General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant BASE COLLECTOR 2 EMITTER MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856, SBC856 BC857, SBC857 BC858, NSBC858, BC859 Collector-Base oltage BC856, SBC856 BC857, SBC857 BC858, NSBC858, BC859 CEO CBO 65 45 8 5 EmitterBase oltage EBO 5. Collector Current Continuous I C madc Collector Current Peak I C 2 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, (Note ) Derate above 25 C Thermal Resistance, JunctiontoAmbient Total Device Dissipation Alumina Substrate, (Note 2) Derate above 25 C Thermal Resistance, JunctiontoAmbient P D 225.8 mw mw/ C R JA 556 C/W P D 2.4 mw mw/ C R JA 47 C/W Junction and Storage Temperature T J, T stg 55 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR5 = x.75 x.62 in. 2. Alumina =.4 x. x.24 in 99.5% alumina. 2 SOT2 (TO26AB) CASE 8 STYLE 6 MARKING DIAGRAM xx M xx = Device Code xx = (Refer to page 6) M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 24 March, 24 Rev. 4 Publication Order Number: BC856ALT/D
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage BC856, SBC856 Series (BR)CEO 65 (I C = ma) BC857, SBC857 Series BC858, NSBC858 BC859 Series 45 CollectorEmitter Breakdown oltage BC856 S, SBC856eries (I C = A, EB = ) BC857A, SBC857A, BC857B, SBC857B Only BC858, NSB858, BC859 Series CollectorBase Breakdown oltage BC856, SBC856 Series (I C = A) BC857, SBC857 Series BC858, NSBC858, BC859 Series EmitterBase Breakdown oltage BC856, SBC856 Series (I E = A) BC857, SBC857 Series BC858, NSBC858, BC859 Series Collector Cutoff Current ( CB = ) Collector Cutoff Current ( CB =, T A = 5 C) (BR)CES (BR)CBO 8 5 8 5 (BR)EBO 5. 5. 5. I CBO 5 4. na A ON CHARACTERISTICS DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A (I C = A, CE = 5. ) BC856B, SBC856B, BC857B, SBC857B, BC858B, NSBC858B BC857C, SBC857C BC858C h FE 9 5 27 (I C = ma, CE = 5. ) BC856A, SBC856A, BC857A, SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, NSBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 25 22 42 8 29 52 25 475 8 CollectorEmitter Saturation oltage (I C = ma, I B =.5 ma) (I C = ma, I B = 5. ma) BaseEmitter Saturation oltage (I C = ma, I B =.5 ma) (I C = ma, I B = 5. ma) BaseEmitter On oltage (I C = ma, CE = 5. ) (I C = ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = ma, CE = 5. dc, f = MHz) Output Capacitance ( CB =, f = MHz) CE(sat) BE(sat) BE(on).6.7.9..65.75.82 f T MHz C ob 4.5 pf Noise Figure (I C = ma, CE = 5. dc, R S = k, f = khz, BW = 2 Hz) BC856, SBC856, BC857, SBC857, BC858, NSBC858 Series BC859 Series NF 4. db 2
BC857/BC858/BC859/SBC857/NSBC858 hfe, NORMALIZED DC CURRENT GAIN.5.7.5. - CE = - I C, COLLECTOR CURRENT (madc), OLTAGE (OLTS) - -.9 -.7 -.6 -.5 -. - -. BE(sat) @ I C /I B = BE(on) @ CE = - CE(sat) @ I C /I B = -.5 - - -5. - -2-5 - -2 -. - -.5 - - -5. - -2-5 - I C, COLLECTOR CURRENT (madc) Figure. Normalized DC Current Gain Figure 2. Saturation and On oltages - CE, COLLECTOR-EMITTER OLTAGE () -.6 -.2 I C = - ma I C = -2 ma I C = -5 ma -.2 -. - - I B, BASE CURRENT (ma) I C = -2 ma I C = - ma -2 B, TEMPERATURE COEFFICIENT (m/ C) θ.2.6 2.4 2.8-55 C to +25 C - - - - Figure. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 7. 5.. C ib C ob -.6 - - -4. -6. - -2 - -4 R, REERSE OLTAGE (OLTS) f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 2 5 8 6 4 2 -.5 I C, COLLECTOR CURRENT (madc) CE = - - - -. -5. - -2 - -5 Figure 5. Capacitances Figure 6. CurrentGain Bandwidth Product
BC856/SBC856 - hfe, DC CURRENT GAIN (NORMALIZED).5 CE = -5., OLTAGE (OLTS) -.6 - BE(sat) @ I C /I B = BE @ CE = -5. CE(sat) @ I C /I B = -. - - - -5. - -2-5 - -2 - -.5 - - -5. - -2-5 - -2 Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOR-EMITTER OLTAGE (OLTS) - -.6 -.2 I C = - ma -2 ma -5 ma - ma -2 ma -.2 -.5 -. - -.5 - - -5. - I B, BASE CURRENT (ma) -2 B, TEMPERATURE COEFFICIENT (m/ C) θ - -.4 -.8 B for BE -55 C to 25 C -2.2-2.6 -. - -.5 - - -5. - -2-5 - -2 Figure 9. Collector Saturation Region Figure. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 4 2 C ib 8. 6. C ob 4. -. - -.5 - - -5. - -2-5 - R, REERSE OLTAGE (OLTS) f, T CURRENT-GAIN - BANDWIDTH PRODUCT 5 2 5 2 CE = -5. - - - Figure. Capacitance Figure 2. CurrentGain Bandwidth Product 4
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5...7.5..2.. D =.5..5 SINGLE PULSE SINGLE PULSE.5 5. 2 5 2 5 k k 5. k k t, TIME (ms) P (pk) t t2 DUTY CYCLE, D = t /t 2 Z JC (t) = r(t) R JC R JC = 8. C/W MAX Z JA (t) = r(t) R JA R JA = 2 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) R JC (t) Figure. Thermal Response IC, COLLECTOR CURRENT (ma) -2 - -5 - -5. - - BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms -5. - - -45-65 - CE, COLLECTOR-EMITTER OLTAGE () Figure 4. Active Region Safe Operating Area s BC558, BC559 BC557 BC556 The safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 4 is based upon T J(pk) = 5 C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided T J(pk) 5 C. T J(pk) may be calculated from the data in Figure. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 5
ORDERING INFORMATION BC856ALTG SBC856ALTG* BC856ALTG BC856BLTG SBC856BLTG* BC856BLTG SBC856BLTG* BC857ALTG SBC857ALTG* BC857BLTG SBC857BLTG* BC857BLTG NSBC857BLTG* BC857CLTG SBC857CLTG* BC857CLTG BC858ALTG BC858BLTG NSBC858BLTG* BC858BLTG Device Marking Package Shipping A B E F G J K SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) BC858CLTG L SOT2 (PbFree) BC858CLTG SOT2 (PbFree) BC859BLTG BC859BLTG 4B SOT2 (PbFree) SOT2 (PbFree) BC859CLTG BC859CLTG 4C SOT2 (PbFree) SOT2 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable. 6
PACKAGE DIMENSIONS A E A D 2 e b HE SEE IEW C L L IEW C SOT2 (TO26) CASE 88 ISSUE AP c 5 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89..5.4.44 A..6...2.4 b.7.44.5.5.8.2 c.9..8..5.7 D 2.8 2.9.4..4.2 E.2..4.47.5.55 e.78.9 4.7.75.8 L...4.8.2 L.5.54.69.4.2.29 H E 2. 2.4 2.64.8.94.4 STYLE 6: PIN. BASE 2. EMITTER. COLLECTOR SOLDERING FOOTPRINT*.95.7.95.7.79.9.5.8. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 USA Phone: 675275 or 84486 Toll Free USA/Canada Fax: 675276 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 79 29 Japan Customer Focus Center Phone: 85875 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC856ALT/D