Electrical, Electronic and Digital Principles (EEDP) Lecture 3. Other BJT Biasing Techniques باسم ممدوح الحلوانى

Similar documents
Electrical, Electronic and Digital Principles (EEDP) Lecture 3. Other BJT Biasing Techniques باسم ممدوح الحلوانى

By: Dr. Ahmed ElShafee

Electrical, Electronic and Digital Principles (EEDP) Lecture 5. CE Amplifier, Coupling, and Multistage Amplifiers باسم ممدوح الحلوانى

Electronic Circuits II Laboratory 01 Voltage Divider Bias

Chapter 5 Transistor Bias Circuits

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

I C I E =I B = I C 1 V BE 0.7 V

Lecture 9. Bipolar Junction Transistor (BJT) BJT 1-1

Chapter 4 DC Biasing BJTs. BJTs

Lecture 14. Bipolar Junction Transistor (BJT) BJT 1-1

Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes

Transistor Configuration

Bipolar Junction Transistors

Lecture (04) BJT Amplifiers 1

Electronic Circuits - Tutorial 07 BJT transistor 1

The Common Emitter Amplifier Circuit

Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular

UNIT I - TRANSISTOR BIAS STABILITY

ECE 3274 Common-Emitter Amplifier Project

This transistor circuit has a voltage divider circuit with an emitter resistor for bias stability.

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

การไบอ สทรานซ สเตอร. Transistors Biasing

Chapter Three " BJT Small-Signal Analysis "

REVIEW TRANSISTOR BIAS CIRCUIT

Lab 4. Transistor as an amplifier, part 2

ET215 Devices I Unit 4A

Part ILectures Bipolar Junction Transistors(BJTs) and Circuits

Electronic Devices, 9th edition Thomas L. Floyd. Input signal. R 1 and R 2 are selected to establish V B. If the V CE

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect

Biasing. Biasing: The DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.

.dc Vcc Ib 0 50uA 5uA

EXPERIMENT #3 TRANSISTOR BIASING

Lecture (09) Bipolar Junction Transistor 3

Electronics II Lecture 2(a): Bipolar Junction Transistors

EEE118: Electronic Devices and Circuits

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT

Lecture (06) Bipolar Junction Transistor

TRANSISTOR BIASING AND STABILIZATION

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018

The BJT Transistor Theory

DC Bias. Graphical Analysis. Script

EXPERIMENT 10: Power Amplifiers

e-tutorial Semester I UNIT III and IV

Video Course on Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Early Effect & BJT Biasing

ES330 Laboratory Experiment No. 9 Bipolar Differential Amplifier [Reference: Sedra/Smith (Chapter 9; Section 9.2; pp )]

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

By: Dr. Ahmed ElShafee

ClassABampDesign. Do not design for an edge. Class B push pull stage. Vdd = - Vee. For Vin < Vbe (Ri + Rin2) / Rin2

ECE 3274 Common-Emitter Amplifier Project

UNIT 4 BIASING AND STABILIZATION

BJT as an Amplifier and Its Biasing

Linear IC s and applications

Analysis and Design of a Simple Operational Amplifier

ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)

EXPERIMENT 12: SIMULATION STUDY OF DIFFERENT BIASING CIRCUITS USING NPN BJT

Lecture 8. RF Amplifier Design. Johan Wernehag Electrical and Information Technology. Johan Wernehag, EIT


Communication Microelectronics (W17)

4.7 k V C 10 V I B. (b) V ma V. 3.3 k ma. (c)

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.

Transistors Used as an Amplifier

Lecture 16. MOSFET (cont d) Sunday 3/12/2017 MOSFET 1-1

Analog Electronics (Course Code: EE314) Lecture 9 10: BJT Small Signal, Biasing, Amplifiers

Chapter Two "Bipolar Transistor Circuits"

7. Bipolar Junction Transistor

Lecture (01) Transistor operating point & DC Load line

Figure1: Basic BJT construction.

Transistor Configuration

Transistor Biasing Nafees Ahamad

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS

ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER

Fundamentals of Microelectronics. Bipolar Amplifier

Module-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration

Analyzing the Dynaco Stereo 120 Power Amplifier

Analog and Telecommunication Electronics

Analog Electronics circuits

Lecture #3 BJT Transistors & DC Biasing

EEE225: Analogue and Digital Electronics

Push-Pull Amplifiers

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017

Lecture 8. Summary of Amplifier Design Methods Specific G T and F. Transistor Biasing. Lecture 8 RF Amplifier Design

Integrated Circuit: Classification:

Project (02) Dc 2 AC Inverter

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers

Current Mirrors & Current steering Circuits:

Lecture (08) Bipolar Junction Transistor (2)

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Electronic Circuits EE359A

Common-Emitter Amplifier

TRANSISTOR AS SWITCH

Transcription:

Electrical, Electronic and Digital Principles (EEDP) Lecture 3 Other BJT Biasing Techniques د. باسم ممدوح الحلوانى

Approximate Analysis Voltage-divider Bias Exact Analysis Ri = is the equivalent resistance between base and ground

Approximate Analysis Voltage-divider Bias Exact Analysis Electronic Devices and Circuit Theory 11th Ed, Boylstd

Approximate Analysis Voltage-divider Bias Exact Analysis The larger the level of Ri compared to R2, the closer is the approximate to the exact

Approximate Analysis Voltage-divider Bias Exact Analysis The larger the level of Ri compared to R2, the closer is the approximate to the exact The results reveal the difference between exact and approximate solutions. ICQ is about 3% greater with the approximate solution, VCEQ is about 1% less.

Voltage-divider Bias Load-Line Analysis From the collector emitter loop appears in Fig. The addition of the emitter resistor reduces the collector saturation level

The results show the relative insensitivity of the circuit to the change in BDC. Even though BDC is drastically cut in half, the levels of ICQ and VCEQ are essentially the same. Voltage-divider Bias BDC effect (Stability) This example is for testing how much the Q-point will move if the level of BDC is cut in half

four additional methods for dc biasing a transistor circuit are discussed. These methods are not as common as voltage-divider because of the stability The more stable a configuration, the less its response will change due to undesireable changes in temperature and parameter variations If the Q-point is highly dependent on BDC of the transistor, the configuration is not stable. BDC is temperature sensitive, especially for silicon transistors, and its actual value is usually not well-defined, 1. Base Bias 2. Emitter-Feedback Bias 3. Emitter Bias 4. Collector-Feedback Bias Common Assumptions that could be used for simplification (if needed): 8

9 1. Base Bias This method of biasing is common in switching circuits. The analysis of this circuit for the linear region shows that it is directly dependent on BDC The Kirchhoff s voltage law around the base circuit: The Kirchhoff s voltage law around the collector circuit:

1. Base Bias Since IC is dependent on BDC That a variation in BDC causes IC and, VCE to change, thus changing the Q-point of the transistor. This makes the base bias circuit extremely beta-dependent and unpredictable. BDC varies with temperature and from one transistor to another of the same type due to manufacturing variations. For these reasons, base bias is rarely used in linear circuits 1

2. Emitter-Feedback Bias If an emitter resistor is added to the base-bias, the result is emitter-feedback bias The idea is to help make base bias more predictable with negative feedback (negates any attempted change in collector current with an opposing change in base voltage). If the IC tries to increase, VE increases, causing an increase in VB because: VB = VE + VBE. This increase in VB reduces the voltage across RB, thus reducing IB and keeping IC from increasing. A similar action occurs if the collector current tries to decrease. While this is better for linear circuits than base bias, it is still dependent on BDC and is not as predictable as voltage-divider bias. 11

2. Emitter-Feedback Bias Calculating the emitter current: write Kirchhoff s voltage law (KVL) around the base circuit. The emitter current can be approximated by : IE = B IB 12

Stability Comparison between Emitter-Feedback Bias and Base Bias 131

Stability Comparison between Emitter-Feedback Bias and Base Bias As you can see, the Q-point is very dependent on in this (very unreliable). The base bias is not normally used if linear operation is required. However, it can be used in switching applications. Determine how much the Q-point will change if the same circuit is used but converted to emitter-feedback bias with RE = 1 ohms Although it significantly improved the stability of the bias for a change in BDC compared to base bias, it still does not provide a reliable Q-point. 14

2. Emitter-Feedback Bias Load Line equation: (Output loop similar to voltage-divider bias) From the collector emitter loop appears in Fig. The addition of the emitter resistor reduces the collector saturation level 15