Analysis and Simulation of Multilevel DC-link Inverter Topology using Series-Parallel Switches

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Analysis and Simulation of Multilevel DC-link Inverter Topology using Series-Parallel Switches Raj Kiran Pandey 1, Ashok Verma 2, S. S. Thakur 3 1 PG Student, Electrical Engineering Department, S.A.T.I., Vidisha (M.P.), India 2 PG Student, Electrical Engineering Department, S.A.T.I., Vidisha (M.P.), India 3 Assistant Professor, Electrical Engineering Department, S.A.T.I., Vidisha (M.P.), India Abstract: This paper deals with a multilevel dc-link inverter topology with reduced number of series-parallel switches [1]. A large electrical drives and utility application demanding advance power electronics converter to meet a great power requirement [11]. As finding result multilevel power converter structure has been import as a high power and medium voltage situations. A multilevel inverter not only obtaining high power rating but also become better performances of system in relative to harmonics. In this paper modified inverter can get output more numbers of voltage levels with less numbers of switches(which connect in Series-Parallel) as comparable to cascaded H-bridge inverter which results in reduction of installation cost & easy to controlling.the circuit methodology, theoretical description and Matlab based simulation results described in detail in this paper. Keywords: H-bridge, PWM, Switched series-parallel, THD. 1. Introduction A multilevel inverter is a power electronic system that produce a desired output voltage from several levels of dc voltages inputs. Recently, multilevel power conversion technology has been developing the area of power electronics very fastly with good potential for future advancement growth. The most attractive applications of this technology are in the medium to high voltage ranges. The multilevel inverter () is used for high voltage and high power applications. This inverter make staircase (stepped) waveform from several different levels of DC voltage. It have inferior voltage rating of devices, low harmonics distortion, high power quality waveforms, lower switching frequency and losses, higher efficiency, reduction of dv/dt stresses. Because of the above characteristics, it have a prospect of working with low speed semiconductors if its compared with the two level inverters. Many number of topology are available but generally popular topology is diode clamped, flying capacitor and cascaded multilevel Inverter. Diode clamped used in fans; conveyors, and robust applications, one application of the multilevel diodeclamped inverter is an interface between a high-voltage dc transmission line and an ac transmission line [2]. Another application would be as a variable speed drive for highpower medium-voltage (2.4 kv to 13.8 kv) motors as proposed[3,11],efficiency is high for fundamental frequency switching, a voltage unbalancing problem occurred in diode clamped, on the other hand Flying capacitor[5] used in back to back configuration for regenerative system, Real and reactive power flow can be controlled Control is complicated to track the voltage levels for all of the capacitors Switching utilization and efficiency are poor for real power transmission[10,11], a pre voltage initialization across capacitors necessary for this type of. but Cascaded H-bridge can used for high voltage& power rating.[4,7] The major disadvantage of Cascaded H-bridge is consisting more numbers of switches (for gaining one more level, switches increased linearly by four) and switching losses get increased[9]. So switching losses have affected the output voltage and overall efficiency also. The Modified Inverter topology gives more number of voltage level using less number of switches. The modified inverter topology has also improved the THD. 2. Circuit Description In Modified,there are two parts, one part is H-bridge with a single DC source and another part is an inverter circuit which connected in cascaded. In second part of modified the DC voltage source in inverter circuit is in parallel by various combination of switches[1]. The DC voltage source of H-bridge inverter is V 0, i.e. independent on another inverter circuit voltage V k (k = 0,1,2..n). We assuming a fix ratio for various voltage levels V 0 :V k (k = 0,1,2 n). such as an example for 15-level 1:3 ratio assumed. DC voltage source with switches (Sa-San_1 & Sb-Sbn_1) can extendable for higher number of level, taken assuming a changeable value of fix ratio. In conventional CHB there are 12 switches used for 11 level & 16 switches with hybrid modulation technique on other hand only 11 switches used for 11 level, 14 switches for 15 level assuming 1:2 ratio in modified topology. There are 11 switches used for 15 level assuming 1:3 ratio in modified topology and 12 switches used in conventional. A basic formula can obtain for multilevel on basis of analysis is: N= 4n+3 The structure circuit diagram is shown in fig.1. In the circuit analysis the dc voltage source can be connected in series and parallel connection by different combination of switches. In fig. 1 voltage source connect in both way, we already know that in parallel connection, equivalent voltage can be equal to voltage, when parallel voltages have equally, so when switch Sa1 will OFF and switch Sb1 & Paper ID: 02015321 364

Sc1 is in ON state dc voltage sources is in parallel combination. When switch Sa1 is ON, voltage source is in series connection. Both parallel switches having same gate pulses. Table 1: Comparison between different topology for 15 level. type Cascaded H-bridge Diode clamped Flying capacitor Modified IGBT 28 28 28 10 Bypass - - - - diodes Clamping - 24 - - diodes DC split - 6 6 - capacitors Clamping - - 12 - capacitors DC 7 1 1 3 source Total 35 59 47 13 Figure 1: Structure of the modified (4n+3) level inverter with series-parallel connected switch But in fig. 2 only dc series connection is possible because there is an absence of a switch to be a parallel connection. So series connection has same output level with reduced switch, low switching loss has occurred. In this connection method only 10 switches used for 11 level, 12 switches for 15 level assuming 1:2 ratio in circuit topology. Here only 10 switches used for 15 level assuming 1:3 ratio in modified topology and 12 switches used in conventional. In this paper we discuss about only dc voltage series combination. In this circuit we used IGBT switch only at place of MOSFET to reducing switching loss. 3. Circuit Operation In fig. 3 the basic structure of 15 level modified shown. There are two cycles (+ve & -ve) by which 15 level output voltage obtained. The whole operation phenomenon shown in table 2 and table 3. Figure 3: Basic structure of 15 level modified inverter Figure 2: Structure of the modified (4n+3) level inverter with only series connected switch One more thing if we don t have reverse power flow in circuit, replacing IGBT (Sb-Sbn_1) switches by diodes. For a resistive load both current & voltage are in same phase, so no reverse power flowing but in case of RL load output current lags voltage and having chances to reverse power flowing, in such case IGBT replaced by diodes. In this modified topology, we take assuming a 1:3 ratio for 15 level. Table 2: Operation of +ve mode 15 level modified topology Operating Current Paths Modes Level-1 +Vo S5 Load S4 S2 S8 -Vo (+Vdc) Level-2 +V1 S1 S7 Vo S6 Load S4 Sb1 - (+2Vdc) V1 Level-3 +V1 S1 S8 S6 Load S4 Sb1 -V1 (+3Vdc) Level-4 +V1 S1 S8 Vo S5 Load S4 Sb1 - (+4Vdc) V1 Level-5 +V2 Sa1 V1 S1 S7 Vo S6 Load S (+5Vdc) 4 -V2 Level-6 +V2 Sa1 V1 S1 S8 S6 Load S4 - (+6Vdc) V2 Level-7 +V2 Sa1 V1 S1 S8 Vo S5 Load S (+7Vdc) 4 -V2 Paper ID: 02015321 365

Table 3: Operation of -ve mode 15 level modified topology Operating Current Paths Modes Level-8 S2 S8 S6 Load S4 (0Vdc) Level-9 +Vo S7 S2 S4 Load S6 -Vo (-Vdc) Level-10 (-2Vdc) Level-11 (-3Vdc) Level-12 (-4Vdc) Level-13 (-5Vdc) Level-14 (-6Vdc) Level-15 (-7Vdc) 4. Modulation Strategy +V1 S3 Load S5 Vo S8 S2 Sb1 -V1 +V1 S3 Load S6 S8 S2 Sb1 -V1 +V1 S3 Load S6 Vo S7 S2 Sb1 -V1 +V2 Sa1 V1 S3 Load S5 Vo S8 S2 -V2 +V2 Sa1 V1 S3 Load S6 S8 S2 -V2 +V2 Sa1 V1 S3 Load S6 Vo S7 S2 -V2 There are different types of modulation techniques used in for generating gate pulses. In Modified we are using Phase disposition pulse width modulation scheme, in which multi carrier waves have in phase [6]. PD waveforms for modified inverter are shown in fig.4. PWM technique used in because it better control the output voltage, regulate the output voltage and control the harmonics presented in the output voltage. We know that for N level output N-1 carrier waves are used. All carrier signals have same frequency [10]. Two parameters, which is used in PWM scheme with related to harmonics known as Modulation index &Frequency modulation ratio. Modulation index is defined as the ratio of amplitude of reference signal to carrier signal. Figure 4: PD modulation scheme with reference and multi carrier signals A reference sine wave is compared with multi carrier waves with relational operator. In proposed 15 level, 14 carrier generators are used and compare it with reference sine wave finding different comparable pulses are combined by an adder and then it would again comparing with different constant values (0-14), after this obtaining various pulses we have grouping different pulses with EX-OR logic gates for selecting exact controlling signal to switches.the gate control circuit is heart of any multi-level inverter. The switching circuit is shown in figure 5. Where N is no. of voltage level If Modulation index reduces, harmonic components gets increased so modulation index having maximum value ( =1) as possible to overcome this problem. Another parameter Frequency modulation ratio is defined as ratio of frequency of carrier signal to reference signal. Harmonic components presents in output voltage as function of m f, (1) (2) (3) Figure 5: Comparator circuit of 15 level modified Table 4:.Digital combinational table for switching pulses SWITCH DIGITAL PROCESS ( shows EX-OR operator) S1 C0 C1 C2 C3 C4 C5 S2 S1 Connect with NOT gate S3 S4 Connect with NOT gate S4 S1 C6 C7 C8 S5 S8 C0 C3 C6 C7 C9 C12 S6 S5 Connect with NOT gate S7 C2 C5 C7 C8 C12 C14 S8 S7 Connect with NOT gate Sa1 C0 C1 C2 C12 C13 C14 Sb1 S1 C0 C1 C2 C9 C10 C11 Paper ID: 02015321 366

Where C0-C14 is constant comparable pulses and S1-Sb1 is main switches. Figure 8: simulated output current for 11 level modified Figure 6: Firing pulses for switches 5. Simulation Result Under this subpart, simulation result of the 11& 15 level modified is synthesized using MATLAB 2013a. Load parameters taken R=3 ohm &L=6 mh. Figure 9: FFT window for 11 level o/p voltage Figure 7: simulated output voltage for 11 level modified Figure 10: simulated output voltage for 15 level modified. Paper ID: 02015321 367

Figure 11: simulated output current for 15 level modified Figure 12: FFT window for 15 level o/p voltage 6. Conclusion The modified multilevel inverter has obtained low harmonics content, low switching losses, high power and high output voltage level. It has used less number of switches as compare to conventional inverter. In this circuit we used IGBT switch only at place of MOSFET to reducing switching loss. Modified inverter has simulated at various modulation index. In this paper we have comparative study on 11 level & 15 level at different modulation index. This topology obtained 1.50% THD at modulation index 1 at fundamental max frequency. So this topology has low power consumption and having less size. Table 5:.Comparison of THD between 11& 15 level at different modulation index Modulation index THD(11 level) % THD(15 level) % 1 2.27 1.50 0.97 2.10 1.58 0.95 2.04 1.75 0.90 2.45 1.79 7. Future Improvement There are many future scope improvements in this study like reducing THD using various PWM techniques. For taking low ON time period to generating multilevel outputs. Uses a LC type filter to obtaining smooth voltage & Current waveforms. References [1] Y. Hinago and H. Koizumi, A single phase multilevel inverter using switched series/parallel DC voltage sources, IEEE Trans. Ind. Electron., vol. 57, no.8,pp.2643 2650, Aug. 2010. [2] Kimura, S. Oba, H. Kato, Y. Arase, T. Kikuchi, and M. Ito, Hybrid system development for the LS600h,ǁ Toyota Tech. Rev., vol. 56, no. 1, pp. 40 47, Apr. 2008, (in Japanese). [3] O. C. Mak and A. Ioinovici, Switched-capacitor inverter with high power density and enhanced regulation capability,ǁ IEEE Trans. Circuits Syst. I, Fund. Theory Appl., vol. 45, no. 4, pp. 336 348, Apr. 1998. [4] J. Rodriguez, J.-S. Lai, and F. Z. Peng, Multilevel inverters: A survey of topologies, controls, and applications, IEEE Trans. Ind. Electron., vol. 49, no. 4, pp. 724 738, Aug. 2002. ectron, vol. 57, no. 8, pp. 2643-2650, 2010. [5] Nabae, I. Takahashi, and H. Akagi, A new neutralpoint-clamped PWM inverter,ǁ IEEE Trans. Ind. Appl., vol. IA-17, no. 5, pp. 518 523,Sep. 1981. [6] H. Liu, L. M. Tolbert, S. Khomfoi, B. Ozpineci, and Z. Du, Hybrid cascaded multilevel inverter with PWM control method,ǁ in Proc. IEEE Power Electron. Spec. Conf., Jun. 2008, pp. 162 166. [7] P. Lezana, J. Rodriguez, and D. A. Oyarzun, Cascaded multilevel inverter with regeneration capability and reduced number of switches,ǁ IEEE Trans. Ind. Electron., vol. 55, no. 3, pp. 1059 1066, Mar. 2008. [8] L. G. Franquelo, J. Rodriguez, J. I. Leon, S. Kouro, R. Portillo, and M. A. M. Prats, The age of multilevel converters arrives,ǁ IEEE Ind. Electron. Mag., vol. 2, no. 2, pp. 28 39, Jun. 2008. [9] Bierhoff, M.H., Fuchs,.W. Semiconductor losses in voltage source and current source IGBT converters based on analytical derivation, Power Electronics Specialists Conference PESC 04, IEEE 35th Annual, Vol.4, pp. 2836 2842, 2004. [10] B. P. McGrath, D. G. Holmes, M. Manjrekar, and T. A. Lipo, Improved modulation strategy for a hybrid multilevel inverter, in Conf. Rec. IEEE-IAS Annu. Meeting, pp.2086 2093, 2000 [11] Leon M. Tolbert, Fang Z. Peng, "Multilevel Converters for Large Electric Drives," IEEE Applied Power Electronics Conference, Feb. 15-19, 1998, Anaheim, California, pp. 530-536 Author Profile Raj Kiran Pandey received the B.Tech. Degree in Electronics &Communication Engineering from CET Moradabad in 2009 and Paper ID: 02015321 368

Pursuing his M.E. degree in Power Electronics Engineering from Samrat Ashok Technological Institute Vidisha. Ashok Verma received the B.E. degree in Electrical &Electronics Engineering from AITR Bhopal in 2012 and Pursuing his M.E. degree in EM&D Engineering from Samrat Ashok Technological Institute Vidisha. Shivendra Singh Thakur is currently working as an assistant professor in Electrical Engineering Department, Samrat Ashok Technological Institute Vidisha. Paper ID: 02015321 369