Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mω (typ., TJ=150 C), in an HiP247 package HiP247 Figure 1: Internal schematic diagram 1 2 3 Features Datasheet - preliminary data Designed for automotive applications Tight variation of on-resistance vs. temperature Very fast and robust intrinsic body diode Very high operating temperature capability (TJ = 200 C) Low capacitance Applications Table 1: Device summary Traction for inverters DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST s advanced and innovative 2 nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature. Order code Marking Package Packaging SCTW100N65G2AG SCT100N65G2AG HiP247 Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as halogen-free. See Section 5: "Package information". May 2016 DocID029319 Rev 1 1/9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.st.com
Contents SCTW100N65G2AG Contents 1 Electrical ratings... 3 2 Electrical characteristics... 4 3 Package information... 6 3.1 HiP247 package information... 6 4 Revision history... 8 2/9 DocID029319 Rev 1
Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 650 V VGS ID Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 20 Drain current (continuous) at TC = 25 C 100 Drain current (continuous) at TC = 100 C 85 IDM (1) Drain current (pulsed) 200 A PTOT Total dissipation at TC = 25 C 390 W Storage temperature range C -55 to 200 Tj Operating junction temperature range C Tstg Notes: (1) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.45 C/W Rthj-amb Thermal resistance junction-ambient max 50 C/W V A DocID029319 Rev 1 3/9
Electrical characteristics SCTW100N65G2AG 2 Electrical characteristics (TCASE = 25 C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS IDSS IGSS Drain-source breakdown VGS = 0 V, ID = 1 ma 650 V voltage Zero gate voltage drain current Gate-body leakage current VDS = 650 V, VGS = 0 V 50 VDS = 650 V, VGS = 0 V, TJ = 150 C (1) VDS = 0 V, VGS = -10 to 22 V 100 µa 500 na VGS(th) Gate threshold voltage VDS = VGS, ID = 1 ma 1.9 3.2 V VGS = 20 V, ID = 50 A 20 RDS(on) Static drain-source on-resistance VGS = 20 V, ID = 50 A, TJ = 150 C VGS = 20 V, ID = 50 A, TJ = 200 C 22 mω 23 Notes: (1) Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 3600 - pf VDS = 400 V, f = 1 MHz, Coss Output capacitance - 305 - pf VGS = 0 V Crss Reverse transfer capacitance - 78 - pf Qg Total gate charge - 215 - nc VDD = 400 V, ID = 50 A, Qgs Gate-source charge - 32 - nc VGS = 0 to 20 V Qgd Gate-drain charge - 60 - nc Rg Gate input resistance f=1 MHz, ID = 0 A - 1.5 - Ω Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon Turn-on switching energy VDD = 400 V, ID = 50 A - 300 - µj Eoff Turn-off switching energy RG= 2.2 Ω, VGS = -5 to 20 V - 250 - µj 4/9 DocID029319 Rev 1
Electrical characteristics Table 7: Reverse diode characteristics Symbol Parameter Test conditions Min Typ. Max Unit VSD Diode forward voltage IF = 30 A, VGS = 0 V - 3.5 - V trr Reverse recovery time - 28 ns ISD = 50 A, di/dt = 4000 A/µs Qrr Reverse recovery charge - 795 - nc VDD = 400 V, VGS = -5 V IRRM Reverse recovery current - 44 - A DocID029319 Rev 1 5/9
Package information SCTW100N65G2AG 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 2: HiP247 package outline 6/9 DocID029319 Rev 1
Package information Table 8: HiP247 package mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 DocID029319 Rev 1 7/9
Revision history SCTW100N65G2AG 4 Revision history Table 9: Document revision history Date Revision Changes 09-May-2016 1 First release 8/9 DocID029319 Rev 1
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