UT54ACS162245SLV Schmitt CMOS 16-bit Bidirectional MultiPurpose Low Voltage Transceiver Datasheet

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UT54ACS162245SLV Schmitt CMOS 16-bit Bidirectional MultiPurpose Low Voltage Transceiver Datasheet September, 2014 FEATURES Voltage translation -.V bus to 2.5V bus - 2.5V bus to.v bus Cold sparing all pins 0.25μ CMOS Operational environment - Total dose: 00Krad(Si) and 1Mrad(Si) - Single Event Latchup immune High speed, low power consumption Schmitt trigger inputs to filter noisy signals Cold and Warm Spare - all outputs Available QML Q or V processes Standard Microcircuit Drawing 5962-0254 Package: - 48-lead flatpack, 25 mil pitch (.90 x.640), wgt 1.4 Grams DESCRIPTION The 16-bit wide UT54ACS162245SLV MultiPurpose low voltage transceiver is built using Aeroflex s epitaxial CMOS technology and is ideal for space applications. This high speed, low power UT54ACS162245SLV low voltage transceiver is designed to perform multiple functions including: asynchronous two-way communication, Schmitt input buffering, voltage translation, warm and cold sparing. With V DD equal to zero volts, the UT54ACS162245SLV outputs and inputs present a minimum impedance of 1MΩ making it ideal for "cold spare" applications. Balanced outputs and low "on" output impedance make the UT54ACS162245SLV well suited for driving high capacitance loads and low impedance backplanes. The UT54ACS162245SLV enables system designers to interface 2.5 volt CMOS compatible components with. volt CMOS components. For voltage translation, the A port interfaces with the 2.5 volt bus; the B port interfaces with the. volt bus. The direction control (DIRx) controls the direction of data flow. The output enable (OEx) overrides the direction control and disables both ports. These signals can be driven from either port A or B. The direction and output enable controls operate these devices as either two independent 8-bit transceivers or one 16-bit transceiver. LOGIC SYMBOL OE1 (48) G1 OE2 (25) G2 2EN1 (BA) (1) 2EN2 (AB) DIR1 1EN1 (BA) 1EN2 (AB) (47) 1A1 (46) 1A2 (44) 1A (4) 1A4 (41) 1A5 (40) 1A6 (8) 1A7 (7) 1A8 (6) 2A1 (5) 2A2 () 2A (2) 2A4 (0) 2A5 (29) 2A6 (27) 2A7 (26) 2A8 PIN DESCRIPTION Pin Names OEx DIRx xax xbx 11 21 Description Output Enable Input (Active Low) Direction Control Inputs 12 22 (24) (2) 1B1 () 1B2 (5) 1B (6) 1B4 (8) 1B5 (9) 1B6 (11) 1B7 (12) 1B8 (1) 2B1 Side A Inputs or -State Outputs (2.5V Port) Side B Inputs or -State Outputs (.V Port) DIR2 (14) (16) 2B2 2B (17) 2B4 (19) 2B5 (20) 2B6 (22) 2B7 (2) 2B8 1

PINOUTS DIR1 1B1 1B2 1B 1B4 VDD1 1B5 1B6 1B7 1B8 2B1 2B2 2B 2B4 VDD1 2B5 2B6 2B7 2B8 DIR2 48-Lead Flatpack Top View 1 2 4 5 6 48 47 46 45 44 4 OE1 1A1 1A2 1A 1A4 7 42 VDD2 8 41 1A5 9 40 1A6 10 9 11 8 1A7 12 7 1A8 1 6 2A1 14 5 2A2 15 4 16 2A 17 2 2A4 18 1 VDD2 19 20 21 22 2 24 0 2A5 29 2A6 28 27 2A7 26 2A8 25 OE2 powered up first to ensure proper control of output enable (/OEx) and direction control (DIRx). Control of the outputs / OEx and DIRx pins is not guaranteed until V DD2 reaches 1.5 +/ -5%. During normal operation of the device, after power up, insure V DD1 V DD2. Power Up Sequence Users should power up V DD2 before V DD1 because the DIRx and /OEx pins on the UT54ACS162245SLV are powered by V DD2. If V DD1 is powered on first, V DD2 must be powered on within 1 second of V DD1 reaching 1.5V +/-5%. An elevated V DD1 supply current up to 150mA may occur when V DD1 > 1.5V+/5% and V DD2 < 1.5V +/-5%. VDD1 PORTB Enable/ Direction Control Logic Enable/ Direction Control Logic CORE VDD2 PORTA DIR1 OE1 DIR2 OE2 POWER TABLE Port B Port A OPERATION. Volts 2.5 Volts Voltage Translator. Volts. Volts Non Translating 2.5 Volts 2.5 Volts Non Translating FUNCTION TABLE ENABLE OEx DIRECTION DIRx OPERATION L L B Data To A Bus L H A Data To B Bus H X Isolation Power Application Guidelines For proper operation, connect power to all V DD pins and ground all pins (i.e., no floating V DD or supply pins). If V DD1 and V DD2 are not powered up together, then V DD2 should be Warm Spare Once the UT54ACS162245SLV is powered up with V DD1 V DD2, the application may place the device into Warm Spare mode by driving EITHER supply to +/- 0.25V with a maximum 1kΩ impedance between V DDx and. While in Warm Spare, the device places all outputs into a high impedeance state (see DC electrical parameters, Iws). Cold Spare The UT54ACS162245SLV places the device into Cold Spare mode when BOTH supplies are set to +/- 0.25V with a maximum 1KΩ impedance between V DDx and. While in Cold Spare, the device places all outputs into a high impedeance state (see DC electrical parameters, Ics). 2

LOGIC DIAGRAM DIR1 (1) (48) OE1 DIR2 (24) (25) OE2 1A1 (47) 2A1 (6) 1A2 (46) (2) 1B1 2A2 (5) (1) 2B1 () 1B2 (14) 2B2 1A (44) 2A () 2.5V PORT 1A4 1A5 (4) (41) (5) (6) (8) 1B 1B4 1B5. V PORT 2.5V PORT 2A4 2A5 (2) (0) (16) (17) (19) 2B 2B4 2B5. V PORT 1A6 (40) 2A6 (29) (9) 1B6 (20) 2B6 1A7 (8) 2A7 (27) (11) 1B7 (22) 2B7 1A8 (7) 2A8 (26) (12) 1B8 (2) 2B8

OPERATIONAL ENVIRONMENT 1 PARAMETER LIMIT UNITS Total Dose 1.0E5 rad(si) SEL Latchup >11 MeV-cm 2 /mg Neutron Fluence (Note 2) 1.0E14 n/cm 2 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Not tested, inherent to CMOS technology. ABSOLUTE MAXIMUM RATINGS 1 SYMBOL PARAMETER LIMIT (Mil only) UNITS (Note 2) V I/O Voltage any pin -. to V DD1 +. V V DD1 Supply voltage -0. to 4.0 V V DD2 Supply voltage -0. to 4.0 V T STG Storage Temperature range -65 to +150 C T J (Note ) Maximum junction temperature +150 C Θ JC Thermal resistance junction to case 20 C/W I I DC input current ±10 ma P D Maximum power dissipation 1 W Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability and performance. 2. For Cold Spare mode (V DD1 =VSS, V DD2 =VSS), V I/O may be -0.V to the maximum recommended operating level of V DD1 +0.V.. Maximum junction temperature may be increased to +175 o C during burn-in and life test. DUAL SUPPLY OPERATING CONDITIONS SYMBOL PARAMETER LIMIT UNITS V DD1 Supply voltage 2. to.6 V V DD2 Supply voltage 2. to.6 V V IN Input voltage any pin 0 to V DD1 V T C Temperature range -55 to + 125 C 4

DC ELECTRICAL CHARACTERISTICS 1 ( -55 C < T C < +125 C) SYMBOL PARAMETER CONDITION MIN MAX UNIT V T + Schmitt Trigger, positive going threshold 2 V DD from 2. to.6.7v DD V V T - Schmitt Trigger, negative going threshold 2 V DD from 2. to.6.v DD V V H1 Schmitt Trigger range of hysteresis 9 V DD from.0 to.6 0.5 V V H2 Schmitt Trigger range of hysteresis 9 V DD from 2. to 2.7 0.4 V I IN Input leakage current 9 V DD from 2.7 to.6 V IN = V DD or -1 μa I OZ Three-state output leakage current 9 V DD from 2.7 to.6 V IN = V DD or -1 μa I CS Cold sparing input leakage current,11 V IN =.6-5 5 μa V DD = I WS Warm sparing input leakage current,11 V IN = or V DD, V DD1 = 0, V DD2 = V DD or V DD1 = V DD, V DD2 = 0 I OS1 Short-circuit output current 5, 10 V O = V DD or V DD from.0 to.6 I OS2 Short-circuit output current 5, 10 V O = V DD or V DD from 2. to 2.7-5 5 μa -200 200 ma -100 100 ma V OL1 Low-level output voltage 9 I OL = 8mA I OL = 100μA V DD =.0 V OL2 Low-level output voltage 9 I OL = 8mA I OL = 100μA V DD = 2. 0.4 0.2 0.4 0.2 V V V OH1 High-level output voltage 9 I OH = -8mA I OH = -100μA V DD =.0 V OH2 High-level output voltage 9 I OH = -8mA I OH = -100μA V DD = 2. V DD - 0.7 V DD - 0.2 V DD - 0.7 V DD - 0.2 V V 5

DC ELECTRICAL CHARACTERISTICS 1 ( -55 C < T C < +125 C) SYMBOL PARAMETER CONDITION MIN MAX UNIT P total1 Power dissipation 4,6,7 C L = 40pF 6.2 V DD from.0v to.6v mw/ MHz P total2 Power dissipation 4,6,7 C L = 40pF V DD from 2.V to 2.7V MHz I DD Standby Supply Current V DD1 or V DD2 Pre-Rad 25 o C V IN = V DD or V DD =.6V OE = V DD 10 μa Pre-Rad -55 o C to +125 o C OE = V DD 475 μa Post-Rad 25 o C OE = V DD 15 ma C IN Input Capacitance 8 f = 1MHz @ 0V 15 pf V DD from 2.V to.6v C out Output Capacitance 8 f = 1MHz @ 0V 15 pf V DD from 2.V to.6v POR V DD1 & V DD2 Power-On 4,1 V DD1 or V DD2 Zero Volt Offset 250 mv V DD1 and V DD2 Rise-Time 12 500 ms 1. All specifications valid for radiation dose 1E5 rad(si) per MIL-STD-88, Method 1019. 2. Functional tests are conducted in accordance with MIL-STD-88 with the following input test conditions: V IH = V IH (min) + 20%, - 0%; V IL = V IL (max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to V IH (min) and V IL (max).. All combinations of OEx and DIRx 4. Guaranteed by characterization. 5. Not more than one output may be shorted at a time for maximum duration of one second. 6. Power does not include power contribution of any CMOS output sink current. 7. Power dissipation specified per switching output. 8.Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and at frequency of 1MHz and a signal amplitude of 50mV rms maximum. 9.Guaranteed; tested on a sample of pins per device. 10. Supplied as a design limit, but not guaranteed or tested. 11. Zero Volts is defined as 0.0 Volts +/- 0.25Volts. 12. V DD1 and V DD2 Voltage rise is monotonic. 1. Rise time measured from V DD @ Zero Volts to V DD @ greater than 2. V. 6

AC ELECTRICAL CHARACTERISTICS 1 (Port B =. Volt, Port A = 2.5 Volt) (V DD1 =.0V to.6v; V DD2 = 2.V to 2.7V, -55 C < T C < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT t PLH Propagation delay Data to Bus 2 10 ns t PHL Propagation delay Data to Bus 2 10 ns Output enable time OEx to Bus 2 12 ns Output enable time OEx to Bus 2 12 ns Output disable time OEx to Bus high impedance 2 15 ns Output disable time OEx to Bus high impedance 2 15 ns 2 Output enable time DIRx to Bus 2 12 ns 2 Output enable time DIRx to Bus 2 12 ns 2 Output disable time DIRx to Bus high impedance 2 15 ns 2 Output disable time DIRx to Bus high impedance 2 15 ns t SLH Skew between outputs (40pF +/- 10 pf on each output) 0 900 ps t SHL Skew between outputs (40pF +/- 10 pf on each output) 0 900 ps 1. All specifications valid for radiation dose 1E5 rad(si) per MIL-STD-88, Method 1019. 2. DIRx to bus times are guaranteed by design, but not tested. OEx to bus times are tested. Output skew is defined as a comparison of any two output transitions high-to-low vs. high-to-low and low-to-high vs. low-to-high Propagation Delay Input Output t PLH t PHL V DD 0V V OH V OL Enable Disable Times Control Input.V Output Normally Low.V Output Normally High -0.2.2V DD +.2V +0.2.8V DD -.2V V DD 0V.2V DD.8V DD 2.5V Output Normally Low 2.5V Output Normally High -0.2.2V DD +.2V +0.2.7V DD -.2V.2V DD.7V DD 7

AC ELECTRICAL CHARACTERISTICS 1 (Port A = Port B,. Volt Operation) (V DD1 =.0 to.6v; V DD2 =.0V to.6v, -55 C < T C < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT t PLH Propagation delay Data to Bus 2 7.5 ns t PHL Propagation delay Data to Bus 2 7.5 ns Output enable time OEx to Bus 2 10 ns Output enable time OEx to Bus 2 10 ns Output disable time OEx to Bus high impedance 2 12 ns Output disable time OEx to Bus high impedance 2 12 ns 2 Output enable time DIRx to Bus 2 10 ns 2 Output enable time DIRx to Bus 2 10 ns 2 Output disable time DIRx to Bus high impedance 2 12 ns 2 Output disable time DIRx to Bus high impedance 2 12 ns t SLH Skew between outputs (40pF +/- 10 pf on each output) 0 900 ps t SHL Skew between outputs (40pF +/- 10 pf on each output) 0 900 ps 1. All specifications valid for radiation dose 1E5 rad(si) per MIL-STD-88, Method 1019. 2. DIRx to bus times are guaranteed by design, but not tested. OEx to bus times are tested. Output skew is defined as a comparison of any two output transitions high-to-low vs. high-to-low and low-to-high vs. low-to-high Propagation Delay Input t PLH t PHL V DD 0V Output V OH V OL Enable Disable Times Control Input.V Output Normally Low.V Output Normally High -0.2.2V DD +.2V +0.2.8V DD -.2V V DD 0V.2V DD.8V DD 8

AC ELECTRICAL CHARACTERISTICS 1 (Port A = Port B, 2.5 Volt Operation) (V DD1 = 2.V TO 2.7V; V DD2 = 2.V to 2.7V, -55 C < T C < +125 C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT t PLH Propagation delay Data to Bus 2 10 ns t PHL Propagation delay Data to Bus 2 10 ns Output enable time OEx to Bus 2 12 ns Output enable time OEx to Bus 2 12 ns Output disable time OEx to Bus high impedance 2 15 ns Output disable time OEx to Bus high impedance 2 15 ns 2 Output enable time DIRx to Bus 2 12 ns 2 Output enable time DIRx to Bus 2 12 ns 2 Output disable time DIRx to Bus high impedance 2 15 ns 2 Output disable time DIRx to Bus high impedance 2 15 ns t SLH Skew between outputs (40pF +/- 10 pf on each output) 0 900 ps t SHL Skew between outputs (40pF +/- 10 pf on each output) 0 900 ps 1. All specifications valid for radiation dose 1E5 rad(si) per MIL-STD-88, Method 1019. 2. DIRx to bus times are guaranteed by design, but not tested. OEx to bus times are tested. Output skew is defined as a comparison of any two output transitions high-to-low vs. high-to-low and low-to-high vs. low-to-high Propagation Delay Input t PLH t PHL V DD 0V Output VOH V OL Enable Disable Times Control Input 2.5V Output Normally Low 2.5V Output Normally High -0.2.2V DD +.2V +0.2.7V DD -.2V V DD 0V.2V DD.7V DD 9

PACKAGE 5 6 4 6 1. All exposed metalized areas are gold plated over electroplated nickel per MIL-PRF-855. 2. The lid is electrically connected to VSS.. Lead finishes are in accordance with MIL-PRF-855. 4. Lead position and colanarity are not measured. 5. ID mark symbol is vendor option. 6. With solder, increase maximum by 0.00. Figure 1. 48-Lead Flatpack 10

ORDERING INFORMATION UT54ACS162245SLV: SMD 5962 R 0254 01 * * * Lead Finish: (C) = Gold (A) = Solder Case Outline: (X) = 48 lead FP Class Designator: (Q) = Class Q (V) = Class V Device Type (01) = 16-bit MultiPurpose Low Voltage Transceiver Drawing Number: 0254 Total Dose: (R) = 1E5 rad(si) (F) = E5 rad(si) (G) = 5E5 rad(si) (H) = 1E6 rad(si) Federal Stock Class Designator 1. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. 11

UT54ACS162245SLV UT54 *** ****** * * * Lead Finish: (C) = Gold (A) = Solder Screening: (C) = HiRel Temp (P) = Prototype Package Type: (U) = 48-lead FP Part Number: (162245SLV) = 16-bit MultiPurpose Low Voltage Transceiver I/O Type: (ACS)= CMOS compatible I/O Level Aeroflex Core Part Number 1. HiRel Temperature Range flow per Aeroflex Colorado Springs Manufacturing Flows Document. Devices are tested -55C, room temp, and 125C. Radiation neither tested nor guaranteed. 2. Prototype flow per Aeroflex Colorado Springs Manufacturing Flows Document Tested at 25C only. Lead finish is gold only. Radiation neither tested nor guaranteed. 12

Aeroflex Colorado Springs - Datasheet Definition Advanced Datasheet - Product In Development Preliminary Datasheet - Shipping Prototype Datasheet - Shipping QML & Reduced Hi-Rel This product is controlled for export under the Export Administration Regulations (EAR). A license from the U.S. Government is required prior to the export of this product from the United States. www.aeroflex.com/hirel info-ams@aeroflex.com Aeroflex Colorado Springs, Inc. (Aeroflex) reserves the right to make changes to any products and services herein at any time without notice. Consult Aeroflex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aeroflex; nor does the purchase, lease, or use of a product or service from Aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aeroflex or of third parties. Our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused 1