MOS FIELD EFFECT TRANSISTOR 2SK3577

Similar documents
MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR 2SK3663

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR 2SK3058

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET SWITCHING P-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR 2SK3304

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR 2SK3664

MOS FIELD EFFECT TRANSISTOR

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Old Company Name in Catalogs and Other Documents

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR µ PA2700GR

DATA SHEET SWITCHING N-CHANNEL MOS FET

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR

DATA SHEET SWITCHING N- AND P-CHANNEL POWER MOS FET. Gate. Protection Diode

MOS FIELD EFFECT POWER TRANSISTORS

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT POWER TRANSISTORS 2SJ495

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z

2SK2483 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION FEATURES

DATA SHEET SWITCHING N-CHANNEL MOS FET 2.0± ±0.1

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR 2SK3377

Old Company Name in Catalogs and Other Documents

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

2SK2141 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS FEATURES

DATA SHEET SWITCHING N-CHANNEL POWER MOSFET

MOS FIELD EFFECT TRANSISTOR 2SJ353

Old Company Name in Catalogs and Other Documents

MOS FIELD EFFECT TRANSISTOR

2SK2369/2SK2370 MOS FIELD EFFECT TRANSISTORS DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 查询 K2370 供应商 DESCRIPTION FEATURES

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET. The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.

MOS FIELD EFFECT TRANSISTOR 2SK2159

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

MOS FIELD EFFECT TRANSISTOR 2SJ462

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

JUNCTION FIELD EFFECT TRANSISTOR 2SK660

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

JUNCTION FIELD EFFECT TRANSISTOR 2SK2552

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents

DATA SHEET SWITCHING P-CHANNEL POWER MOS FET

Old Company Name in Catalogs and Other Documents

MOS FIELD EFFECT TRANSISTOR 2SJ205

DATA SHEET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

MOS FIELD EFFECT TRANSISTOR 3SK206

MOS FIELD EFFECT TRANSISTOR NP110N04PDG

MOS FIELD EFFECT TRANSISTOR 3SK252

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

SILICON POWER TRANSISTOR 2SC3632-Z

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 4.0 A

MOS FIELD EFFECT TRANSISTOR 3SK230

MOS FIELD EFFECT TRANSISTOR 3SK223

DATA SHEET NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 15 A

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING ±8.

2SA1743 SILICON POWER TRANSISTOR DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING. PACKAGE DRAWING (UNIT: mm) FEATURES

DATA SHEET. on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

MOS FIELD EFFECT TRANSISTOR

MTM761110LBF MTM761110LBF. Silicon P-channel MOSFET. for Switching. Internal Connection. Pin name

Old Company Name in Catalogs and Other Documents

DATA SHEET NPN SILICON POWER TRANSISTOR. 55 to +150 C 150 C Maximum

FK6K0335ZL Resistors, Zener Diode installed N-channel MOS FET

3 000 pcs / reel (standard) ± to Tch Tstg Rth(ch-a)

2.5V Drive Pch MOS FET

4V Drive Pch+Pch MOSFET

FA6K3342ZL Zener Diode installed separate type dual P-channel MOS FET

1.2V Drive Pch MOSFET

MTM232232LBF Silicon N-channel MOSFET

1.2V Drive Nch MOSFET

MTM232270LBF Silicon N-channel MOSFET

1.5V Drive Nch+Pch MOSFET

DATA SHEET. 6, 8-PIN DIP, 200 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET

FC8J33040L FC8J33040L. Dual N-channel MOSFET. Doc No. TT4-EA Revision. 2. For switching For DC-DC Converter. Internal Connection.

Switching ( 30V, 5.0A)

4V Drive Nch MOS FET RSS085N05 RSS085N05. Transistor 1/4. Structure Silicon N-channel MOS FET. External dimensions (Unit : mm)

2SK4124. SANYO Semiconductors DATA SHEET 2SK4124. Features. Specifications. N-Channel Silicon MOSFET General-Purpose Switching Device Applications

BBS3002. P-Channel Power MOSFET 60V, 100A, 5.8mΩ, TO-263-2L/TO-263. Features. Specifications TO-263

3LP01S. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SMCP. Features. Specifications. Low ON-resistance Ultrahigh-speed switching 2.

2SK4177. N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L. Features. Specifications. ON-resistance RDS(on)=10Ω(typ.) 10V drive

SC L Asymmetric Dual Silicon N-ch Power MOS FET

FK6K02010L FK6K02010L. Silicon N-channel MOS FET. Doc No. TT4-EA Revision. 2. For switching. Internal Connection. Pin Name

2.5V Drive Pch MOS FET

2.5V Drive Pch MOS FET

MTM861280LBF MTM861280LBF. Silicon P-channel MOSFET. Doc No. TT4-EA Revision. 2. For Switching. Internal Connection.

SMP3003. P-Channel Power MOSFET 75V, 100A, 8.0mΩ, TO-263-2L/TO-263. Features. Specifications TO-263

2.5V Drive Pch+Pch MOSFET

Transcription:

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3577 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES 2.5 V drive available Low on-state resistance RDS(on) = 63 mω MAX. (VGS = 4.5 V, ID = 2. A) RDS(on)2 = 65 mω MAX. (VGS = 4. V, ID = 2. A) RDS(on)3 = 9 mω MAX. (VGS = 2.5 V, ID = 2. A) 2.8 ±.2.65 +..5.5 PACKAGE DRAWING (Unit: mm).95 3 2.9 2.9 ±.2.4 +..5.95.65.9 to..6 +..6 to. ORDERING INFORMATION PART NUMBER 2SK3577 PACKAGE SC-96 (Mini Mold Thin Type) : Gate 2 : Source 3 : Drain Marking: XL ABSOLUTE MAXIMUM RATINGS (TA = ) Drain to Source Voltage (VGS = V) VDSS 3 V Gate to Source Voltage (VDS = V) VGSS ±2 V Drain Current (DC) (TA = ) ID(DC) ±3.5 A Drain Current (pulse) Note ID(pulse) ±4 A Total Power Dissipation (TA = ) PT.2 W Total Power Dissipation (TA = ) Note2 PT2.25 W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C EQUIVALENT CIRCUIT Gate Gate Protection Diode Drain Source Body Diode Notes. PW µs, Duty Cycle % 2. Mounted on FR-4 board, t 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D5938EJVDS (st edition) May 22 NS CP(K) 2

ELECTRICAL CHARACTERISTICS (TA = ) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 3 V, VGS = V µa Gate Leakage Current IGSS VGS = ±2 V, VDS = V ± µa Gate Cut-off Voltage VGS(off) VDS = V, ID =. ma.5..5 V Forward Transfer Admittance yfs VDS = V, ID = 2. A. 4.9 S Drain to Source On-state Resistance RDS(on) VGS = 4.5 V, ID = 2. A 5 63 mω RDS(on)2 VGS = 4. V, ID = 2. A 52 65 mω RDS(on)3 VGS = 2.5 V, ID = 2. A 68 9 mω Input Capacitance Ciss VDS = V 26 pf Output Capacitance Coss VGS = V 6 pf Reverse Transfer Capacitance Crss f =. MHz 35 pf Turn-on Delay Time td(on) VDD = V, ID = 2. A 28 ns Rise Time tr VGS = 4. V 2 ns Turn-off Delay Time td(off) RG = Ω 8 ns Fall Time tf 2 ns Total Gate Charge QG VDD = 24 V 3. nc Gate to Source Charge QGS VGS = 4. V.8 nc Gate to Drain Charge QGD ID = 3.5 A.2 nc Body Diode Forward Voltage VF(S-D) IF = 3.5 A, VGS = V.89 V TEST CIRCUIT SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE PG. RG D.U.T. RL VDD VGS Wave Form VGS % VGS 9% PG. D.U.T. IG = 2 ma 5 Ω RL VDD VGS τ VDS Wave Form VDS VDS 9% % % td(on) tr td(off) tf 9% τ = µ s Duty Cycle % ton toff 2 Data Sheet D5938EJVDS

TYPICAL CHARACTERISTICS (TA = ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2.5 dt - Percentage of Rated Power - % 8 6 4 2 PT - Total Power Dissipation - W.25.75.5.25 25 5 75 25 5 75 25 5 75 25 5 75 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA RDS(on) Limited (VGS = 4.5 V) ID(DC) ID(pulse) PW = ms ms. ms Single Pulse 5 s Mounted on FR-4 board of 5 mm 5 mm.6 mm.. VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-a) - Transient Thermal Resistance - C/W Single Pulse Without board Mounted on FR-4 board of 5 mm 5 mm.6 mm m m m PW - Pulse Width - s Data Sheet D5938EJVDS 3

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 5 5 VGS = 4.5 V 2.5 V 4. V... VDS = V TA =..2.4.6.8 VDS - Drain to Source Voltage - V. 2 3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) Gate Cut-off Voltage - V.5 VDS = V ID =. ma yfs - Forward Transfer Admittance - S. VDS = V TA =.5. -5 5 5.. Tch - Channel Temperature - C 9 8 7 6 5 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 2. A 4. V VGS = 2.5 V 4.5 V 3-5 5 5 9 8 7 6 5 4 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 2. A 2 2 4 6 8 2 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V 4 Data Sheet D5938EJVDS

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 9 8 7 6 5 4 VGS = 2.5V TA = 3.. 9 8 7 6 5 4 VGS = 4. V TA = 3.. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 9 8 7 6 5 4 VGS = 4.5 V TA = 3.. Ciss, Coss, Crss - Capacitance - pf VGS = V f = MHz Ciss Coss Crss. VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns tr VDD = V VGS = 4. V RG = Ω tf td(off) td(on) ISD - Diode Forward Current - A. VGS = V...4.6.8.2.4 VSD - Source to Drain Voltage - V Data Sheet D5938EJVDS 5

6 DYNAMIC INPUT/OUTPUT CHARACTERISTICS ID = 3.5 A VGS - Gate to Drain Voltage - A 5 4 3 2 VDD = 24 V 5 V 6 V 2 3 4 QG - Gate Charge - nc 6 Data Sheet D5938EJVDS

[MEMO] Data Sheet D5938EJVDS 7

The information in this document is current as of May, 22. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) () "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E. 4