NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS

Similar documents
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP

MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

MPS650, MPS651, NPN MPS750, MPS751, PNP. Amplifier Transistors. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon

BC857BTT1G. General Purpose Transistor. PNP Silicon

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MPSA13, MPSA14. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MMBT5087L. Low Noise Transistor. PNP Silicon

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

MMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MJE243 - NPN, MJE253 - PNP

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Adc. W W/ C T J, T stg 65 to C

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

SNSS35200MR6T1G. 35 V, 5 A, Low V CE(sat) PNP Transistor. 35 VOLTS 5.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 100 m

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

2N3771, 2N3772. High Power NPN Silicon Power Transistors. 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor

MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors

BC846BM3T5G. General Purpose Transistor. NPN Silicon

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

BC856ALT1G Series. General Purpose Transistors. PNP Silicon

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors. NPN/PNP Silicon DPAK For Surface Mount Applications

MJE15034 NPN, MJE15035 PNP

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MJD44H11 (NPN) MJD45H11 (PNP)

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)

MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors

2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W

NSTB1002DXV5T1G, NSTB1002DXV5T5G

TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MUN5311DW1T1G Series.

MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D

NSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR

Transcription:

- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase Voltage V CBO 8 EmitterBase Voltage V EBO 6. Collector Current Continuous I C madc Total Device Dissipation @ T A = 25 C Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 5. P D.5 2 mw mw/ C W mw/ C T J, T stg 55 to + C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient (Note ) R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. R JA is measured with the device soldered into a typical printed circuit board. 2 BASE CASE 29 STYLE EMITTER 2 BASE 2 2 3 3 STRAIGHT LEAD BULK PACK MARKING DIAGRAM MPS 8x99 AYWW EMITTER BENT LEAD TAPE & REEL AMMO PACK x = or 5 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2 August, 2 Rev. 2 Publication Order Number: MPS899/D

ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) ( madc, I B = ) CollectorBase Breakdown Voltage ( Adc, I E = ) EmitterBase Breakdown Voltage (I E = Adc, ) Collector Cutoff Current (V CE = 6, I B = ) Collector Cutoff Current (V CB = 8, I E = ) Emitter Cutoff Current (V EB = 6., ) ON CHARACTERISTICS (Note 2) DC Current Gain (. madc, V CE = 5. ) ( madc, V CE = 5. ) ( madc, V CE = 5. ) CollectorEmitter Saturation Voltage ( madc, I B = 5. madc) ( madc, I B = madc) BaseEmitter On Voltage ( madc, V CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product ( madc, V CE = 5., f = MHz) Output Capacitance (V CB = 5., I E =, f =. MHz) Input Capacitance (V EB =.5,, f =. MHz) 2. Pulse Test: Pulse Width s, Duty Cycle = 2.%. Characteristic Symbol Min Max Unit V (BR)CEO 8 V (BR)CBO 8 V (BR)EBO 6. I CES. I CBO. I EBO. h FE 75 V CE(sat).4.3 V BE(on).6.8 f T C obo 8. C ibo Adc Adc Adc MHz pf pf 2

ORDERING INFORMATION MPS899G MPS899RLRAG MPS899RLRPG MPS8599RLRAG MPS8599RLRMG Device Package Shipping Units / Bulk / Tape & Reel / Ammo Pack / Tape & Reel / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE..7.5.3..7.5.3.2. D =.5..5 SINGLE PULSE.2. SINGLE PULSE Z JC (t) = r(t) R JC T J(pk) - T C = P (pk) Z JC (t) Z JA (t) = r(t) R JA T J(pk) - T A = P (pk) Z JA (t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t (SEE AN469). 2. 5.. k 2. k 5. k k k k k t, TIME (ms) Figure. Thermal Response P (pk) t t2 DUTY CYCLE, D = t /t 2 TURN-ON TIME TURN-OFF TIME -. V V CC +4 V +V BB V CC +4 V + V 5. s R L OUTPUT R L OUTPUT t r = 3. ns V in 5. F R B * C S 6. pf V in 5. F R B * C S 6. pf 5. s t r = 3. ns *Total Shunt Capacitance of Test Jig and Connectors For Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits 3

f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz). 5. V V CE =. V 2. f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) -5. V V CE = -. V 3. 5. 7. -. -2. -3. -5. -7. - - - - - - Figure 3. CurrentGain Bandwidth Product Figure 4. CurrentGain Bandwidth Product 4 4 T J J = 25 C C, CAPACITANCE (pf) C ibo 8. 8. 6. 4. C obo C, CAPACITANCE (pf) 6. 4. C ibo C obo 2...5. 2. 5. V R, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance 2. -. - -.5 -. -2. -5. - - - - V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance t, TIME (ns). k V CC = 4 V I C /I B = I B = I B2 t d @ V BE(off) =.5 V t s t f t r t, TIME (ns). k t s V CC = -4 V I C /I B = I B = I B2 t f t r t d @ V BE(off) = -.5 V - - - - - - - Figure 7. Switching Times Figure 8. Switching Times 4

. k. - - CURRENT LIMIT - CURRENT LIMIT THERMAL LIMIT THERMAL LIMIT - SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT DUTY CYCLE % - MPS898 MPS8598 DUTY CYCLE % MPS899 MPS8599-2. 3. 5. 7. -. -2. -3. -5. -7. - - - - - - Figure 9. ActiveRegion Safe Operating Area -. k - - - - Figure. ActiveRegion Safe Operating Area h FE, DC CURRENT GAIN 4 8 6 T J = 25 C 25 C -55 C V CE = 5. V h FE, DC CURRENT GAIN T J = 25 C 25 C -55 C V CE = -5. V 4.3.5. 2. 3. 5. - -.5 -. -2. -5. - - - - - Figure. DC Current Gain Figure 2. DC Current Gain...8 V BE(sat) @ I C /I B =.8 V BE(sat) @ I C /I B = V, VOLTAGE (VOLTS).6.4 V BE @ V CE = 5. V V, VOLTAGE (VOLTS).6.4 V BE @ V CE = 5. V V CE(sat) @ I C /I B = V CE(sat) @ I C /I B =.5. 2. 5..5. 2. 5. Figure 3. ON Voltages Figure 4. ON Voltages 5

2..6.2.8.4 ma.2.5 ma ma ma I B, BASE CURRENT (ma) Figure 5. Collector Saturation Region ma..5. 2. 5. 2..6.2.8.4 ma.2.5 ma ma ma..5. 2. 5. I B, BASE CURRENT (ma) Figure 6. Collector Saturation Region ma R VB, TEMPERATURE COEFFICIENT (mv/ C) -. -.4 -.8-2.2-2.6-3. R VB FOR V BE.5-55 C TO 25 C -3.. 2. 5..5. 2. 5. R VB, TEMPERATURE COEFFICIENT (mv/ C) -. -.4 -.8-2.2-2.6 R VB FOR V BE -55 C TO 25 C Figure 7. BaseEmitter Temperature Coefficient Figure 8. BaseEmitter Temperature Coefficient 6

PACKAGE DIMENSIONS (TO226) CASE 29 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.75.5 4.45 5. B. 4.32 5.33 C.25.65 3.8 4.9 D.6.2.47.533 X X D G.45.55.5.39 H.95.5 2.42 2.66 G J.5..39. H J K. --- 2. --- V C L --- 6.35 --- N.8.5 2.4 2.66 P ---. --- 2.54 SECTION XX R.5 --- 2.93 --- N V.35 --- 3.43 --- R T SEATING PLANE P G A X X V B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION XX NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5. B 4.32 5.33 C 3.8 4.9 D.4.54 G 2.4 2.8 J.39. K 2. --- N 2.4 2.66 P. 4. R 2.93 --- V 3.43 --- STYLE : PIN. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 3675275 or 8344386 Toll Free USA/Canada Fax: 3675276 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 83587 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MPS899/D