SiGe Bipolar 3G/3.5G/4G Single-Band LNA BGA711N7 for LTE Applications Supporting Band 3 and 33 with High Gain of 18dB Application Note AN353 Revision: Rev. 1.0 RF and Protection Devices
Application Note AN353 Revision History: Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN353, Rev. 1.0 2 / 27
Table of Content BGA711N7 Introduction 1 Introduction... 4 1.1 About 3G and 4G Applications... 4 1.2 Applications... 6 1.3 Infineon LNAs for 3G and 4G Applications... 7 2 BGA711N7 Overview... 10 2.1 Features... 10 2.2 Description... 10 3 Application Circuit and Performance Overview... 13 3.1 Summary of Measurement Results... 13 3.2 BGA711N7 as LTE LNA for Band 3 and Band 33 (1805-1920 MHz)... 15 3.3 Schematics and Bill-of-Materials... 16 4 Measurement Graphs... 17 5 Evaluation Board and Layout Information... 25 6 Authors... 26 7 Remark... 26 List of Figures Figure 1 Example of Application Diagram of a 3-band RF front-end for 3G and 4G systems.... 6 Figure 2 BGA711N7 in TSNP-7-1... 10 Figure 3 Equivalent Circuit of BGA711N7... 11 Figure 4 Package and pin connections of BGA711N7... 11 Figure 5 Schematics of the BGA711N7 Application Circuit... 16 Figure 6 Insertion Power Gain (Narrowband) of the BGA711N7 for Band-3 and Band-33 Applications... 17 Figure 7 Insertion Power Gain (Wideband) of the BGA711N7 for Band-3 and Band-33 Applications... 17 Figure 8 Noise Figure of the BGA711N7 for Band-3 and Band-33 Applications... 18 Figure 9 Input Matching of the BGA711N7 for Band-3 and Band-33 Applications... 18 Figure 10 Input Matching (Smith Chart) of the BGA711N7 for Band-3 and Band-33 Applications... 19 Figure 11 Output Matching of the BGA711N7 for Band-3 and Band-33 Applications... 19 Figure 12 Output Matching (Smith Chart) of the BGA711N7 for Band-3 and Band-33 Applications... 20 Figure 13 Reverse Isolation of the BGA711N7 for Band-3 and Band-33 Applications... 20 Figure 14 Stability K-factor of the BGA711N7 for Band-3 and Band-33 Applications... 21 Figure 15 Stability Mu1-factor of the BGA711N7 for Band-3 and Band-33 Applications... 21 Figure 16 Stability Mu2-factor of the BGA711N7 for Band-3 and Band-33 Applications... 22 Figure 17 Input 1dB compression point of the BGA711N7 for Band-3 and Band-33 Applications (HG)... 22 Figure 18 Input 1dB compression point of the BGA711N7 for Band-3 and Band-33 Applications (LQ)... 23 Figure 19 Input 3 rd interception point of the BGA711N7 for Band-3 and Band-33 Applications (HG)... 23 Figure 20 Input 3 rd interception point of the BGA711N7 for Band-3 and Band-33 Applications (LG)... 24 Figure 21 Photo Picture of Evaluation Board (overview),... 25 Figure 22 Photo Picture of Evaluation Board (detailed view)... 25 Figure 23 PCB layer stack... 25 List of Tables Table 1 LTE/WCDMA Band Assignment... 4 Table 2 LTE Band Assignment... 5 Table 3 Infineon Product Portfolio of LNAs for new LTE Applications... 8 Table 4 Infineon Product Portfolio of LNAs for 3G and 4G Applications... 8 Table 5 Pin Assignment of BGA711N7... 12 Table 6 Truth Table of BGA711N7... 12 Table 7 Electrical Characteristics at VCC = 2.8 V (at room temperature)... 13 Table 8 Electrical Characteristics at VCC = 2.8 V (at room temperature)... 14 Table 9 Bill-of-Materials... 16 Application Note AN353, Rev. 1.0 3 / 27
Introduction 1 Introduction 1.1 About 3G and 4G Applications Recently, demand for wireless data service is growing faster than ever before. Starting from the first 3G technology, Universal Mobile Telecommunications System (LTE), also known as Wideband Code Division Multiple Access (WCDMA) to the 3.5G technologies, High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and the combined technology HSPA and HSPA+, the wireless data rate through mobile phone networks increase dramatically. Ever since the rollout of HSDPA networks and flat-rate pricing plans, the wireless industry has seen amazing growth in mobile broadband average revenue per user. Since middle 2009, further enhancements of the HSPA technology, defines a new OFDMAbased technology through the Long Term Evolution (LTE) start to ramp in the market. The ability of LTE to support bandwidths up to 20MHz and to have more spectral efficiency by using better modulation methods like QAM-64, is of particular importance as the demand for higher wireless data speeds continues to grow fast. Countries all over the world have released various frequencies bands for the 3G and 4G applications. Table 1 and Table 2 show the band assignment for the LTE and LTE bands worldwide. Table 1 LTE/WCDMA Band Assignment Band No. Uplink Frequencies (TX) Downlink Frequencies (RX) Comment 1 1920-1980 MHz 2110-2170 MHz 2 1850-1910 MHz 1930-1990 MHz 2 (G) 1850-1915 MHz 1930-1995 MHz 2 (H) 1850-1920 MHz 1930-2000 MHz 3 1710-1785 MHz 1805-1880 MHz 4 1710-1755 MHz 2110-2155 MHz 5 824-849 MHz 869-894 MHz 6 830-840 MHz 875-885 MHz 7 2500-2570 MHz 2620-2690 MHz 8 880-915 MHz 925-960 MHz Application Note AN353, Rev. 1.0 4 / 27
Introduction Table 2 LTE Band Assignment Band No. Uplink Frequency Range Downlink Frequency Range Comment 1 1920-1980 MHz 2110-2170 MHz 2 1850-1910 MHz 1930-1990 MHz 3 1710-1785 MHz 1805-1880 MHz 4 1710-1755 MHz 2110-2155 MHz 5 824-849 MHz 869-894 MHz 6 830-840 MHz 875-885 MHz 7 2500-2570 MHz 2620-2690 MHz 8 880-915 MHz 925-960 MHz 9 1749.9-1784.9 MHz 1844.9-1879.9 MHz 10 1710-1770 MHz 2110-2170 MHz 11 1427.9-1452.9 MHz 1475.9-1500.9 MHz 12 698-716 MHz 728-746 MHz 13 777-787 MHz 746-756 MHz 14 788-798 MHz 758-768 MHz 17 704-716 MHz 734-746 MHz 18 815-830 MHz 860-875 MHz 19 830-845 MHz 875-890 MHz 20 832-862 MHz 791-821 MHz 21 1447.9-1462.9 MHz 1495.9-1510.9 MHz 33 1900-1920 MHz 1900-1920 MHz 34 2010-2025 MHz 2010-2025 MHz 35 1850-1910 MHz 1850-1910 MHz 36 1930-1990 MHz 1930-1990 MHz 37 1910-1930 MHz 1910-1930 MHz 38 2570-2620 MHz 2570-2620 MHz 39 1880-1920 MHz 1880-1920 MHz 40 2300-2400 MHz 2300-2400 MHz In order to cover different countries with a unique device, mobile phones and 3G data cards are usually equipped with more than one band. Some typical examples are the triple band combination of band 1, 2 and 5 or quad band combination of band 1, 2, 5 and 8. Since last year, some 700MHz bands are released in the US, so that band combination like 4, 13 and 17 are also well visible in the market. Application Note AN353, Rev. 1.0 5 / 27
Transceiver BGA711N7 Introduction 1.2 Applications Figure 1 shows an example of the block diagram of the front-end of a 3G modem. A SPnT switch connects on one side the modem antenna and on the other sides several duplexers for different 3G bands. Every duplexer is connected to the transmitting (TX) and receiving (RX) paths of each band. The external LNA, here for example BGA735N16, is placed on the RX path between the duplex and the bandpass SAW filter. The output of the SAW filter is connected to the receiver input of the transceiver IC. Depending on the number of bands designed in a device, various numbers of LNAs are required in a system. It can be 1-, 2-, 3-, or 4-bands. Recently, even mobile devices with 6 bands are under discussion. CMOS Antenna Switch Module BGSF18A/D GSM/EDGE Front-End GSM/ EDGE Duplexer 3G/3.5G PA 3G/3.5G BPF Figure 1 3G/3.5G Power Detection Diodes BAT15x BAT68x BAT62x BAS70x 3G/3.5G/4G LNA Family 1-Band: BGA711L7, BGA751L7, BGA777L7, BGA728L7 BGA713L7 3-Band: BGA735N16, BGA734L16, BGA736L16 4-Band: BGA748N16, BGA747N16, BGA749N16 UMTS LTE Example of Application Diagram of a 3-band RF front-end for 3G and 4G systems. Besides low noise amplifiers, Infineon Technologies also offers system designers solutions for high power highly linear antenna switches as well as power detection diodes for power amplifiers. Application Note AN353, Rev. 1.0 6 / 27
Introduction 1.3 Infineon LNAs for 3G and 4G Applications With the increasing wireless data speed and with the extended link distance of mobile phones and 3G data cards, the requirements on the sensitivity are much higher. Infineon offers different kind of low noise amplifiers (LNAs) to support the customers for mobile phones and data cards of 3G and 4G to improve their system performance to meet the requirements coming from the networks/service providers. The benefits to use external LNAs in equipment for 3G and 4G applications are: - Flexible design to place the front-end components: due to the size constraint, the modem antenna and the front-end can not be always put close to the transceiver IC. The path loss in front of the integrated LNA on the transceiver IC increases the system noise figure noticeably. An external LNA physically close to the ANT can help to eliminate the path loss and reduce the system noise figure. Therefore the sensitivity can be improved by several db. - Boost the sensitivity by reducing the system noise figure: external LNA has lower noise figure than the integrated LNA on the transceiver IC. - Bug fix to help the transceiver ICs to fulfill the system requirements. - Increase the dynamic range of the power handling. Infineon Technologies is the leading company with broad product portfolio to offer high performance SiGe:C bipolar transistor LNAs and MMIC LNAs for various wireless applications by using the industrial standard silicon process. - New generation Band-7like BGA7M1N6 for high-band (HB, 2300MHz-2690MHz), BGA7M1N6 for high-band (1805MHz-2200MHz) or BGA7L1N6 for low-band (LB, 728-960MHz) are available. - Other single-band LNAs like BGA777L7 / BGA777N7 for high-band (2300MHz-2700MHz), BGA711L7 / BGA711N7 for mid-band (MB, 1700MHz-2300MHz) or BGA751L7 / BGA751N7 for low-band (LB, 700-1000MHz) are available. BGA7M1N6 / BGA7M1N6 is designed for the special LTE bands 12, 13, 14, 17, 18, 19 and 20 in the US. - Triple-band LNAs BGA734N16, BGA735N16 and BGA736N16 are available to cover the most bands. All of the three triple-band LNAs can support designs covering 2x high-bands and 1x low-band. Application Note AN353, Rev. 1.0 7 / 27
Introduction - Both BGA748N16 and BGA749N16 are quad-band LNAs. BGA748N16 can cover 2x highand 2x low-bands and BGA749N16 can cover 1x high-band and 3x low-bands. All of these quad-bands LNAs can support all designs with 3 to 4 bands. -New generation LTE LNA banks are quard band. There are six different types of these new LTE LNAs which are shown in table 3. All the LNAs have four bands with the combination of high-band (HB, 2300MHz-2690MHz), mid-band (MB, 1700MHz-2300MHz) and low-band (LB, 700-1000MHz). The broad product portfolio with highest integration and best features in noise figure, switchable gain level and flexible band selection helps designers of mobile phones and data cards to achieve outstanding performance. Therefore Infineon LNAs are widely used by major mobile phone vendors. Table 3 Infineon Product Portfolio of LNAs for new LTE Applications Frequency Range 728 MHz 960 MHz 1805MHz 2200MHz 2300 MHz 2690 MHz Comment Single-Band LNA BGA7L1N6 x BGA7M1N6 x BGA7H1N6 x Quad-band LNA bank BGM7MLLH4L12 x x x BGM7LMHM4L12 x x x BGM7HHMH4L12 x x BGM7MLLM4L12 x x BGM7LLHM4L12 x x x BGM7LLMM4L12 x x Table 4 Infineon Product Portfolio of LNAs for 3G and 4G Applications Frequency Range 700 MHz 1 GHz 1400MHz 2200MHz 2100 MHz 2700 MHz Comment Single-Band LNA BGA711N7/L7 x BGA751N7/L7 x BGA777N7/L7 x BGA728L7/N7 x x BGA713L7/N7 x Dual Band LNA BGA771L16 x x Application Note AN353, Rev. 1.0 8 / 27
Introduction Table 4 Infineon Product Portfolio of LNAs for 3G and 4G Applications Triple Band LNA BGA734L16 x x x BGA735N16 x x x BGA736N16 x x x Quad-band LNA BGA748N16 x x x BGA749N16 x x x Application Note AN353, Rev. 1.0 9 / 27
BGA711N7 Overview 2 BGA711N7 Overview 2.1 Features Gain: 17 / -8 db in high / low gain mode (f.e. at 2.14GHz) Noise figure: 1.1 db in high gain mode (f.e. at 2.14GHz) Supply current: 3.6 / 0.5 ma in high / low gain mode Standby mode (< 2 μa typ.) Output internally matched to 50 Ω Inputs pre-matched to 50 Ω 2 kv HBM ESD protection Low external component count Small leadless TSNP-7-1 package (2.0 x 1.3 x 0.39 mm) Pb-free (RoHS compliant) package Figure 2 BGA711N7 in TSNP-7-1 2.2 Description The BGA711N7 is a low current single-band low noise amplifier MMIC for 3G, 3.5G and 4G. The LNA is based upon Infineon s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 leadless green package. Because the matching is off chip, the RF path can be easily converted into a 1.8GHz to 2.7GHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. Application Note AN353, Rev. 1.0 10 / 27
BGA711N7 Overview Figure 3 Equivalent Circuit of BGA711N7 Figure 4 Package and pin connections of BGA711N7 Application Note AN353, Rev. 1.0 11 / 27
BGA711N7 Overview Table 5 Pin Assignment of BGA711N7 Pin No. Symbol Function 1 RFIN LNA input 2 VEN Band select control 3 VGS Gain step control 4 VCC Supply voltage 5 RREF Bias current reference resistor (high gain mode) 6 RFOUT LNA output 7 GND Package paddle; ground connection for LNA and control circuitry Table 6 Truth Table of BGA711N7 Control Voltage VEN VGS HG LG H L OFF ON H H ON OFF L L STANDBY L H Application Note AN353, Rev. 1.0 12 / 27
Application Circuit and Performance Overview 3 Application Circuit and Performance Overview Device: Application: PCB Marking: BGA711N7 BGA711N7 for LTE Applications Supporting Band 3 and 33 with High Gain of 18dB 3.1 Summary of Measurement Results Table 7 Electrical Characteristics at VCC = 2.8 V (at room temperature) Band 3 (1805 1880 MHz), Band 33 (1900 1920 MHz), TA = 25 C, VCC = VEN =VGS =2.8 V, Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 4.2 ma Frequency Range Freq 1805 1880 1920 MHz Gain G 17.6 18 17.8 Noise Figure NF 1.01 1.05 1.03 db Input Return Loss RLin 13.5 14.5 14.5 db Output Return Loss RLout 11.2 17.5 11.9 db Reverse Isolation IRev 40 38.7 38.5 db Input P1dB IP1dB -8.5-7.8-8.2 dbm Output P1dB OP1dB 8.1 9.2 8.6 dbm Input IP3 IIP3-4.7 Output IP3 OIP3 13.3 dbm Loss of SMA and line of 0.11dB are substracted f 1 =1879 MHz, f 2 =1880 MHz P in1 =P in2 =-30 dbm Stability k >1 -- Measured up to 10 GHz Application Note AN353, Rev. 1.0 13 / 27
Application Circuit and Performance Overview Table 8 Electrical Characteristics at VCC = 2.8 V (at room temperature) Band 3 (1805 1880 MHz), Band 33 (1900 1920 MHz), TA = 25 C, VCC = VEN =2.8 V, VGS =0 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 2.8 V DC Current Icc 0.5 ma Frequency Range Freq 1805 1880 1920 MHz Gain G -13-10.9-10.3 Noise Figure NF 13 10.9 10.3 db Input Return Loss RLin 13.5 11.6 10.6 db Output Return Loss RLout 9.9 22.6 16.1 db Reverse Isolation IRev 13 10.9 10.2 db Input P1dB IP1dB >10 >10 >10 dbm Input IP3 IIP3 3.3 dbm Output IP3 OIP3-7.6 dbm Loss of SMA and line of 0.11 db are substracted f 1 =1879 MHz, f 2 =1880 MHz P in1 =P in2 =-25 dbm Stability k >1 -- Measured up to 10 GHz Application Note AN353, Rev. 1.0 14 / 27
Application Circuit and Performance Overview 3.2 BGA711N7 as LTE LNA for Band 3 and Band 33 (1805-1920 MHz) This application note focuses on the Infineon s Single-Band LTE LNA, BGA711N7 tuned for the band 3 and band 33. It presents the performance of BGA711N7 with 2.8V power supply with high gain mode current 4.2 ma and 0.5 ma current for low gain mode. The application circuit requires only five 0402 passive component. The component value is fine tuned to have optimal noise figure, gain, input and output matching. It has a gain of 18 db in high gain mode and -10.9 db gain in low gain mode. The circuit achieves input return loss better than 13.3 db in high gain mode and 9.9 db in low gain mode. The circuit also achieves output return loss better than 11.2 db in high gain mode and 10.2 db in low gain mode. At room temperature the noise figure is 1.05 db (SMA and PCB losses are subtracted). Furthermore, the circuit is unconditionally stable till 10 GHz. At Band 3 frequency, using two tones spacing of 1 MHz, the output third order intercept point, OIP3 reaches 13.3 dbm in high gain mode. Input P1dB of the BGA711N7 LNA is about -7.8 dbm at 1880 MHz for high gain mode and for low gain mode it is higher than 10 dbm. All the measurements are done with the standard evaluation board presented at the end of this application note. Application Note AN353, Rev. 1.0 15 / 27
3.3 Schematics and Bill-of-Materials Figure 5 Schematics of the BGA711N7 Application Circuit Table 9 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C1 3.3 pf 0402 Various DC block and Input matching C2 100 pf 0402 Various DC block C3 10 nf 0402 Various HF to ground C4 2.2 pf 0402 Various Output matching L1 2.7 nh 0402 Murata LQW series Input matching L2 2.7 nh 0402 Murata LQW series Output matching R REF 11 kω 0402 Various Bias current Setting N1 BGA711N7 TSNP-6-2 Infineon SiGe LNA Application Note AN353, Rev. 1.0 16 / 27
S21 (db) S21 (db) BGA711N7 Measurement Graphs 4 Measurement Graphs 25 Insertion Power Gain (Narrowband) 15 17.55 db 17.89 db 17.95 db 17.76 db 5 Low Gain High Gain -5-13.05 db -11.78 db -10.88 db -10.26 db -15 1.75 1.8 1.85 1.9 1.95 Frequency (GHz) Figure 6 Insertion Power Gain (Narrowband) of the BGA711N7 for Band-3 and Band-33 Applications 30 20 10 0 17.55 db 17.89 db Insertion Power Gain (Wideband) -11.78 db 17.95 db 17.76 db -10.26 db Low Gain High Gain -10-20 -30-40 -13.05 db -10.88 db 0 1 2 3 4 5 6 Frequency (GHz) Figure 7 Insertion Power Gain (Wideband) of the BGA711N7 for Band-3 and Band-33 Applications Application Note AN353, Rev. 1.0 17 / 27
S11 (db) NF (db) BGA711N7 Measurement Graphs 1.15 Noise Figure Vcc=2.8 V 1.1 1.8005 GHz 1.01 1.05 1.05 1.05 1 1.03 0.95 1.8 1.84 1.88 1.92 Frequency (GHz) Figure 8 Noise Figure of the BGA711N7 for Band-3 and Band-33 Applications 0 Input Return Loss Low Gain High Gain -5-10 -13.52 db -12.50 db -11.56 db -10.62 db -15-13.53 db -14.16 db -14.48 db -14.46 db -20 1.75 1.78 1.81 1.84 1.87 1.9 1.93 1.95 Frequency (GHz) Figure 9 Input Matching of the BGA711N7 for Band-3 and Band-33 Applications Application Note AN353, Rev. 1.0 18 / 27
-1.0 S22 (db) 0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 BGA711N7 Measurement Graphs Input Return Loss (Smith Chart) Low Gain 0.6 0.8 High Gain 2.0 Swp Max 1.95GHz 0.2-0.2 0.4 r 1.22 x 0.42 r 1.32 x -0.38 r 1.30 x -0.47-0.4-0.6-0.8 1.0 1.0 r 1.31 x 0.33 r 1.27 x -0.56 r 1.38 x 0.25-2.0-3.0 3.0 4.0 5.0 r 1.44 x 0.15 10.0-10.0 r 1.21 x -0.64-5.0-4.0 Swp Min 1.75GHz Figure 10 Input Matching (Smith Chart) of the BGA711N7 for Band-3 and Band-33 Applications 10 Output Return Loss Low Gain High Gain 0-10 -9.912 db -15.18 db -17.48 db -11.9 db -20-30 -11.18 db -16.81 db -22.59 db -16.05 db 1.75 1.8 1.85 1.9 1.95 Frequency (GHz) Figure 11 Output Matching of the BGA711N7 for Band-3 and Band-33 Applications Application Note AN353, Rev. 1.0 19 / 27
-1.0 S12 (db) 0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 10.0 BGA711N7 Measurement Graphs Output Return Loss (Smith Chart) Low Gain 0.6 0.8 High Gain 2.0 Swp Max 1.95GHz 0.2-0.2 0.4 r 0.61 x 0.35 r 0.88 x 0.31 r 1.13 x 0.09-0.4-0.6-0.8 1.0 1.0 r 0.69 x 0.37 r 1.20 x -0.29-2.0-3.0 3.0 r 1.02 x 0.29 4.0 r 1.31 x -0.02 r 1.31 x -0.52 5.0 10.0-10.0-5.0-4.0 Swp Min 1.75GHz Figure 12 Output Matching (Smith Chart) of the BGA711N7 for Band-3 and Band-33 Applications 0-10 Reverse Isolation Low Gain High Gain -20-13 db -11.8 db -10.9 db -10.2 db -30-40 db -39.2 db -38.7 db -38.5 db -40-50 1.75 1.78 1.81 1.84 1.87 1.9 1.93 1.95 Frequency (GHz) Figure 13 Reverse Isolation of the BGA711N7 for Band-3 and Band-33 Applications Application Note AN353, Rev. 1.0 20 / 27
Measurement Graphs 3 2.5 Stability k Factor Vcc=1.8 V Vcc=2.8 V 2 1.5 1 0.5 0 0.01 2.01 4.01 6.01 8.01 10 Frequency (GHz) Figure 14 Stability K-factor of the BGA711N7 for Band-3 and Band-33 Applications 3 2.5 Stability Mu1 Factor Low Gain High Gain 2 1.5 1 0.5 0 0.01 2.01 4.01 6.01 8.01 10 Frequency (GHz) Figure 15 Stability Mu1-factor of the BGA711N7 for Band-3 and Band-33 Applications Application Note AN353, Rev. 1.0 21 / 27
S21 (db) BGA711N7 Measurement Graphs 3 Stability Mu2 Factor 2.5 2 1.5 1 0.5 0 Low Gain High Gain 0 2 4 6 8 10 Frequency (GHz) Figure 16 Stability Mu2-factor of the BGA711N7 for Band-3 and Band-33 Applications 20 19-30 dbm 18.004 Input 1dB Compression Point at Vcc=2.8 V (HG) -30 dbm 17.941 1805 MHz 1843 MHz 1880 MHz 1920 MHz 18 17 16-30 dbm 17.605-29.87 dbm 17.814-8.501 dbm 16.605-7.826 dbm 17.004-8.193 dbm 16.941-8.16 dbm 16.814 15-30 -25-20 -15-10 -5 0 Power (dbm) Figure 17 Input 1dB compression point of the BGA711N7 for Band-3 and Band-33 Applications (HG) Application Note AN353, Rev. 1.0 22 / 27
S21 (db) BGA711N7 Measurement Graphs -8-9 -10 Input 1dB Compression Point at Vcc=2.8 V (LG) 1805 MHz 1843 MHz 1880 MHz 1920 MHz -11-12 -13-14 -15-25 -20-15 -10-5 0 5 10 Power (dbm) Figure 18 Input 1dB compression point of the BGA711N7 for Band-3 and Band-33 Applications (LQ) 0-20 High Gain Mode Intermodulation at 1880 MHz 1.879 GHz -12.22-13.39-40 -60 1.878 GHz -64.01 1.881 GHz -68.11-80 -100-120 1.877 1.878 1.879 1.88 1.881 1.882 Frequency (GHz) Figure 19 Input 3 rd interception point of the BGA711N7 for Band-3 and Band-33 Applications (HG) Application Note AN353, Rev. 1.0 23 / 27
Measurement Graphs 0 Low Gain Mode Intermodulation at 1880 MHz -20-40 -38.45 1.806 GHz -38.58-60 -80 1.804 GHz -95.54 1.807 GHz -95.2-100 -120 1.803 1.804 1.805 1.806 1.807 1.808 Frequency (GHz) Figure 20 Input 3 rd interception point of the BGA711N7 for Band-3 and Band-33 Applications (LG) Application Note AN353, Rev. 1.0 24 / 27
5 Evaluation Board and Layout Information BGA711N7 Evaluation Board and Layout Information In this application note, the following PCB is used: PCB Marking: PCB material: FR4 r of PCB material: 4.3 Figure 21 Photo Picture of Evaluation Board (overview), Figure 22 Photo Picture of Evaluation Board (detailed view) Vias FR4, 0.2mm Copper 35µm FR4, 0.8mm Figure 23 PCB layer stack Application Note AN353, Rev. 1.0 25 / 27
6 Authors BGA711N7 Authors Moakhkhrul Islam, RF Application Engineer of Business Unit RF and Protection Devices Tatsuya Urakawa, Senior RF Application Engineer of Business Unit RF and Protection Devices 7 Remark The graphs are generated with the simulation program AWR Microwave Office. Application Note AN353, Rev. 1.0 26 / 27
w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN353