VL0306-VLSI Devices & Design. L T P C EC0306 VLSI DEVICES AND DESIGN Prerequisite : EC0205 & EC0203 Course outcomes

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Page 1 VL0306-VLSI Devices & Design L T P C EC0306 VLSI DEVICES AND DESIGN 2 2 0 3 Prerequisite : EC0205 & EC0203 Course outcomes Instructional objectives Introduce the technology, design concepts, electrical properties and modeling of Very Large Scale Integrated circuits. Basics of MOS Circuit Design & modeling Basics of MOS process Technology Understand the concepts of modeling a digital system using Hardware Description Language the ability to identify, formulate and solve engineering problems i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues j) Graduate will develop confidence for self education and ability for life-long learning Course designed by Program 1 outcome 2 Category 3 Broad area (for P category) Department of Electronics & Communication Engineering a b c d e f g h i j k x x x x x x x Basic Engineering General Professional Sciences Sciences and (G) Subjects(P) (B) Technical Arts(E) Communication Signal Processing Electronics VLSI Embedded

4 Staff responsible for preparing the syllabus Mrs. N. Saraswathi, Dr.J. Selvakumar 5 Date of preparation December 2013 Page 2 VL0306 VLSI Devices & Design.. Mapping of Program Educational Objectives Vs Program Outcomes Educational Program objectives Program Outcomes 1. To prepare students to compete for a successful career in their chosen profession through global education standards. 2. To enable the students to aptly apply their acquired knowledge in basic sciences and mathematics in solving engineering problems. 3. To produce skillful graduates to analyze, design and develop a system/componen t/process for the required needs under the realistic constraints. 4. To train the students to approach ethically any multidisciplinary engineering challenges with economic, environmental and social contexts 5. To create an awareness among the students about the need for life long learning to succeed in their professional career. a) Graduates will demonstrate knowledge of mathematics, science and engineering. b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications k)graduates will show the ability to participate and try to succeed in competitive

Page 3 VL0306 VLSI Devices & Design SRM University Department of Electronics and Communication Engineering Course Code : EC0306 Course Title : VLSI Devices and Design INSTRUCTIONAL OBJECTIVE PROGRAM OUTCOME EVIDENCE Introduce the technology, design concepts, electrical properties and modeling of Very Large Scale Integrated circuits Basics of MOS Circuit Design & modeling Basics of MOS process Technology Understand the concepts of modeling a digital system using Hardware Description Language knowledge of mathematics, the ability to identify, formulate i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues k) Graduates will show the ability to participate and try to succeed in competitive. knowledge of mathematics, c) Graduates will demonstrate the ability to design and. the ability to design a system, component or process as per needs and specifications k)graduates will show the ability to participate and try to. the ability to identify, formulate and solve engineering problems the ability to design a system, component or process as per needs and specifications i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues the ability to identify, formulate and solve engineering problems the ability to design and the ability to design a system, component or process as per Cycle test-ii Lesson notes-session no.3 Cycle test-ii Lesson notes-session no.3 Ability to model & design an IC for an application in a society Tested with Objective Questions Capable of answering *competitive exams like JTO, GATE, IES etc. surprise test-ii Analysed and performed experiments (no.7,8,9) in VLSI lab Designed and performed experiments in VLSI LAB based on switching level modeling Tested with Objective Questions Capable of answering *competitive exams like JTO, GATE, IES etc. Model exam Analysed and performed experiments in VLSIDesign LAB Designed and performed experiments in VLSI Design LAB Cycle test-i & Surprise Test - I Lesson notes-session no.3 Analysed and performed experiments(no.1,2,3,5) in VLSI Design lab Analysed and performed experiments(no.5,6,7,8) in VLSI Design lab

j) Graduate will develop confidence for self education and ability for life-long learning ability to participate and try to succeed in competitive Ability to learnt other HDL languages like ActiveHDL, AnalogVHDL, Vera, etc Tested with Objective Questions Capable of answering *competitive exams like JTO, GATE, IES etc. EC0306P VLSI Devices and Design 3 0 0 3 PURPOSE To introduce the technology, design concepts, electrical properties and modeling of Very Large Scale Integrated circuits. INSTRUCTIONAL OBJECTIVES To learn the basic MOS Circuits To learn the MOS process technology To learn the concepts of modeling a digital system using Hardware Description Language INTRODUCTION TO MOS TECHNOLOGY An overview of Silicon semiconductor technology- NMOS fabrication. CMOS fabrication: n-well, p- well - Twin tub and SOI Process - Interconnects. Circuit elements: Resistors- Capacitors- Bipolar transistors. Latch up and prevention. MOS CIRCUIT DESIGN PROCESS Basic MOS transistors: Symbols - Enhancement mode - Depletion mode transistor operation - Threshold voltage derivation - Body effect - Drain current Vs voltage derivation - Channel length modulation. NMOS and CMOS inverter - Determination of pull up to pull down ratio - Design of logic gates - Stick diagrams. PRINCIPLES OF VHDL (ELEMENTARY TREATMENT ONLY) Introduction to VHDL. Language elements: Identifiers - Data objects - Data types - Operators - Behavioral modeling - Dataflow modeling - Structural modeling - Examples - Sub programs and overloading - Package concepts. VERILOG HDL (ELEMENTARY TREATMENT ONLY) Hierarchical modeling concepts- Basic concepts: Lexical conventions - Data types - Modules and ports - Gate level modeling - Dataflow modeling - Behavioral modeling - Functions - UDP concepts CMOS SUBSYSTEM DESIGN Introduction - Design of Adders: carry look ahead, carry select, carry save, Parity generators. Design of multipliers: Array, Braun array, Baugh - Wooley Array, Wallace tree multiplier. TET BOOKS (1) Douglas A. Pucknell, "Basic VLSI Systems and Circuits", 3rd edition, Prentice Hall of India, 1993 (2) Samir Palnitkar, "Verilog HDL - Guide to Digital Design and Synthesis", 3rd Edition, Pearson Education, 2003 (3 ) J. Bhaskar, "VHDL Primer", 1st edition, BSP, 2002 REFERENCE BOOKS (1) Weste & Eshraghian, "Principles of CMOS VLSI Design", 2nd edition, Addison Wesley, 1993 (2) Fabricious. E, "Introduction to VLSI Design", 1st edition, McGraw Hill, 1990 (3) Roth.C, "Digital Systems Design using VHDL", Thomson Learning, 2000

SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND ELECTRICAL ENGINEERING DEPARTMENT OF ECE COURSE PLAN Course Code Course Title Semester Course Time Location : EC0306 : VLSI DEVICES AND DESIGN : VI : Dec-2013 May-2014 : S.R.M.E.C Day Order D1 -- D2 A B C D E F G H 5 th hr (1.30-2.20 pm) D3 -- D4 D5 3 rd & 4 th hr (10.35am- 1 st hr (8.45am 9.35am) 4 th hr (11.25am- 6 th hr (2.20 3.10 pm) -- -- 2 nd & 3 rd Hrs (9.35-11.25am) -- 10.35-11.25 am 7 th hr (8.45 9.35 am) 5 th hr (1.30-2.20pm) -- -- 2 nd & 3 rd Hrs (9.35 11.25am) 7 th hr (3.10 4pm) 1 st hr (8.45-9.35am) 2 nd hr (9.35-10.25am) 4 th hr (11.25am- 4 th hr (11.25am 2 nd hr (9.35-10.25am) 3 rd (10.35-11.25am) -- 6 th & 7 th hrs (2.20 4.00 pm) -- 2 nd & 4 th hrs (10.35am- 3 rd & 4 th hr (10.35am 11.25pm) 7 th hr (3.10-4.00pm) 4 th hr (11.25am -- -- -- Faculty Details Sec. Name Office Mail id A Dr. J. Selvakumar TP12S8 selvakumar.j@ktr.srmuniv.ac.in B Mrs. P. Radhika TP12S6 radhika.p@ktr.srmuniv.ac.in C Mrs. A. Maria Jossy TP12S2 mariajossy.a@ktr.srmuniv.ac.in D Mr. S. Nivash TP1206A nivash.s@ktr.srmuniv.ac.in E Mrs.T.V.Ananthalakshimi TP1006A ananthalakshimi.tv@ktr.srmuniv.ac.in F Mr. Prithiviraj TP101A prithiviraj.r@ktr.srmuniv.ac.in G Ms.G. Vijayalakshimi TP1203A vijayalakshimi.g@ktr.srmuniv.ac.in H Mrs.B.Sudha TP101A sudha.b@ktr,srmuniv.ac.in 5 th & 6 th hr (1.30 3.10pm) -- 2 nd Hr (9.35-10.25am) -- -- 7 th hr (3.10-4.00pm) Required Text Books: (1) Douglas A. Pucknell, "Basic VLSI Systems and Circuits", 3rd edition, Prentice Hall of India, 1993 (2) Samir Palnitkar, "Verilog HDL - Guide to Digital Design and Synthesis", 3rd Edition, Pearson Education, 2003 (3) J. Bhaskar, "VHDL Primer", 1st edition, BSP, 2002 (4) J.Bhaskar, Primer, 1st Edition, BSP2008 (5) Weste & Eshraghian, "Principles of CMOS VLSI Design", 2nd edition, Addison Wesley, 1993 (6) Fabricious. E, "Introduction to VLSI Design", 1st edition, McGraw Hill, 1990 (7) Roth.C, "Digital Systems Design using VHDL", Thomson Learning, 2000 (8) Jan M.Rabaey, Anantha Chandrakasan, Digital Integrated Circuits A Design Perspective, 2 nd Edition, Prentice Hall of India, 2003.

Web Resources : www.wikipedia.org www.pa.msu.edu www.tutorvista.com www.globalspec.com www.ee.bilkent.edu.tr Prerequisite : Knowledge in the course EC0205 Objectives 1. Understand the basic concepts VLSI Technology and Devices. 2. Ambient Knowledge about the popular HDL, namely VHDL & Verilog HDL. 3. Thorough Knowledge of MOS & CMOS fabrication process. 4. Capabilities to design Digital Arithmetic Blocks. Assessment Details Test Schedule Cycle Test I : 10 Marks Surprise Test I : 7.5 Marks Cycle Test II : 10 Marks Surprise Test II : 7.5 Marks Model Exam : 15 Marks S.No. DATE TEST TOPICS DURATION 1 05/02/2013 Cycle Test - I Session # 1-12 2 Hrs 2 05/03/2014 Cycle Test - II Session # 13-26 2 Hrs 3 Session # 1-48 3 Hrs 15/4/2014 Model Exam (Excluding #13 & 38) Outcomes Students who have successfully completed this course Course outcome 1. Introduce the technology, design concepts, electrical properties and modeling of Very Large Scale Integrated circuits. 2. Basics of MOS Circuit Design & Models 3. Basics of MOS process technology 4. Understand the concepts of modeling a digital system using Hardware Description Language Program outcome the ability to identify, formulate the ability to design a system, needs and specifications. i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues j) Graduate will develop confidence for self education and ability for life-long learning Detailed Session Plan PRINCIPLES OF VHDL (ELEMENTARY TREATMENT ONLY) Introduction to VHDL. Language elements: Identifiers - Data objects - Data types - Operators - Behavioral modeling - Dataflow modeling - Structural modeling - Examples - Sub programs and overloading - Package concepts. Sess -ion No. 1 Topics to be covered Introduction to VHDL Basic Terminology, Entity Declaration Architecture Body Text Book & Chapter No. by J.Bhaskar, Ch. 1, Pg. 1-28 Instructiona l Objective 4. Understand the concepts Program Outcome

2 3 4 5 6 7 8 9 10 11 12 13 Component Instantiation, concurrent signal assignment, Event scheduling Sequential Behavior, Process Statements, Sequential statements Data Objects, Data Types, Data Operators with an example Introduction to Behavioral Modeling Inertial Delay, Transport Delay, comparison between above,simulation Deltas Architecture Body, Process Statement, Variable & Signal Assignment statement with an example IF, Case, Loop, Next, Assertion and Block statement description with an example, Example program using session 6 & 7 statements Concurrent Signal Assignment, Sequential Signal Assignment, comparison between the above, Delta Delay and Multiple Drivers, Concurrent Assertion Statement Example programs on Dataflow Modeling, Introduction to Structural Modeling, Component Declaration & Instantiation. Example program on structural modeling. Full adder/multiplexer program in Data, Structural & Behavioral Modeling Subprogram, Functions, Procedures, Subprogram overloading- Examples Package Declaration & Body Deferred Constants, Examples based on package concept Surprise Test 1 - Based on session # 1-12. ( To be conducted on same day for all classes) by J.Bhaskar, Ch. 6, Pg. 125-136 by J.Bhaskar, Ch. 4, Pg. 70-85 by J.Bhaskar, Ch. 3, Pg. 34-61 by J.Bhaskar, Ch. 4, Pg. 86-100 by J.Bhaskar, Ch. 4, Pg. 1-28 by J.Bhaskar, Ch. 4, Pg. 70-89 by J.Bhaskar, Ch. 1, Pg. 1-28 by J.Bhaskar, Ch. 4, Pg. 67-122 by J.Bhaskar, Ch. 1, Pg. 1-28 by J.Bhaskar, Ch. 8, Pg. 163-180 by J.Bhaskar, Ch. 9, Pg. 183-189 by J.Bhaskar of modeling a digital system using Hardware Description Language j) Graduate will develop confidence for self education and ability for life-long learning VERILOG HDL (ELEMENTARY TREATMENT ONLY) Hierarchical modeling concepts- Basic concepts: Lexical conventions - Data types - Modules and ports - Gate level modeling - Dataflow modeling - Behavioral modeling - Functions - UDP concepts 14 15 16 Introduction to Verilog HDL, Module Definition, Delay types, Dataflow Styles, Behavioral Style, Structural Style Modeling. Language Elements- Identifier, Format, Complier Directives Value set, Data Types,Parameters Introduction to Modules & ports, Hierarchical Modeling-example, Operands & Operator Types Ch.2, pg. 7-22 Ch.2, pg. 25,26,27,38-54 Verilog HDL - Guide to Digital Design and Synthesis,Palnitkar, 4. Understand the concepts of modeling a digital system using Hardware Description Language

Ch.1,pg. 2-14 17 18 19 20 21 22 Introduction to Gate Delays, Built-in Primitive Gates, MIMO Gates, Tristate Gates, Array of Instances, Example program for Gate Level modeling Introduction to Dataflow Modeling, Continuous Assignment Statement, Net Declaration Assignment Introduction to Behavioral Modeling initial, always statement. Timing Control- Delay & Event, Sequential and Parallel Block statement, Blocking & non-blocking statement Continuous Vs Procedural Assignment, Conditional statement, LOOP statement A Suitable example Functions-Definitions, Functional calls, constant Functions, Opening & Closing Files functions, Reading & Writing File Functions UDP Concept-Definition, Combinational UDP, Sequential UDP, Example Ch.5, pg. 83-95 Ch.6, pg. 112-121 Ch.8, pg. 122-138 Ch.8, pg. 141-160 Ch.10, pg. 204-219 Ch.6, pg. 103-110 j) Graduate will develop confidence for self education and ability for life-long learning j) Graduate will develop confidence for self education and ability for life-long learning INTRODUCTION TO MOS TECHNOLOGY An overview of Silicon semiconductor technology- NMOS fabrication. CMOS fabrication: n-well, p-well - Twin tub and SOI Process - Interconnects. Circuit elements: Resistors- Capacitors- Bipolar transistors. Latch up and prevention. 23 24 25 26 27 28 29 Issues in Digital IC Design- Introduction to Manufacturing process NMOS fabrication process flowchart & components Introduction to CMOS fabrication process, N-well fabrication process description Introduction to P-well fabrication process and brief explanation on p-well process Detailed flow description of Twin-tub & SOI fabrication process. Introduction to Interconnect parameter capacitance, Resistance, Inductance Resistor & Capacitor fabrication steps in detail. NPN/PNP BJT fabrication processflowchart & description, Latch up definition & description on its prevention methods Weste, Ch. 3, Pg.109 A Pucknell, Ch. 2, pg.55 Weste, Ch. 3, Pg.117. Weste, Ch. 3, Pg.123 Weste, Ch. 3, Pg.123 Weste, Ch. 3, Pg.134 Weste, Ch. 3, Pg.138 1. Introduce the technology, design concepts, electrical properties and modeling of Very Large Scale Integrated circuits. 3. Basics of MOS process technology i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues MOS CIRCUIT DESIGN PROCESS Basic MOS transistors: Symbols - Enhancement mode - Depletion mode transistor operation - Threshold voltage derivation - Body effect - Drain current Vs Voltage derivation - Channel length modulation. NMOS and CMOS inverter - Determination of pull up to pull down ratio - Design of logic gates - Stick diagrams. 30 31 Basic MOS transistor symbols & operation in enhancement, depletion mode operation MOS transistor under Static condition, MOS Threshold voltage derivation, Introduction to sub threshold conduction, velocity saturation A Pucknell, Ch.1, pg.1-9 A Pucknell, Ch.2, 1. Introduce the.

32 33 34 35 36 37 38 39 Body Effect- Definition & Description, Hot carrier effects, Drain current Derivation for a MOS transistor in resistive, saturation & non-saturation regions MOS transistor drain current Vs Voltage Derivation Description & Derivation Introduction to static CMOS Inverter switching threshold, Noise Margins, robustness Derivation of a pull-down to pull up ratio for a NMOS & CMOS transistor Design of Logic gates- 2/3/4 input NAND, NOR, AND, OR, EOR. Introduction to logic styles such as Static CMOS, Dynamic CMOS. Stick Diagram-Introduction, Notation, Rules. Stick diagram for 2 input NAND, NOR, AND, OR and Boolean function. Layout Diagram-Introduction, Notation, Rules. Stick diagram for 2 input NAND, NOR, AND, OR and Boolean function. Surprise Test 2 - Based on session # 30-38 ( To be conducted on same day for all classes) pg.25-50 Weste, Ch. 2, Pg.46 Weste, Ch. 2, Pg.48 A Pucknell, Ch.2, pg.34-54 A Pucknell, Ch.2, pg.34-54 A Pucknell, Ch.2, pg.34-54 A Pucknell, Ch.3, pg.56-85 A Pucknell, Ch.3, pg.56-85 Pucknell, Ch.1,2,3 technology, design concepts, electrical properties and modeling of Very Large Scale Integrated circuits. 2. Basics of MOS Circuit Design & Models i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues i) Graduate will show the understanding of impact of engineering solutions on the society and also will be aware of contemporary issues CMOS SUBSYSTEM DESIGN Introduction - Design of Adders: carry look ahead, carry select, carry save, Parity generators. Design of multipliers: Array, Braun array, Baugh - Wooley Array, Wallace tree multiplier. 40 41 42 43 44 45 Introduction to Arithmetic Building Blocks- The Binary adder- Ripple Carry Adder- Description, Propagation Delay derivation Carry-Look ahead Adder-Conceptual & Schematic Diagram, carryout equation derivation Carry-Save Adder- Conceptual & Schematic Diagram, carryout equation derivation Introduction to CMOS based Parity generation design, Conceptual diagram & Description, Advantages of CMOS Implementation The Multiplier- Definitions, Partial-Product Generation, Partial Product Accumulation, Brief description on array multiplier Braun Array Multiplier- Architecture Description, PPG Unit, Delay equations & advantages Digital Integrated circuits, John Rabaey, Ch.11, pg.559 Digital Integrated circuits, John Rabaey, Ch.11, pg.578 Digital Integrated circuits, John Rabaey, Ch.11, pg.559 & Circuits Douglas A Pucknell, Ch. 6, pg.151 Digital Integrated circuits, John Rabaey, Ch.11, pg.588 & Circuits Douglas A Pucknell, Ch.8, pg.220-232 2.Basics of MOS Circuit Design & modeling science and engineering science and engineering 46 Baugh Wooley Multiplier- Architecture Description, PPG Unit, Delay equations & advantages & Circuits Douglas A. Pucknell, Ch.8, pg.220-

47 48 Wallace Tree Multiplier- Architecture Description, PPG Unit, Delay equations & advantages Booth Array Multiplier- Architecture Description, PPG Unit, Delay equations & advantages 232 Digital Integrated circuits, John Rabaey, Ch.11, pg.594 & Circuits Douglas A. Pucknell, Ch.8, pg.220-232