DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK26 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES Suitable for use as RF amplifier in UHF TV tuner. Low Crss:.2 pf TYP. High GPS: 2 db TYP. Low NF: 1.1 db TYP. PACKAGE DIMENSIONS in millimeters.4 +.1. 2.8 +.2.3 1. +.2.1.4 +.1. ABSOLUTE MAXIMUM RATINGS (TA = 2 C) Drain to Source Voltage VDSX 1 V Gate1 to Source Voltage VG1S 4. V Gate2 to Source Voltage VG2S 4. V Drain Current ID 8 ma Total Power Dissipation PT 2 mw Channel Temperature Tch 12 C Storage Temperature Tstg to +12 C 2.9±.2 (1.9).9.9 1.1 +.2 3.1.6 +.1. 2 3.8 1 4 to.1.4 +.1. (1.9).16 +.1.6 ELECTRICAL CHARACTERISTICS (TA = 2 C) 1. Source 2. Drain 3. Gate 2 4. Gate 1 CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source Breakdown BVDSX 1 V VG1S = 4 V, VG2S =, ID = 2 µa Voltage Drain Current IDSS 1 8 ma, VG1S =, VG2S = Gate1 to Source Cutoff Voltage VG1S(off) 3. V, VG2S =, ID = 1 µa Gate2 to Source Cutoff Voltage VG2S(off) 3. V, VG1S =, ID = 1 µa Gate1 Reverse Current IG1SS 1 µa VDS =, VG1S = 4 V, VG2S = Gate2 Reverse Current IG2SS 1 µa VDS =, VG2S = 4 V, VG1S = Forward Transfer Admittance yfs 2 3 ms,, ID = 1 ma, f = 1. khz Input Capacitance Ciss 1. 1. 2. pf,, ID = 1 ma, Reverse Transfer Capacitance Crss.2.3 pf f = 1. MHz Power Gain GPS 16. 2. db,, ID = 1 ma, Noise Figure NF 1.1 2. db f = 9 MHz IDSS Classification (Unit: ma) Class U76 U77 U78 U79 Marking U76 U77 U78 U79 IDSS 1 to 2 2 to 3 3 to 4 to 8 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P168EJ2VDS (2nd edition) (Previous No. TC-2134) Date Published August 199 P Printed in Japan 199 1987
3SK26 TYPICAL CHARACTERISTICS (TA = 2 C) PT Total Power Dissipation mw yfs Forward Transfer Admittance ms 4 3 2 1 8 4 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air 2 7 1 12 TA Ambient Temperature C FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VG1S = 1 V. V f = 1 khz. V 1.8 1.2.6 +.6 +1.2 VG1S Gate 1 to Source Voltage V NF Noise Figure db 1 NF Noise Figure db 1 GPS Power Gain db GPS Power Gain db 3 1 1 3 2 1 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE at GPS ID = 1 ma f = 9 MHZ POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE NF GPS NF 4 3. 2. 1. +1. +2. VG2S Gate 2 to Source Voltage V ID = 1 ma f = 9 MHz 1 VDS Drain to Source Voltage V Ciss Input Capacitance pf 2. 1. INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE f = 1 MHz at ID = 1 ma at ID = ma NF Noise Figure db 1 GPS Power Gain db 2 2 1 1 POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT f = 9 MHz NF GPS 1. +1. VG2S Gate 2 to Source Voltage V ID Drain Current ma 1 2
3SK26 1 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 8 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT f = 1 khz ID Drain Current ma. V. V 1. V yfs Forward Transfer Admittance ms 4. V 1.8 1.2.6 +.6 +1.2 VG1S Gate 1 to Source Voltage V. V 1 ID Drain Current ma S-PARAMETER (,, ID = 1 ma) FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 1. 1.3 4.9 3.938 17..4 41.9.963 1. 2..984 11.9 4.9 164.1.1 173..98 4.2 3..98 14.9 3.89 18..6 71.7.972 4.8 4..964 21.8 3.766 11.3. 93.9.972 8.2..928 24.6 3.699 149.1. 74..96 8.6 6..928 31.9 3.886 138.8.8 84.2.983 13.1 7..869 33. 3.612 132.3.3 6.8.961 12.1 8..889 39.8 3.643 126.1.4 98..99 16.2 9..832 42.9 3.3 121..4 12.4.981 17. 1..847 47.1 3.817 11.2.3 173.4 1.39 2.8 11..79 49.8 3.681 16.1.1 1.7.999 22.3 12..833 1.4 3.747 1.4.21 147.3 1.17 2.1 3
3SK26 9 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 pf 47 kω 1 pf to 1 pf INPUT Ω to 1 pf to 1 pf to 1 pf L2 OUTPUT Ω L1 47 kω RFC 1 pf 1 pf L1, L2: 3.2 mm VG1S VDD ( V),, ID = 1 ma 4
3SK26 [MEMO]
3SK26 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2