FQA140N10 N-Channel QFET MOSFET 100 V, 140 A, 10 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features 140 A, 100 V, R DS(on) = 10 mω (Max.) @ = 10 V, = 70 A Low Gate Charge (Typ. 0 nc) Low Crss (Typ. 470 pf) 100% Avalanche Tested June 2014 17 D G G D S TO-3PN S Absolute Maximum Ratings T C = 25 C unless otherwise noted. Symbol Parameter FQA140N10 Unit S Drain-Source Voltage 100 V Drain Current - Continuous (T C = 25 C) 140 A - Continuous (T C = 100 C) 99 A M Drain Current - Pulsed (Note 1) 560 A S Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 1500 mj I AR Avalanche Current (Note 1) 140 A E AR Repetitive Avalanche Energy (Note 1) 37.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns P D Power Dissipation (T C = 25 C) 375 W - Derate above 25 C 2.5 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds. 300 C Thermal Characteristics FQA140N10 + θ Thermal Resistance, Junction-to-Case, Max. 0.4 6? + θ Thermal Resistance, Junction-to-Ambient, Max. 40 6? 1
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQA140N10 FQA140N10 TO-3PN Tube N/A N/A 30 units Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa 100 -- -- V ΔBS Breakdown Voltage Temperature I / ΔT J Coefficient D = 250 μa, Referenced to 25 C -- 0.08 -- V/ C SS = 80 V, = 0 V -- -- 1 μa Zero Gate Voltage Drain Current = 64 V, T C = 150 C -- -- 10 μa I GSSF Gate-Body Leakage Current, Forward = 25 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -25 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 μa 2.0 -- 4.0 V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, = 70 A -- 0.008 0.01 Ω g FS Forward Transconductance = 30 V, = 70 A -- 80 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 6100 7900 pf C oss Output Capacitance f = 1.0 MHz -- 2000 2600 pf C rss Reverse Transfer Capacitance -- 420 550 pf Switching Characteristics t d(on) Turn-On Delay Time -- 75 160 ns = 40 V, = 140 A, t r Turn-On Rise Time R G = 25 Ω -- 940 1890 ns t d(off) Turn-Off Delay Time -- 350 710 ns t f Turn-Off Fall Time (Note 4) -- 360 730 ns Q g Total Gate Charge = 64 V, = 140 A, -- 220 285 nc Q gs Gate-Source Charge = 10 V -- 39 -- nc Q gd Gate-Drain Charge (Note 4) -- 114 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current (Note 5) -- -- 140 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 560 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 140 A -- -- 1.5 V t rr Reverse Recovery Time = 0 V, I S = 140 A, -- 140 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/μs -- 730 -- nc Notes: 1.Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.115 mh, I AS = 140 A, = 25 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 140 A, di/dt 300 A/μs, BS, starting T J = 25 C. 4. Essentially independent of operating temperature. 5. Continuous drain current calculated by maximum junction temperature : limited by package. 2
Typical Characteristics 10 2 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10-1 10 0, Drain-Source Voltage [V] 1. 250μ s Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics 10 2 10 0 175 25-55 1. = 40V 2. 250μ s Pulse Test 10-1 2 4 6 8 10, Gate-Source Voltage [V] Figure 2. Transfer Characteristics 30 R DS(ON) [mω ], Drain-Source On-Resistance 25 20 15 10 5 = 10V = 20V Note : T J = 25 R, Reverse Drain Current [A] 10 2 10 0 175 25 1. = 0V 2. 250μs Pulse Test 0 0 100 200 300 400 500 600 700 800 900 10-1 0. 2 0.4 0. 6 0.8 1. 0 1.2 1. 4 1.6 1. 8 2.0 V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pf] 20000 18000 16000 14000 12000 10000 8000 6000 4000 2000 C oss C iss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 = 50V = 80V Note : = 140 A 0 10-1 10 0, Drain-Source Voltage [V] 0 0 40 80 120 160 200 240 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3
Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. = 250 μa 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 70 A 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs. Temperature 150 10 3 10 2 10 0 Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 1 ms 10 ms DC 10 μs 100 μs 2. T J = 175 o C 3. Single Pulse 10-1 10 0 10 2, Drain-Source Voltage [V] 120 90 60 30 Limited by Package 0 25 50 75 100 125 150 175 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z JC (t), Thermal Response [ o C/W] 0.2 0.1 1. Z θ JC (t) = 0.4 /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 10-2 D=0.5 0.05 0.02 0.01 single pulse P DM t 1 t 2 10-5 10-4 10-3 10-2 10-1 10 0 t 1, Square W ave Pulse D uration [sec] Figure 11. Transient Thermal Response Curve 4
12V 200nF I G = const. 3mA 50KΩ Same Type as DUT 300nF V GS 10V Q g Q gs Q gd DUT Charge Figure 12. Gate Charge Test Circuit & Waveform R L 90% R G V 10 DUT 10% t d(on) t r t d(off) tf t on t off Figure 13. Resistive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS - BS I AS R G (t) V 10 DUT (t) t p t p Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms 5
R G DUT I SD Driver + _ Same Type as DUT L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6
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