TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2615

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2615 2SK2615 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain source ON resistance : R DS (ON) = 0.23 Ω (typ.) High forward transfer admittance : Y fs = 2.0 S (typ.) Low leakage current : I DSS = 100 μa (max) (V DS = 60 V) Enhancement mode : V th = 0.8 to 2.0 V (V DS = 10 V, I D = 1 ma) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain source voltage V DSS 60 V Drain gate voltage (R GS = 20 kω) V DGR 60 V Gate source voltage V GSS ±20 V Drain current DC (Note 1) I D 2 Pulse (Note 1) I DP 6 A Drain power dissipation P D 0.5 W Drain power dissipation (Note 2) P D 1.5 W Channel temperature T ch 150 C Storage temperature range T stg 55 to 150 C Note 1: Ensure that the channel temperature does not exceed 150 C. JEDEC JEITA TOSHIBA 2-5K1B Weight: 0.05 g (typ.) Note 2: Mounted on a ceramic substrate (25.4 mm 25.4 mm 0.8 mm) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R th (ch a) 250 C / W This transistor is an electrostatic-sensitive device. Please handle with caution. Marking Part No. (or abbreviation code) Note 4: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Z A Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 1

Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, V DS = 0 V ±10 μa Drain cut off current I DSS V DS = 60 V, V GS = 0 V 100 μa Drain source breakdown voltage V (BR) DSS I D = 10 ma, V GS = 0 V 60 V Gate threshold voltage V th V DS = 10 V, I D = 1 ma 0.8 2.0 V Drain source ON resistance R DS (ON) VGS = 4 V, ID = 1 A 0.33 0.44 VGS = 10 V, ID = 1 A 0.23 0.30 Ω Forward transfer admittance Y fs V DS = 10 V, I D = 1 A 1.0 2.0 S Input capacitance C iss 150 Reverse transfer capacitance C rss V DS = 10 V, V GS = 0 V, f = 1 MHz 25 pf Output capacitance C oss 70 Rise time t r 25 Switching time Turn on time t on 30 Fall time t f 50 ns Turn off time t off 150 Total gate charge (gate source plus gate drain) Q g 6.0 Gate source charge Q gs V DD 48 V, V GS = 10 V, I D = 2 A 4.6 Gate drain ( miller ) Charge Q gd 1.4 nc Source Drain Ratings and Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) I DR 2 A I DRP 6 A Forward voltage (diode) V DSF I DR = 2 A, V GS = 0 V 1.5 V Reverse recovery charge Q rr di DR / dt = 50 A / μs 40 nc Reverse recovery time t rr I DR = 2 A, V GS = 0 V 100 ns 2

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