UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

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Transcription:

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UF5305 is suitable for all commercial-industrial applications, etc. FEATURES * R DS(ON) <0.06Ω @ V GS =-10V, I D =-16A * High Switching Speed * Dynamic dv/dt Rating SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing UF5305L-TA3-T UF5305G-TA3-T TO-220 G D S Tube UF5305L-TN3-T UF5305G-TN3-T TO-252 G D S Tube UF5305L-TN3-R UF5305G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 6 Copyright 2013 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -55 V Gate-Source Voltage V GSS ±20 V Drain Current V GS =-10V, T C =25 C -31 A Continuous I D V GS =-10V, T C =100 C -22 A Pulsed (Note 2) I DM -110 A Avalanche Current (Note 2) I AR -16 A Avalanche Energy Single Pulse (Note 3) E AS 280 mj Repetitive (Note 2) E AR 11 mj Peak Diode Recovery dv/dt (Note 4) dv/dt -5.0 V/ns Power Dissipation (T C =25 C) P D 110 W Linear Derating Factor 0.71 W/ C Junction Temperature T J -55~+150 C Storage Temperature Range T STG -55~+150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. V DD =-25V, Starting T J =25 C, L=2.1mH, R G =25Ω, I AS =-16A. 4. I SD -16A, di/dt -280A/µs, V DD BV DSS, T J 150 C THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62 C/W Junction to Case θ JC 1.4 C/W UNISONIC TECHNOLOGIES CO., LTD 2 of 6

ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =-250µA -55 V Breakdown Voltage Temperature Coefficient BV DSS / T J Reference to 25 C, I D =-1mA -0.034 V/ C Drain-Source Leakage Current I DSS V DS =-55V, V GS =0V -25 µa V DS =-44V, V GS =0V, T J =150 C -250 µa Gate-Source Leakage Current Forward V GS =20V, V DS =0V 100 na I GSS Reverse V GS =-20V, V DS =0V -100 na ON CHARACTERISTICS Static Drain-Source On-Resistance R DS(ON) V GS =-10V, I D =-16A (Note 2) 0.06 Ω Gate Threshold Voltage V GS(TH) V DS =V GS, I D =-250µA -2.0-4.0 V DYNAMIC PARAMETERS Input Capacitance C ISS 1200 pf Output Capacitance C OSS V GS =0V, V DS =-25V, f=1.0mhz 520 pf Reverse Transfer Capacitance C RSS 250 pf SWITCHING PARAMETERS Total Gate Charge Q G 63 nc I D =-16A, V DS =-44V, V GS =-10V Gate-to-Source Charge Q GS 13 nc (Note 2) Gate-to-Drain ("Miller") Charge Q GD 29 nc Turn-ON Delay Time t D(ON) 14 ns Rise Time t R V DD =-28V, I D =-16A, R G =6.8Ω 66 ns Turn-OFF Delay Time t D(OFF) R D =1.6Ω (Note 2) 39 ns Fall Time t F 63 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body Diode Continuous Source Current I S -31 A Maximum Body-Diode Pulsed Current (Note 1) I SM -110 A Drain-Source Diode Forward Voltage V SD T J =25 C, I S =-16A, V GS =0V (Note 2) -1.4 V Body Diode Reverse Recovery Time t RR T J =25 C, I F =-16A, 71 110 ns Body Diode Reverse Recovery Charge Q RR di/dt=-100a/µs (Note 2) 170 250 nc Note: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. Pulse width 300µs; duty cycle 2%. UNISONIC TECHNOLOGIES CO., LTD 3 of 6

TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD 4 of 6

TEST CIRCUITS AND WAVEFORMS(Cont.) DUT + R G V DS - L I SD V GS V DD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period V GS (Driver) Gate Pulse Width D= Gate Pulse Period 10V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current V DS (DUT) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 6

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 6 of 6