SILICON TRANSISTOR 2SC4227

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Transcription:

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4227 DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES Low Noise NF = 1.4 db TYP. @ f = 1 GHz,, IC = 7 ma High Gain S21e 2 = 12 db TYP. @ f = 1 GHz,, IC = 7 ma Small Mini Mold Package EIAJ: SC-7 ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC4227-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 2SC4227-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 2. ±.2.3 +.1.6.6.9 ±.1 PACKAGE DIMENSIONS in millimeters.3 2 1 2.1 ±.1 1.2 ±.1 to.1 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 3 +.1.3 Marking +.1.1. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be pcs. (Part No.: 2SC4227) Document No. P371EJ2VDS (2nd edition) (Previous No. TC-243) Date Published July 199 P Printed in Japan 1993

ABSOLUTE MAXIMUM RATINGS (TA = 2 C) Collector to Base Voltage VCBO 2 V Collector to Emitter Voltage VCEO V Emitter to Base Voltage VEBO 1. V Collector Current IC 6 ma Total Power Dissipation PT 1 mw Junction Temperature Tj 1 C Storage Temperature Tstg 6 to +1 C ELECTRICAL CHARACTERISTICS (TA = 2 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO.8 µa VCB = V, IE = Emitter Cutoff Current IEBO.8 µa VEB = 1 V, IC = DC Current Gain hfe 4 24, IC = 7 ma *1 Gain Bandwidth Product ft 4. 7. GHz, IC = 7 ma Feedback Capacitance Cre.4.9 pf, IE =, f = 1 MHz *2 Insertion Power Gain S21e 2 12 db, IC = 7 ma, f = 1 GHz Noise Figure NF 1.4 2.7 db, IC = 7 ma, f = 1 GHz *1 Pulse Measurement ; PW 3 µs, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hfe Classification Rank R33 R34 R3 Marking R33 R34 R3 hfe 4 to 9 7 to 1 1 to 24 2

TYPICAL CHARACTERISTICS (TA = 2 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE PT Total Power Dissipation mw 2 2 1 16 µ A 14 µ A 12 µ A µ A 8 µ A 6 µ A 4 µ A IB = 2 µ A 1. 1. TA Ambient Temperature C VCE Collector to Emitter Voltage V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 2 2 hfe DC Current Gain 2. 1. VBE Base to Emitter Voltage V. 1 Cre Feed-back Capacitance pf. 2. 1...2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz.1 1. 2 2 VCB Collector to Base Voltage V ft Gain Bandwidth Product GHz 8 6 4 2 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = 1 GHz 1.. 3

INSERTION POWER GAIN vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY S21e 2 Insertion Power Gain db 1 f = 1 GHz S21e 2 Insertion Power Gain db 2 2 1 IC = 7 ma. 1.1.2. 1. 2.. f Frequency GHz NOISE FIGURE vs. COLLECTOR CURRENT NF Noise Figure db 4 3 2 1 f = 1 GHz. 1.. 4

S-PARAMETER (, IC = 7 ma, ZO = Ω) FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG..84 23.8 11.631 14.8.23 74.8.92 16. 2..692 48.6.839 137..4 64.1.791 27.7 3..81 7.3 9.722 123.8. 9.9.67 33. 4..489 89. 8.19 112.9.6 6.7.97 37...419 4.9 7.434 4.1.67.9.38 38.7 6..376 117.1 6.468 97..7.6.497 4. 7..342 128.6.729 91.8.82.7.467 41. 8..321 138.4.11 86.7.89 6.3.443 41.7 9..3 147.3 4.63 82..96 6.1.427 42...296 1.2 4.27 78..4 6.4.412 43.6 1..289 162.2 3.879 74.8.111 6..41 44.6 12..284 169.3 3.9 71.4.119 6.4.393 4.8 13..282 17.3 3.349 68.1.127 6.2.384 47.3 14..281 179. 3.133 64.8.136 6..379 48.8 1..283 173.8 2.94 61.9.143.4.372.1 16..283 168.6 2.78 8.8.11..367 1.8 17..28 163.8 2.631 6.2.16 4.4.363 3.7 18..286 19.9 2.14 3.3.168 3.9.39.4 19..289 1.4 2.39..177 3.3.34 7.3 2..293 11.8 2.293 47.8.186 2..31 9.2 (, IC = ma, ZO = Ω) FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG..818 29.4 14.8 16.2.23 79.9.932 14.4 2..689 4.3 12.12 137..4 6.1.824 23.4 3..94 73.1.142 124.6.2..716 3.3 4.. 89.8 8.34 114.4.63 8..62 32.2..47 2.8 7.3 7..69 6.4.77 34.2 6..44 11. 6.211 1..81 4.9.2 3.1 7..377 124.4.496 96.8.84 9..11 36.1 8..39 134.3 4.98 91.4.91 8.4.471 36.2 9..342 141. 4.4 88.1.97 8.4.48 3.3..33 1.3 4.18 84.7. 61.2.44 36. 1..326 1.9 3.7 81.4.112 61.8.442 36.8 12..321 162.4 3.4 78.1.11 61.4.417 37.8 13..317 167.2 3.181 7.6.124 62.3.412 38. 14..321 173.4 2.99 72..131 63.9.411 39.9 1..318 177. 2.82 69.8.138 63.6.47 4.4 16..32 176.6 2.66 67.3.149 66.4.4 41.1 17..323 173.2 2.33 66.1.16 6.3.394 43.7 18..326 167.8 2.369 63..162 6.9.394 44.3 19..331 16.6 2.27 61..177 6.4.39 4. 2..333 161.4 2.196 9.2.183 64..384 47.6

S-PARAMETER (, IC = 3 ma, ZO = Ω) FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG..96 22.7 9.7 161.6.26 82..962.6 2..8 43.7 8.41 14.3.49 63.8.89 18.3 3..742 6.6 7.69 133.4.62 8.7.811 2.8 4..638 76.6 6.8 122.4.73 6..732 27.7..87 89.8.934 114.1.82 3.4.68 31.2 6..24 2.2.148 7.1.91 49.7.624 33. 7..49 111.4 4.627 2.2.94 1.8.63 34.4 8..46 121.4 4.181 96..99 1.2.68 3. 9..43 129.9 3.827 92.6.1 2.9.4 3.7..427 138.2 3.443 88.1.7.9.23 36.7 1..44 144.9 3.199 84.2.11 3.7.12 36.8 12..399 11.7 2.989 79.8.113 6.6. 38.6 13..392 17.9 2.779 77.4.121 4.9.489 39.2 14..392 163.6 2.638 73..126 6.4.483 4.4 1..386 169.1 2.443 71.3.13 6.4.477 41.8 16..38 174. 2.344 68..137 6..477 42.4 17..382 179.7 2.239 6.3.143 9..466 44.4 18..389 176.1 2.113 63..11 9.4.461 44.9 19..383 172. 2.2 61.4.14 62.6.46 46.9 2..387 168.3 1.922 8.2.163 62..464 48.3 (, IC = 7 ma, ZO = Ω) FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG. 1.9 14. 3.44 168.8.27 78.6.994.6 2..9 29.7 3.39 16.3. 73.6.969.1 3..937 42.6 3.277 147.1.73 63.4.947 1.9 4..864 6.2 3.34 136.6.91 7.7.898 18.8..838 67.3 2.891 128.6.7 1.1.86 22.1 6..77 79.3 2.674 12..116 46.6.824 2.8 7..74 88. 2.48 114.2.12 4.2.83 27. 8..78 99.1 2.338 6.8.127 41.2.776 29.7 9..67 7.9 2.177 1.4.132 4.2.74 31...649 116.8 2.2 96..13 37.2.723 33.7 1..621 124. 1.914 9.8.131 36.6.719 34.2 12..68 131.8 1.819 86..129 3.4.7 36.3 13..87 138. 1.713 82.4.13 3.2.691 37.6 14..87 144. 1.628 77.7.128 36.1.681 39.2 1..73 12.6 1.33 73.4.127 36..662 4.7 16..9 17.1 1.464 7.3.124 37..66 42.7 17..62 164.2 1.421 67.2.12 39.1.68 44. 18..7 168.9 1.3 64.7.122 43.3.68 46. 19..7 173.9 1.296 61.1.122 4.2.641 47.8 2..1 178.6 1.24 8..124 48..643.1 6

[MEMO] 7

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8