UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES TO-220F TO-220F2 * R DS(ON) <.75Ω @ = 0V, I D = 3A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL TO-263 TO-25 TO-252 ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 Packing 6N60L-TA3-T 6N60G-TA3-T TO-220 G D S Tube 6N60L-TF-T 6N60G-TF-T TO-220F G D S Tube 6N60L-TF2-T 6N60G-TF2-T TO-220F2 G D S Tube 6N60L-TF3-T 6N60G-TF3-T TO-220F G D S Tube 6N60L-TM3-T 6N60G-TM3-T TO-25 G D S Tube 6N60L-TN3-R 6N60G-TN3-R TO-252 G D S Tape Reel 6N60L-TQ2-T 6N60G-TQ2-T TO-263 G D S Tube 6N60L-TQ2-R 6N60G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source of 7 Copyright 205 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 600 V Gate-Source Voltage S ±30 V Avalanche Current (Note 2) I AR 6 A Continuous Drain Current I D 6 A Pulsed Drain Current (Note 2) I DM 24 A Avalanche Energy Single Pulsed (Note 3) E AS 260 mj Repetitive (Note 2) E AR 3 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 ns TO-220/TO-263 25 W Power Dissipation TO-220F/TO-220F 40 W P D TO-220F2 42 W TO-25/TO-252 55 W Junction Temperature T J +50 C Operating Temperature T OPR -55 ~ +50 C Storage Temperature T STG -55 ~ +50 C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by T J 3. L = 4mH, I AS = 6A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 4. I SD 6A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220/TO-220F2 Junction to Ambient TO-220F/TO-220F 62.5 θ JA TO-263 C/W TO-25/TO-252 0 TO-220/TO-263.0 Junction to Case TO-220F/TO-220F 3.2 θ JC TO-220F2 2.97 C/W TO-25/TO-252 2.27 UNISONIC TECHNOLOGIES CO., LTD 3 of 7
ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS = 0V, I D = 250μA 600 V Drain-Source Leakage Current I DSS V DS = 600V, = 0V 0 μa Gate- Source Leakage Current Forward = 30V, V DS = 0V 00 na I GSS Reverse = -30V, V DS = 0V -00 na Breakdown Voltage Temperature Coefficient BV DSS / T J I D =250μA, Referenced to 25 C 0.53 V/ C ON CHARACTERISTICS Gate Threshold Voltage (TH) V DS =, I D = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) = 0V, I D = 3A.2.75 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 75 pf Output Capacitance C OSS V DS =25V, =0V, f=.0 MHz 89 pf Reverse Transfer Capacitance C RSS 7 pf SWITCHING CHARACTERISTICS Total Gate Charge Q G 25 nc V DS =50V, I D =.3A, =0 V Gate-Source Charge Q GS 4.9 nc (Note, 2) Gate-Drain Charge Q GD 9.4 nc Turn-On Delay Time t D(ON) 60 ns Turn-On Rise Time t R V DD =30V, I D =0.5A, R G =25Ω 80 ns Turn-Off Delay Time t D(OFF) I G = 00μA (Note, 2) 230 ns Turn-Off Fall Time t F 90 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD = 0 V, I S = 6 A.4 V Maximum Continuous Drain-Source Diode Forward Current I S 6 A Maximum Pulsed Drain-Source Diode Forward Current I SM 24 A Reverse Recovery Time t rr = 0 V, I S = 6 A, 290 ns Reverse Recovery Charge Q RR di F /dt = 00 A/μs (Note ) 3.0 μc Notes:. Pulse Test: Pulse width 300μs, Duty cycle 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 4 of 7
TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS + - - L R G Driver V DD Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit (Driver) P.W. Period D= P. W. Period = 0V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 7
TEST CIRCUITS AND WAVEFORMS (Cont.) V DS 90% 0% t D(ON) t R t D(OFF) t F Switching Test Circuit Switching Waveforms 0V Q G Q GS Q GD Charge Gate Charge Test Circuit Gate Charge Waveform BV DSS I AS V DD I D(t) V DS(t) t p Time Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 7
TYPICAL CHARACTERISTICS Drain Current,ID (µa) Drain Current,ID (µa) Drain Current,ID (A) Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7