DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre = 0.3 pf TYP. ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE SC957-T 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin (Emitter) face to perforation side of the tape. SC957-T 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin (Collector), Pin (Emitter) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: SC957) ABSOLUTE MAXIMUM RATINGS (TA = 5 C) Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO V Collector Current IC 30 ma Total Power Dissipation PT 80 mw Junction Temperature Tj 50 C Storage Temperature Tstg 65 to +50 C PACKAGE DIMENSIONS in millimeters.9 ±0. (.8) 0.85 0.95 +0.. 0. 0.8 0. 0.05 0.6 0.05 +0..8 0.3 +0..5 0. 0 to 0. 3 0. 0.05 (.9) 0. 0.05 PIN CONNECTIONS. Collector. Emitter 3. Base. Emitter 0.6 0.06 Caution; Electrostatic Sensitive Device. The information in this document is subject to change without notice. Document No. P379EJV0DS00 (nd edition) (Previous No. TD-08) Date Published July 995 P Printed in Japan 993
SC957 ELECTRICAL CHARACTERISTICS (TA = 5 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 0. µa VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0. µa VEB = V, IC = 0 DC Current Gain hfe 75 50 VCE = 3 V, IC = ma* Gain Bandwidth Product ft GHz VCE = 3 V, IC = ma Feed-back Capacitance Cre 0.3 pf VCB = 3 V, IE = 0, f = MHz* Insertion Power Gain Se 9 db VCE = 3 V, IC = ma, f =.0 GHz Noise Figure NF.5.5 db VCE = 3 V, IC = 3 ma, f =.0 GH * Pulse Measurement; PW 350 µs, Duty Cycle % Pulsed. * Measured with 3 terminals bridge, Emitter and Case should be grounded. hfe Classification Rank Marking T83 T83 hfe 75 to 50 TYPICAL CHARACTERISTICS (TA = 5 C) PT Total Power Dissipation mw 00 0 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 80 mw Free Air 50 0 30 0 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 0 50 0 50 TA Ambient Temperature C 0.0 VBE Base to Emitter Voltage V
SC957 60 50 0 30 0 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 µ A 00 µ A 300 µ A 00 µ A IB = 0 µ A hfe DC Current Gain 00 0 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V 5 V 0 3 5 6 VCE Collector to Emitter Voltage V 0 0. 0. 5 0 50 0 ft Gain Bandwidth Product GHz 8 6 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = GHz 5 V 3 V VCE = V 5 0 50 Se Insertion Power Gain db 8 6 f = GHz INSERTION POWER GAIN vs. COLLECTOR CURRENT 5 V 3 V VCE = V 5 0 50 NF Noise Figure db 3 0 NOISE FIGURE vs. COLLECTOR CURRENT f = GHz VCE = 3 V 5 0 50 Cre Feed-back Capacitance pf 0. 0.3 0. 0. FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = MHz 5 0 VCB Collector to Base Voltage V 3
SC957 S-PARAMETER (VCE = 3 V, IC = ma, ZO = 50 Ω) f S S S S 0.00.935.9 3.66 65.9.03 79.7.99 7.9 0.00.89 30.0 3.39 5..066 73..96 6. 0.600.830.6 3.69 37.9.096 6.6.96.6 0.800.759 58.8 3.090 5.8.9 53..870 9..000.677 7..89 3.5.38 5.6.83 35..00.597 88..690.0.5 0.6.76..00.5.0.59 9..6 33.9.706 6.0.600.67 9.3.37 8.0.7 3..66 50..800.8 3.6.90 73..77 7.0.69 55.3.000.39 5..05 6.9.77 3..58 60..00.38 68..909 56.5.80 9.8.550 6.5.00.38 75..793 9..89..53 68.5.600.379 63.6.68..8 9.6.8 73..800.08 5..57 36..89 8.3.8 78.0 3.000.3.5.8 3.5.8 8.0.5 8.7 (VCE = 3 V, IC = 3 ma, ZO = 50 Ω) f S S S S 0.00.83.5 8.90 56.5.03 79.6.955 3. 0.00.693 6.7 7.806 35.6.058 67..86.7 0.600.563 65.0 6.683 9..078 59..758 3.6 0.800.53 8.5 5.677 6.9.09 53.5.669 37.3.000.36 98.3.878 95.8.5 50..606 0.8.00.90 5.6.9 86.. 7.5.553 5..00.50 33.3 3.77 78.6.3 6.3.509 8..600.7 53.6 3.363 70.7. 3..7 5..800.06 7.5 3.053 63..9.5.38 55.7.000. 70.3.807 57..58 39.6.07 60.9.00.38 53..57 5.69 39..388 65.7.00.6..38 5.0.78 36.3.36 70..600.85 3.7.9 39.6.97 35..36 73..800.37..080 3.3.0 35..37 79.0 3.000.3 9.8.953 9.7.3 3.9.30 87.6
SC957 S-PARAMETER (VCE = 3 V, IC = 5 ma, ZO = 50 Ω) f S S S S 0.00.76 3.0.6 50.0.030 73.7.98 7.3 0.00.553 55.6.005 6.8.053 65..777 8.8 0.600. 7.5 8.00.6.067 60.3.659 3.0 0.800.35 9.6 6.5 99..08 56..577 38.0.000.3 9. 5.57 89..099 58..56.00.90 30..678 80.7.6 53.6.88.5.00.67 5..099 7..0 5.9.7 6.9.600.6 7. 3.68 67..33 9.3.0 5..800.6 67.5 3.87 6.6 8.0.389 55..000.93 9.8 3.008 5.9.57 6.3.35 59..00.0 37..78 8.6.69.9.3 63.9.00.5 8.7.55 3.7.85 39.6.35 69..600.67.3.366 38.6.0 0..9 7.6.800.3 6.7. 33.7. 37.0.70 76.9 3.000.330..079 9..8 35.6.60 88.5 (VCE = 3 V, IC = ma, ZO = 50 Ω) f S S S S 0.00.536. 7.753 39.3.0 66.6.80.7 0.00.39 68..387 5..0 67.9.65 3.7 0.600.3 88. 9.89 0.7.057 6.3.57 3. 0.800.65 7. 7.05 9.0.07 60.3.89 35.7.000. 30.9 5.93 8.8.090 6.7.5 37.5.00.6 63.8 5.000 75.3.3 6..3..00.6 73.3.35 69.7. 58..39 3..600.37 53. 3.8 63.5.38 5.9.367 7..800.9 37.7 3.63 57.5.5 5.6.338 5.0.000.8 9.3 3.68 5.5.70 5..39 55.9.00.6.9.876 6.7.8 8.0.98 63.7.00.9 7..676..9 6..8 67.7.600.70.3.86 37.3.08.9. 7.9.800.306 9..39 3.9. 39..36 76.7 3.000.38 5.5.83 8..38 36.7. 89.3 5
SC957 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M 9. 6