MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS P6PowerTransistor DataSheet Rev.2.0 Final PowerManagement&Multimarket
1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos P6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. TO247 Features IncreasedMOSFETdv/dtruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD20 andjesd22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 41 mω Qg.typ 170 nc ID,pulse 267 A Eoss@400V 20.5 µj Body diode di/dt 300 A/µs Type/OrderingCode Package Marking RelatedLinks PGTO 247 6R041P6 see Appendix A 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 5 Electrical characteristics................................................................... 6 Electrical characteristics diagrams........................................................... 8 Test Circuits........................................................................... 12 Package Outlines....................................................................... 13 Appendix A............................................................................ 14 Revision History........................................................................ 15 Disclaimer............................................................................ 15 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 77.5 49.0 A TC=25 C TC=100 C Pulsed drain current 2) ID,pulse 267 A TC=25 C Avalanche energy, single pulse EAS 1954 mj ID=13.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR 2.96 mj ID=13.4A; VDD=50V; see table 10 Avalanche current, repetitive IAR 13.4 A MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0...400V Gate source voltage (static) VGS 20 20 V static; Gate source voltage (dynamic) VGS 30 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO247 Ptot 481 W TC=25 C Storage temperature Tstg 55 150 C Operating junction temperature Tj 55 150 C Mounting torque (Non FullPAK) TO247 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 67.2 A TC=25 C Diode pulse current 2) IS,pulse 267 A TC=25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=0...400V,ISD<=IS,Tj=25 C see table 8 Maximum diode commutation speed dif/dt 300 A/µs VDS=0...400V,ISD<=IS,Tj=25 C see table 8 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4
3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO247 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 0.26 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 260 C 1.6mm (0.063 in.) from case for 10s 5
4Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=2.96mA Zero gate voltage drain current IDSS 10 5 µa VDS=600,VGS=0V,Tj=25 C VDS=600,VGS=0V,Tj=150 C Gatesource leakage current IGSS 100 na VGS=20V,VDS=0V Drainsource onstate resistance RDS(on) 0.037 0.096 0.041 Ω VGS=10V,ID=35.5A,Tj=25 C VGS=10V,ID=35.5A,Tj=150 C Gate resistance RG 1 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 8180 pf VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 310 pf VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) 260 pf VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) 1200 pf ID=constant,VGS=0V,VDS=0...400V Turnon delay time td(on) 29 ns Rise time tr 27 ns Turnoff delay time td(off) 90 ns Fall time tf 5 ns VDD=400V,VGS=13V,ID=44.4A, RG=1.7Ω;seetable9 VDD=400V,VGS=13V,ID=44.4A, RG=1.7Ω;seetable9 VDD=400V,VGS=13V,ID=44.4A, RG=1.7Ω;seetable9 VDD=400V,VGS=13V,ID=44.4A, RG=1.7Ω;seetable9 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 50 nc VDD=400V,ID=44.4A,VGS=0to10V Gate to drain charge Qgd 59 nc VDD=400V,ID=44.4A,VGS=0to10V Gate charge total Qg 170 nc VDD=400V,ID=44.4A,VGS=0to10V Gate plateau voltage Vplateau 6.1 V VDD=400V,ID=44.4A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 6
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=44.4A,Tj=25 C Reverse recovery time trr 630 ns Reverse recovery charge Qrr 19 µc Peak reverse recovery current Irrm 56 A VR=400V,IF=44.4A,diF/dt=100A/µs; see table 8 VR=400V,IF=44.4A,diF/dt=100A/µs; see table 8 VR=400V,IF=44.4A,diF/dt=100A/µs; see table 8 7
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 500 450 400 Diagram2:Safeoperatingarea 10 3 10 2 10 µs 100 µs 1 µs 350 300 10 1 1 ms 10 ms Ptot[W] 250 200 ID[A] 10 0 DC 150 10 1 100 10 2 50 0 0 25 50 75 100 125 150 TC[ C] Ptot=f(TC) 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 10 3 Diagram4:Max.transientthermalimpedance 10 0 10 2 10 µs 1 µs 100 µs 0.5 ID[A] 10 1 10 0 10 1 DC 10 ms 1 ms ZthJC[K/W] 10 1 10 2 0.2 0.1 0.05 0.02 0.01 10 2 single pulse 10 3 10 0 10 1 10 2 10 3 VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 10 3 10 5 10 4 10 3 10 2 10 1 10 0 tp[s] ZthJC=f(tP);parameter:D=tp/T 8
Diagram5:Typ.outputcharacteristics ID[A] 280 240 200 160 120 80 40 10 V 8 V 7 V 6 V 20 V 5.5 V 0 4.5 V 5 V 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS Diagram6:Typ.outputcharacteristics 170 160 20 V 10 V 150 8 V 140 130 120 110 7 V 100 ID[A] 90 80 70 6 V 60 50 40 5.5 V 30 20 5 V 10 4.5 V 0 0 5 10 15 20 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 0.15 0.14 Diagram8:Drainsourceonstateresistance 0.12 0.11 0.13 0.12 0.10 0.09 0.08 RDS(on)[Ω] 0.11 0.10 0.09 0.08 0.07 5.5 V 6 V 6.5 V 7 V 10 V 20 V RDS(on)[Ω] 0.07 0.06 0.05 0.04 0.03 0.02 98% typ 0.06 0.01 0.05 0 10 20 30 40 50 60 70 80 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0.00 50 25 0 25 50 75 100 125 150 Tj[ C] RDS(on)=f(Tj);ID=35.5A;VGS=10V 9
Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 300 10 9 250 25 C 8 120 V 480 V 200 7 6 ID[A] 150 150 C VGS[V] 5 4 100 3 50 2 1 0 0 2 4 6 8 10 12 14 VGS[V] ID=f(VGS);VDS=20V;parameter:Tj 0 0 50 100 150 200 Qgate[nC] VGS=f(Qgate);ID=44.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 10 2 Diagram12:Avalancheenergy 2000 1800 1600 10 1 1400 IF[A] 125 C 25 C EAS[mJ] 1200 1000 800 10 0 600 400 200 10 1 0.0 0.5 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 0 25 50 75 100 125 150 Tj[ C] EAS=f(Tj);ID=13.4A;VDD=50V 10
Diagram13:Drainsourcebreakdownvoltage 700 Diagram14:Typ.capacitances 10 5 680 660 10 4 Ciss 640 VBR(DSS)[V] 620 600 C[pF] 10 3 10 2 Coss 580 560 10 1 Crss 540 520 75 50 25 0 25 50 75 100 125 150 175 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 10 0 0 100 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 28 26 24 22 20 18 Eoss[µJ] 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) 11
6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 10 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 90% V GS V GS 10% t d(on) t r t d(off) t f t on t off Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V D I D 12
600V CoolMOS P6 Power Transistor 7 Package Outlines Figure 1 Outline PGTO 247, dimensions in mm/inches 13 Rev. 2.0, 20140307
600V CoolMOS P6 Power Transistor 8 Appendix A Table 11 Related Links IFX CoolMOSTM P6 Webpage: www.infineon.com IFX CoolMOSTM P6 application note: www.infineon.com IFX CoolMOSTM P6 simulation model: www.infineon.com IFX Design tools: www.infineon.com 14 Rev. 2.0, 20140307
600V CoolMOS P6 Power Transistor Revision History Revision: 20140307, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 20140307 Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.0, 20140307