V0V1BLD. Very low capacitance bidirectional ESD protection diode

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD Protection Diode in SOT-23

PESD1LIN. 1. Product profile. LIN bus ESD protection diode in SOD General description. 1.2 Features. 1.3 Applications. Quick reference data

Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,

PESDxV4UG series. 1. Product profile. Very low capacitance quadruple ESD protection diode arrays in SOT353 package. 1.1 General description

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Bidirectional Symmetrical (BiSy) Low Capacitance, Dual-Line ESD-Protection Diode in SOT-323

Base Part Number Package Type Standard Pack Orderable Part Number

USB-OTG BUS-Port ESD-Protection for V BUS = 12 V

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

ESD Protection Diode in LLP1006-2L

Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus

Series PVT322PbF. Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Dual Pole, Normally Open, 0-250V, 170mA AC/DC

Transcription:

TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge) - IEC6-4-4 (EFT): ±2 kv / ±4 A (/ ns) - IEC6-4- (Surge): ±. A (8/2 μs) Bi-directional working voltage up to: V RWM = ±. V Line capacitance: C L =.8 pf (typical) at f = MHz Clamping voltage: V CL = 7. V (typical) at I TLP = 6 A with R DYN =. Ω (typical) Very low reverse current: I R < na (typical) Small form factor SMD Size 2 and low profile.8 mm x.28 mm x. mm Bidirectional and symmetric I/V characteristics for optimized design and assembly Pb-free (RoHS compliant) and halogen free package Guidelines for optimized PCB design and assembly process are available in [2] Potential applications IC/ASICs in audio, headset Human digital interfaces, buttons, GPIO Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2/22 Device information a ) Pin configuration b ) Schematic diagram Figure Table Pin configuration and schematic diagram Part information Type Package Configuration Marking code ESD24-B-W2 WLL-2-3 line, bi-directional CA ) The device does not have any marking on the device top. The marking code is on the pads. Datasheet Please read the Important Notice and Warnings at the end of this document Revision. www.infineon.com

Table of contents Table of contents Features............................................................................... Potential applications.................................................................. Product validation...................................................................... Device information..................................................................... Table of contents....................................................................... 2 Maximum ratings....................................................................... 3 2 Electrical characteristics................................................................ 4 3 Typical characteristic diagrams......................................................... 6 4 Package information.................................................................. 2 4. WLL-2-3 package....................................................................... 2 References............................................................................ 3 Revision history....................................................................... 3 Trademarks........................................................................... 4 Datasheet 2 Revision.

Maximum ratings Maximum ratings Note: T A = 2 C, unless otherwise specified ) Table 2 Maximum ratings Parameter Symbol Values Unit Reverse working voltage V RWM ±. V ESD discharge 2) V ESD (contact) ± kv V ESD (air) ±8 Peak pulse power 3) P PK 44 W Peak pulse current 3) I PP ±. A Operating temperature range T OP - to 2 C Storage temperature T stg -6 to C Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. Device is electrically symmetrical 2 V ESD according to IEC6-4-2 (R = 33 Ω, C = pf discharge network) 3 Stress pulse: 8/2μs current waveform according to IEC6-4- Datasheet 3 Revision.

Electrical characteristics 2 Electrical characteristics IF I PP VF... Forward voltage IF... Forward current VR... Reverse voltage IR... Reverse current I TLP R DYN ΔV ΔI ΔI ΔV VR V CL V TLP V t ΔV V h ΔI V RWM R DYN I R ΔV ΔI I T I R I T I PP I TLP V RWM V h V t V CL V TLP VF RDYN... Dynamic resistance VRWM... Reverse working voltage max. Vt... Trigger voltage Vh... Holding voltage VCL... Clamping voltage VTLP... TLP voltage IR... Reverse leakage current Ipp... Peak pulse current ITLP... TLP current IT... Test current Figure 2 Definitions of electrical characteristics IR Diode_Characteristic_Curve_with_snapback_Bi-directional.svg Datasheet 4 Revision.

Electrical characteristics Table 3 DC characteristics (T A = 2 C, unless otherwise specified) ) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Trigger voltage 2)3) V t 6 V Holding voltage 4) V h.8 6.7 8. V I R = ma Reverse current I R < 3 na V R =. V Table 4 AC characteristics (T A = 2 C, unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Line capacitance C L.8 pf V R = V, f = MHz.8 V R = V, f = GHz Table ESD and Surge characteristics (T A = 2 C, unless otherwise specified) ) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Clamping voltage ) V CL 7. V I TLP = 6 A, t p = ns 9 I TLP = 3 A, t p = ns Clamping voltage 6) 6 I PP = A, t p = 8/2 µs 7. I PP = A, t p = 8/2 µs Dynamic resistance ) R DYN. Ω t p = ns Device is electrically symmetrical 2 Verified by design 3 Voltage forced 4 Current forced Please refer to Application Note AN2[]. TLP parameters: Z = Ω, t p = ns, t r =.6 ns. 6 Stress pulse: 8/2μs current waveform according to IEC6-4- Datasheet Revision.

Typical characteristic diagrams 3 Typical characteristic diagrams Note: T A = 2 C, unless otherwise specified -6-7 -8 I R [A] -9 - - -2-3 - -4-3 -2-2 3 4 V R [V] Figure 3 Reverse leakage current: I R = f(v R ) 8 7 6 C L [pf] 4 3 2 - -4-3 -2-2 3 4 V R [V] Figure 4 Line capacitance: C L = f(v R ), f = MHz Datasheet 6 Revision.

Typical characteristic diagrams 2 Scope: 6 GHz, 2 GS/s 2 V CL [V] V CL-max-peak = 2 V V CL-3ns-peak = 4 V - 2 3 4 t p [ns] Figure Clamping voltage (ESD): V CL = f(t), 8 kv positive pulse according to IEC6-4-2 Scope: 6 GHz, 2 GS/s - V CL [V] - - -2 V CL-max-peak = -9 V V CL-3ns-peak = -4 V -2 2 3 4 t p [ns] Figure 6 Clamping voltage (ESD): V CL = f(t), 8 kv negative pulse according to IEC6-4-2 Datasheet 7 Revision.

Typical characteristic diagrams 4 3 Scope: 6 GHz, 2 GS/s V CL [V] 3 2 2 - V CL-max-peak = 33 V V CL-3ns-peak = V 2 3 4 t p [ns] Figure 7 Clamping voltage (ESD): V CL = f(t), kv positive pulse according to IEC6-4-2 Scope: 6 GHz, 2 GS/s V CL [V] - - - -2-2 -3-3 -4 V CL-max-peak = -3 V V CL-3ns-peak = -6 V 2 3 4 t p [ns] Figure 8 Clamping voltage (ESD): V CL = f(t), kv negative pulse according to IEC6-4-2 Datasheet 8 Revision.

Typical characteristic diagrams 3 2 ESD24-B-W2 R DYN 2. 2 R DYN =. Ω 7. I TLP [A] - 2. -2. Equivalent V IEC [kv] - - - -7. -2 R DYN =. Ω - -2-2. -3 - - -8-6 -4-2 2 4 6 8 V TLP [V] Figure 9 Clamping voltage (TLP): I TLP = f(v TLP ) [] Datasheet 9 Revision.

Typical characteristic diagrams 6 4 3 2 I PP [A] - -2-3 -4 - -6 - - V CL [V] Figure Clamping voltage (Surge): I PP = f(v CL ) [] Datasheet Revision.

Typical characteristic diagrams Insertion Loss ( S 2 ) [db] 2 ESD24-B-W2 3.. Frequency [GHz] Figure Insertion loss vs. frequency in a Ω system Datasheet Revision.

Package information 4 Package information 4. WLL-2-3 package BOTTOM VIEW.28±.3.±..24±.2.8±.3.36 (.9) 2.7±.2 ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 28 & PROJECTION METHOD [ ] Figure 2 WLL-2-3 package outline (dimension in mm).37.8.37.2 STENCIL THICKNESS <8UM.3.37.2.22.29 STENCIL THICKNESS 8UM copper solder mask stencil apertures ALL DIMENSIONS ARE IN UNITS MM Figure 3 WLL-2-3 footprint (dimension in mm), recommendation for Printed Circuit Board Assembly see [2] 4 2.2.67 8.3 ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 28 & PROJECTION METHOD [ ] Figure 4 WLL-2-3 packing (dimension in mm) Marking on pad-side 2 Type code Type code 2 Figure WLL-2-3 marking example (see Table ) Datasheet 2 Revision.

References References [] Infineon AG - Application Note AN2: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendation for Printed Circuit Board Assembly of Infineon WLL Packages http://www.infineon.com/packageinformation_wll [3] Infineon AG - Application Note AN392: TVS Diodes in ChipScalePackage reduce size and save cost Revision history Revision history: Rev..9., 27-2- Page or Item Subjects (major changes since previous revision) Revision., All Final datasheet Datasheet 3 Revision.

Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition Published by Infineon Technologies AG 8726 Munich, Germany 27 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-izp47496342 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury