Cosmic Rays induced Single Event Effects in Power Semiconductor Devices

Cosmic Rays induced Single Event Effects in Power Semiconductor Devices Giovanni Busatto University of Cassino ITALY

Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

Flux of Cosmic Rays in Space J. F. Ziegler, Terrestrial cosmic rays intensities, IBM Journal of R & D, Vol. 42, No. 1, pp. 117-140, 1998

Particles Cascade into the Atmosphere after the Impact of an Energetic Particle J. F. Ziegler et Al., IBM experiments in soft fails in computer electronics, IBM Journal of R & D, Vol. 40, No. 1, pp. 3-18, 1996

Flux of Impacting Energetic Particles at the Sea Level J. F. Ziegler, Terrestrial cosmic rays intensities, IBM Journal of R & D, Vol. 42, No. 1, pp. 117-140, 1998

Radiations Effects IONIZING RADIATION EFFECTS TOTAL DOSE EFFECTS SINGLE EVENT EFFECTS SINGLE SOFT ERRORS SINGLE HARD ERRORS SEU SEFI SEL SEB SEGR

SEE Tests In field experiments are too expensive Accelerators (LinAc or cyclotrons) are used to produce high energy particle beams Typical experiments are performed by using: neutrons and protons heavy ions (Ni, Br, I, Au)

Heavy Ions Irradiation Facilities 16MV TANDEM XTU I.N.F.N. L N L (PD) 15MV TANDEM XTU I.N.F.N. L N S (CT)

Particle Impact on a Power Device DIODE Anode MOSFET Source Gate IGBT Gate Emitter E P+ N - N+ P+ N - N+ N - P+ x N+ Kathode N+ Drain N+ P+ Collector

Anode The Brag Diagram P+ N - 58 Ni 28, 142 MeV N+ Kathode

The Choice of the Impacting Particle Titus et al. Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFET s, IEEE Trans. on Nuclear Science, Vol. 43 n. 2, pp. 533-545, 1996

Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

SEB of DIODES

Typical Test Circuit (Static Characterization) 1MΩ Ionbe beam DUT Vbias C i(t) 50Ω line 50Ω v(t)

Generated Charge Histograms 1700V Diode Diode failed at V SEB =1060V

Current [A] Charge Amplification (Measured Waveforms) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4000V Diode 100ns -0.5-10 0 10 20 30 40 50 Time [ns] Gerald Soelkner, et al., Charge Carrier Avalanche Multiplication in High- Voltage Diodes Triggered by Ionizing Radiation IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 47, NO. 6, pp. 2365-2372, Dec. 2000

4kV Diode Bias Voltage: 1800V Simulated Particle : 12 C (17MeV) Energy Transfer Peak: 1.2 MeV/μm Range: 17μm Charge Amplification (2D Simulation) E-field[kV/cm] 400 300 200 100 0 T=0 25ps 100ps 150ps 230ps 500ps 1ns 10 18 10 17 10 16 10 15 10 14 10 13 0 50 100 150 200 250 300 350 400 450 Depth [ μm] -3 E-Density [cm ] P + N - N +

4kV Diode Bias Voltage: 1800V Simulated Particle : 12 C (17MeV) Energy Transfer Peak: 1.2 MeV/μm Charge Amplification (2D Simulation) E-field[kV/cm] -3 E-Density [cm ] 400 300 200 100 0 10 18 10 17 10 16 10 15 10 14 10 13 100ps 25ps 150ps 230ps 500ps 1ns 3ns 0 50 100 150 200 250 300 350 400 450 Depth [ μm] 25ps 100ps 150ps 230ps 500ps 1ns 0 50 100 150 200 250 300 350 400 450 Depth [ μm]

Diode Current during a Destructive Impact Bias Voltage: 2200V 30 25 100ns Current [A] 20 15 10 5 0-5 -40 0 40 80 120 160 200 240 Time [ns]

Simulation of a SEB 400 4kV Diode Biasing Voltage: 2200V E-field[kV/cm] 300 200 100 50ps 25ps 75ps 100ps 125ps 150ps Simulated particles: 12 C (17MeV) 0 10 18 0 50 100 150 200 250 300 350 400 450 Depth [ μm] Energy Transfer Peak: 1.2 MeV/μm Range: 17μm -3 E-Density [cm ] 10 17 10 16 10 15 10 14 25ps 50ps 75ps 100ps 125ps 300ps 150ps 10 13 0 50 100 150 200 250 300 350 400 450 Depth [ μm]

Double Injection Phenomenon 400 10 18 E-field[kV/cm] 300 200 100 High: Current Density Carriers Concentration Electric Field 10 17 10 16 10 15 10 14-3 E-Density [cm ] 0 10 13 0 50 100150200250300350400450 Depth [ μm] Impact Ionization

Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

SEE in Power MOSFET SEGR SEB

Test Circuit GPIB Oscilloscope Computer for Statistical Analysis

SEB in Power MOSFET Studied Structures MOSFET DIODE Source Gate Anode Gate Body Body N + N + P _ P _ P + P + N _ N _ N + N + Drain Kathode

MOSFET Behaviour at increasing Voltage Charge [pc] 40 35 30 25 20 Single Event Burn-out Gate Oxide Damage Diode is safe up to 200V Gate leakage 15 current significantly 10 increases 50 100 150 200 Vds,Vnp [V] MOSFET DIODE

Parasitic BJT Activation Source Emitter Gate Body Base N + P _ R P+ P + N _ N + Drain Collector

The effect of the epi-thickness on the BJT Activation

3D Simulation of Potentially Destructive Impact 200V MOSFET V DS = 100V V GS = 0V Simulated Particle: 79 Br (236MeV) Range: 34μm

3D Simulation of Potentially Destructive Impact Holes Concentration Electric Field -3 Log (Hole Conc.) [cm ] 19.2 16.8 14.4 12.0 9.59 7.19 4.79 2.4 0 Elec tric Field [V/c m] 5.00x10 5 4.38x10 5 3.75x10 5 3.12x10 5 2.55x10 5 1.88x10 5 1.25x10 5 6.25x10 4 0 Drain Current

3D Simulation of Potentially Destructive Impact Holes Concentration Electric Field -3 Log (Hole Conc.) [cm ] 19.2 16.8 14.4 12.0 9.59 7.19 4.79 2.4 0 Elec tric Field [V/c m] 5.00x10 5 4.38x10 5 3.75x10 5 3.12x10 5 2.55x10 5 1.88x10 5 1.25x10 5 6.25x10 4 0 Drain Current

3D Simulation of Potentially Destructive Impact Electric Field (35ps)

SEGR in Power MOSFET SEGR

Mean Charge Generated in a 200V MOSFET and in Corresponding Diode 40 V GS =0 Charge [pc] 35 30 25 20 Gate oxide damage is evidenced by the increase of Gate leakege current, IGSS 15 10 50 100 150 200 Vds,Vnp [V] MOSFET DIODE

3D Simulation of an Impact accompanied by Gate Damage 200V MOSFET V DS = 60V V GS = 0V Simulated Particle: 79 Br (236MeV) Range: 34μm

3D Simulation of an Impact accompanied by Gate Damage Electric Field 200V MOSFET V DS = 60V V GS = 0V

3D Simulation of an Impact accompanied by Gate Damage Holes Concentration 200V MOSFET V DS = 60V V GS = 0V

SEGR Conceptual Model J. R. Brews, et. Al. A Conceptual model for SEGR in Power MOSFET s, IEEE TRANS. ON NUCLEAR SCIENCE, VOL. 40, NO. 6, DECEMBER 1993

Outline Introduction Cosmic rays in Space Cosmic rays at Sea Level Radiation Effects Single Event Tests Irradiation Facilities Particles beam to be used SEB in Power Diodes SEE in Power MOSFETs: SEB SEGR SEB in IGBTs Conclusions

SEB in IGBTs Emettitore Gate N + P _ P + N _ P + Collettore

Emettitore SEB in IGBTs Kathode Gate Gate N + P _ P + R P+ N _ P + Collettore Anode

SEB in IGBTs (2D Simulation) W. Kaindl, et. Al. Cosmic Radiation-Induced Failure Mechanism of High Voltage IGBT, Proc. of the 17th ISPSD, May 23-26, 2005, Santa Barbara, CA

Conclusions Main phenomena observed during the impact with energetic particles have been presented In SEB phenomena the interaction between Charge and Electric Field (double injection) plays a relevant role in triggering electrical instabilities In MOSFET its effects are enhanced by parasitic BJT activation In IGBT the presence of two parasitic BJT makes the device even more subject to SEB In SEGR phenomena charge motion during the impact causes the electric field across the oxide to increase and causes damages to it more theoretical work must be developed to better understand the formation of the damages to the gate oxide

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