SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power MOSFET % UIS Tested % R g Tested PWM Optimized Compliant to RoHS Directive 22/95/EC APPLICATIONS LCD Display Backlight Inverters DC/DC Converters D Drain Connected to Tab G G D S Top View Ordering Information: SUD5N4-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS 4 V Gate-Source Voltage V GS ± 2 5 a T Continuous Drain Current (T J = 5 C) C = 7 C 44 I T D A = 25 C 4 b T A = 7 C.2 b A Pulsed Drain Current I DM T Continuous Source-Drain Diode Current C = 25 C 4 I T S A = 25 C 2.6 b Single Pulse Avalanche Current I L =. mh AS 3 Avalanche Energy E AS 45 mj 48. T Maximum Power Dissipation C = 7 C 3.8 P D W T A = 25 C 3. b T A = 7 C 2. b Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b Steady State R thja 32 4 C/W Maximum Junction-to-Case Steady State R thjc 2. 2.6 Notes: a. Package limited. b. Surface mounted on " x " FR4 board. S-9-Rev. B, 8-Jan-
SUD5N4-8m8P SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µa 4 V V DS Temperature Coefficient ΔV DS /T J 44 I D =. ma V GS(th) Temperature Coefficient ΔV GS(th) /T J - 5.9 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa.5 3. V Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V ± na V Zero Gate Voltage Drain Current I DS = 4 V, V GS = V DSS V DS = 4 V, V GS = V, T J = 7 C 2 µa On-State Drain Current a I D(on) V DS 5 V, V GS = V 5 A Drain-Source On-State Resistance a V R GS = V, I D = 2 A.69.88 DS(on) V GS = 4.5 V, I D = 5 A.84.5 Ω Forward Transconductance a g fs V DS = 5 V, I D = 5 A 75 S Dynamic b Input Capacitance C iss 24 Output Capacitance C oss V DS = 2 V, V GS = V, f = MHz 26 pf Reverse Transfer Capacitance C rss V DS = 2 V, V GS = V, I D = 2 A 37 56 Total Gate Charge Q g 6 24 nc Gate-Source Charge Q gs V DS = 2 V, V GS = 4.5 V, I D = 2 A 6.5 Gate-Drain Charge Q gd 4.5 Gate Resistance R g f = MHz 2.5 5.5 8.5 Ω Turn-On Delay Time t d(on) 3 45 Rise Time t r V DD = 2 V, R L = Ω 5 25 Turn-Off Delay Time t d(off) I D 2 A, V GEN = 4.5 V, R g = Ω 45 7 Fall Time t f 5 25 Turn-On Delay Time t d(on) 9 5 ns Rise Time t r V DD = 2 V, R L = Ω 5 Turn-Off Delay Time t d(off) I D 2 A, V GEN = V, R g = Ω 4 6 Fall Time t f 5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S 4 Pulse Diode Forward Current a I SM A Body Diode Voltage V SD I S = A.8.2 V Body Diode Reverse Recovery Time t rr 22 35 ns Body Diode Reverse Recovery Charge Q rr 4 25 nc I F = 2 A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 S-9-Rev. B, 8-Jan-
SUD5N4-8m8P TYPICAL CHARACTERISTICS 25 C, unless otherwise noted V GS =V thru 5 V 8 V GS =4V 8 - Drain Current (A) I D 6 4 6 4 2 V GS =3V 2 T C = - 55 C..5..5 2. 2.5 V DS - Drain-to-Source Voltage (V) Output Characteristics.5 2 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.2.2.9.6.3 T C = - 55 C - On-Resistance (Ω) R DS(on)..8.6 V GS =4.5V V GS =V. 2 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 32.4 2 4 6 8 On-Resistance vs. Drain Current C - Capacitance (pf) 24 6 8 C iss C oss - Gate-to-Source Voltage (V) V GS 8 6 4 2 I D =2A V DS =V V DS =2V V DS =3V C rss 5 5 2 V DS - Drain-to-Source Voltage (V) Capacitance 2 3 4 Q g - Total Gate Charge (nc) Gate Charge S-9-Rev. B, 8-Jan- 3
SUD5N4-8m8P TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2..7 I D =2A V GS =V T J = 25 C - On-Resistance R DS(on) (Normalized).4..8 V GS =4.5V - Source Current (A) I S.. T J = 5 C T J = - 55 C.5-5 - 25 25 5 75 25 5 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature...2.4.6.8..2 V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.3.6 I D =7.2A - On-Resistance (Ω) R DS(on).25.2.5. T J = 25 C Variance (V) V GS(th).2 -.2 -.6 I D =ma I D = 25 µa T J = 25 C.5 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage -. - 5-25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage 5 4 Limited by R DS(on) * µs Power (W) 3 2 T A = 25 C. Single Pulse BVDSS µs ms ms, ms, DC.... Time (s) Single Pulse, Junction-to-Ambient.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 4 S-9-Rev. B, 8-Jan-
SUD5N4-8m8P TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 6 45 3 5 Package Limited 25 5 75 25 5 T C - Case Temperature ( C) Current Derating*, Junction-to-Case 4. 7 3.5 6 3. 5 Power (W) 2.5 2..5 Power (W) 4 3. 2.5. 25 5 75 25 5 25 5 75 25 5 T J -Junction Temperature ( C) T J -Junction Temperature ( C) Power Derating, Junction-to-Ambient Power Derating, Junction-to-Case * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-9-Rev. B, 8-Jan- 5
SUD5N4-8m8P TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse 3. T JM -T A =P DM Z (t) thja 4. Surface Mounted. -4-3 -2 - Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 8 C/W Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse. -4-3 -2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?68647. 6 S-9-Rev. B, 8-Jan-
Package Information TO-252AA Case Outline E b3 A C2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. L3 A 2.8 2.38.86.94 A -.27 -.5 b.64.88.25.35 b2.76.4.3.45 D H b3 4.95 5.46.95.25 C.46.6.8.24 C2.46.89.8.35 b e e b2 L4 L5 gage plane height (.5 mm) C A L D 5.97 6.22.235.245 D 4. -.6 - E 6.35 6.73.25.265 E 4.32 -.7 - H 9.4.4.37.4 e 2.28 BSC.9 BSC e 4.56 BSC.8 BSC L.4.78.55.7 L3.89.27.35.5 D L4 -.2 -.4 L5..52.4.6 E ECN: T3-359-Rev. O, 3-Jun-3 DWG: 5347 Notes Dimension L3 is for reference only. Xi an, Mingxin, and GEM SH actual photo. Revision: 3-Jun-3 Document Number: 797 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Application Note 826 RECOMMENDED MINIMUM PADS FOR DPAK (TO-252).224 (5.69).9 (2.286).87 (2.22).42 (.668).243 (6.8).8 (4.572).55 (.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 2-Jan-8 3
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