LOW DROPOUT CMOS VOLTAGE REGULATOR S-818 Series

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Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR The is a positive voltage regulator developed utilizing CMOS technology featured by low dropout voltage, high output voltage accuracy and low current consumption. Built-in low on-resistance transistor provides low dropout voltage and large output current. A ceramic capacitor of 2 µf or more can be used as an output capacitor. A power-off circuit ensures long battery life. The SOT-23-5 miniaturized package and the SOT-89-5 package are recommended for configuring portable devices and large output current applications, respectively. Features y Low current consumption During operation: Typ. 3 µa, Max. 4 µa During power off: Typ. 1 na, Max. 5 na y Output voltage:.1 V steps between 2. and 6. V y High accuracy output voltage: ±2.% y Peak output current; 2 ma capable (3. V output product, VIN=4 V) Note 3 ma capable (5. V output product, VIN=6 V) Note y Low dropout voltage Typ. 17 mv (5. V output product, IOUT = 6 ma) A ceramic capacitor (2 µf or more) can be used as an output capacitor. y Built-in power-off circuit y Compact package: SOT-23-5, SOT-89-5 Applications y Power source for battery-powered devices y Power source for personal communication devices y Power source for home electric/electronic appliances Note : Please consider power dissipation of the package when the output current is large. Package y 5-pin SOT-23-5 (Package drawing code: MP5-A) y 5-pin SOT-89-5 (Package drawing code: UP5-A) Seiko Instruments Inc. 1

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 Block Diagram *1 VIN VOUT ON/OFF ON/OFF circuit Reference voltage VSS *1: Parasitic diode Figure 1 Block Diagram Selection Guide 1. Product Name S-818x xx A xx - xxx - T2 IC orientation in taping specifications Product abbreviation Package type MC : SOT-23-5 UC : SOT-89-5 Output voltage x 1 Product type A: ON/OFF pin has positive logic (high active) B: ON/OFF pin has negative logic (low active) Table 1 Selection Guide Output Voltage SOT-23-5 SOT-89-5 2. V ± 2.% S-818A2AMC-BGA-T2 S-818A2AUC-BGA-T2 2.5 V ± 2.% S-818A25AMC-BGF-T2 S-818A25AUC-BGF-T2 2.8 V ± 2.% S-818A28AMC-BGI-T2 S-818A28AUC-BGI-T2 3. V ± 2.% S-818A3AMC-BGK-T2 S-818A3AUC-BGK-T2 3.3 V ± 2.% S-818A33AMC-BGN-T2 S-818A33AUC-BGN-T2 3.8 V ± 2.% S-818A38AMC-BGS-T2 S-818A38AUC-BGS-T2 4. V ± 2.% S-818A4AMC-BGU-T2 S-818A4AUC-BGU-T2 5. V ± 2.% S-818A5AMC-BHE-T2 S-818A5AUC-BHE-T2 Note: Contact SII sales division for product with an output voltage other than those specified above or product type B, low active product. 2 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR Pin Configuration Please refer to the package drawings at the end of this document for details. Table 2 Pin Assignment SOT-23-5 Top view 5 4 1 2 3 Figure 2 SOT-23-5 Pin No. Symbol Description 1 VIN Voltage input pin 2 VSS GND pin 3 ON/OFF Power off pin 4 NC Note No connection 5 VOUT Voltage output pin SOT-89-5 Top view 5 4 Table 3 Pin Assignment Pin No. Symbol Description 1 VOUT Voltage output pin 2 VSS GND pin 3 NC Note No connection 4 ON/OFF Power off pin 5 VIN Voltage input pin 1 2 3 Figure 3 SOT-89-5 Note: NC means electrical open. Connecting NC pin to VIN or VSS is allowed. Absolute Maximum Ratings Table 4 Absolute Maximum Ratings (Ta=25 C unless otherwise specified) Parameter Symbol Absolute Maximum Rating Unit Input voltage VIN 12 V VON / OFF VSS-.3 to 12 V Output voltage VOUT VSS-.3 to VIN+.3 V Power dissipation PD 25 (SOT-23-5) mw 5 (SOT-89-5) Operating temperature range Tope -4 to +85 C Storage temperature range Tstg -4 to +125 C The IC has a protection circuit against static electricity. DO NOT apply high static electricity or high voltage that exceeds the performance of the protection circuit to the IC. Seiko Instruments Inc. 3

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 Electrical Characteristics S-818AXXAMC/UC, S-818BXXAMC/UC Table 5 Electrical Characteristics (Ta=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Test circuit s Output voltage *1) V OUT(E) V IN=V OUT(S)+1V,I OUT=3mA V OUT(S).98 V OUT(S) V OUT(S) 1.2 V 1 Output current *2) I OUT V OUT(S)+1V 2.V V OUT(S) 2.4V 1 *5) ma 3 V IN 1V 2. V OUT(S) 2.9V 15 *5) ma 3 3.V V OUT(S) 3.9V 2 *5) ma 3 4.V V OUT(S) 4.9V 25 *5) ma 3 5.V V OUT(S) 6.V 3 *5) ma 3 Dropout voltage *3) Vdrop I OUT = 2.V V OUT(S) 2.4V.51.87 V 1 6mA 2. V OUT(S) 2.9V.38.61 V 1 3.V V OUT(S) 3.4V.3.44 V 1 3. V OUT(S) 3.9V.24.33 V 1 4.V V OUT(S) 4.4V.2.26 V 1 4. V OUT(S) 4.9V.18.22 V 1 5.V V OUT(S) 5.4V.17.21 V 1 5. V OUT(S) 6.V.17.2 V 1 Line regulation 1 VOUT1 1 V IN VOUT V OUT(S) +.5 V V IN 1 V, I OUT = 3mA.5.2 %/V 1 Line regulation 2 VOUT2 1 V OUT(S) +.5 V V IN 1 V,.5.2 %/V 1 V IN VOUT I OUT = 1µA Load regulation V OUT3 V IN = V OUT(S) + 1 V, 1µA I OUT 8mA 3 5 mv 1 Output voltage temperature VOUT 1 V IN = V OUT(S) + 1 V, I OUT = 3mA ±1 ppm 1 coefficient *4) Ta VOUT -4 C Ta 85 C / C Current consumption during I SS1 V IN = V OUT(S) + 1 V, 3 4 µa 2 operation ON/OFF pin = ON, no load Current consumption when I SS2 V IN = V OUT(S) + 1 V,.1.5 µa 2 power off ON/OFF pin = OFF, no load Input voltage V IN 1 V 1 Power-off pin input voltage "H" V SH V IN = V OUT(S) + 1 V, R L = 1kΩ, 1.5 V 4 Judged by V OUT output level. Power-off pin input voltage "L" V SL V IN = V OUT(S) + 1 V, R L = 1kΩ,.3 V 4 Judged by V OUT output level. Power-off pin input current "H" I SH V IN = V OUT(S) + 1 V,.1 µa 4 ON/OFF = 7 V Power-off pin input current "L" I SL V IN = V OUT(S) + 1 V, -.1 µa 4 ON/OFF = V Ripple rejection RR V IN = V OUT(S) + 1 V, f = 1Hz, Vrip =.5 V p-p, IOUT=3mA 45 db 5 *1) V OUT(S)=Specified output voltage V OUT(E)=Effective output voltage, i.e., the output voltage at fixet I OUT(=3 ma) and input V OUT(S)+1. V. *2) Output current when the output voltage goes below 95% of V OUT(E) after gradually increasing output current. *3) Vdrop = V IN1-(V OUT(E).98) V IN1 = Input voltage when output voltage falls 98% of V OUT(E) after gradually decreasing input voltage. *4) Output voltage shift by temperature [mv/ C] is calculated using the following equation. V OUT [mv/ C] = VOUT(S)[V] [ppm/ C] 1 Ta Ta V OUT Specified output voltage Output voltage shift by temperature V OUT *5) Peak output current can exceed the minimum value. Output voltage temperature coefficient 4 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR Test Circuits 1. 2. VIN VOUT A A VIN VOUT ON/OFF VSS Set to power ON V ON/OFF VSS Set to V IN or GND 3. 4. VIN VOUT A VIN VOUT ON/OFF VSS Set to power ON V A ON/OFF VSS V R L 5. VIN VOUT ON/ OFF VSS Set to power ON V R L Figure 4 Test Circuits Standard Circuit INPUT CIN VIN VSS VOUT OUTPUT CL In addition to a tantalum capacitor, a ceramic capacitor of 2 µf or more can be used in CL. CIN is a capacitor used to stabilize input. Use a capacitor of.47 µf or more. Single GND GND Operating Conditions Figure 5 Standard Circuit Input capacitor (C IN ) :.47 µf or more Output capacitor (C L ) : 2 µf or more Equivalent Series Resistor (ESR) : 1 Ω or less Input Series Resistor (R IN ) : 1 Ω or less Seiko Instruments Inc. 5

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 Technical Terms 1. Low dropout voltage regulator The low dropout voltage regulator is a voltage regulator having a low dropout voltage characteristic due to the internal low on-resistance transistor. 2. Output voltage (VOUT) The accuracy of the output voltage is ensured at ± 2.% under the specified conditions of input voltage, output current, and temperature, which differ product by product. Note: When the above conditions are changed, the output voltage may vary and go out of the accuracy range of the output voltage. See the electrical characteristics and characteristic data for details. 3. Line regulations 1 and 2 ( VOUT1, VOUT2) Line regulation indicates the input voltage dependence of the output voltage. The value shows how much the output voltage changes due to the change of the input voltage when the output current is kept constant. 4. Load regulation ( VOUT3) Load regulation indicates the output current dependence of output voltage. The value shows how much the output voltage changes due to the change of the output current when the input voltage is kept constant. 5. Dropout voltage (Vdrop) Let VIN1 be an input voltage where the output voltage falls to the 98% of the actual output voltage VOUT(E) when gradually decreasing input voltage. The dropout voltage is the difference between the VIN1 and the resultant output voltage defined as following equation. Vdrop = V IN 1-[V OUT (E).98] 6. Temperature coefficient of output voltage [ V OUT /( Ta V OUT )] The shadowed area in Figure 6 is the range where V OUT varies in the operating temperature range when the temperature coefficient of the output voltage is ±1 ppm/ C. VOUT Typical Example of the S-818A28A [V] +.28mV/ C OUT(E) V OUT (E) is a mesured value of output voltage at 25 C. -.28mV/ C -4 25 85 Ta [ C] Figure 6 Temperature coefficient range of output voltage A change of output voltage in temperature [mv/ C] is calculated using the following equation. V OUT V OUT [mv/ C] = VOUT(S)[V] [ppm/ C] 1 Ta Ta V OUT Specified output voltage Change of output voltage in temperatures Output voltage temperature coefficient 6 Seiko Instruments Inc.

Rev.1.2 Operation LOW DROPOUT CMOS VOLTAGE REGULATOR VIN 1. Basic operation Figure 7 shows the block diagram of the S-818 Series. The error amplifier compares a reference voltage V REF with the part of the output voltage divided by the feedback resistors Rs and Rf. It supplies the output transistor with the gate voltage, necessary to ensure certain output voltage free of any fluctuations of input voltage and temperature. Current source Vref Reference voltage circuit Error amplifier Rf Rs *1 VOUT VSS *1 Parasitic diode Figure 7 Typical Circuit Block Diagram 2. Output transistor The uses a low on-resistance Pch MOS FET as the output transistor. Be sure that VOUT does not exceed VIN+.3 V to prevent the voltage regulator from being broken due to inverse current flowing from VOUT pin to VIN pin through the parasitic diode. 3. Power Off Pin (ON/OFF Pin) This pin activates and inactivates the regulator. When the ON/OFF pin is switched to the power off level, the operation of all internal circuit stops, the built-in Pch MOSFET output transistor between VIN and VOUT pin is switched off, suppressing current consumption. The VOUT pin goes to the Vss level due to internal divided resistance of several MΩ between VOUT pin and VSS pin. The structure of the ON/OFF pin is shown in Figure 8. Since the ON/OFF pin is neither pulled down nor pulled up internally, do not keep it in the floating state. Current consumption increases if a voltage of.3 V to VIN-.3 V is applied to the ON/OFF pin. When the power off pin is not used, connect it to the VIN pin for product type "A" and to the VSS pin for product type "B". Product type Table 6 Power off pin function by product type ON/OFF pin Internal circuit VOUT pin voltage Current consumption A H : Power on Operating Set value Iss1 A L : Power off Stop VSS level Iss2 B H : Power off Stop VSS level Iss2 B L : Power on Operating Set value Iss1 ON/OFF VIN Figure 8 ON/OFF VSS Pin Seiko Instruments Inc. 7

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 Selection of Output Capacitor (CL) The S-818 series needs an output capacitor between VOUT pin and VSS pin for phase compensation. A small ceramic or an OS electrolytic capacitor of 2 µf or more can be used. If a tantalum or an aluminum electrolytic capacitor is used, its capacitance must be 2 µf or more and the ESR must be 1 Ω or less. Attention should be paid not to cause an oscillation due to increase of ESR at low temperatures when using an aluminum electrolytic capacitor. Evaluate the performance including temperature characteristics before prototyping the circuit. Overshoot and undershoot characteristics differ depending upon the type of the output capacitor. Refer to output capacitor dependence data in transient response characteristics. Design Considerations Design wiring patterns for VIN, VOUT and GND pins to decrease impedance. When mounting an output capacitor, connection from the capacitor to the VOUT pin and to the VSS pin should be as close as possible. Note that output voltage may increase when the voltage regulator is used at low load current (less than 1 µa). To prevent oscillation, it is recommended to use the external components under the following conditions: * Input capacitor (CIN):.47 µf or more * Output capacitor (CL): 2 µf or more * Equivalent Series Resistance (ESR): 1 Ω or less * Input series resistance (RIN): 1 Ω or less The voltage regulator may oscillate when the impedance of the power supply is high and the input capacitor is small or not connected. Be sure that input voltage and load current do not exceed the power dissipation level of the package. SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party. In determining necessary output current, consider the value of output current of Table 4 Electrical Characteristics and Note *5) (page 4). 8 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR Typical Characteristics (Typical Data) (1) OUTPUT VOLTAGE vs. OUTPUT CURRENT (When load current increases) S-818A2A(Ta=25 C) S-818A3A(Ta=25 C) VOUT(V) 2. 1.. 2. V IN=2. 4V 1V.2.4.6.8 I OUT (A) VOUT(V) 3. 2. 1.. 1V 6V 4V 3. V IN=3..2.4.6.8 I OUT (A) S-818A5A(Ta=25 C) 6. VOUT(V) 5. 4. 3. 2. 1.. 5. V IN=5. 7V 6V 1V 8V.2.4.6.8 I OUT (A) (2) OUTPUT VOLTAGE vs. INPUT VOLTAGE S-818A2A (Ta=25 C) 2.5 Iout=1uA 1uA V (V) 2. 1.5 1. 1mA 3mA 6mA 1 2 3 4 V ). (V) S-818A3A (Ta=25 C) 3.5 Iout=1uA 1uA 3. 1mA V (V) 2.5 2. 1.5 * In determining necessary output current, consider the following parameters: Minimum value of output current in Table 4 Electrical Characteristics and Note *5) (page 4); Power dissipation of the package 6mA 3mA 2 3 4 5 V ). (V) S-818A5A (Ta=25 C) 5.5 Iout=1uA 1uA 1mA 5. V (V) 4.5 3mA 6mA 4. 4 5 6 7 V ). (V) Seiko Instruments Inc. 9

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 (3) MAXIMUM OUTPUT CURRENT vs. INPUT VOLTAGE S-818A2A.8 Ta=-4 C.6 IOUTmax(A) 25 C.4 85 C.2 S-818A3A.8 IOUTmax(A).6.4.2 Ta=-4 C 85 C 25 C. 2 4 6 8 1 V IN (V). 2 4 6 8 1 V IN (V) S-818A5A.8 IOUTmax(A).6.4.2 25 C Ta=-4 C 85 C * In determining necessary output current, consider the following parameters: Minimum value of output current in Table 4 Electrical Characteristics and Note *5) (page 4); Power dissipation of the package. 2 4 6 8 1 V IN (V) (4) DROPOUT VOLTAGE vs. OUTPUT CURRENT S-818A2A 2 S-818A3A 2 Vdrop(mV) 15 1 5 85 C 25 C Ta=-4 C Vdrop(mV) 15 1 5 85 C 25 C Ta=-4 C 5 1 15 2 25 3 I /54(mA) 1 2 3 4 I /54(mA) S-818A5A 2 Vdrop(mV) 15 1 5 85 C 25 C Ta=-4 C 1 2 3 4 5 6 I /54(mA) 1 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR (5) OUTPUT VOLTAGE TEMPERATURE DEPENDENCE S-818A2A V IN =, I OUT =3mA S-818A3A 2.4 3.6 V IN =4V, I OUT =3mA 2.2 3.3 VOUT(V) 2. 1.98 VOUT(V) 3. 2.97 1.96-5 5 1 Ta( C) 2.94-5 5 1 Ta( C) S-818A5A 5.1 V IN =6V, I OUT =3mA 5.5 VOUT(V) 5. 4.95 4.9-5 5 1 Ta( C) (6) LINE REGULATION TEMPERATURE DEPENDENCE S-818A2/3/5A 35 V 1(mV) 3 25 2 15 1 5 V /54 =2V V ).=V /54 (S)+.5 1V,I /54 =3mA -5 5 1 Ta( C) (7) LOAD REGULATION TEMPERATURE DEPENDENCE S-818A2/3/5A 5 V 3(mV) 4 3 2 1 V ).=V /54 (S)+1V,I /54 =1uA 8mA V /54 =2V -5 5 1 Ta( C) Seiko Instruments Inc. 11

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 (8) CURRENTCONSUMPTION vs. INPUT VOLTAGE S-818A2A 4 I 1(uA) 3 2 1 25 C 85 C Ta=-4 C 2 4 6 8 1 V ).(V) S-818A3A 4 I 1(uA) 3 2 1 Ta=-4 C 85 C 25 C 2 4 6 8 1 V ).(V) S-818A5A 4 3 I 1(uA) 2 1 Ta=-4 C 85 C 25 C 2 4 6 8 1 V ).(V) (9) THRESHOLD VOLTAGE OF POWER OFF PIN vs. INPUT VOLTAGE S-818A2A S-818A3A 2.5 2.5 VSH/VSL(V) 2. 1.5 1. V SH VSH/VSL(V) 2. 1.5 1. V SH.5.5. V SL 2 4 6 8 1 V IN (V). V SL 3 5 7 8 1 V IN (V) S-818A5A 2.5 VSH/VSL(V) 2. 1.5 1..5. V SH V SL 5 6 8 9 1 V IN (V) 12 Seiko Instruments Inc.

Rev.1.2 (1) RIPPLE REDUCTION RATE S-818A2A LOW DROPOUT CMOS VOLTAGE REGULATOR V IN = I OUT =3mA C IN =NoneC OUT =2µF.p-p Ta=25 C -2-4 Gain (db) -6-8 -1.1 1 f (khz) 1 1 S-818A3A V IN =4V I OUT =3mA C IN =NoneC OUT =2µF.p-p Ta=25 C -2-4 Gain (db) -6-8 -1.1 1 f (khz) 1 1 S-818A5A V IN =6V I OUT =3mA C IN =NoneC OUT =2µF.p-p Ta=25 C -2-4 Gain (db) -6-8 -1.1 1 f (khz) 1 1 Seiko Instruments Inc. 13

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 REFERENCE DATA TRANSIENT RESPONSE CHARACTERISTICS (S-818A3A, Typical data: Ta=25 C) INPUT VOLTAGE or LOAD CURRENT Overshoot OUTPUT VOLTAGE Undershoot (1) Power on V IN = 1V I OUT =3mA 1V V CL=4.7µF VOUT(./div) V IN V OUT CL=2µF V TIME(5usec/div) 1..8.6.4.2. Load dependence of overshoot V IN = V OUT (S)+1V, CL=2µF 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ I OUT (A) VDD dependence of overshoot 1..8.6.4.2. Output capacitor (CL) dependence of overshoot V IN = V OUT (S)+1V, I OUT =3mA 1 1 1 CL(µF) Temperature dependence of overshoot 1..8.6.4.2 V IN = VDD, I OUT =3mA,CL=2µF 1..8.6.4.2 V IN = V /54 (S)+1V, I OUT =3mA,CL=2µF. 2 4 6 8 1 VDD(V). -5 5 1 Ta( C 14 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR (2) Power on/off control 1V V V IN =1V ON/OFF= 1V I OUT =3mA CL=4.7µF VOUT(./div) V IN V OUT CL=2µF V 1..8.6.4.2 TIME(5usec/div) Load dependence of overshoot V IN =V OUT (S)+1V, CL=2µF, ON/OFF= V OUT (S)+1V 1..8.6.4.2 Output capacitor (CL) dependence of overshoot V IN =V OUT (S)+1V I OUT =3mA, ON/OFF= V OUT (S)+1V. 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ I OUT (A) VDD dependence of overshoot. 1 1 1 CL(uF) Temperature dependence of overshoot 1..8.6.4.2. V IN =VDD,I OUT =3mA, CL=2µF, ON/OFF= VDD 2 4 6 8 1 VDD(V) V IN =V OUT (S)+1V,I OUT =3mA, CL=2µF, ON/OFF= V OUT (S)+1V 1..8.6.4.2. -5 5 1 Ta C Seiko Instruments Inc. 15

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 (3) Power fluctuation V IN =4 1V I OUT =3mA V IN =1 4V I OUT =3mA VOUT(.2V/div) 1V 4V V IN V OUT CL=2µF CL=4.7µF VOUT(.2V/div) 1V 4V V IN V OUT CL=4.7µF CL=2µF.6 TIME(5usec/div) Load dependence of overshoot V IN =V OUT (S)+1V V OUT (S)+2V,CL=2µF TIME(5usec/div) Output capacitor (CL) dependence of overshoot V IN =V OUT (S)+1V V OUT (S)+2V, I OUT =3mA.5.4.2 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ I OUT (A).4.3.2.1 1 1 1 CL(uF).6.4.2 VDD dependence of overshoot V IN =V OUT (S)+1V VDD, I OUT =3mA,CL=2µF 2 4 6 8 1 VDD(V).4.3.2.1 Temperature dependence of overshoot V IN =V OUT (S)+1V V OUT (S)+2V, I OUT =3mA,CL=2µF.6.5-5 5 1 Ta C 16 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR Under Shoot(V) Under Shoot(V).3.2.1 Load dependence of undershoot V IN =V OUT (S)+2V V OUT (S)+1V,CL=2µF 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ I OUT (A) VDD dependence of undershoot V IN =VDD V OUT (S)+1V, I OUT =3mA,CL=2µF.2.15.1.5 2 4 6 8 1 VDD(V) Under Shoot(V) Under Shoot(V) Output capacitor (CL) dependence of undershoot V IN =V OUT (S)+2V V OUT (S)+1V,I OUT =3mA.5.4.3.2.1.6.5.4.3.2.1 1 1 1 CL(uF) Temperature dependence of undershoot V IN =V OUT (S)+2V V OUT (S)+1V, I OUT =3mA,CL=2µF -5 5 1 Ta( C) Seiko Instruments Inc. 17

LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2 (4) Load fluctuation I OUT =1µA 3mA V IN =4V I OUT =3mA 1µA V IN =4V 3mA 3mA VOUT(.2V/div) 1µA I OUT V OUT CL=2µF VOUT(.1V/div) 1µA I OUT CL=2µF CL=4.7µF CL=4.7µF V OUT TIME(5µsec/div) TIME(2msec/div) 1. Load current dependence of load fluctuation overshoot I OUT shows larger load current at load current fluctuation while smaller current is fixed to 1 µa. For example I OUT=1.E-2 (A) means load current fluctuation from 1 ma to 1 µa. V IN =V OUT (S)+1V,CL=2µF Output capacitor (CL) dependence of overshoot.2 V IN =V OUT (S)+1V,I OUT =3mA 1µA.8.6.4.2. 1.E-3 1.E-2 1.E-1 1.E+ I OUT (A).15.1.5 1 1 1 CL(uF) VDD dependence of overshoot Temperature dependence of overshoot.3 V IN =VDD, I OUT =3mA 1µA,CL=2µF V IN =V OUT (S)+1V,I OUT =3mA 1µA,CL=2µF.3.2.1 2 4 6 8 1 VDD(V).25.2.15.1.5-5 5 1 Ta( C) 18 Seiko Instruments Inc.

Rev.1.2 LOW DROPOUT CMOS VOLTAGE REGULATOR 1. Load current dependence of load fluctuation undershoot I OUT shows larger load current at load current fluctuation while smaller current is fixed to 1 µa. For example I OUT=1.E-2 (A) means load current fluctuation from 1 µa to 1 ma. Output capacitor (CL) dependence of undershoot V IN =V OUT (S)+1V,CL=2µF.4 V IN =V OUT (S)+1V,I OUT =1µA 3mA Under Shoot(V).8.6.4.2. 1.E-3 1.E-2 1.E-1 1.E+ I OUT (A) Under Shoot(V).3.2.1 1 1 1 CL(uF) Under Shoot(V).4.3.2.1 VDD dependence of undershoot V IN =VDD, I OUT =1µA 3mA,CL=2µF 2 4 6 8 1 VDD(V) Under Shoot(V).4.3.2.1 Temperature dependence of undershoot V IN =V OUT (S)+1V,I OUT =1µA 3mA,CL=2µF.5-5 5 1 Ta( C) Seiko Instruments Inc. 19

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