EMIF02-SPK03F2. 2-channel EMI filter and ESD protection for speaker phone. Features. Application. Description. Complies with the following standards

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2-channel EMI filter and ESD protection for speaker phone Datasheet production data Features 2-channel EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering: S21 attenuation, -40 db at 900 MHz Xtalk, in audio band, -60 db Very low PCB space consumption: 0.89 x 1.26 mm Very thin package: 0.6 mm after reflow High efficiency in ESD suppression on input pins (IEC 61000-4-2 level 4) High reliability offered by monolithic integration High reduction of parasitic elements through integration and wafer level packaging Packaged in lead-free Flip Chip Complies with the following standards IEC 61000-4-2 level 4: ±15 kv (air discharge) ±8 kv (contact discharge) Application Mobile phones Portable devices Connectivity devices Description The chip is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering. The is 2-channel, ultra compact, high attenuation filter available in 0.5 mm pitch WLCSP package. Additionally, this filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 30 kv. Figure 1. Figure 2. I1 I2 Pin configuration (bump side) 3 O1 O2 Flip Chip (5 bumps) Functional schematic C C 2 GND L L I1 I2 1 C C A B C O1 O2 June 2012 Doc ID 023219 Rev 1 1/10 This is information on a product in full production. www.st.com 10

Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit V PP ESD discharge IEC 61000-4-2 (1) Air discharge Contact discharge 30 kv I SPK Maximum rms currrent per channel 800 ma T j Maximum junction temperature 125 C T op Operating temperature range -30 to 85 C T stg Storage temperature range -55 to + 150 C 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353, IEC 61000-4-2 standard testing. Figure 3. Electrical characteristics - definitions Symbol Parameter V BR = Breakdown voltage V CL = Clamping voltage I RM = Leakage current @ V V RM = Stand-off voltage I PP = Peak pulse current I R = Breakdown current Rd = Dynamic resistance RM V CL I PP Slope: 1/R d V CL Slope: 1/R d I PP Table 2. Electrical characteristics - values (Tamb = 25 C) Symbol Test conditions Min. Typ. Max. Unit V BR I R = 1 ma 6 V R d tp = 100 ns 0.2 Ω I RM V RM = 3 V per line 0.3 µa R DC_L DC resistance of the inductor 0.07 0.1 Ω C line Vline = 0 V, V OSC = 30 mv, F = 1 MHz 250 pf 2/10 Doc ID 023219 Rev 1

Characteristics Figure 4. Insertion losses versus frequency APLAC 8.21 User: F:Cust# 8463:STMicroelectronics - Tours:AWR Corporation:RP=111 0 S21-10 db -20-30 -40-50 -60 300k 1M 3M 10M 30M 100M 300M 1G 3G F/Hz I1-O1 I2-O2 Figure 5. Analog crosstalk versus frequency APLAC 8.21 User: F:Cust# 8463:STMicroelectronics - Tours:AWR Corporation:RP=111 0 XTalk -10 db -20-30 -40-50 -60-70 300k 1M 3M 10M 30M 100M 300M 1G 3G F/Hz I1-O2 Doc ID 023219 Rev 1 3/10

Characteristics Figure 6. Audio band analog crosstalk Figure 7. Clamping voltage V CL versus peak pulse current I PP for short pulse duration such as ESD surges I pp (A) 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Triangular pulse t P = 100 ns Direct and reverse polarity T J initial = 25 C V CL (V) 0 2 4 6 8 10 12 14 16 Note: For further information on the dynamic characteristic see the STMicroelectronics application note AN4022, TVS short pulse R d measurement and correlation with TVS clamping voltage during ESD. 4/10 Doc ID 023219 Rev 1

Characteristics Figure 8. ESD test conditions 2 x -20 db 50 Ω input Figure 9. Output filter ESD response to IEC 61000-4-2 (+30 kv contact discharge) Ix to Ox Doc ID 023219 Rev 1 5/10

Characteristics Figure 10. Output filter ESD response to IEC 61000-4-2 (-30 kv contact discharge) Ix to Ox Figure 11. Total harmonic distortion plus noise 6/10 Doc ID 023219 Rev 1

Ordering information scheme 2 Ordering information scheme Figure 12. Ordering information scheme EMIF yy - xxx zz Fx EMI Filter Number of lines Information x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version Package F = Flip Chip x = 2: lead-free, pitch = 500 µm, bump = 255 µm Doc ID 023219 Rev 1 7/10

Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 13. Package dimensions 500 µm ±10 250 µm ±10 315 µm ±50 650 µm ±65 435 µm 500 µm ±15 1.26 mm ±50 µm 0.89 mm ±50 µm Figure 14. Footprint Figure 15. Marking Copper pad Diameter: 250 µm recommended, 300 µm max. Solder stencil opening: 330 µm recommended Solder mask opening recommendation: 340 µm min. for 315 µm copper pad diameter Dot, ST logo ECOPACK status xx = marking z = manufacturing location yww = datecode (y = year ww = week) x y x w z w 8/10 Doc ID 023219 Rev 1

Ordering information Figure 16. Tape and reel specification Dot identifying Pin A1 location 0.22 2.0 4.0 Ø 1.55 1.75 8.0 1.39 3.5 ST xxz yww ST xxz yww ST xxz yww 0.73± 0.05 1.02 4.0 All dimensions are typical values in mm User direction of unreeling Note: More information is available in the application notes: AN1235, IPAD 400 µm Flip Chip: package description and recommendations for use AN1751, EMI filters: recommendations and measurements 4 Ordering information Table 3. Ordering information Order code Marking Package Weight Base qty Delivery mode JX Flip Chip 1.8 mg 5000 Tape and reel 7 5 Revision history Table 4. Document revision history Date Revision Changes 19-Jun-2012 1 Initial release. Doc ID 023219 Rev 1 9/10

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