MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM Power-Transistor,3V DataSheet Rev.2. Final PowerManagement&Multimarket
1Description Features N-channel,normallevel FastDiodewithreducedQrr Optimizedforhardcommutationruggedness Verylowon-resistanceRDS(on) 175 Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication Halogen-freeaccordingtoIEC61249-2-21 TO-22-3 tab Table1KeyPerformanceParameters Parameter Value Unit VDS 3 V RDS(on),max 41 mω ID 44 A Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks PG-TO22-3 41N3N - 1) J-STD2 and JESD22 2
TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Package Outlines....................................................................... 11 Revision History........................................................................ 12 Disclaimer............................................................................ 12 3
2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ID - - - - 44 34 A TC=25 C TC=1 C Pulsed drain current 1) ID,pulse - - 176 A TC=25 C Avalanche energy, single pulse EAS - - 24 mj ID=22A,RGS=5Ω Reversediodepeakdv/dt dv/dt - - 6 kv/µs ID=44A,VDS=15V, di/dt=1a/µs,tj,max=175 C Gate source voltage VGS -2-2 V - Diode hard commutation breakdown current 2) Ptot - - 3 W TC=25 C Operating and storage temperature Tj,Tstg -55-175 C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction - case 3) RthJC -.3.5 K/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 62 K/W - Thermal resistance, junction - ambient, 6 cm 2 cooling area 4) RthJA - - 4 K/W - 1) See figure 3 2) Diode pulse current is defined by thermal and/or package limits 3) Defined by design. Not subject to production test. 4) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 4
4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 3 - - V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=27µA Zero gate voltage drain current IDSS - - 1 1 1 3 µa VDS=24V,VGS=V,Tj=25 C VDS=24V,VGS=V,Tj=125 C Gate-source leakage current IGSS - 1 1 na VGS=2V,VDS=V Drain-source on-state resistance RDS(on) - 36 41 mω VGS=1V,ID=44A Gate resistance 1) RG - 2.4 3.6 Ω - Transconductance gfs 52 13 - S VDS >2 ID RDS(on)max,ID=44A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss - 54 718 pf VGS=V,VDS=1V,f=1MHz Output capacitance 1) Coss - 281 374 pf VGS=V,VDS=1V,f=1MHz Reverse transfer capacitance 1) Crss - 6 13 pf VGS=V,VDS=1V,f=1MHz Turn-on delay time td(on) - 16 - ns Rise time tr - 9 - ns Turn-off delay time td(off) - 43 - ns Fall time tf - 9 - ns VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω VDD=1V,VGS=1V,ID=22A, RG,ext=1.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs - 24 - nc VDD=1V,ID=44A,VGS=to1V Gate to drain charge Qgd - 7 - nc VDD=1V,ID=44A,VGS=to1V Switching charge Qsw - 15 - nc VDD=1V,ID=44A,VGS=to1V Gate charge total 1) Qg - 65 87 nc VDD=1V,ID=44A,VGS=to1V Gate plateau voltage Vplateau - 4.4 - V VDD=1V,ID=44A,VGS=to1V Output charge Qoss - 131 - nc VDD=1V,VGS=V 1) Defined by design. Not subject to production test. 2) See Gate charge waveforms for parameter definition 5
Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continous forward current IS - - 44 A TC=25 C Diode pulse current 1) IS,pulse - - 176 A TC=25 C Diode hard commutation current 2) IS,hard - - 44 A TC=25 C,diF/dt=1A/µs Diode forward voltage VSD -.9 1.2 V VGS=V,IF=44A,Tj=25 C Reverse recovery time 3) trr - 152 34 ns VR=1V,IF=32.2A,diF/dt=1A/µs Reverse recovery charge 3) Qrr - 844 1689 nc VR=1V,IF=32.2A,diF/dt=1A/µs 1) Diode pulse current is defined by thermal and/or package limits 2) Maximum allowed hard-commutated current through diode at di/dt=1 A/µs 3) Defined by design. Not subject to production test. 6
5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 32 Diagram2:Draincurrent 5 28 24 4 2 3 Ptot[W] 16 ID[A] 12 2 8 1 4 5 1 15 2 TC[ C] Ptot=f(TC) 5 1 15 2 TC[ C] ID=f(TC);VGS>=1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 µs 1 2 1 µs.5 ID[A] 1 1 1 ms 1 µs ZthJC[K/W] 1-1.2.1 1 DC 1 ms.5.2.1 1-1 1-1 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1-2 single pulse 1-5 1-4 1-3 1-2 1-1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 7
Diagram5:Typ.outputcharacteristics 125 Diagram6:Typ.drain-sourceonresistance 5 45 1 8 V 1 V 4 35 6 V 8 V 1 V ID[A] 75 5 5 V RDS(on)[mΩ] 3 25 2 15 25 1 5 1 2 3 4 5 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 2 4 6 8 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 8 Diagram8:Typ.forwardtransconductance 14 12 6 1 8 ID[A] 4 gfs[s] 6 2 175 C 4 25 C 2 4 6 8 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 2 2 4 6 8 ID[A] gfs=f(id);tj=25 C 8
Diagram9:Drain-sourceon-stateresistance 12 Diagram1:Typ.gatethresholdvoltage 4. 1 3.5 3. 27 µa 8 2.5 27 µa RDS(on)[mΩ] 6 4 98% typ VGS(th)[V] 2. 1.5 1. 2.5-6 -2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=44A;VGS=1V. -6-2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss Coss 1 3 25 C 175 C 25 C, 98% 175 C, 98% 1 3 1 2 C[pF] 1 2 IF[A] Crss 1 1 1 1 1 4 8 12 16 2 24 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 9
Diagram13:Avalanchecharacteristics 1 2 Diagram14:Typ.gatecharge 1 8 24 V IAS[A] 1 1 125 C 1 C 25 C VGS[V] 6 4 6 V 15 V 2 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 2 4 6 8 Qgate[nC] VGS=f(Qgate);ID=44Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage 34 Gate charge waveforms 33 32 VBR(DSS)[V] 31 3 29 28-6 -2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1
OptiMOSTM Power-Transistor, 3 V 6 Package Outlines Figure 1 Outline PG-TO22-3, dimensions in mm/inches 11 Rev. 2., 214-12-27
OptiMOSTM Power-Transistor, 3 V Revision History Revision: 214-12-27, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 214-12-27 Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 214 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2., 214-12-27