HIGH POWER ELECTRONICS FOR ARMOR AND ARMAMENT PRESENTED BY Dave Singh U.S.ARMY RESEARCH LABORATORY WEAPONS AND MATERIALS RESEARCH DIRECTORATE AT EPRI/DARPA POST SILICON MEGAWATT REVIEW Jan. 11-13, Monterey, CA
COMBAT SYSTEM - CONCEPT E Gun
Electric Armaments Long Pole Pulse Forming Network Breech Projectile ELECTROTHERMAL CHEMICAL GUN: Mostly chemical energy Prime Power Plasma Cartridge Propellant Armature Projectile ELECTROMAGNETIC RAILGUN: Pulsed Power Supply All electric Prime Power Long Pole Conducting Rails
parasitic resistance launch coil cap. bank plate HV switch.3.2 Current (M.1..5 1. 1.5 2. 2.5 3. -.1 -.2 Time (ms) 6/5/
PULSED POWER CONDITIONING TECHNOLOGY SWTICH TECHNOLOGY STATUS Thyristor Involute Gate SG TVS THYRISTOR ` Si Si C Peak Current-kA 3 (1) 125 (5) 15 (3) 5 Peak Voltage-kV >1 1 6 (1) 25 Action-MA 2.S 5 (5) 1 (5) 22 (36) 1 Voltage Drop-V 5(2) 1 (4) <2 <3 SG - Spark Gap TVS - Triggered Vacume Switch
125 mm THYRISTOR CHARACTERIZATION INVOLUTED GATE Weapons & Materials Research Directorate Power (MW) 1 2. 8 124 ka at 85 µs 1.5 6 1. 4 2.5. -2 5 1 15 2 25 3 -.5-4 Power -6 Current -1. -8 Voltage -1.5 Voltage (kv) -1 Time (ms) -2. C. H. & H. S. 8/18/98
125 mm THYRISTOR CHARACTERIZATION INVOLUTED GATE Weapons & Materials Research Directorate Power (MW) 7 6 5 4 3 2 1 Power Current Voltage 1..9.8.7.6.5.4.3.2.1 Voltage (kv). 1 2 3 4 5 Time (ms) C.H & H.S 8/18/98
125 mm THYRISTOR CURRENT Weapons & Materials Research Directorate V anode = 3.5 kv Current ( ka ) 16 14 12 1 8 6 4 2-2 5 1 15 2 25 Time ( m S )
125 mm THYRISTOR CURRENT AND VOLTAGE Weapons & Materials Research Directorate V anode = 3.5 kv Current ( ka ) 1 9 8 7 6 5 4 3 2 1 3.5 Current 3. Voltage 2.5-5 5 1 15 2 25 3 Time ( m S ) Voltage ( kv ) 2. 1.5 1..5.
Pulse Power Thyristors Features* Longer Gate Line Higher Lifetime No Emitter Shorts High Interdigitation* 125mm 5kV Involute Results* Higher di/dt Lower Forward Drop Faster Plasma Spread Projected Rating > 15kA/µs, > 2 ka Tested To: > 3.3kA/µs, 175 ka peak
PEBB AC-MODULE TEST SCHEMATIC Weapons & Materials Research Directorate EXTERNAL DIODE 4 mf INTERNAL DIODE H. V. PROBES
Weapons & Materials Research Directorate PEBB AC-MODULE CURRENT Current ( ka ) 6 5 4 3 2 1 985 V 738 V 59 V 27 V 11 V -1-2 5 1 15 2 25 3 Time ( m S )
Weapons & Materials Research Directorate PEBB AC-MODULE CURRENT 14 12 V charge = 1.12 kv 8 A 2 S Current ( ka ) 1 8 6 4 2-2 -4 5 1 15 2 25 Time ( m S ) 32 A 2 S
PEBB AC-MODULE VOLTAGE DROP Weapons & Materials Research Directorate.1 V charge = 1.12 kv. -.1 Voltage ( kv ) -.2 -.3 -.4 -.5 -.6 Peak Current 5.5 ka 7.4 ka 8.5 ka 1.3 ka 13.5 ka -.7 5 1 15 2 25 Time ( m S )
High-Rep Rate Trigger Generator Using PEBB Burst Storage Capacitor Supplies energy to recharge spiker and sustainer. Eliminate high power supply for limited burst operation. Spiker Circuit Generates high-voltage pulse to breakdown the vacuum switch plasma gun. Supplies 6 kv, 1 ns risetime voltage pulse Sustainer Circuit Delivers sustained high-current pulse to drive trigger plasma to close the vacuum switch. Generates 1 ka with a 8 microsecond FWHM pulse. 2 mh Burst Storage Capacitor Charge Thyristor 3.5 mf @ 42 V Charging Diode 1 Ω 2µF Charging Diode RC Snubber MCT Spiker Circuit 1:7 Pulse Transformer 2 nh 2 nh 2 nh 2 nh 2µF 2µF 2µF 2µF MCT Blocking Diode.278 Ω Plasma Gun Load RC Snubber Sustainer Circuit
Burst Performance at 5 pps Trigger Current (Amperes) 12 1 8 6 4 2 Ten shot burst at 5 pps Ten shot burst at 5 pps. (Note time axis is discontinuous between current pulses.) -2-5 5 1 Detail of the fourth voltage pulse in the 1 shot burst. The trigger pin breaks down at 2 kv. 12 3 1 25 8 Trigger Current (Amperes) 6 4 2 Trigger Voltage (Volts) 2 15 1 5-2 5 1 x1-6 15 2 5 1 x1-6 15 2 Detail of fourth current pulse in the 1 shot burst showing >1 ka current and 8 µs pulse width.
Benefits and Future Directions Future Directions Further reduce volume by utilizing MCT current interruption capability to eliminating PFN portion of the sustainer circuit Plasma Gun Spiker Circuit Load 2 mh Charge Thyristor 3.5 mf @ 42 V Burst Storage Capacitor Charging Diode 1 Ω 2µF MCT RC Snubber MCT 1:7 Pulse Transformer 1.4 Ω 1.4 Ω Blocking Diode Sustainer Circuit Benefits of using MCTs in repetitive trigger generators High repetition capability. Fast turn-on di/dt. High peak current capability. Current interruption capability. Compact, light-weight, highvoltage triggering capability for electric weapon systems. MCT 1.4 Ω MCT 1.4 Ω MCT
SWITCH REQUIREMENTS LIFE TIME > 1 Bursts RELIABILITY Graceful Degradation POWER DENSITY > 2Mw/m 3 IDEAL SWITCH MODULARITY Series/ Parallel DI/DT > 1ka/ms INTELLIGENCE Diagonostics/ Self Prot. CONTROL mp/laser HIGH TEMP. OPERATION > 3 C Reduce Thermal Management - 6 Fold BATTLE FIELD HARDENED
SUMMARY High Power Electronics is Enabling Technology for Future Combat Platforms, which are envisioned to be compact and light; yet must be more MOBILE,LETHAL and SURVIVABLE. Silicon based Switch development is necessary to aid accelerated development of future systems and novel material Switches. ARL-WMRD has mission to develop technologies to enhance LETHALITY AND SURVIVABILITY of FUTURE COMBAT PLATFORMS.