TB6559FG TB6559FG. Full-Bridge DC Motor Driver IC. Features TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic

Similar documents
TB6559FG TB6559FG. Full-Bridge DC Motor Driver IC. Features TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic

TB6568KQ. Block Diagram (application circuit example) Pin Functions

TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62214AFG

7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol. Note. V CC V IN V OUT I IK I OK I OUT I CC P D T stg.

TBD62387APG, TBD62387AFNG

TBD62308AFAG TBD62308AFAG. TOSHIBA BiCD Integrated Circuit Silicon Monolithic. 4channel Low active high current sink type DMOS transistor array

TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6633FNG/AFNG

TB6561FG TB6561FG. Dual Full-Bridge Driver IC for DC Motors. Features TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic

TD62083AFNG,TD62084AFNG

TC7SZ32FE TC7SZ32FE. 1. Functional Description. 2. Features. 3. Packaging Rev.2.0. Start of commercial production.

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8429H, TA8429HQ

TPW1R005PL TPW1R005PL. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev Toshiba Corporation

(Note 1), (Note 2) (Note 1) (Note 1) (Silicon limit) (T c = 25 ) (t = 1 ms) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829

TB6612FNG Usage considerations

TCK106AF, TCK107AF, TCK108AF

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 -π-mos V) 2SK2963

LDO Regulators Glossary

TC7SB3157CFU TC7SB3157CFU. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment. 5. Marking Rev.4.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009

SSM6J507NU SSM6J507NU. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev Toshiba Corporation

(Note 1,2) (Note 1,3) (Note 1) (Silicon limit) (t = 1 ms) (T c = 25 ) (Note 4)

TA78L005AP,TA78L006AP,TA78L007AP,TA78L075AP,TA78L008AP, TA78L009AP,TA78L010AP,TA78L012AP,TA78L132AP, TA78L015AP,TA78L018AP,TA78L020AP,TA78L024AP

TBD62083APG, TBD62083AFG, TBD62083AFNG, TBD62083AFWG TBD62084APG, TBD62084AFG, TBD62084AFNG, TBD62084AFWG

(Note 1) (Note 1) (Note 2) (Note 1) (Note 1)

TC7W04FU, TC7W04FK TC7W04FU/FK. 3 Inverters. Features. Marking TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TB6552FNG, TB6552FTG

TA75W01FU TA75W01FU. Dual Operational Amplifier. Features Pin Connection (Top View)

TK4P60DB TK4P60DB. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev.1.0. Silicon N-Channel MOS (π-mos )

TC7MBL3245AFT, TC7MBL3245AFK

ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG

SSM3K357R SSM3K357R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.2.0. Silicon N-Channel MOS.

SSM3K35CTC SSM3K35CTC. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.3.0. Silicon N-Channel MOS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S14F, TC7S14FU

SSM6N55NU SSM6N55NU. 1. Applications. 2. Features. 3. Packaging and Pin Configuration Rev.2.0. Silicon N-Channel MOS

SSM3K339R SSM3K339R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.1.0. Silicon N-Channel MOS

Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1036F

SSM3J356R SSM3J356R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.3.0. Silicon P-Channel MOS (U-MOS )

Ultra low quiescent current, Fast Load Transient 300 ma CMOS Low Drop-Out Regulator in ultra small package

TC75W57FU, TC75W57FK

3A, 8 mω Ultra Low On resistance Load Switch IC with Reverse Current Blocking and Thermal Shutdown function

TC74HC14AP,TC74HC14AF

TA7291P, TA7291S/SG, TA7291F/FG

TC74AC04P, TC74AC04F, TC74AC04FT

TC4069UBP, TC4069UBF, TC4069UBFT

TA78M05F,TA78M06F,TA78M08F,TA78M09F,TA78M10F TA78M12F,TA78M15F,TA78M18F,TA78M20F,TA78M24F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2615

TC4001BP, TC4001BF, TC4001BFT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK mw

SSM3K341R SSM3K341R. 1. Applications. 2. Features. 3. Packaging and Pin Assignment Rev.5.0. Silicon N-channel MOS (U-MOS -H)

SSM3J118TU SSM3J118TU. High-Speed Switching Applications. Absolute Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TA58M05F,TA58M06F,TA58M08F,TA58M09F TA58M10F,TA58M12F,TA58M15F

TC74VHC08F, TC74VHC08FT, TC74VHC08FK

TC7S04FU. Inverter. Features. Absolute Maximum Ratings (Ta = 25 C) TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240

TC7SBL66CFU, TC7SBL384CFU

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5S15U ~ TAR5S50U

TC74VHCT74AF, TC74VHCT74AFT

TC74HC00AP,TC74HC00AF,TC74HC00AFN

TC75S56F, TC75S56FU, TC75S56FE

(Note 1) (Note 1) (Note 2) (Note 3) (Note 4) (t = 10 s) (t = 10 s)

TJ8S06M3L TJ8S06M3L. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev.6.0. Silicon P-Channel MOS (U-MOS )

V Gate-source voltage. ±20 Drain current (DC) (Note 1) A Drain current (pulsed) (Note 1) 99 Power dissipation. (Note 2)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L 2 π MOSV) 2SK2201

TC7W00FU, TC7W00FK TC7W00FU/FK. Dual 2-Input NAND Gate. Features. Marking. Pin Assignment (top view)

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV. DC I D 180 ma Pulse I DP 360

TD62502PG,TD62502FG,TD62503PG,TD62503FG

TC74VCX08FT, TC74VCX08FK

TC7USB40FT TC7USB40FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging and Pin Assignment Rev.2.0. Dual SPDT USB Switch

SSM3K36FS N X SSM3K36FS. High-Speed Switching Applications. Equivalent Circuit (top view) Absolute Maximum Ratings (Ta = 25 C)

74LCX04FT 74LCX04FT. 1. Functional Description. 2. General. 3. Features. 4. Packaging Rev Toshiba Corporation

TC4011BP,TC4011BF,TC4011BFN,TC4011BFT

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2376

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCA8048-H

TCK104G, TCK105G. Load Switch IC with Current Limit function TCK104G,TCK105G. Feature

TA78L05F,TA78L06F,TA78L07F,TA78L08F,TA78L09F,TA78L10F, TA78L12F,TA78L15F,TA78L18F,TA78L20F,TA78L24F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2992

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV. DC I D 180 ma Pulse I DP 360

RN4987 RN4987. Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Equivalent Circuit and Bias Resister Values

Note: The product(s) described herein should not be used for any other application.

TC75S55F, TC75S55FU, TC75S55FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065

TC4584BP, TC4584BF TC4584BP/BF. TC4584B Hex Schmitt Trigger. Pin Assignment. Logic Diagram. Input/Output Voltage Characteristic

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 ) Symbol V RRM I F(DC) I FP. I 2 t. T j T stg TOR

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37FS. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2607

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5SB15 ~ TAR5SB50

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097

TK20A60W TK20A60W. 1. Applications. 2. Features. 3. Packaging and Internal Circuit Rev Toshiba Corporation

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T. P D (Note 2) 700 t = 10s 1250

TC4093BP, TC4093BF TC4093BP/BF. TC4093B Quad 2-Input NAND Schmitt Triggers. Pin Assignment. Logic Diagram

TC7SB66CFU, TC7SB67CFU

HN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)

SSM6K202FE SSM6K202FE. High-Speed Switching Applications Power Management Switch Applications. Absolute Maximum Ratings (Ta = 25 C)

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

Transcription:

TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic Full-Bridge DC Motor Driver IC The is a full-bridge DC motor driver with DMOS output transistors. It uses P-channel MOSFETs on the high side and N-channel MOSFETs on the low side, eliminating the need for a charge pump. The achieves high thermal efficiency. Four operating modes are selectable via IN1 and IN2: clockwise (CW), counterclockwise (CCW), short brake and stop. Features Power supply voltage: 50 V (max) Output current: 2.5 A (max) ow-on resistance (upper and lower sum): 1.3 Ω (typ.) Constant-current or direct PWM Standby mode Clockwise (CW), counterclockwise (CCW), short brake and stop Overcurrent protection Thermal shutdown Weight: 0.50 g (typ.) 1

Block Diagram VREG 15 AERT 11 5 REG Overcurrent Protection Thermal Shutdown IN1 1 7 IN2 SB 16 2 Decoder Timing ogic 9 OUT2 OSC/PWM 14 OSC/PWM 4/12/13 S-GND 3 V ref 8 10 RSA P-GND 2

Pin Functions Pin No Pin Name Functional Description Remarks 1 IN1 Control signal input 1 Apply either a 0-V or 5-V signal. 2 SB Standby pin H: Start, : Standby 3 V ref Supply voltage pin for current control 0 to 3 V: constant-current control 4.5 to 5.5 V: PWM control 4 S-GND Ground 5 Power supply pin (ope) = 10 to 30 V 6 (NC) No connection 7 Output pin 1 Connect to a motor coil pin. 8 RSA Connection pin for an output current detection resistor 9 OUT2 Output pin 2 Connect OUT2 to a motor coil pin. 10 P-GND Power ground 11 AERT Protective operation alert output 5 V: Protective operation 0 V: Normal 12 S-GND Ground 13 S-GND Ground 14 OSC/PWM Connection pin for an external capacitor/pwm input V ref = 0 to 3 V: Connect a capacitor for oscillation V ref = 4.5 to 5.5 V : Input PWM signal 15 VREG 5-V output pin Connect a capacitor between VREG and S-GND. 16 IN2 Control signal input 2 Apply either a 0-V or 5-V signal. Fin Fin Ground Connect Fin to S-GND Absolute Maximum Ratings (T a = 25 C) Characteristics Symbol Rating Unit Supply voltage 50 V Output current I O (Peak) 2.5 (Note 1) I O (Ave) 1.0 A Power dissipation P D 1.4 (Note 2) W Operating temperature T opr 30 to 85 C Storage temperature T stg 55 to 150 C Note 1: The absolute maximum ratings are the limits that must not be exceeded, even for an instant, under worst possible conditions. Note 2: Measured on a 60 mm 30 mm 1.6 mm PCB with a 50% dissipating copper surface. Operating Ranges (T a = 25 C) Characteristics Symbol Rating Unit Supply voltage 10 to 30 V PWM frequency f CK up to 100 khz OSC frequency f OSC up to 500 khz VREG output current VREGout up to 1 ma 3

Electrical Characteristics ( = 24 V, T a = 25 C, unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit I CC1 Stop mode 4 8 Supply current I CC2 CW and CCW modes 4 8 I CC3 Short brake mode 4 8 ma I CC4 Standby mode 1 2 Control circuit Input voltage Hysteresis voltage V INH 2 5.5 V IN 0.2 0.8 V IN (HYS) (Design target only. Not tested in production.) 0.1 V Input current I INH V IN = 5 V 50 75 I IN V IN = 0 V 2 μa OSC/PWM input circuit Input voltage V PWMH 2 VREG V PWM 0.2 0.8 Hysteresis voltage V PWM(HYS) (Design target only. Not tested in production.) Input current 0.5 I PWMH V PWM = 5 V 55 75 I PWM V PWM = 0 V 2 V μa PWM frequency f PWM Duty cycle = 50% 100 khz Minimum clock pulse width t w(pwm) 2 μs Standby circuit Input voltage Hysteresis voltage V INSH 2 5.5 V INS 0.2 0.8 V IN (HYS) (Design target only. Not tested in production.) 0.1 V Input current I INSH V IN = 5 V 50 75 I INS V IN = 0 V 2 μa V ref input circuit Constant current control PWM control V OSC 0 3.0 V PWM 4.5 5.5 V Input current I ref I IN = VREG 1 3 μa Output ON-resistance R on (U + ) I O = 0.2 A 1.3 1.8 I O = 1.5 A 1.3 1.8 Ω Output leakage current Diode forward voltage I (U) = 30 V 0.1 10 I () = 30 V 0.1 10 V F (U) I O = 1.5 A 1.3 1.7 V F () I O = 1.5 A 1.3 1.7 μa V Internal reference voltage VREG VREGout = 1 ma 4.5 5 5.5 V Thermal shutdown temperature T SD (Design target only. Not tested in production.) 160 C Thermal shutdown hysteresis ΔT SD (Design target only. Not tested in production.) 40 C OSC frequency Charge current Discharge current I OSC(+) I OSC( ) V OSC/PWM = 1.5 V (source current) V OSC/PWM = 3.2 V (sink current) -1.05-0.65 3.8 6.0 ma AERT voltage V AERT(H) I AERT = 1 ma 4 VREG 1 V AERT() I AERT = 1 ma 0.5 V

Functional Descriptions Control Input Pins VREG IN1, IN2, SB 100 kω *The circuit diagram is simplified for description. The input voltage ranges of the IN1, IN2, OSC/PWM and SB inputs must be as follows. These inputs are CMOS- and TT-compatible, and have a hysteresis of 0.2 V (typ.). V INH : 2 to 5.5 V V IN : GND to 0.8 V The PWM input frequency should be 100 khz or less. In Standby mode, all circuits are turned off, except the standby and 5-V circuits. To bring the device out of Standby mode, IN1 and IN2 must be set ow once (Stop mode); for an operating mode must be selected after the power supply becomes stable. OSC/PWM Input Pin SW1 VREG OSC/PWM SW2 100 kω *The circuit diagram is simplified for description. Either constant-current or direct PWM is selectable according to the voltage of the V ref input (See the Pin Functions table). SW1 and SW2 in the above diagram are controlled by the V ref voltage. Constant current PWM For constant-current PWM, V ref must be between 0 V and 3 V (SW1: ON, SW2: OFF) and a capacitor must be connected between OSC/PWM and ground. Direct PWM For direct PWM, V ref must be between 4.5 V and 5.5 V (SW1: OFF, SW2: ON). When a PWM signal with an amplitude between 0 V and 5 V is applied to the OSC/PWM input, the and OUT2 levels change accordingly, resulting in an alternating sequence of CW/CCW and short brake. 5

Input/Output Functions Input V ref IN1 IN2 SB PWM/OSC I O (100%) (typ.) Output OUT2 Mode H H H Capacitor Short brake H H Capacitor Vref 6 RSA Constant-current chopping CCW Short brake OSC 0 to 3 V H H Capacitor Vref 6 RSA Constant-current chopping CW Short brake H Capacitor OFF (Hi-Z) Stop X X Capacitor OFF (Hi-Z) Standby H H H H Short brake H H H H CCW Short brake PWM 4.5 to 5.5 V H H H H CW Short brake H H OFF (Hi-Z) Stop X X H OFF (Hi-Z) Standby Note: X = Don t care 6

Output Operation Control mode selection Either constant-current or direct PWM control can be selected by the V ref input voltage as follows: Constant-current PWM control: V ref = 0 to 3 V Direct PWM control: V ref = 4.5 to 5.5 V The constant-current feature is disabled in direct PWM mode. In either mode, the motor operating mode changes between CW/CCW and short brake alternately. To eliminate shoot-through current that flows from supply to ground due to the simultaneous conduction of high-side and low-side transistors in the bridge output, a dead time of 300 ns (design target only) is generated in the IC when transistors switch from on to off, or vice versa. The shoot-through protection permits a synchronous rectification PWM operation without controlling the dead time externally. A dead time is also provided internally when the motor operation mode switches between CW and CCW, and between CW (CCW) and short brake, thereby eliminating the need for external dead time insertion. M M M RSA RSA RSA PWM ON t1 PWM ON OFF t2 = 300 ns (typ.) PWM OFF t3 M M RSA RSA PWM OFF ON t4 = 300 ns (typ.) PWM ON t5 Output voltage waveform () t1 t3 t5 GND t2 t4 7

Constant-Current Regulation When the V ref voltage is kept constant, the constant current regulator keeps the output current constant by using a peak current detection technique. (1) Constant-current chopping When V RSA reaches the reference voltage (V ref ), the regulator enters Discharge mode. After four cycles of CK, an internal clock generated by OSC, the regulator moves from Discharge mode to Charge mode. Coil current Vref/6 V RSA OSC Internal clock Vref/6 Coil current V RSA Discharge Charge Discharge GND (2) Changing the predefined current (during deceleration) When V RSA reaches the reference voltage (V ref /6), the regulator enters Discharge mode. Four CK cycles later, the regulator exits Discharge mode and enters Charge mode. If V RSA > V ref /6 when it enters Charge mode, however, it then reenters Discharge mode. Four CK cycles later, V RSA is again compared against V ref /6. If V RSA < V ref /6, the regulator enters and remains in Charge mode until V RSA reaches V ref /6. OSC Internal clock Vref/6 V RSA GND Discharge Charge Discharge Charge 8

(3) Changing the predefined current (during acceleration) Even when the reference voltage is increased, the regulator remains in Discharge mode for four CK cycles and then it enters Charge mode. OSC Internal clock Vref/6 Coil current V RSA Discharge Charge Discharge GND The average current value becomes lower than the set current value because of the peak current detection method. It should be noted that the average current value changes, depending on the motor characteristics. Calculation of the Internal Oscillation Frequency The OSC oscillation frequency can be approximated by the following equation: f OSC [Hz] = (0.445 10-3 ) / C OSC [F] Reference Voltage Generator In constant-current mode, the peak current is determined by the V ref voltage, as follows: I O = V ref /RSA 1/6 [A] Control circuit M OUT2 I O 1/6 Vref RSA I O 9

Internal Constant-Voltage (5 V) Circuit VREG The includes a 5-V power supply for control circuit biasing. For oscillation prevention, a capacitor should be connected between VREG and S-GND. Although VRGE can be used to control the inputs to the, the maximum load current should be limited to 1 ma. The has power monitoring circuitry that turns off the output when VREG falls below 6.0 V (design target only). With a hysteresis of 0.3 V (design target only), the output is turned back on when VREG reaches 6.3 V (design target only) again. Output Circuit (OUT2) RSA The uses P-channel MOS transistors on the high side and N-channel MOS transistors on the low side. The output ON-resistance (R on) is 1.3 Ω (high-side and low-side sum) The switching characteristics of the output transistors are shown below. PWM input t ph t ph Output voltage (, OUT2) 10% 90% 50% 90% 50% 10% t r t f Switching Characteristics Item Typical Value Unit t ph 750 t ph 1000 t r 100 t f 150 Dead time 700 ns 10

Power Supply supplies a voltage to the output circuit and the internal 5-V circuit. The operating voltage range is: (opr.) = 10 to 30 V IN1, IN2, and SB should be set ow at power-on. (In direct PWM mode, OSC/PWM should also be set ow.) GND Section The has two separate grounds: S-GND for the control circuitry and P-GND for the output circuitry. S-GND and P-GND should be short-circuited at a location as close to the as possible. AERT Circuit When either the thermal shutdown or overcurrent protection circuit is activated, the AERT output goes High (CMOS output). When the AERT pin is changed from low to high or vice versa, its output signal may become unstable, causing chattering or noise pulses. To avoid such instability, it is recommended to insert an RC filter to the output line. Normal operation: ow Protective operation: High Thermal Shutdown (TSD) Circuit The incorporates a thermal shutdown circuit. When the junction temperature (T j ) exceeds 160 C (typ.), the output transistors are turned off. The output transistors are automatically turned on when the junction temperature cools past the shutdown threshold, which is lowered by a hysteresis of 40 C. The IC has 40 C of temperature hysteresis. T SD = 160 C (design target only) ΔT SD = 40 C (design target only) <Thermal Shutdown> Chip temperature 160 C (typ.) 120 C (typ.) TSD AERT output H 11

Overcurrent Protection Circuit (ISD) <Overcurrent Protection> Output current I IM AERT output H 0 10 μs (typ.) Not detected OFF 50 μs (typ.) OFF 50 μs (typ.) 10 μs (typ.) The allows for the sensing of the current that flows through each output transistor. The currents through each of the output transistors are continually monitored. In the event of an overcurrent in at least one of the transistors, the overcurrent protection circuitry turns all transistors off. The overcurrent protection circuitry incorporates a timer to measure 50 μs (typ.) after the transistors are turned off. After 50 μs, the protection circuitry turns the output transistors back on again automatically. If the overcurrent persists, the device begins cycling into and out of thermal shutdown. To prevent false detection due to glitches, the overcurrent protection circuitry turns off the transistors only when the current exceeds the shutdown threshold for 10 μs or longer. The design target only for current limiting is 5 A (typ.) but has variations between 4.0 to 6.0 A. 12

Typical Characteristics Graphs External Components Symbol Use Recommended Value Remarks C 1 VREG oscillation prevention 0.1 μf to 1.0 μf C 2 Power noise absorption 0.001 μf to 1 μf C 3 Power noise absorption 50 μf to 100 μf 13

Typical Application Examples Direct-PWM Drive Note 4 Fuse 5 V V DD PWM 14 Note 5 11 AERT OSC/PWM C 1 C 2 C 3 15 5 Note 1 VREG 24 V GND PORT1 PORT2 PORT3 1 16 2 IN1 IN2 SB Vref RSA S-GND OUT2 P-GND 7 9 M Note 2 3 8 4/12/13 10 Microcontroller Note 3 5 V Constant-current PWM Drive Note 4 Fuse 5 V V DD PORT1 1 Note 5 11 IN1 AERT C 1 C2 15 5 Note 1 VREG C 3 24 V PORT2 PORT3 16 PORT4 3 0 V to 3 V 2 IN2 SB Vref OUT2 7 9 M Note 2 GND OSC/PWM 14 RSA 8 S-GND 4/12/13 P-GND 10 Microcontroller Note 3 Note 1: A bypass capacitor should be connected between and P-GND and placed as close as possible to the. Note 2: When a capacitor is connected between the motor pins to reduce noise, a resistor should also be inserted to limit the charge current. This capacitor causes the switching loss to increase for PWM control; therefore, this capacitor should not be used, if possible. Note 3: S-GND and P-GND should be short-circuited at a location as close to the as possible. (Same for Fin) Note 4: The capacitor C 1 should be connected to S-GND. Note 5: If there is chattering or noise in the output signal, connect an RC filter to AERT. 14

Usage Precautions Although the contains overcurrent detection circuitry, a large current might abruptly flow through the IC in case of a short-circuit to power supply, a short-circuit to ground or a short-circuit across the load, damaging the device permanently. This possibility should be fully considered in the design of the output, and ground lines. If the device is damaged, a large current might continually flow through the device as a secondary effect. Therefore, Toshiba recommends that a fuse be connected to the power supply line. Install this IC properly. If not, (e.g., installing it in the wrong position), the IC might be broken. If external components are shorted together, the IC might be broken. 15

Package Dimensions Weight: 0.50 g (typ.) 16

Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. 5. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on Handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. (2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 17

Points to Remember on Handling of ICs (1) Over Current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (T j ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor s power supply due to the effect of back-emf. If the current sink capability of the power supply is small, the device s motor power supply and output pins might be exposed to conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-emf into consideration in system design. 18

RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO IABIITY FOR CUSTOMERS' PRODUCT DESIGN OR APPICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARIY HIGH EVES OF QUAITY AND/OR REIABIITY, AND/OR A MAFUNCTION OR FAIURE OF WHICH MAY CAUSE OSS OF HUMAN IFE, BODIY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO IABIITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE REEVANT TERMS AND CONDITIONS OF SAE FOR PRODUCT, AND TO THE MAXIMUM EXTENT AOWABE BY AW, TOSHIBA (1) ASSUMES NO IABIITY WHATSOEVER, INCUDING WITHOUT IMITATION, INDIRECT, CONSEQUENTIA, SPECIA, OR INCIDENTA DAMAGES OR OSS, INCUDING WITHOUT IMITATION, OSS OF PROFITS, OSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND OSS OF DATA, AND (2) DISCAIMS ANY AND A EXPRESS OR IMPIED WARRANTIES AND CONDITIONS REATED TO SAE, USE OF PRODUCT, OR INFORMATION, INCUDING WARRANTIES OR CONDITIONS OF MERCHANTABIITY, FITNESS FOR A PARTICUAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade aw and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO IABIITY FOR DAMAGES OR OSSES OCCURRING AS A RESUT OF NONCOMPIANCE WITH APPICABE AWS AND REGUATIONS. 19