MOSFET OptiMOS TM 5PowerTransistor,1V SuperSO8 Features OptimizedforhighperformanceSMPS,e.g.sync.rec. 1%avalanchetested Superiorthermalresistance Nchannel QualifiedaccordingtoJEDEC 1) fortargetapplications Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61491 1 8 3 4 7 6 5 4 3 5 6 7 1 8 Table1KeyPerformanceParameters Parameter Value Unit VDS 1 V RDS(on),max 7. mω ID 8 A Qoss 41 nc QG(V..1V) 3 nc S 1 S S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks PGTDSON8 7N1N5 1) JSTD and JESD 1 Rev..,1697
OptiMOS TM 5PowerTransistor,1V TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Package Outlines....................................................................... 1 Revision History........................................................................ 1 Trademarks........................................................................... 1 Disclaimer............................................................................ 1 Rev..,1697
OptiMOS TM 5PowerTransistor,1V 1Maximumratings atta=5 C,unlessotherwisespecified TableMaximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID Pulsed drain current ) ID,pulse 3 A TC=5 C 8 51 14 A VGS=1V,TC=5 C VGS=1V,TC=1 C VGS=1V,TA=5 C,RthJA=5K/W 1) Avalanche energy, single pulse 3) EAS 73 mj ID=5A,RGS=5Ω Gate source voltage VGS V Power dissipation Ptot Operating and storage temperature Tj,Tstg 55 15 C 83.5 W TC=5 C TA=5 C,RthJA=5K/W ) IEC climatic category; DIN IEC 681: 55/15/56 Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case, bottom Thermal resistance, junction case, top RthJC.9 1.5 K/W RthJC K/W Device on PCB, 6 cm cooling area 1) RthJA 5 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. ) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 3 Rev..,1697
OptiMOS TM 5PowerTransistor,1V 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 1 V VGS=V,ID=1mA Gate threshold voltage VGS(th). 3. 3.8 V VDS=VGS,ID=5µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=1V,VGS=V,Tj=5 C VDS=1V,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 1 na VGS=V,VDS=V Drainsource onstate resistance RDS(on) 6. 7.6 7. 1. Gate resistance 1) RG 1. 1.5 Ω mω VGS=1V,ID=4A VGS=6V,ID=A Transconductance gfs 38 77 S VDS > ID RDS(on)max,ID=4A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss 1 7 pf VGS=V,VDS=5V,f=1MHz Output capacitance 1) Coss 34 44 pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance 1) Crss 16 8 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 13 ns Rise time tr 5 ns Turnoff delay time td(off) 4 ns Fall time tf 6 ns VDD=5V,VGS=1V,ID=4A, RG,ext=3Ω VDD=5V,VGS=1V,ID=4A, RG,ext=3Ω VDD=5V,VGS=1V,ID=4A, RG,ext=3Ω VDD=5V,VGS=1V,ID=4A, RG,ext=3Ω Table6Gatechargecharacteristics ) Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Gate to source charge Qgs 1 nc VDD=5V,ID=4A,VGS=to1V Gate charge at threshold Qg(th) 6 nc VDD=5V,ID=4A,VGS=to1V Gate to drain charge 1) Qgd 6 1 nc VDD=5V,ID=4A,VGS=to1V Switching charge Qsw 11 nc VDD=5V,ID=4A,VGS=to1V Gate charge total 1) Qg 3 38 nc VDD=5V,ID=4A,VGS=to1V Gate plateau voltage Vplateau 4.8 V VDD=5V,ID=4A,VGS=to1V Gate charge total, sync. FET Qg(sync) 6 nc VDS=.1V,VGS=to1V Output charge 1) Qoss 41 55 nc VDD=5V,VGS=V 1) Defined by design. Not Subject to production test. ) See Gate charge waveforms for parameter definition 4 Rev..,1697
OptiMOS TM 5PowerTransistor,1V Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continuous forward current IS 76 A TC=5 C Diode pulse current IS,pulse 3 A TC=5 C Diode forward voltage VSD.9 1.1 V VGS=V,IF=4A,Tj=5 C Reverse recovery time 1) trr 53 16 ns VR=5V,IF=4A,diF/dt=1A/µs Reverse recovery charge 1) Qrr 89 179 nc VR=5V,IF=4A,diF/dt=1A/µs 1) Defined by design. Not Subject to production test. 5 Rev..,1697
OptiMOS TM 5PowerTransistor,1V 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 1 Diagram:Draincurrent 9 8 8 7 6 Ptot[W] 6 4 ID[A] 5 4 3 1 5 5 75 1 15 15 175 TC[ C] Ptot=f(TC) 5 5 75 1 15 15 175 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 1 µs 1 1 µs 1.5 ID[A] 1 1 1 µs 1 ms 1 ms ZthJC[K/W] 1 1..1.5. 1 DC 1.1 single pulse 1 1 1 1 1 1 1 1 1 3 VDS[V] ID=f(VDS);TC=5 C;D=;parameter:tp 1 3 1 6 1 5 1 4 1 3 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 6 Rev..,1697
OptiMOS TM 5PowerTransistor,1V Diagram5:Typ.outputcharacteristics 3 Diagram6:Typ.drainsourceonresistance 14 8 1 V 1 5 V 4 7 V 1 5.5 V 6 V ID[A] 16 1 6 V RDS(on)[mΩ] 8 6 7 V 1 V 8 5.5 V 4 4 5 V..5 1. 1.5..5 3. VDS[V] ID=f(VDS);Tj=5 C;parameter:VGS 4 8 1 16 4 8 3 ID[A] RDS(on)=f(ID);Tj=5 C;parameter:VGS Diagram7:Typ.transfercharacteristics 3 Diagram8:Typ.forwardtransconductance 1 8 4 8 ID[A] 16 gfs[s] 1 4 8 4 15 C 5 C 4 6 8 VGS[V] ID=f(VGS); VDS > ID RDS(on)max;parameter:Tj 4 6 8 1 ID[A] gfs=f(id);tj=5 C 7 Rev..,1697
OptiMOS TM 5PowerTransistor,1V Diagram9:Drainsourceonstateresistance 14 Diagram1:Typ.gatethresholdvoltage 5 1 4 1 RDS(on)[mΩ] 8 6 max typ VGS(th)[V] 3 5 µa 5 µa 4 1 6 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=4A;VGS=1V 6 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances 1 4 Diagram1:Forwardcharacteristicsofreversediode 1 3 5 C 15 C 5 C, max 15 C, max Ciss 1 3 1 C[pF] Coss IF[A] 1 1 1 Crss 1 1 4 6 8 1 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 VSD[V] IF=f(VSD);parameter:Tj 8 Rev..,1697
OptiMOS TM 5PowerTransistor,1V Diagram13:Avalanchecharacteristics 1 Diagram14:Typ.gatecharge 1 9 5 V 5 C 8 1 1 1 C 7 6 V 8 V IAV[A] VGS[V] 5 1 15 C 4 3 1 1 1 1 1 1 1 1 3 tav[µs] IAS=f(tAV);RGS=5Ω;parameter:Tj(start) 1 3 4 Qgate[nC] VGS=f(Qgate);ID=4Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 18 Gate charge waveforms 16 14 VBR(DSS)[V] 1 1 98 96 94 6 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9 Rev..,1697
OptiMOS TM 5PowerTransistor,1V 5PackageOutlines Figure1OutlinePGTDSON8,dimensionsinmm 1 Rev..,1697
OptiMOS TM 5PowerTransistor,1V FigureOutlineFootprint(TDSON8) 11 Rev..,1697
OptiMOS TM 5PowerTransistor,1V RevisionHistory Revision:1697,Rev.. Previous Revision Revision Date Subjects (major changes since last revision). 14116 Release of final version.1 15713 Update Marking. 1697 Update Avalanche Energy TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust15 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 8176München,Germany 16InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1 Rev..,1697